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Abstract: ) FET (c) t VOUT = (c) DTS (1-D) TS Figure 2. VIN (1-D) POWER designer L , ) FET RDS ON I 2R IRMS FET RDS ON R : 3 4 50% 2 POWER designer FET , Q2 C Figure 4. 2 FET 4 R POWER designer Figure 4 FET 2 LM5020 LM5020 BJT , VGS vs. (nC) VDS4nC FET 2 (8nC) national.com/powerdesigner 5 POWER designer FET , POWER designer Expert tips, tricks, and techniques for powerful designs www.national.com ... National Semiconductor
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datasheet

8 pages,
456.61 Kb

LM25037AMT LM5112 LM25037 FET 5020 power n fet DO1813-331 si7892bdp SIGNAL PATH designer DO1813 42CTQ030S SiR472DP LM5020 35SVPD47M SiR468DP SER2013-362ML sir472 PA1005.100NL PA1005 TEXT
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Abstract: , Pch Power MOS FET SW ITCHING, Pch Pow er MOS FET SW ITCHING, Pch Pow er MOS FET SW ITCHING, Pch Power MOS FET SW ITCHING, Pch Power MOS FET SW ITCHING, Pch Pow er MOS FET SW ITCHING, Pch Pow er MOS FET SW ITCHING, Pch Pow er MOS FET SW ITCHING, Pch Pow er MOS FET SW ITCHING, Pch Power MOS FET SW ITCHING, Pch Power MOS FET HIGH-SPEED SW ITCHING, Pch Power MOS FET HIGH-SPEED SW ITCHING, Pch Power MOS FET , , Neh MOS FET SW ITCHING, Neh M OS FET SW ITCHING. Neh Pow er MOS FET SW ITCHING, Neh Power MOS FET SW ... OCR Scan
datasheet

6 pages,
462.34 Kb

2SA1611 2SJ19 3 pin mini mold transistor FA114M M.P Diode RD6.2 STA 933 TIC 122 Transistor tra 103 triac tic 236 c triac 371 transistor high voltage transistor af 178 transistor 2SA 640 1S2835 1S2836 GA1L32 1S2835 1S2836 MP25 transistor 1S2835 1S2836 transistor su 312 1S2835 1S2836 SCR U 537 1S2835 1S2836 triac tic 236 1S2835 1S2836 1S2835 1S2835 1S2836 1S2836 1S2837 1S2838 1SS123 1SS220 1SS221 1SS222 1SS223 2SA811A 2SA812 2SA1226 2SA1330 2SA1385-Z 2SA1400-Z 2SA1413-Z 2SA1462 2SA1463 2SA1B08 2SA1610 2SA1612 TEXT
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Abstract: Ptotal FET Power Dissipation In A Typical 100 KHz. Offline Hard Switching RCD Reset Forward Converter , Ptotal 2 1 0 FET Type1 FET Type2 FET Type 3 FET Type ) Devices ( Power MOSFET4 FET , 11.77 FET Power Dissipation In A Typical 200KHz. Offline Hard Switching RCD Reset Forward Converter , ( Power MOSFET) Fig. 5: FET Loss Distribution Comparison @ 200kHz. From Figure 4 and 5, one can , A More Realistic Characterization Of Power MOSFET Output Capacitance Coss The Power MOSFET has ... International Rectifier
Original
datasheet

3 pages,
40.18 Kb

100C 200W 100K transformer fet data book free download how to test mosfet high power FET Transistor fast switching FET forward converter zvs driver pulse transformer fet calculating rectifier circuits zvs ZCS 3 5 3 5 mosfet power totem pole CIRCUIT test circuits for Mosfet capacitance 200khz power mosfet calculating of switching transformer TEXT
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Abstract: Ptotal FET Power Dissipation In A Typical 100 KHz. Offline Hard Switching RCD Reset Forward Converter , Ptotal 2 1 0 FET Type1 FET Type2 FET Type 3 FET Type ) Devices ( Power MOSFET4 FET , 11.77 FET Power Dissipation In A Typical 200KHz. Offline Hard Switching RCD Reset Forward Converter , ( Power MOSFET) Fig. 5: FET Loss Distribution Comparison @ 200kHz. From Figure 4 and 5, one can , Application Note AN-1001 AN-1001 A More Realistic Characterization of Power MOSFET Output Capacitance ... International Rectifier
Original
datasheet

4 pages,
89.86 Kb

how to test mosfet AN-1001 100C pulse transformer fet test circuits for Mosfet capacitance TEXT
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Abstract: redundant board power), and to show how the IR5001S IR5001S can be used to implement Reverse Polarity protection for ­ 48V input DC-DC converters. The front side of the demo board is shown in Fig. 1. FET Check , 1/8 and 1/4 Brick connections IRF6644 IRF6644 Input A- Output- Input B- FET Check Switch , typical Rds(on), 100V, N-Channel active ORing FETs, in the DirectFET MN package. The IRF644 IRF644 power MOSFET's used in this circuit are capable of handling up to 370W of redundant power across a 36V to 75V range ... Original
datasheet

5 pages,
128.31 Kb

power n fet oring mosfet controllers of fet IRF6662 IRF6644 IRF644 International Power Sources IR5001S IRDC2085S-DF IRDC5001-LS370W 48v to 5v dc schematic 48v mosfet switch ir2085 IR2085S how to check an ic working or not TEXT
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Abstract: (Power Good) 5 DAC 1%( ) 2 FET rDS_ON 2 1 FET FET , 1.3V 5 DAC DAC 1%( ) 50kHz 1MHz 2 2 / FET MOSFET , Controller Test Circuit FIGURE 2. Motherboard Power Supply for Pentium II Processor Core (1.3V - , ( ) FIGURE 3. Motherboard Power Supply for Pentium II Processor Core (1.8V - 2.8V, 14.2A), GTL Bus (1.5V, 4A), and Legacy I/O (2.5V, 0.3A). High side FET is used to provide the current limit. 7 ... National Semiconductor
Original
datasheet

17 pages,
601.59 Kb

LM2635 SCR SN 102 6MV1500GX M24B LM2637 fz 7a 1500 6.3v 12v 20A WITH FET FZ 98 1500 6.3V SCR pwm vrm ic ic lm2637 TEXT
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Abstract: backplane contacts meet. To meet this specification requires an FET switch that provides power to the high , power to a board. These mechanisms include: · Delayed turn on of the FET after application of power , result. When power is applied to the system, the FET tries to turn on due to its internal gate to drain , /17/03 X80070 X80070 X80071 X80071 X80072 X80072 X80073 X80073 the power FET gives the designer many options for configuring , 12/9/03 OVERVIEW Systems that use -48V power supplies generally have a requirement that boards may ... Xicor
Original
datasheet

5 pages,
622.7 Kb

Zener diode 2A 300V MJD340 AN169 300uF 12v ZENER DIODE capacitor 200uF 12V 39A zener diode IRF23N15 X80070 TEXT
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Abstract: . 24 independently switchable power FETs Low equivalent on resistance (200 m typ) 2A switching , -15V Power Supply 27 TP38D TP38D 28 TP44D TP44D 29 SS_CMD_12 30 TP37D TP37D 31 32 Memory Case Ground +15V Power Supply Switch 12 Control Input TTL voltage level switch input SS_CMD , LD14_OUT Switch 14 Low Side FET Drain 46 LD14_IN Switch 14 High Side FET Source 47 , FET Drain 49 LD15_IN Switch 15 High Side FET Source 50 TP37A TP37A 51 LD12_OUT ... Maxwell Technologies
Original
datasheet

11 pages,
85.79 Kb

tp6c TP5A TP41D 24SW tp2d TP-5C TP10D TP40D tp5d TP41A 1 amp FET switch tp41c TEXT
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Abstract: FET. This device must have a low on resistance to minimize power dissipation and a high reverse , /329-4700 · Fax: 781/326-8703 · www.analog.com Hot Swap and Blocking FET Control Using 2 ADM1073 ADM1073 Hot , diode in series with the hot swapping FET. This component ensures that current can only flow into the , 1 shows this implementation in an ADM1073 ADM1073 controlled system. This solution can have serious power , explained in this application note, another solution for systems where this power loss is unacceptable is ... Analog Devices
Original
datasheet

4 pages,
78.62 Kb

UV diode ADM1073 -48VRTN AN-694 TEXT
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Abstract: ) www.national.com/pf/LM/LM3100.html 2 1.2 1.5 POWER designer Figure 1 FET Figure 1a FET FET FET FET FET 0.3V MOSFET RDSON MOSFET FET MOSFET RDSONQGMOSFET MOSFET Figure 1b 2MOSFET FET MOSFET R DSON RDSONFET PCB power.national.com , POWER designer Expert tips, tricks, and techniques for powerful designs No ... National Semiconductor
Original
datasheet

8 pages,
1047.54 Kb

SIGNAL PATH designer LM3100 LM2747 lm5035 TEXT
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Archived Files

Abstract Saved from Date Saved File Size Type Download
CLY 10  GaAs FET power amplifier for mobile phones  GaAs FET power amplifier for mobile phones  GaAs FET power amplifier for mobile phones  GaAs FET power amplifier for mobile phones  Infineon Technologies AG - Products - GaAs Power FETs
/datasheets/files/infineon/wwwinf~1.com/produc~1/pro~2419.htm
Infineon 26/10/2000 23.78 Kb HTM pro~2419.htm
CLY 10  GaAs FET power amplifier for mobile phones  GaAs FET power amplifier for mobile phones  GaAs FET power amplifier for mobile phones  GaAs FET power amplifier for mobile phones  Infineon Technologies AG - Products - GaAs Power FETs
/datasheets/files/infineon/wwwinf~1.com/produc~1/pro~1930.htm
Infineon 26/10/2000 23.66 Kb HTM pro~1930.htm
No abstract text available
/download/2259362-169530ZC/gaasmoco.zip ()
Infineon 07/09/2000 36.13 Kb ZIP gaasmoco.zip
GaAS FET Power Amplifier Hybrid Power Amplifiers Hybrid Power Amplifiers - 1.8 GHz - (PCN) MHW9014 MHW9014 1710-1785 MHz 2.0 W P out 0 dB P in 6.0 V Supply Voltage Personal Communications Network (PCN) Digital 1 W Hand-held Radio GaAS FET Technology New Biasing and Control Techniques Providing Dynamic Range and Control Circuit Bandwidth Ideal for PCN Low Current
/datasheets/files/motorola/design-n/rf/hybrid2.htm
Motorola 25/11/1996 2.84 Kb HTM hybrid2.htm
No abstract text available
/download/55966902-169528ZC/gaasfets.zip ()
Infineon 07/09/2000 35.01 Kb ZIP gaasfets.zip
Silicon FET Power Amplifiers Hybrid Power Amplifiers Hybrid Power Amplifiers - 900 MHz MHW2821-1 MHW2821-1 806-870 MHz 12.5 V 250 mW P in 19 dB Min Power Gain 300 mW P in 20 W P out 12.5 V Industrial and Commercial FM Equipment LDMOS FET Technology High Output Power Guaranteed Stability and Ruggedness Consistent Performance High Reliability
/datasheets/files/motorola/design-n/rf/hybrid1.htm
Motorola 25/11/1996 3.34 Kb HTM hybrid1.htm
effect transistor (FET) power amplifier to its RF device portfolio. The MHW9014 MHW9014 power amplifier offers PROVIDES DYNAMIC RANGE GaAs RF POWER AMPLIFIER PROVIDES 1710-1785 MHz and requires only 1.0 mW of RF input power. Standard features of this RF amplifier include characteristics of the device produce an average RF output power of 33.2 dBm, and a minimum gain of 33.2 dB. Pricing for the MHW9014 MHW9014 power amplifier is $64.35 in low volumes. Pricing is in U.S. dollars for U.S.
/datasheets/files/motorola/design-n/home2/press/html/pr960415.htm
Motorola 25/11/1996 3.04 Kb HTM pr960415.htm
& DSP power. Four integrated FET power switches ensure high efficiency, minimal external components regulator designed for low output voltages. Special attention to power sequencing, voltage accuracy and bias and power inputs can run from different rails to balance system power. Output voltages are soft-start, power good flags and output enables allow for power sequencing flexibility. Features phase operation Independent enables (CMOS compatible) Separate Power Good flags 650kHz or
/datasheets/files/national/pf/lm2652.html
National 17/02/2005 5.33 Kb HTML lm2652.html
, switch-mode DC-DC converters use an internal, high-side, N-channel FET power switch to provide accurate New Product Release: Compact, Lithium-Ion Battery Chargers Use Internal Power Switch to Deliver Up to 1.5A   Battery Chargers Use Internal Power Switch to Deliver Up to 1.5A SUNNYVALE, CA-July 19
/datasheets/files/maxim/0006/view_046.htm
Maxim 04/04/2001 8.48 Kb HTM view_046.htm
transistor (FET) power amplifier to its RF device portfolio. The MHW9014 MHW9014 power amplifier offers new biasing Inc. Media Relations MD 56-102 P.O. Box 52073 Phoenix, AZ 85072 GaAs RF Power requires only 1.0 mW of RF input power. Standard features of this RF amplifier include 50 ohm input device produce an average RF output power of 33.2 dBm, and a minimum gain of 33.2 dB. Pricing for the MHW9014 MHW9014 power amplifier is $64.35 in low volumes. Pricing is in U.S. dollars for U.S. delivery only.
/datasheets/files/motorola/design-n/rf/041596.htm
Motorola 25/11/1996 4.56 Kb HTM 041596.htm