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1N5817 Datasheet

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1N5817 N/A Shortform IC and Component Datasheets (Plus Cross Reference Data)
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1 pages,
73.23 Kb

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1N5817 N/A Semiconductor Devices, Diode, and SCR Datasheet Catalog
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1 pages,
59.57 Kb

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1N5817 N/A Shortform Data and Cross References (Misc Datasheets)
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1 pages,
34.89 Kb

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1N5817 BeiJing FeiDa Electronics 1.0 A Schottky Barrier Diode
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2 pages,
268.61 Kb

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1N5817 Bytes 1.0 AMP SCHOTTKY BARRIER RECTIFIERS
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2 pages,
150.44 Kb

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1N5817 Capar Schottky Barrier Rectifiers
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1 pages,
82.08 Kb

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1N5817 CEIEC Rectifier Diode, Schottky Diode, Single, 20V, DO-41, 2-Pin
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2 pages,
37.22 Kb

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1N5817 Central Semiconductor Diode Schottky Diode 20V 1A 2 pin DO-41
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1 pages,
53.58 Kb

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1N5817 Codi Semiconductor 1A Schottky Barrier Rectifier
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2 pages,
100.58 Kb

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1N5817 Comchip Technology 1N5817
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2 pages,
28.18 Kb

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1N5817

Catalog Datasheet MFG & Type PDF Document Tags
Abstract: stS/KM Pf(av) (W) 1.5 2 IF(AV) W Fig.4 1N5817. Maximum values steady state forward power , N AMER PHILIPS/DISCRETE b«=JE > m bhS3m DD2bTBM T37 ■ APX 1N5817/1N5818/1N5819 Schottky , PARAMETER TYPE MAX. UNIT Vrrm repetitive peak reverse voltage 1N5817 20 V 1N5818 1N5818 30 V 1N5819 1N5819 40 V vrwm crest working reverse voltage 1N5817 20 V 1N5818 1N5818 30 V 1N5819 1N5819 40 V Vr continuous reverse voltage 1N5817 20 V 1N5818 1N5818 30 V 1N5819 1N5819 40 V vrsm non-repetitive peak reverse voltage 1N5817 24 V ... OCR Scan
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9 pages,
197.22 Kb

PHILIPS 1N N5818 1N5817 Philips 1.1N5819 1N5818 1n5819 philips N5819 1N5819 1N5817 1N5817/1N5818/1N5819 TEXT
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Abstract: 2 > F(AV) (A ) Fig.4 1N5817. Maximum values steady state forward power dissipation as a , 969 V V V 20 30 40 20 30 40 V V V 24 36 48 1 1 1 V V V 1N5817 1N5818 1N5818 1N5819 1N5819 1N5817 1N5818 1N5818 1N5819 1N5819 n o n - r e p e titiv e p e a k re v e rs e v o lta g e 20 30 40 1N5817 1N5818 1N5818 1N5819 1N5819 c o n tin u o u s r e v e rs e v o lta g e MAX. 1N5817 1N5818 1N5818 1N5819 1N5819 1N5817 1N5818 1N5818 1N5819 1N5819 1N5817 1N5818 1N5818 1N5819 1N5819 c r e s t w o r k in g re v e rs e v o ... OCR Scan
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9 pages,
249.16 Kb

TEXT
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Abstract: 1N5817 thru 1N5819 1N5819 Taiwan Semiconductor CREAT BY ART Schottky Barrier Rectifier FEATURES - , 1N5817 1N5818 1N5818 1N5819 1N5819 Unit Maximum repetitive peak reverse voltage VRRM 20 30 40 , Version:F13 1N5817 thru 1N5819 1N5819 Taiwan Semiconductor ORDERING INFORMATION PART NO. PACKING CODE , -41 DO-41 DO-41 1000 / Bulk packing R0 Suffix "G" Note 1: "x" defines voltage from 20V (1N5817) to 40V (1N5819 1N5819) EXAMPLE PREFERRED P/N PART NO. 1N5817 A0 1N5817 A0 1N5817 A0G ... Taiwan Semiconductor
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3 pages,
189.03 Kb

1N5817 1N5819 TEXT
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Abstract: ; 1N5818 1N5818; 1N5819 1N5819 MBG434 MBG434 MBG435 MBG435 Fig.6 1N5817. Maximum permissible junction Fig.7 1N5817. Reverse power , Philips Semiconductors Product specification Schottky barrier diodes 1N5817; 1N5818 1N5818; 1N5819 1N5819 , • Polarity protection. DESCRIPTION The 1N5817 to 1N5819 1N5819 types are Schottky barrier diodes , Manufacturer Philips Semiconductors Product specification Schottky barrier diodes 1N5817; 1N5818 1N5818; 1N5819 1N5819 , CONDITIONS MIN. MAX. UNIT Vr continuous reverse voltage 1N5817 - 20 V 1N5818 1N5818 - 30 V 1N5819 1N5819 - 40 ... OCR Scan
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8 pages,
207.26 Kb

DIODE 1N5819 dc data sheet for 1N5817 1N5819 package 1N5818 1N5817 Philips 1n5819 data sheet 1N5819 1N5817 TEXT
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Abstract: 1N5817. Maximum permissible junction temperature as a function of reverse voltage; Rth j-a = 100 K/W. Fig.7 MBG432 MBG432 200 10 1N5817. Reverse power dissipation as a function of reverse voltage , DISCRETE SEMICONDUCTORS DATA SHEET handbook, halfpage M3D119 M3D119 1N5817; 1N5818 1N5818; 1N5819 1N5819 , diodes 1N5817; 1N5818 1N5818; 1N5819 1N5819 FEATURES DESCRIPTION · Low switching losses The 1N5817 to , Philips Semiconductors Product specification Schottky barrier diodes 1N5817; 1N5818 1N5818; 1N5819 1N5819 ... Philips Semiconductors
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9 pages,
69.36 Kb

datasheets diode 1n5818 1N5817 Philips 1N5819* diode 1n5819 data sheet 1N5819 package datasheets diode 1n5819 1N5817 schottky diode symbol 1N5818 diode 1N5819 1N5817 1N5819 1N817 TEXT
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Abstract: 1N5817. Maximum permissible junction temperature as a function of reverse voltage; Rth j-a = 100 K/W. Fig.7 MBG432 MBG432 200 10 1N5817. Reverse power dissipation as a function of reverse voltage , DISCRETE SEMICONDUCTORS DATA SHEET fpage M3D119 M3D119 1N5817; 1N5818 1N5818; 1N5819 1N5819 Schottky , 1N5817; 1N5818 1N5818; 1N5819 1N5819 FEATURES DESCRIPTION · Low switching losses The 1N5817 to 1N5819 1N5819 types , Philips Semiconductors Product specification Schottky barrier diodes 1N5817; 1N5818 1N5818; 1N5819 1N5819 ... Original
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9 pages,
58.96 Kb

Philips applications 1N5817 Philips 1n5819 philips MBG432 MBG435 1N5819 Diodes 1N5818 datasheets diode 1n5818 1N5817 1N817 1N5819 TEXT
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Abstract: 1N5817. Maximum permissible junction temperature as a function of reverse voltage; Rth j-a = 100 K/W. Fig.7 MBG432 MBG432 200 10 1N5817. Reverse power dissipation as a function of reverse voltage , DISCRETE SEMICONDUCTORS DATA SHEET fpage M3D119 M3D119 1N5817; 1N5818 1N5818; 1N5819 1N5819 Schottky , Semiconductors Product specification Schottky barrier diodes 1N5817; 1N5818 1N5818; 1N5819 1N5819 FEATURES DESCRIPTION · Low switching losses The 1N5817 to 1N5819 1N5819 types are Schottky barrier diodes fabricated in ... Philips Semiconductors
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9 pages,
40.5 Kb

1N817 1N5817 Philips datasheets diode 1n5818 1N5818 1N5817 1N5819 TEXT
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Abstract: Quantity 1N5817-T3 DO-41 DO-41 5000/Tape & Reel 1N5817-TB DO-41 DO-41 5000/Tape & Box 1N5817 DO , ), add “-LF” suffix to part number above. For example, 1N5817-TB-LF. Won-Top Electronics Co., Ltd , 1N5817 – 1N5819 1N5819 WTE POWER SEMICONDUCTORS Pb 1.0A SCHOTTKY BARRIER DIODE Features #21; , Reverse Voltage DC Blocking Voltage 1N5817 0.450 0.750 0.550 0.875 0.60 0.90 V Note , . 2. Measured at 1.0 MHz and applied reverse voltage of 4.0V D.C. 1N5817 – 1N5819 1N5819 1 of 4  ... Won-Top Electronics
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4 pages,
46.54 Kb

1N5817 1N5819 TEXT
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Abstract: 1N5817 thru 1N5819 1N5819 Taiwan Semiconductor CREAT BY ART Schottky Barrier Rectifier FEATURES - , CHARACTERISTICS (TA=25℃ unless otherwise noted) PARAMETER SYMBOL 1N5817 1N5818 1N5818 1N5819 1N5819 Unit , Reverse Voltage of 4.0 V D.C. Document Number: D1307014 D1307014 Version: F13 1N5817 thru 1N5819 1N5819 Taiwan , Suffix "G" Note 1: "x" defines voltage from 20V (1N5817) to 40V (1N5819 1N5819) EXAMPLE PREFERRED P/N PART NO. 1N5817 A0 1N5817 A0 1N5817 A0G 1N5817 GREEN COMPOUND PACKING CODE A0 ... Taiwan Semiconductor
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4 pages,
190.85 Kb

1N5817 1N5819 TEXT
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Abstract: -1N8517TR -1N8517TR VS-1N5817-M3 VS-1N5817TR-M3 QUANTITY PER T/R 1000 5000 1000 5000 MINIMUM ORDER QUANTITY 1000 5000 , VS-1N5817, VS-1N5817-M3 www.vishay.com Vishay Semiconductors Schottky Rectifier, 1.0 A , definition (-M3 only) DESCRIPTION The VS-1N5817. axial leaded Schottky rectifier has been optimized for , reverse voltage Maximum working peak reverse voltage SYMBOL VR VRWM VS-1N5817 20 VS-1N5817-M3 20 UNITS V , ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-1N5817, VS-1N5817 ... Vishay Semiconductors
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datasheet

6 pages,
111.51 Kb

VISHAY 1N5817 1N85 VS-1N5817 VS-1N5817-M3 TEXT
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Abstract: 1N5817, 1N5818 1N5818, 1N5819 1N5819 1N5817 and 1N5819 1N5819 are Preferred Devices Axial Lead Rectifiers . . . , Polarity Band Marking: 1N5817, 1N5818 1N5818, 1N5819 1N5819 SCHOTTKY BARRIER RECTIFIERS 1.0 AMPERE 20, 30 and 40 VOLTS , MARKING DIAGRAM 1N 581x 1N581x = Device Code x = 7, 8 or 9 ORDERING INFORMATION Device 1N5817 , . © Semiconductor Components Industries, LLC, 2003 36 April, 2003 - Rev. 6 Publication Order Number: 1N5817/D 1N5817, 1N5818 1N5818, 1N5819 1N5819 MAXIMUM RATINGS Rating Peak Repetitive Reverse Voltage Working Peak ... ON Semiconductor
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datasheet

6 pages,
81.44 Kb

1n5819 equivalent 1N5817 1N5818 1N5819 TEXT
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Abstract: 1N5817, 1N5818 1N5818, 1N5819 1N5819 1N5817 and 1N5819 1N5819 are Preferred Devices Axial Lead Rectifiers This , Order Number: 1N5817/D 1N5817, 1N5818 1N5818, 1N5819 1N5819 MAXIMUM RATINGS Rating Peak Repetitive Reverse , ) 85 1N5817 20 1N5818 1N5818 30 1N5819 1N5819 40 Unit V 24 14 36 21 1.0 80 25 (for one cycle) -65 to +125 150 , (Note 2) (iF = 0.1 A) (iF = 1.0 A) (iF = 3.0 A) Symbol vF 1N5817 0.32 0.45 0.75 1.0 10 1N5818 1N5818 0.33 0.55 , 1N5817 1N5817RL 1N5817RL 1N5818 1N5818 1N5818RL 1N5818RL 1N5819 1N5819 1N5819RL 1N5819RL Package Axial Lead Axial Lead Axial Lead Axial Lead Axial ... ON Semiconductor
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datasheet

8 pages,
72.19 Kb

1N5817 1N5818 1N5819 TEXT
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Abstract: 1N5817, 1N5818 1N5818, 1N5819 1N5819 1N5817 and 1N5819 1N5819 are Preferred Devices Axial Lead Rectifiers . . . , Polarity Band Marking: 1N5817, 1N5818 1N5818, 1N5819 1N5819 SCHOTTKY BARRIER RECTIFIERS 1.0 AMPERE 20, 30 and 40 VOLTS , MARKING DIAGRAM 1N581x 1N581x = Device Code x = 7, 8 or 9 ORDERING INFORMATION Device 1N5817 1N5817RL 1N5817RL , Components Industries, LLC, 2002 203 April, 2002 - Rev. 5 Publication Order Number: 1N5817/D 1N5817, 1N5818 1N5818, 1N5819 1N5819 MAXIMUM RATINGS Rating Peak Repetitive Reverse Voltage Working Peak Reverse ... ON Semiconductor
Original
datasheet

6 pages,
91.41 Kb

1n5819 equivalent 1N5817 1N5818 1N5819 TEXT
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Abstract: Schottky Barrier Rectifier 1N5817 THRU 1N5819 1N5819 List Formosa MS List , 1N5817 THRU 1N5819 1N5819 1.0A Leaded Type Schottky Barrier Rectifiers - 20V-40V Features · Axial lead type , resistance Diode junction capacitance Storage temperature mA O C/W pF O C SYMBOLS 1N5817 1N5818 1N5818 , Page. 6 Page 2 DS-222644 DS-222644 Rating and characteristic curves (1N5817 THRU 1N5819 1N5819) FIG , Load 0.375"(9.5mm) Lead Length 10 1N5817 3.0 1N5818 1N5818 1N5819 1N5819 1.0 TJ=25 C Pulse Width 300us 1 ... Formosa MS
Original
datasheet

6 pages,
141.07 Kb

1N5817 1N5819 TEXT
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Archived Files

Abstract Saved from Date Saved File Size Type Download
ST | LOW DROP POWER SCHOTTKY RECTIFIER 1N5817 BENEFITS Symbol Parameter Value Unit 1N5817 1N5818 1N5818 1N5819 1N5819 V RRM Repetitive peak reverse voltage 20 30 40 V for a diode on its own heatsink 1/5 Symbol Parameter Tests Conditions 1N5817 1N5818 1N5818 1N5819 1N5819 Unit I R equations : P = 0.3 x I F(AV) + 0.090 I F 2 (RMS ) for 1N5817 / 1N5818 1N5818 P = 0.3 x I F(AV) + 0.150 I F 2 (RMS versus average forward current (1N5817/1N5818). 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 0.0
/datasheets/files/stmicroelectronics/stonline/books/ascii/docs/6262-v1.htm
STMicroelectronics 02/04/1999 6.89 Kb HTM 6262-v1.htm
ST | LOW DROP POWER SCHOTTKY RECTIFIER 1N5817 BENEFITS Symbol Parameter Value Unit 1N5817 1N5818 1N5818 1N5819 1N5819 V RRM Repetitive peak reverse voltage 20 30 40 V for a diode on its own heatsink 1/5 Symbol Parameter Tests Conditions 1N5817 1N5818 1N5818 1N5819 1N5819 Unit I R equations : P = 0.3 x I F(AV) + 0.090 I F 2 (RMS ) for 1N5817 / 1N5818 1N5818 P = 0.3 x I F(AV) + 0.150 I F 2 (RMS versus average forward current (1N5817/1N5818). 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 0.0
/datasheets/files/stmicroelectronics/stonline/books/ascii/docs/6262-v2.htm
STMicroelectronics 14/06/1999 6.85 Kb HTM 6262-v2.htm
Datasheet LOW DROP POWER SCHOTTKY RECTIFIER 1N5817 1N5818 1N5818 1N5819 1N5819 Value Unit 1N5817 1N5818 1N5818 1N5819 1N5819 V RRM Repetitive peak reverse voltage 20 30 40 V I F(RMS) RMS Conditions 1N5817 1N5818 1N5818 1N5819 1N5819 Unit I R * Reverse leakage current Tj = 25 5 C V R = V RRM 1 1 1 (RMS ) for 1N5817 / 1N5818 1N5818 P = 0.3 x I F(AV) + 0.150 I F 2 (RMS ) for 1N5819 1N5819 STATIC dissipation versus average forward current (1N5817/1N5818). 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1
/datasheets/files/stmicroelectronics/stonline/books/ascii/docs/6262-v3.htm
STMicroelectronics 25/05/2000 8.61 Kb HTM 6262-v3.htm
Datasheet LOW DROP POWER SCHOTTKY RECTIFIER 1N5817 1N5818 1N5818 1N5819 1N5819 SWITCHING LOW FORWARD VOLTAGE DROP FEATURES AND BENEFITS Symbol Parameter Value Unit 1N5817 1N5818 1N5818 1N5819 1N5819 V Tests Conditions 1N5817 1N5818 1N5818 1N5819 1N5819 Unit I R * Reverse leakage current Tj = 25 5 C V R = V RRM 1 1 1 m losses use the following equations : P = 0.3 x I F(AV) + 0.090 I F 2 (RMS ) for 1N5817 / 1N5818 1N5818 P = 0.3 : Average forward power dissipation versus average forward current (1N5817/1N5818). 0.0 0.1 0.2 0.3 0.4 0.5
/datasheets/files/stmicroelectronics/stonline/books/ascii/docs/6262.htm
STMicroelectronics 20/10/2000 9.1 Kb HTM 6262.htm
1N5817_1 1N5817; 1N5818 1N5818; 1N5819 1N5819     Schottky barrier diodes The 1N5817 to 1N5819 1N5819 types are Schottky barrier diodes fabricated in planar technology, and ) 1N5817 450 450 25 25 80.0@typ. 80.0@typ. 1000 20 1000 1000 20 20 Medium power Status 1N5817 1N5817 T/R 9340 011 90113 Standard Marking * Reel Pack, Axial, Standard SOD81
/datasheets/files/philips/pip/1n5817_1-v1.html
Philips 14/02/2002 17.58 Kb HTML 1n5817_1-v1.html
1N5817_1 Product information page 1N5817; 1N5818 1N5818; 1N5819 1N5819; Schottky barrier diodes General info The 1N5817 to 1N5819 1N5819 types are Schottky barrier diodes ) Package V F max(mV) V R max(V) V RRM max(V) 1N5817 80@VR=4V typ Medium power Schottky Publication releasedate Datsheet status Page count File size 1N5817; 1N5818 1N5818; 1N5819 1N5819 Schottky Status 1N5817 1N5817 T/R 9340 011 90113 Standard Marking * Reel Pack, Axial, Standard SOD81
/datasheets/files/philips/pip/1n5817_1.html
Philips 23/04/2003 5.05 Kb HTML 1n5817_1.html
* ; 20.0V 1.00A 3.00us Diodes Inc. Schottky Barrier Rectifier .MODEL DI_1N5817 D ( IS=870u RS=81.3m BV=20.0 IBV=1.00m + CJO=203p M=0.333 N=1.81 TT=4.32u )
/datasheets/files/diodes-inc/spice-model/4227.mod
Diodes, Inc. 04/09/2012 0.19 Kb MOD 4227.mod
* * Model Generated by MODPEX * *Copyright(c) Symmetry Design Systems* * All Rights Reserved * * UNPUBLISHED LICENSED SOFTWARE * * Contains Proprietary Information * * Which is The Property of * * SYMMETRY OR ITS LICENSORS * *Commercial Use or Resale Restricted * * by Symmetry License Agreement * * * Model generated on Aug 21, 00 * MODEL FORMAT: SPICE3 .MODEL 1n5817 d +IS=2.93092e-05 RS=0.0524736
/datasheets/files/on-semiconductor/models/1n5817.sp3
On Semiconductor 20/06/2002 0.64 Kb SP3 1n5817.sp3
  Search Criteria:   Package = DO-41 DO-41, PartType = Schottky Rectifier PartNo Data Sheet Pack I O (A) V R (V) I FSM (A) V F (V) I R (uA) 1N5817   DO-41 DO-41 STD 1 20 50 0.32 1000 1N5817   DO-41 DO-41 STD 1 20 25 0.45 1000 1N5818 1N5818   DO-41 DO-41 STD 1 30
/datasheets/files/microsemi/products/sch/do-41-v1.htm
Microsemi 07/12/1999 30.71 Kb HTM do-41-v1.htm
MCC SCH DO-214AA DO-214AA SM 1 20 0.45 1000 25 1N5817 MCC POWERMITE SM 1 20 0.45 1000 50 1N5817 CO SCH DO-41 DO-41 STD 1 20 0.45 1000 50 1N5817G CO SCH DO-41G DO-41G STD 1
/datasheets/files/microsemi/products/sch/19_0.45.htm
Microsemi 04/01/1999 8.56 Kb HTM 19_0.45.htm

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1N5817T/R Philips Semiconductors / NXP Semiconductors General Purpose Schottky Rectifier

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1N5817 Buy SB120 Buy Exact mechanical, slight electrical difference. Leaded Rectifier Schottky
1N5817 Buy SR102 Buy Exact mechanical, slight electrical difference. Leaded Rectifier Schottky

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