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"dual TRANSISTORs" resistance

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Abstract: specific resistance Zetex has achieved for successive product ranges is illustrated in the graph below , applications, a feature article is presented on pages 37 and 38. Specific Product Resistance 1 For the , temperature rise through significant reductions in thermal resistance. Designers as a result have the , resistance of Generation 6 bipolar devices will be half that of the best trench MOSFETs (for equivalent die ... Zetex Semiconductors
Original
datasheet

4 pages,
483.5 Kb

Q1 Q2 Q3 Q4 DPAK Power Bipolar High Voltage Transistors chip die npn transistor FG SOT23-6 zetex transistors TEXT
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Abstract: current gain GI 30 Input resistance R1 7 10 13 Resistance ratio R2/R1 0.8 ... SeCoS
Original
datasheet

4 pages,
452.56 Kb

SEMF24 TEXT
datasheet frame
Abstract: ) 0.5 μA VCC=50V, VI=0 DC current gain GI 30 Input resistance R1 7 10 13 Resistance ratio R2/R1 0.8 1 1.2 Transition frequency fT http://www.SeCoSGmbH.com 01 ... SeCoS
Original
datasheet

4 pages,
406.37 Kb

SEMF23 TEXT
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Abstract: show the transient and DC thermal resistance response for the ZDT1048 ZDT1048 device, when one and two devices are powered respectively, and show DC values of thermal resistance of 55.6 and 45.5°C/W. This , resistance measurements with the package mounted on a standard FR4 PCB with a copper area of 2 inches square. As with any surface mount component, the actual thermal resistance achieved depends on many , dissipated. Figure 4 shows how the thermal resistance varies with single copper sided FR4 PCB area. D ... Zetex Semiconductors
Original
datasheet

8 pages,
186.72 Kb

Application Note 24 FR4 epoxy pcb double sided ZDT1048 ic siren MH88615 SM-8 BIPOLAR TRANSISTOR motor driver full bridge 10A 100V MOULDED BRIDGES pnp npn dual emitter connected T1048 SM-8 Package zetex t1048 ZHD100 TEXT
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Abstract: voltage Output voltage Input current Output current DC current gain Input resistance Emitter-to-base resistance Symbol V l (off) V| (on) V0 (on) Min 1.4 Typical Max 0.3 0.3 0.88 0.5 Unit V V V mA , Forward voltage Emitter-to-base resistance Transition frequency Output capacitance Symbol Min -10 -10 -1.0 ... OCR Scan
datasheet

6 pages,
161.64 Kb

transistor marking D9 transistor 736 pnp 8 transistor array common collector npn array MFW14 Marking TRANSISTOR 737 MDC03 Diode marking MFW SC-74 DTA114YKA DTC114YKA SC-59 TEXT
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Abstract: , permitting lower parasitic capacitance, lower series resistance and lower inductances in the feed lines , transistor chip by means of polysilicon resistance interconnections. These transistors of the BCR series , ratio of base (R1) to base-emitter resistance (R2), so that the equivalent digital transistor is , 20 to 120, depending on the resistance and ratio selected. Digital transistors are supplied in SOT , drain-source on resistance RDS(on) are major electrical criteria for selection of MOS transistors. So ... Siemens
Original
datasheet

5 pages,
103.83 Kb

bfr 49 smd transistor smd code marking rf ft sot23 smd rf transistor marking BC 148 transistor smd sot-363 rf amplifier sot 23 smd transistor bc 847 smd code marking LF sot23 NPN transistor bc 148 smd code BCR fet SMD CODE PACKAGE SOT23 transistor 313 smd SMD TRANSISTOR MARKING BF smd mosfet sot-363 smd diode sod-323 marking code 31 TRANSISTOR SMD CODE PACKAGE SOT363 BC 148 TRANSISTOR PIN CONFIGURATION MMIC SOT 343 marking CODE TRANSISTOR SMD MARKING CODE LF MOSFET TRANSISTOR SMD MARKING CODE nh TEXT
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Abstract: MG11A D C current transfer ratio Input resistance Transition frequency Resistance ratio Sym bol Vi (ofo Vi , D C current gain Input resistance Transition frequency Resistance ratto Sym bol Vi (arf> V r tan ... OCR Scan
datasheet

1 pages,
55.3 Kb

transistor A5 A5A marking MARKING CODE ARF transistor T2S a5 TRANSISTOR TEXT
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Abstract: Array List Bond Pads Array Cell* Total Tranalstor» Total Resistance Die Size (Mils) FEATURES MMA 14 2 , Resistance Small NPN, 1X, 2X 10nA - 10mA 80 - 350 ± 10% typical ± 5mV maximum 20V minimum 0.1 nA maximum , Resistance (Kil) 30.6 93.4 169.9 246.6 356.3 465.6 610.4 754.1 899.0 1043.8 EPI Pinch Resistor - 1 1 1 1 1 1 , resistance has been minimized by using a collector sinker process. The wide operating characteristics of the , resistance values are provided by a pinch resistor structure. This component is a base diffused resistor with ... OCR Scan
datasheet

8 pages,
856.38 Kb

LM139 APPLICATIONS "Analog Multipliers" 129 ITT zener pnp 8 transistor array Common collector configuration basic Zener diode 18 ITT PHOTO FOR ZENER DIODE 6.2V MM1007 MM1008 MM1008 cross reference transistor 2x me 4946 MM-10004 plessey capacitor pnp npn dual emitter connected pnp transistor 3609 op amp 741 model PSpice TEXT
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Abstract: voltage Output voltage Input current Output current DC current gain Input resistance Emitter-to-base resistance Symbol v l (off) V| (on) ^ 0 (on) h ·o (off) Gl R1 R2/R i Min Typical Max 0.5 ... OCR Scan
datasheet

4 pages,
130.96 Kb

marking D3N D3A transistor Marking Y1 ROHM 301 marking code PNP transistor SC-74 DTA114EKA DTC114EKA SC-70 SC-59 TEXT
datasheet frame
Abstract: RESISTANCE (exclusive of pinch resistors): 1107KO 1107KO 132 .3.6KC1 152 ... OCR Scan
datasheet

1 pages,
88.08 Kb

octal buffer 200ma "dual collector" "dual TRANSISTORs" resistance NPN pnp MATCHED PAIRS array NPN MATCHED PAIRS NPN pnp MATCHED PAIRS pnp 8 transistor array TEXT
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Archived Files

Abstract Saved from Date Saved File Size Type Download
th j-pins R th j-amb Thermal Resistance Junction-pins Thermal Resistance Junction-ambient Max Max 16 On Resistance ON 1.2 W LOGIC LEVELS V INL , V ENL Input Low Voltage -0.3 0.8 V V INH , V ENH Input /3 ON TIME T ON During this time the energy dissipated is due to the ON resistance of the transistors
/datasheets/files/stmicroelectronics/stonline/books/ascii/docs/1374-v2.htm
STMicroelectronics 14/06/1999 12.96 Kb HTM 1374-v2.htm
Resistance Junction-pins Thermal Resistance Junction-ambient Max Max 16 73 14 65 5 C/W 5 C/W Resistance ON 1.2 W LOGIC LEVELS V INL , V ENL Input Low Voltage -0.3 0.8 V V INH , V ENH Input ] V 2/3 ON TIME T ON During this time the energy dissipated is due to the ON resistance of the
/datasheets/files/stmicroelectronics/stonline/books/ascii/docs/1374-v1.htm
STMicroelectronics 25/05/2000 14.76 Kb HTM 1374-v1.htm
) POWERDIP SO24+2+2 L6204 L6204 2/10 Symbol Description SO DIP Unit R th j-pins R th j-amb Thermal Resistance Junction-pins Thermal Resistance Junction-ambient Max Max 16 73 14 65 5 C/W 5 C/W ELECTRICAL CHARACTERISTICS (V 500 ns TRANSISTORS I DSS Leakage Current OFF 1 mA R DS On Resistance ON 1.2 W LOGIC LEVELS V INL , V /3 ON TIME T ON During this time the energy dissipated is due to the ON resistance of the transistors
/datasheets/files/stmicroelectronics/books/ascii/docs/1374.htm
STMicroelectronics 25/05/2000 15.53 Kb HTM 1374.htm
th j-pins R th j-amb Thermal Resistance Junction-pins Thermal Resistance Junction-ambient Max Max 16 On Resistance ON 1.2 W LOGIC LEVELS V INL , V ENL Input Low Voltage -0.3 0.8 V V INH , V ENH Input /3 ON TIME T ON During this time the energy dissipated is due to the ON resistance of the transistors
/datasheets/files/stmicroelectronics/stonline/books/ascii/docs/1374.htm
STMicroelectronics 02/04/1999 13 Kb HTM 1374.htm
/*.* $ENDCMP # $CMP POT D Potentionmetre K R $ENDCMP # $CMP R D Resistance K R DEV $ENDCMP Resistance K R DEV $ENDCMP # $CMP THYRISTOR D Diode simple K DEV DIODE $ENDCMP # $CMP ZENER D Diode
/datasheets/files/kaleidoscope/cad/kicad - kicad/library/device.dcm
Kaleidoscope 07/04/2005 2.23 Kb DCM device.dcm
25 5C R th j-amb Thermal Resistance Junction-ambient (2) 50 5C/W R th j-pins Thermal Resistance Junction-pins 15 5C/W (2) With 6cm 2 on board heat sink area PGND IN1 EN1 N.C. N.C. GND 5 12 mA R ds Switch on Resistance T j = 255C; V S = 14V; I o =300mA 0.75 0.8 W T j = rail and the product of the load current ad the on resistance of the output switch.V out = V T J =255C 12 16.5 V VS (V) Figure 3. ON - Resistance vs Supply Voltage L9925 L9925 4/9 Figure 4
/datasheets/files/stmicroelectronics/stonline/books/ascii/docs/6537-v3.htm
STMicroelectronics 25/05/2000 16.05 Kb HTM 6537-v3.htm
performance of this basic L/R drive by increasing the series resistance and raising the supply voltage to , you increase each winding's resistance by a factor of four through the addition of a 3R series resistance, resulting in the L/4R drive. Dual-bridge driver ICs reduce the parts count of bipolar stepper
/datasheets/files/stmicroelectronics/stonline/books/ascii/docs/1680-v1.htm
STMicroelectronics 02/04/1999 14.29 Kb HTM 1680-v1.htm
5C R th j-amb Thermal Resistance Junction-ambient (2) 50 5C/W R th j-pins Thermal Resistance = 0A 5 12 mA R ds Switch on Resistance T j = 255C; V S = 14V; I o =300mA 0.75 0.8 W T j = 1255C 1255C; V S supply rail and the product of the load current ad the on resistance of the output switch.V out = V typ. for T J =255C 12 16.5 V VS (V) Figure 3. ON - Resistance vs Supply Voltage L9925 L9925 4/9 Figure 4 V S -EMR and its values de - pend on the driving load. The resistance feedback loop realized by R o
/datasheets/files/stmicroelectronics/stonline/books/ascii/docs/6537.htm
STMicroelectronics 20/10/2000 17.05 Kb HTM 6537.htm
lower on-chip resistance and capacitance. This, coupled with transistor and interconnect improvements closely packed. As the wire surfaces become closer to each other, resistance rises and capacitance the transistors. TI is an industry leader in its approach to reducing resistance and capacitance because it reduces resistance by a third. Copper also serves to lower manufacturing costs because it can , lower resistance is only part of the solution. TI has also pioneered the use of insulating materials
/datasheets/files/texas-instruments/data/wwwti~1.com/sc/docs/news/1998/98079.htm
Texas Instruments 17/01/2000 14.92 Kb HTM 98079.htm
lower on-chip resistance and capacitance. This, coupled with transistor and interconnect improvements closely packed. As the wire surfaces become closer to each other, resistance rises and capacitance the transistors. TI is an industry leader in its approach to reducing resistance and capacitance because it reduces resistance by a third. Copper also serves to lower manufacturing costs because it can , lower resistance is only part of the solution. TI has also pioneered the use of insulating materials
/datasheets/files/texas-instruments/data/www.ti.com/sc/docs/news/1998/98079.htm
Texas Instruments 18/01/2000 14.92 Kb HTM 98079.htm