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"fet power"

Catalog Datasheet MFG & Type PDF Document Tags
Abstract: ) FET (c) t VOUT = (c) DTS (1-D) TS Figure 2. VIN (1-D) POWER designer L , ) FET RDS ON I 2R IRMS FET RDS ON R : 3 4 50% 2 POWER designer FET , Q2 C Figure 4. 2 FET 4 R POWER designer Figure 4 FET 2 LM5020 BJT , VGS vs. (nC) VDS4nC FET 2 (8nC) national.com/powerdesigner 5 POWER designer FET , POWER designer Expert tips, tricks, and techniques for powerful designs www.national.com National Semiconductor
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LM5112 LM25037 LM25037AMT PA1005 PA1005.100NL sir472 SER2013-362ML SiR468DP 35SVPD47M BAT54 SI7892BDP 12VIN
Abstract: , Pch Power MOS FET SW ITCHING, Pch Pow er MOS FET SW ITCHING, Pch Pow er MOS FET SW ITCHING, Pch Power MOS FET SW ITCHING, Pch Power MOS FET SW ITCHING, Pch Pow er MOS FET SW ITCHING, Pch Pow er MOS FET SW ITCHING, Pch Pow er MOS FET SW ITCHING, Pch Pow er MOS FET SW ITCHING, Pch Power MOS FET SW ITCHING, Pch Power MOS FET HIGH-SPEED SW ITCHING, Pch Power MOS FET HIGH-SPEED SW ITCHING, Pch Power MOS FET , , Neh MOS FET SW ITCHING, Neh M OS FET SW ITCHING. Neh Pow er MOS FET SW ITCHING, Neh Power MOS FET SW -
OCR Scan
2SA1611 triac tic 236 SCR U 537 transistor su 312 MP25 transistor GA1L32 transistor 2SA 640 1S2835 1S2836 1S2837 1S2838 1SS123 1SS220
Abstract: Ptotal FET Power Dissipation In A Typical 100 KHz. Offline Hard Switching RCD Reset Forward Converter , Ptotal 2 1 0 FET Type1 FET Type2 FET Type 3 FET Type ) Devices ( Power MOSFET4 FET , 11.77 FET Power Dissipation In A Typical 200KHz. Offline Hard Switching RCD Reset Forward Converter , ( Power MOSFET) Fig. 5: FET Loss Distribution Comparison @ 200kHz. From Figure 4 and 5, one can , A More Realistic Characterization Of Power MOSFET Output Capacitance Coss The Power MOSFET has International Rectifier
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calculating of switching transformer 200khz power mosfet test circuits for Mosfet capacitance mosfet power totem pole CIRCUIT zvs ZCS 3 5 3 5 calculating rectifier circuits
Abstract: Ptotal FET Power Dissipation In A Typical 100 KHz. Offline Hard Switching RCD Reset Forward Converter , Ptotal 2 1 0 FET Type1 FET Type2 FET Type 3 FET Type ) Devices ( Power MOSFET4 FET , 11.77 FET Power Dissipation In A Typical 200KHz. Offline Hard Switching RCD Reset Forward Converter , ( Power MOSFET) Fig. 5: FET Loss Distribution Comparison @ 200kHz. From Figure 4 and 5, one can , Application Note AN-1001 A More Realistic Characterization of Power MOSFET Output Capacitance International Rectifier
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pulse transformer fet 100C how to test mosfet
Abstract: redundant board power), and to show how the IR5001S can be used to implement Reverse Polarity protection for ­ 48V input DC-DC converters. The front side of the demo board is shown in Fig. 1. FET Check , 1/8 and 1/4 Brick connections IRF6644 Input A- Output- Input B- FET Check Switch , typical Rds(on), 100V, N-Channel active ORing FETs, in the DirectFET MN package. The IRF644 power MOSFET's used in this circuit are capable of handling up to 370W of redundant power across a 36V to 75V range -
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IRDC5001-LS370W IRF6662 how to check an ic working or not IR2085S ir2085 48v mosfet switch 48v to 5v dc schematic
Abstract: (Power Good) 5 DAC 1%( ) 2 FET rDS_ON 2 1 FET FET , 1.3V 5 DAC DAC 1%( ) 50kHz 1MHz 2 2 / FET MOSFET , Controller Test Circuit FIGURE 2. Motherboard Power Supply for Pentium II Processor Core (1.3V - , ( ) FIGURE 3. Motherboard Power Supply for Pentium II Processor Core (1.8V - 2.8V, 14.2A), GTL Bus (1.5V, 4A), and Legacy I/O (2.5V, 0.3A). High side FET is used to provide the current limit. 7 National Semiconductor
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LM2637 LM2635 ic lm2637 vrm ic SCR pwm FZ 98 1500 6.3V 12v 20A WITH FET fz 7a 1500 6.3v DS100848-03-JP LM2637M
Abstract: backplane contacts meet. To meet this specification requires an FET switch that provides power to the high , power to a board. These mechanisms include: · Delayed turn on of the FET after application of power , result. When power is applied to the system, the FET tries to turn on due to its internal gate to drain , /17/03 X80070 X80071 X80072 X80073 the power FET gives the designer many options for configuring , 12/9/03 OVERVIEW Systems that use -48V power supplies generally have a requirement that boards may Xicor
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AN169 IRF23N15 39A zener diode capacitor 200uF 12V 12v ZENER DIODE 300uF
Abstract: . 24 independently switchable power FETs Low equivalent on resistance (200 m typ) 2A switching , -15V Power Supply 27 TP38D 28 TP44D 29 SS_CMD_12 30 TP37D 31 32 Memory Case Ground +15V Power Supply Switch 12 Control Input TTL voltage level switch input SS_CMD , LD14_OUT Switch 14 Low Side FET Drain 46 LD14_IN Switch 14 High Side FET Source 47 , FET Drain 49 LD15_IN Switch 15 High Side FET Source 50 TP37A 51 LD12_OUT Maxwell Technologies
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tp41c 1 amp FET switch TP41A tp5d TP40D TP10D
Abstract: FET. This device must have a low on resistance to minimize power dissipation and a high reverse , /329-4700 · Fax: 781/326-8703 · www.analog.com Hot Swap and Blocking FET Control Using 2 ADM1073 Hot , diode in series with the hot swapping FET. This component ensures that current can only flow into the , 1 shows this implementation in an ADM1073 controlled system. This solution can have serious power , explained in this application note, another solution for systems where this power loss is unacceptable is Analog Devices
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AN-694 UV diode E04578
Abstract: ) www.national.com/pf/LM/LM3100.html 2 1.2 1.5 POWER designer Figure 1 FET Figure 1a FET FET FET FET FET 0.3V MOSFET RDSON MOSFET FET MOSFET RDSONQGMOSFET MOSFET Figure 1b 2MOSFET FET MOSFET R DSON RDSONFET PCB power.national.com , POWER designer Expert tips, tricks, and techniques for powerful designs No National Semiconductor
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LM3100 LM2747 lm5035 SIGNAL PATH designer 5A36V TSSOP-20EP LM5035
Abstract: X13769XJ2V0CD00 11-20 RF and Microwave Devices Discrete s Power TR./FET (2SC, NE, NEL, NEM, NES, NEZ , . Tr. C-Band Po. Amp. Power GaAs FET C-Band Po. Amp. Power GaAs FET C-Band Po. Amp. Power GaAs FET C-Band Po. Amp. Power GaAs FET C-Band Po. Amp. Power GaAs FET C-Band Po. Amp. Power GaAs FET C-Band Po. Amp. Power GaAs FET C-Band Po. Amp. Power GaAs FET C-Band Po. Amp. Power GaAs FET C-Band Po. Amp. Power GaAs FET C-Band Po. Amp. Power GaAs FET C-Band Po. Amp. Power GaAs FET C-Band Po. Amp. Power GaAs NEC
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nf025 NE27283 upc27 NE42484 x-band power transistor 100W nf025db 950MH 500MH PC8119T PC8120T PC8130TA PC8131TA
Abstract: . 24 independently switchable power FETs Low equivalent on resistance (200 m typ) 2A switching , TP2A 23 VDD 24 TP38B 25 GND Analog Ground 26 VSS -15V Power Supply 27 TP38D 28 TP44D 29 SS_CMD_12 30 TP37D 31 32 Memory Case Ground +15V Power , LD14_OUT Switch 14 Low Side FET Drain 46 LD14_IN Switch 14 High Side FET Source 47 , FET Drain 49 LD15_IN Switch 15 High Side FET Source 50 TP37A 51 LD12_OUT Maxwell Technologies
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tp41c transistor low voltage mosfet switch 3 amp 200 Amp mosfet TP10A Analog FET Switch tp3d
Abstract: ) are OR-ed to provide redundant board power), and to show how the IR5001 can be used to implement , Fig. 1. FET Check LEDs Input A+ Output+ BUS Caps IRF7495 Input B+ BUS converter / 1 , MOSFETs FET Check Switch IR5001 Active ORing Controllers Figure 1. IRDC5001-LS48V Demo Board , FETs, also in SO8 package. The power MOSFETs used in this circuit are capable of handling up to 200W of redundant power in 36V to 75V range. For lower power applications, it is recommended to use International Rectifier
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power supply driver led 60w schematic irf7497 IC ir5001 International Power Sources IRF7497
Abstract: =32.4dBm; POI=23dBm; GLIN=12.3dB. KGF1283 SOT-89 Plastic power driver FET, 26dBm@1GHz 5.8V 70mA 15dB 25dBm 850MHz KGF1284 SOT-89 Plastic power driver FET, 21.5dBm@1.9GHz 3.4V 70mA 10dB 21.5dBm 1.9GHz KGF1305T Cer Pwr FET w/H.S. Ceramic power FET for , ~10°C/Watt. KGF1312 SOT-89 plastic power FET, 31.5dBm@850MHz, efficiency > 70% 5.8V , =17.3dB. KGF1313 SOT-89 Plastic power FET, 27dBm@1.9GHz/3.4V, 31dBm@850MHz/5.8V 3.4V/ 5.8V 200mA -
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KGF1155B KGF1156 KGF1165 KGF1175B 38mm2 NF 935 FET 8PIN fet dual gate sot143 GaAs FET sot89 P01 SOT-89 850MH KGF1181B
Abstract: trench MOSFET technology, the power losses associated with the FET's in a Synchronous Buck (sync buck , . To reduce the power losses in the control FET, a technology with a Rdson x Qswitch product less than 50m-nC is needed and to reduce the power losses in the sync FET, a technology with a Rdson x , maximize the channel density was not sufficient to reduce the sync FET power losses. The reason for this , the IRF7811W can also be used as a sync FET in lower power applications depending on the target International Rectifier
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MOSFET LOSSES SYNC BUCK FET DATA BOOK fet nc IC MOSFET QG IRF7811 IRF7822 IRF7811W/IRF7822 IRF7811/IRF7809
Abstract: , microprocessor power applications. The IRLR8503 (Figure 1) was optimized for the control FET socket, while the , advanced HEXFET Power MOSFET technology to achieve very low on-resistance. The reduced conduction losses makes it ideal for high efficiency DC-DC converters that power the latest generation of , offers an extremely low combination of Qsw & RDS(on) for reduced losses in control FET applications. The package is designed for vapor phase, infra-red, convection, or wave soldering techniques. Power International Rectifier
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IRFR120 IRFU120 EIA-541 10BQ040 fet dpak FET marking code IRLR8503P EIA-481
Abstract: , microprocessor power applications. The IRLR8503 (Figure 1) was optimized for the control FET socket, while the , advanced HEXFET Power MOSFET technology to achieve very low on-resistance. The reduced conduction losses makes it ideal for high efficiency DC-DC converters that power the latest generation of , offers an extremely low combination of Qsw & RDS(on) for reduced losses in control FET applications. The package is designed for vapor phase, infra-red, convection, or wave soldering techniques. Power International Rectifier
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IRF FET FET MARKING QG fet data book free download IRLR8103V High Current Low Side Switch fet D-PAK package
Abstract: application of power. · Manual or remote control of the FET to allow the device to be turned on only under , Vgate Isurge When power is applied to the system, the FET tries to turn on due to its internal , overcurrent conditions, provide dual undervoltage shutsdown thresholds and delay the turnon of the power FET , power on average than a zener diode/resistor only combination that must always provide the maximum current needed by the X80070 plus zener regulation current. Systems that use -48V power supplies Intersil
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MJD340
Abstract: .8 Upper FET Power Dissipation .8 Lower FET Power Dissipation , gate drive voltage. Gate charge, Qg, should be less that 40nC. 8.0 UPPER FET POWER DISSIPATION The power dissipation in the upper FET, Q1 is the sum of the switching loss and conduction or I2 R loss. As , . Total main FET power dissipation equals (0.60+0.063) = 0.663W. 9.0 LOWER FET POWER DISSIPATION The Microsemi
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LX1673 LX1671 5a2 zener diode fet cross reference Si4842DY
Abstract: ) MOSFET. Power ground. Connect to the synchronous FET source pin (power ground). Output gate drive for , present a power saving in I2R losses, the FET's die area is larger and thus the effective input , pulling S-MOD to logic LOW, thus disabling the bottom FET drive. This has the effect of saving power at , SC1405D High Speed Synchronous Power MOSFET Smart Driver POWER MANAGEMENT Description , propagation delay from input transition to the gate of the power FETs. Adaptive Overlap Protection circuit Semtech
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IR7811 SC1405DISTRT 1N4148 SC1405 SC1405DITSTRT TSSOP-14 FDB7030
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