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Part Manufacturer Description PDF & SAMPLES
1N5402G-T Diodes Incorporated Rectifier Diode, 1 Phase, 1 Element, 3A, 200V V(RRM), Silicon, DO-201AD, ROHS COMPLIANT, PLASTIC PACKAGE-2
1N5406-B Diodes Incorporated Rectifier Diode, 1 Phase, 1 Element, 3A, 600V V(RRM), Silicon, DO-201AD, ROHS COMPLIANT, PLASTIC PACKAGE-2
1N5407-T Diodes Incorporated Rectifier Diode, 1 Phase, 1 Element, 3A, 800V V(RRM), Silicon, DO-201AD, ROHS COMPLIANT, PLASTIC PACKAGE-2
1N5401RLG ON Semiconductor Standard Recovery Rectifier, 100 V, 3.0 A, Axial Lead 9.65x5.33mm, 25.4x1.22mm Pkg, Lead len/dia, 1200-REEL
1N5406G ON Semiconductor Standard Recovery Rectifier, 600 V, 3.0 A, Axial Lead 9.65x5.33mm, 25.4x1.22mm Pkg, Lead len/dia, 500-BLKBX
1N5408RLG ON Semiconductor Standard Recovery Rectifier, 1000 V, 3.0 A, Axial Lead 9.65x5.33mm, 25.4x1.22mm Pkg, Lead len/dia, 1200-REEL

1N540 dc

Catalog Datasheet MFG & Type PDF Document Tags
Abstract: capacitive load, derate current by 20%. SYMBOL 1N5400 1N5401 1N540 1N5404 1N5406 1N540 1N5408 units G G , 560 800 1000 700 1000 Maximum Recurrent Peak Reverse Voltage Maximum RMS Voltage Maximum DC , Voltage at 3.0A DC Maximum DC Reverse Current at Rated DC Blocking Voltage @ TA=25°C @ TA Chongqing Pingyang Electronics
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1N5400G 1N5408G 202E VOLTAGE50-1000V DO-27 UL94V-0
Abstract: 47 ^TaeïuX Electronic Valves Z & I Aero Services Ltd London England 1972-73 Semi Conductors Silicon Junction Mains Power Rectifiers Notes H.W. - Half Wave W/E â'" Wire Ended S.M. â'" Stud Mounted F.W.B. - Full Wave Bridge * â'" Avalanche Type P. I.V. IF DC 1 surge Amps Notes Price £ Type P.I.V. IF DC surge Amps Notes Price £ 1N91 100 150 m A 25 H.W.W/E 0.45 BYX42-900 900 10 A 125 H.W.; S.M. 0.55 1N540 400 750 mA 15 H.W.; W/E 0.30 BYX42-900R as BYX42-900 but with stud anode 0.55 -
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BYZ10 BYZ12 BYZ13 BYZ19 D226B D226V KD202A BY100 KD202B KD202D KD202G 1N645 BYX42-1200 1N649 BYX42-1200R 1N2071
Abstract: â  Regulated DC output voltage with zero load â  Adjustable output DC voltage target , designed to offer high performance in terms of PF, THD and DC output voltage ripple. For less demanding , 5v 15v 15 900u 10Apk 900uH-10 1N540 5406 D3 D9 1N400 4001 R17 6.8k 1 3 5 STMicroelectronics
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1N400 diode STEVAL-ISF002V1 STW23NM60N TD352
Abstract: limitation Software overvoltage protection Software voltage limitation Regulated DC output voltage with zero load Adjustable output DC voltage target value Embedded UI for , complex operations. The system is designed to offer high performance in terms of PF, THD and DC output , 900uH-10 1N540 5406 D3 D9 1N400 4001 MC_connector_PFC_2 onnect Emergen Stop gency STMicroelectronics
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diode 1n400 MOSFET 1 KW VIPer12A applications 23NM60 PER12 DIODE 1N400 3A 12A-E
Abstract: altitude mA dc a V dc mA dc ma °C mm Hg 220 15 5 25 250 -65 to +150 , VAC = 5 V Re > 1 kâ"¦ V Min Max Vf if = 2A mA dc V dc ÂuA dc -2.5 0.3 5.0 , : IFBX . DC forward blocking current with resistor R2 across gate and cathode. IRBX . DC reverse , supply voltage (dc). VFBX . Forward anode voltage. VCG . Reverse gate voltage. VG Rated reverse , 2N1872A 2N1874A 4206 DC method, bias condition B; R2 = 1,000 ohms, .25 watt VFBX = 30 VFBX = 60 Microsemi
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MIL-PRF-19500/198C MIL-PRF-19500/198B 2N1870A 2N1871A MIL-PRF-19500
Abstract: iG Operating and storage temperature Operating altitude mA dc a V dc mA dc ma , Limits mA dc V dc A dc 2.5 0.3 5.0 0.4 0.8 200 Min Max 2. APPLICABLE , as follows: IFBX IRBX iG VAA VCG VFBX VG DC forward blocking current with resistor R2 across gate and cathode. DC reverse blocking current with resistor R2 across gate and cathode. Peak gate current. Anode power supply voltage (dc). Reverse gate voltage. Forward anode voltage. Rated -
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transformer step up D 4206 TRANSISTOR step down transformer 2N1874A JAN 1N457 MIL-PRF-19500/198E MIL-PRF-19500/198D
Abstract: current having an rms value equal to 10% of the DC zener current (l;t) is superimposed on /.-/. SEE PAGE , Half Operating Number PIV Half Wave One Cycle Average at Volts (dc) Wave Rect. Temp. Rectified Surge Continuous Max. Ratings mA (Resist. Ld.) w! Amps Amps Volts (dc) Volts , - â  Â« A »» 1 , Wave Rect. Maximum Type Rectified Surge Continuous Max. Ratings Volts (dc) (Resist. Ld.) Operating Number CT PIV Amps i -
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MOTOROLA POWER TRANSISTOR TO36 package 2N554 Motorola germanium transistor pnp 2N1545 2N174 MIL-S-19500B/124 1N2970B 1N2985B 1N3001B 1N2971B 1N2986B
Abstract: ­ ington, D.C. and 1901 N. Moore St., Arlington, VA 22209 . Baltimore, Md. Virginia , . H o u s to n . .M etropolitan Wash­ ington, D.C. and Baltim ore, Md. Virginia , 1N537 1N538 1N539 1N540 1N547 1N1095 1N1183A 1N1184A 1N1186A 1N1187A 1N1188A 1N1189A 1N1190A -
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scr 40428 2N5442 equivalent RCA-2N5470 RCA transistor 40312 rca 40361 transistor RCA 40251 2N1491 2N1493 2N2631 2N2876 2N3229 2N3632
Abstract: 1N537 1N538 1N539 1N540 1N547 IOC IOC 20C 20C 30C 30C 40C 40C 50C 50C 60C 60C 30C , P DC 44 O utput VDC O u tp u t VDC 20H 3P 30H 3P 40H 3P 50H 3P 60H 3P 80H 3P 30 60 , AM P D C 44 CENTER TAP 2 X AM P D C 44 BRIDGE 2 X AM P DC O u tp u t VDC M AX4 RMS , T2030P S T2040P ST2050P ST2060P 1 1 70 140 210 280 350 420 HALFWAVE 1 X AM P DC CENTER TAP 2 X AM P DC BRIDGE 2 X AM P DC O u tp u t VDC i P.I.V . O u tp u t VDC -
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10T12RA 3AF1 N959A VC960 1N248 1N248A 1N248B 1N248C 1N249 1N249A
Abstract: D E P A H T M 1N T REGULATOR FC p 723 HC, AM PE X 586-321 723 DC 586-449 +12V +12V (UNREG. INPUT , NULL FC n 747 DC DUAL O PERATIO NAL A M P L IF IE R 14 LEAD DIP 3 5 8 14 11 25 w OFFSET NU LL A , PC 586-308 D T L HEX INVERTER SEE MC 837 - P 945 PC 586-187 SEE MC 845 P 946 DC 586-307 D T L , inal No. 10 to most positive dc supply voltage used for circuit. 87 27-20 CA 0005 CA 0000 580-254 AMPEX RF AM PLIFIERS 0 1 11 10 NOTE: Connect Term inal No. 9 to most positive dc supply voltage -
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74C89 796HC SN15844N 741hm LM202H Mc 14025 pc MC 1723 CP LH0002C LH0002CN NH0005C DAC08CZ NH0014C DH0034
Abstract: ) (CONTâ'™D) FOLLOWING MAX. FORWARD VOLTAGE DROP (usually given at max. cont. D.C. current) (f> â'" At , equal to max. cont. working voltage, DC blocking voltage, or min. saturation voltage 0 - Breakdown , given PIV * â'" WV less than 70% of given PIV t - PRV equal to DC blocking voltage A â'" DC blocking , cycle average A â'"Cont. D.C. § â'" Above 25°C $ â'" Below 25°C FOLLOWING Section 6b â , '" Cont. D.C. t â'" lR (Is ^ lR) FOLLOWING Is @ VBO - Section 6b â'" One cycle average A - Cont -
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jrc 20730 5L80 Siemens RMO 503 SE itt ideal color 3323 ITT 6003 336 L0607
Abstract: to the emit­ ter. In other words, the direction of dc electron current is always oppo­ site to , conditions of current and voltage. Static characteristics are ob­ tained with dc potentials applied to , under various conditions of dc potentials on all the electrodes. The dynamic characteristics , is the output electrode. The dc alpha, there­ fore, is the ratio of the dc collector current I c to the dc emitter current I s: I0 0.981 = 0.98 In the comm on-emitter circuit shown in -
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rca transistor manual 1n547 equivalent rca transistor npn A13
Abstract: IM6402IPL tms9914anl sps8246 74LS140 npn transistor RCA 467 ferranti ula AEG TFK TELEFUNKEN PUT 2N6027 delco 466 N9602N sje389 MPT3N40 AM27S03DM AM27S03ADCB AM29721PCB2/DCBi AM27LSOODC/PC N82S09-I 93422 93L422PC AM931422DC AM93L422BPC/DC 93422DC/PC AM93422PC/DC 93422DC/PCAM93422PC/DC MB8414E MB8414E MB8414E/C MB8414E/C MB8414E/C UPD444C -
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transistor cross reference Westinghouse SCR handbook TFK 7 segment displays BROWN BOVERI DQ 2 Numeric Digital HPE 1150 LT 8224 ZENER DIODE
Abstract: ' specified" separately in succeeding tables. KEY RECTIFIERS V r â'" DC Blocking Voltage V f = Average , 1N538 1N539 1N540 G S S S S S s s s s s s 1N541 1N542 1N543 1N543A 1N544 1N544A -
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1609S ic audio power amp stk 2028 MC789AP HY 3506 substitute TAG 8747 triacs stk 419 -140 2G700 9799-G 018C1
Abstract: E is dc voltage to be dropped and I is total dc current through circuit. Zener Diodes â'" Optimum , 608© 27 0 0 -4 1 9.5 35 34 1W 609© 33 7.5 45 27 1W DC -41 610© 56 4 .5 110 16 1W OC-41 611© 62 4 .0 125 14 1W DC , 5 0 0 min 25 Tj Currant V (B R )G S S â g s s lo s s (m A dc) (Vo lts) (nAdc) (m A dc) PO Im W I (° C ) 20 1.0 1.0 to 9 .0 >5) 255 12 5 T O -7 2 -
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MSS1000 diode 3330r MC1303 mss1000 substitute of K C2026 Y transistor transistor LT 5221 AN-134
Abstract: a low frequency scope for your dc to 500 kHz measurements. And, only variable persistence gives , associated only with high frequency scopes. For full details on the new HP dc to 500 kHz variable , includes output voltages from 5.0 volts DC to 10,000 volts DC with output currents from 2 milliamperes , ENGINEERS MASTER D ire c to ry ), Pages 1727 to 1740. 60A? to DC, Regulated 400*3^ to DC, Regulated 28 VDC to DC, Regulated 28 VDC to 400*3?, 10 or 30 60 to 400*33, 10 or 30 TO: A b b ott T ra n sisto -
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2N3303 3TE445 866a RECTIFIER rca BB105G ECC88 FC117 H101/A SL621C 2300E/830 111/A SL630 CD2301/961
Abstract: -6, DDO-6, etc. ECG116 Figure 22 Silicon rectifier 600 volt P.R.V. 1.0 amp (d.c. resistive) ECG117 Figure 23 Silicon rectifier 600 volt P.R.V. 1.0 amp (d.c. resistive) max. ECG118 , Selenium color TV boost rectifierâ'"peak reverse voltage 800, d.c. output current, 2 MA resistive , .). ECG125 Figure 27 Silicon rectifier 1000 volt P.R.V. 1.0 amp (d.c. resistive) ECG156 , monolithic am plifier which utilizes an external DC voltage to control gain. In addition to communication -
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triac zd 607 zy 406 transistor 1N295X RS5743.3 Transistor y712 ti494 ZU62B ZU110 ZU110A ZV12B ZV27B ZV33B
Abstract: frequency. â'¢ F forward current, de ln noise current, equivalent input IR reverse current, dc Rg (formerly -
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35C10 C181S MEM3005 Semicon volume 1 sk a 3050f
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