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Part Manufacturer Description PDF & SAMPLES
V10E275PL2B Littelfuse Inc RESISTOR, VOLTAGE DEPENDENT, 350V, 55J, THROUGH HOLE MOUNT, RADIAL LEADED, ROHS COMPLIANT
V10E250PL1B5 Littelfuse Inc RESISTOR, VOLTAGE DEPENDENT, 320V, 50J, THROUGH HOLE MOUNT, RADIAL LEADED, ROHS COMPLIANT
V10E275PL1B5 Littelfuse Inc RESISTOR, VOLTAGE DEPENDENT, 350V, 55J, THROUGH HOLE MOUNT, RADIAL LEADED, ROHS COMPLIANT
V10E275PL2B5 Littelfuse Inc RESISTOR, VOLTAGE DEPENDENT, 350V, 55J, THROUGH HOLE MOUNT, RADIAL LEADED, ROHS COMPLIANT
V10E275PL1B1 Littelfuse Inc RESISTOR, VOLTAGE DEPENDENT, 350V, 55J, THROUGH HOLE MOUNT, RADIAL LEADED, ROHS COMPLIANT
SY10EP11UKG Microchip Technology Inc 10E SERIES, LOW SKEW CLOCK DRIVER, 2 TRUE OUTPUT(S), 0 INVERTED OUTPUT(S), PDSO8

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10E-2 Datasheet

Part Manufacturer Description PDF Type
10E2 Nihon Inter Electronics 200 V, diode Original
10E2 N/A The Diode Data Book with Package Outlines 1993 Scan
10E2 Nihon Inter Electronics SILICON RECTIFIER DIODE Scan

10E-2

Catalog Datasheet MFG & Type PDF Document Tags
Abstract: DIODE Type 10E2 OUTLINE DRAWING , JunctionTemperature Range Storage Temperature Range Symbol VRRM VRSM 10E2 200 400 50Hz, Half Sine , ) Junction to Ambient FORWARD CURRENT VS. VOLTAGE 10E2 10 , 1.0 1.2 1.4 INSTANTANEOUS FORWARD VOLTAGE (V) AVERAGE FORWARD POWER DISSIPATION 10E2 D.C , . AMBIENT TEMPERATURE Without Fin or P.C. Board 10E2 1.6 D.C. AVERAGE FORWARD CURRENT (A Nihon Inter Electronics
Original
10E2 diode
Abstract: DIODE FEATURES Type : 10E2 OUTLINE DRAWING * Miniature Size , 1.0 Approx Net Weight:0.33g 10E2 200 400 Ta=70°C 50Hz Half Sine Wave Resistive Load Unit V V A A A , Rth(j-a) Junction to Ambient 10E2 OUTLINE DRAWING (Dmensions in mm) FORWARD CURRENT VS. VOLTAGE 10E2 10 INSTANTANEOUS FORWARD CURRENT (A) 5 2 Tj=25°C Tj=150°C 1 0.5 , DISSIPATION 10E2 D.C. 1.4 AVERAGE FORWARD POWER DISSIPATION (W) 1.2 1.0 HALF SINE WAVE 0.8 Nihon Inter Electronics
Original
Abstract: -150 -155 -160 1.0e+2 1.0e+3 1.0e+4 1.0e+5 1.0e+6 -160 1.0e+2 1.0e+7 1.0e+3 , -150 -160 -170 1.0e+2 1.0e+3 1.0e+4 1.0e+5 1.0e+6 +25C +85C -40C -130 -140 -150 -160 1.0e+2 1.0e+7 1.0e+3 OFFSET FREQUENCY (Hz) 1.0e+4 1.0e+5 1.0e+6 , 1.0e+2 1.0e+3 1.0e+4 1.0e+5 1.0e+6 +25C +85C -40C -130 -140 -150 -160 1.0e+2 1.0e+7 1.0e+3 OFFSET FREQUENCY (Hz) 1.0e+4 1.0e+5 1.0e+6 1.0e+7 OFFSET Hittite Microwave
Original
HMC862LP3E
Abstract: PHASE NOISE (dBc/Hz) SSB PHASE NOISE (dBc/Hz) -130 -135 -140 -145 -150 -155 -160 1.0e+2 100MHz , 1.0e+6 1.0e+7 -160 1.0e+2 1.0e+3 1.0e+4 1.0e+5 1.0e+6 1.0e+7 OFFSET FREQUENCY (Hz , -160 -150 -170 1.0e+2 1.0e+3 1.0e+4 1.0e+5 1.0e+6 1.0e+7 -160 1.0e+2 1.0e+3 , GHz -130 +25C +85C -40C -140 -140 -150 -160 -150 -170 1.0e+2 1.0e+3 1.0e+4 1.0e+5 1.0e+6 1.0e+7 -160 1.0e+2 1.0e+3 1.0e+4 1.0e+5 1.0e+6 1.0e+7 Hittite Microwave
Original
ATC530L
Abstract: -130 -140 -150 -155 -160 1.0e+2 1.0e+3 1.0e+4 1.0e+5 1.0e+6 -160 1.0e+2 , -150 -160 -170 1.0e+2 1.0e+3 1.0e+4 1.0e+5 1.0e+6 +25C +85C -40C -130 -140 -150 -160 1.0e+2 1.0e+7 1.0e+3 OFFSET FREQUENCY (Hz) 1.0e+4 1.0e+5 1.0e+6 , 1.0e+2 1.0e+3 1.0e+4 1.0e+5 1.0e+6 +25C +85C -40C -130 -140 -150 -160 1.0e+2 1.0e+7 1.0e+3 OFFSET FREQUENCY (Hz) 1.0e+4 1.0e+5 1.0e+6 1.0e+7 OFFSET Hittite Microwave
Original
hmc862 ATC53
Abstract: -150 -155 -160 1.0e+2 1.0e+3 1.0e+4 1.0e+5 1.0e+6 -160 1.0e+2 1.0e+7 1.0e+3 , GHz 15 GHz -130 -140 -150 -160 -170 1.0e+2 1.0e+3 1.0e+4 1.0e+5 1.0e+6 +25C +85C -40C -130 -140 -150 -160 1.0e+2 1.0e+7 1.0e+3 OFFSET FREQUENCY (Hz , ) 6.0 INPUT FREQUENCY (GHz) INPUT FREQUENCY (GHz) -140 -150 -160 -170 1.0e+2 1.0e+3 1.0e+4 1.0e+5 1.0e+6 +25C +85C -40C -130 -140 -150 -160 1.0e+2 Hittite Microwave
Original
Abstract: 0 1.0E-3 IM t Ta=25°C Ta=50°C Ta=100°C =0.5 t(s) 1.0E-2 1.0E-1 1.0E+0 Zth(j-a)/Rth , ) 0.1 Single pulse 0.0 1.0E-2 1.0E-1 1.0E+0 1.0E+1 T =tp/T tp 1.0E+2 1.0E+3 Fig. 5 , versus voltage applied (typical values). IR(uA) C(pF) 200 Tj=125°C F=1MHz Tj=25°C 1.0E+3 1.0E+2 1.0E+1 1.0E+0 Tj=25°C Tj=75°C 100 50 1.0E-1 VR(V) 1.0E-2 20 VR(V) 10 25 30 35 40 0 5 STMicroelectronics
Original
STPS140U DO214AA
Abstract: is present on the VCC pin of the accelerometer. 1.0E+0 1.0E­1 1.0E­2 Vrms 1.0E­3 1.0E­4 1.0E­5 , 1.0E­2 Vrms 1.0E­3 1.0E­4 1.0E­5 1.0E­6 SAMPLING FREQUENCY VCC n*fs ­ fBW n*fs n*fs + fBW Hz , 1.0E­2 Vrms 1.0E­3 1.0E­4 1.0E­5 1.0E­6 Vout 0 200 400 600 FREQUENCY (Hz) 800 1000 (c , AN1559 1.0E+0 1.0E­1 1.0E­2 Vrms 1.0E­3 1.0E­4 1.0E­5 1.0E­6 41.0 SAMPLING FREQUENCY INJECTED SIGNAL , 42.0 (a) 1.0E+0 1.0E­1 1.0E­2 Vrms 1.0E­3 1.0E­4 1.0E­5 1.0E­6 1.0E­7 41.0 41.2 41.4 41.6 FREQUENCY Motorola
Original
aCCELEROMETER conditioning signal
Abstract: . 1.0E+0 Vout 1.0E­1 1.0E­2 Vrms Given the brief example on how aliasing can occur, how does the , 42.0 (a) 1.0E+0 VCC 1.0E­1 KEEP OUT ZONE Vrms 1.0E­2 1.0E­3 SAMPLING FREQUENCY , FREQUENCY (kHz) 41.8 42.0 (b) 1.0E+0 ACCELEROMETER INPUT SIGNALS 2 Vout 1.0E­1 1.0E­2 , paracitics. Vout INJECTED SIGNAL FREQUENCY Vrms 1.0E­2 SAMPLING FREQUENCY 1.0E­3 · The , signal in the passband. 1.0E+0 1.0E­1 1.0E­2 Vrms VCC INJECTED SIGNAL FREQUENCY · Motorola
Original
aCCELEROMETER APPLICATION CIRCUIT AN-1559 Nippon capacitors AN1559/D MMAS40G
Abstract: DIODE 10E2 Type : OUTLINE DRAWING FEATURES * Miniature Size * Low Forward Voltage drop * Low Reverse Leakage Current * High Surge Capability * 52mm Inside Tape Spacing Package Available Maximum Ratings Approx Net Weight:0.33g Rating Symbol Repetitive Peak Reverse Voltage Non-repetitive Peak Reverse Voltage Average Rectified Output Current 10E2 Unit VRRM , uA V °C/W 10E2 OUTLINE DRAWING (Dmensions in mm) Nihon Inter Electronics Nihon Inter Electronics
Original
Abstract: PHASE NOISE (dBc/Hz) SSB PHASE NOISE (dBc/Hz) -130 -135 -140 -145 -150 -155 -160 1.0e+2 100MHz , 1.0e+6 1.0e+7 -160 1.0e+2 1.0e+3 1.0e+4 1.0e+5 1.0e+6 1.0e+7 OFFSET FREQUENCY (Hz , 1.0e+2 1.0e+3 1.0e+4 1.0e+5 1.0e+6 1.0e+7 -160 1.0e+2 1.0e+3 1.0e+4 1.0e+5 , +85C -40C -140 -140 -150 -160 -150 -170 1.0e+2 1.0e+3 1.0e+4 1.0e+5 1.0e+6 1.0e+7 -160 1.0e+2 1.0e+3 1.0e+4 1.0e+5 1.0e+6 1.0e+7 OFFSET FREQUENCY (Hz Hittite Microwave
Original
HMC862LP3
Abstract: 1.0E-3 1.0E-2 1.0E-1 1.0E+0 Fig. 6-1: Relative variation of thermal impedance junction to , ) Ta=100°C IM t t(s) =0.5 0 1.0E-3 1.0E-2 1.0E-1 1.0E+0 Fig. 6-2: Relative , 0.6 0.6 = 0.5 0.4 = 0.5 0.4 T = 0.2 0.2 Single pulse 0.0 1.0E-2 1.0E-1 =tp/T tp(s) 1.0E+0 1.0E+1 T = 0.2 0.2 = 0.1 = 0.1 tp 1.0E+2 STMicroelectronics
Original
STPS130A STPS130U DO214AC S130 STPS130A/U
Abstract: 1.0E-1 1.0E-2 FREQUENCY 1.0E-3 1 .OE-4 1.0E-5 1.0E-6 1.0E-7 L 41.0 > I / / 41.2 41.4 41.6 41.8 42.0 FREQUENCY (kHz) (a) 1.0E+0 1 1.0E-1 1.0E-2 1.0E-3 1.0E-4 / 1.0E-5 1.0E-6 1.0E-7 , the culprit in producing aliased signal. 1.0E-1 1.0E-2 _ i_ i- - - - ;- , conditioning circuitry in the accelerometer that includes gain. 1.0E-1 1.0E-2 IT J 1 41.2 41.4 41.6 41.8 42.0 FREQUENCY (kHz) (a) 1.0E+0 1.0E-1 ^ 1.0E-2 , 1.0E-3 1.0E-4 / 1.0E-5 1.0E-6 4 » -
OCR Scan
MMAS40G10D
Abstract: 10E2 â'¢ Compatible with both physical contact (PC) and 8° angled physical contact (APC , 10E2 1020 1040 10ZP 10LC 1038 1047 13A2 13AF 10MU 10M1 10E0 1081 1062 10TB 1087 1030 , 1047 1050 1057 1062 1081 1086 1087 1089 10E0 10E2 10LC 10M1 10MU 10TB 10TD 10TR 10TX Tempo Research
Original
HMS-10A E2000 HMS-10 MIL-T-29504 430/H SMA-905/906
Abstract: 1.0E-2 Vrms Given the brief example on how aliasing can occur, how does the accelerometer relate to , Vrms 1.0E-2 1.0E-3 SAMPLING FREQUENCY 1.0E-4 1.0E-5 1.0E-6 n*fs - fBW n*fs n*fs + , Vout 1.0E-1 1.0E-2 Vrms The accelerometer is a ratiometric electro-mechanical transducer , Semiconductor Points to Note: 1.0E+0 · INJECTED SIGNAL FREQUENCY 1.0E-1 Vout Vrms 1.0E-2 , 1.0E-2 · 1.0E-3 SAMPLING FREQUENCY 1.0E-4 1.0E-5 ALIASING AVOIDANCE KEYS 1.0E-6 · Freescale Semiconductor
Original
TAI 0e
Abstract: = 0.2 T IM 20 t =0.5 Single pulse = 0.1 t(s) 0 1.0E-3 1.0E-2 =tp/T , values). 0.0 1.0E-4 1.0E-3 1.0E-2 1.0E-1 tp 1.0E+0 Fig. 6: Junction capacitance versus reverse voltage applied (typical values). C(pF) IR(mA) 1.0E+2 2000 F=1MHz Tj=25°C Tj=125°C 1.0E+1 1000 1.0E+0 500 1.0E-1 Tj=25°C 200 1.0E-2 VR(V) 1.0E-3 0 5 10 VR STMicroelectronics
Original
STPS5L25B STPS5L25B/B-1
Abstract: = 0.1 0.2 Single pulse t tp(s) t(s) =0.5 1.0E-2 1.0E-1 1.0E+0 Fig. 5 , 1.0E-3 1.0E-2 =tp/T 1.0E-1 1.0E+0 Fig. 6: Junction capacitance versus reverse voltage , =100°C 1.0E+2 1.0 1.0E+1 Tj=25°C 1.0E+0 VR(V) VR(V) 1.0E-1 tp 0 2 4 6 8 STMicroelectronics
Original
STPS40L15CW
Abstract: = ± 2.3 V to ± 5 V VCM = 0 V to ± 10 V RL = 10 kâ"¦, VS = ± 2.3 V to ± 5 V 1.5 10Ê2 10Ê2 10Ê2 10Ê2 â'"VS + 1.9 â'"VS + 2.1 â'"VS + 1.9 â'"VS + 2.1 93 +VS â'" 1.2 +VS â , ± 18 0.75 1.0 2.0 8.0 10Ê2 10Ê2 VS = ± 5 V to ± 18 V POWER SUPPLY Operating , ± 2.3 V to ± 5 V 10Ê2 10Ê2 10Ê2 10Ê2 â'"VS + 1.9 â'"VS + 2.1 â'"VS + 1.9 â'"VS + 2.1 , 1.4 â'"VS + 1.2 â'"VS + 1.6 ± 18 0.75 1.0 2.0 8.0 10Ê2 10Ê2 VS = ± 2.3 V to  Analog Devices
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AD621 AD621A C00776
Abstract: 0.6 = 0.5 0.5 0.4 0.3 = 0.2 0.2 = 0.1 0.1 tp Single pulse 0.0 1.0E-2 1.0E-1 1.0E+0 1.0E+1 =tp/T 1.0E+2 tp 1.0E+3 Fig. 6: Reverse leakage current versus reverse voltage , thickness:35 um) 1.0E+3 Tj=100°C 90 1.0E+2 80 Tj=75°C 70 1.0E+1 60 50 Tj STMicroelectronics
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STPS1100U 365pF marking E11
Abstract: DIODE Type 10E2 OUTLINE DRAWING Construction: Diffusion Type Rectifier Diode Application: For General Use / Maximum Ratings Approx Net Weight:0.32g Rating Repetitive Peak Reverse Voltage Nonrepetitive Peak Reverse Voltage Average Rectified Output Current RMS Forward Current Surge Forward Current Operating JunctionTemperature Range Storage Temperature Range Symbol VRRM VRSM 10E2 200 400 50Hz, Half Sine Nihon Inter Electronics
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Abstract: operation from -40°C to 85°C. FUNCTION TABLES INPUTS 10EÏ L L L H H 10Ë2 L L H L H 1A L H X X X 1Y1 L H L H -
OCR Scan
CDC209 CDC209-7 AS108C 74AC11208 74AC11208-7 CDC209/209-7
Abstract: t t(s) =0.5 0 1.0E-3 t(s) =0.5 1.0E-2 1.0E-1 1.0E+0 Figure 7: Relative , (Cu)=35um, recommended pad layout) (SMA) 0 1.0E-3 1.0E-2 1.0E-1 1.0E+0 Figure 8 , values) 0.0 1.0E-2 =tp/T tp(s) 1.0E-1 1.0E+0 1.0E+1 tp 1.0E+2 1.0E+3 Figure STMicroelectronics
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STPS130 st smb package marking DO-214AC DO-214AA
Abstract: =100°C IM 2 t 1 =0.5 1 t(s) 0 1.0E-3 1.0E-2 1.0E-1 1.0E+0 Fig. 4-1 , 1.0E-2 1.0E-1 1.0E+0 Fig. 4-2: Relative variation of thermal impedance junction to ambient , 0.4 T = 0.2 0.2 Single pulse 0.0 1.0E-2 1.0E-1 =tp/T tp(s) 1.0E+0 1.0E+1 T = 0.2 0.2 = 0.1 = 0.1 tp 1.0E+2 Single pulse 1.0E+3 Fig. 5: Reverse STMicroelectronics
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Abstract: [ 3 18 ] 10e1 gnd[ 4 17 ] 10e2 gnd[ 5 16 ]vcc gnd[ 6 15 ]vcc gnd[ 7 14 ] 2a 2Y1 t 8 13 ] 20êt , -revised march 1994 logic symbol^ 15it 10e2 2ÃE1 20e2 t This symbol Is in accordance with ANSI/IEEE Std , 4.2 7 9.3 4.2 10.1 4.2 10.1 tPLH 10E1, 10E2, and Any Y 4.6 7.3 9.6 4.6 10.7 4.6 10.7 tPHL 20E1, 20E2 4.8 7.7 10.2 4.8 11 4.8 11 tPZH 10E2 or 20E2 Any Y 4.3 7.2 9.4 4.3 10.4 4.3 10.4 IPZL tSETor2ÃET 5.3 9 12.2 5.3 13.5 5.3 13.5 tPHZ 10E2 or 20E2 Any Y 3 5.4 7.5 3 8 3 8 tpLZ 10Ã'T or 2à -
OCR Scan
10E1 20E1 20E2 S55303
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