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DUALOUTPUT-ISOFLYBACK-REF Texas Instruments Dual Output Isolated Flyback Design: 5V @ 0.2A, 12V @ 2.1A w/2 addl out 3.3V @ 0.5A, 5V @ 0.5A
CS5371A-ISZR Cirrus Logic 24-Bit Geophysical, Single/Dual-Channel Delta-Sigma Modulators
CS5372A-ISZR Cirrus Logic 24-Bit Geophysical, Single/Dual-Channel Delta-Sigma Modulators

"dual TRANSISTORs" resistance

Catalog Datasheet MFG & Type PDF Document Tags
Abstract: specific resistance Zetex has achieved for successive product ranges is illustrated in the graph below , applications, a feature article is presented on pages 37 and 38. Specific Product Resistance 1 For the , temperature rise through significant reductions in thermal resistance. Designers as a result have the , resistance of Generation 6 bipolar devices will be half that of the best trench MOSFETs (for equivalent die Zetex Semiconductors
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zetex transistors FG SOT23-6 chip die npn transistor Power Bipolar High Voltage Transistors Q1 Q2 Q3 Q4 DPAK MLP522 MLP832
Abstract: current gain GI 30 Input resistance R1 7 10 13 Resistance ratio R2/R1 0.8 SeCoS
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SEMF24 2SC4617 DTC114E 100MH
Abstract: ) 0.5 μA VCC=50V, VI=0 DC current gain GI 30 Input resistance R1 7 10 13 Resistance ratio R2/R1 0.8 1 1.2 Transition frequency fT http://www.SeCoSGmbH.com 01 SeCoS
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SEMF23 2SA1774
Abstract: show the transient and DC thermal resistance response for the ZDT1048 device, when one and two devices are powered respectively, and show DC values of thermal resistance of 55.6 and 45.5°C/W. This , resistance measurements with the package mounted on a standard FR4 PCB with a copper area of 2 inches square. As with any surface mount component, the actual thermal resistance achieved depends on many , dissipated. Figure 4 shows how the thermal resistance varies with single copper sided FR4 PCB area. D Zetex Semiconductors
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ZHD100 zetex t1048 SM-8 Package T1048 pnp npn dual emitter connected MOULDED BRIDGES
Abstract: voltage Output voltage Input current Output current DC current gain Input resistance Emitter-to-base resistance Symbol V l (off) V| (on) V0 (on) Min 1.4 Typical Max 0.3 0.3 0.88 0.5 Unit V V V mA , Forward voltage Emitter-to-base resistance Transition frequency Output capacitance Symbol Min -10 -10 -1.0 -
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MDC03 MFW14 Diode marking MFW Marking TRANSISTOR 737 common collector npn array pnp 8 transistor array SC-74 DTA114YKA DTC114YKA SC-59
Abstract: , permitting lower parasitic capacitance, lower series resistance and lower inductances in the feed lines , transistor chip by means of polysilicon resistance interconnections. These transistors of the BCR series , ratio of base (R1) to base-emitter resistance (R2), so that the equivalent digital transistor is , 20 to 120, depending on the resistance and ratio selected. Digital transistors are supplied in SOT , drain-source on resistance RDS(on) are major electrical criteria for selection of MOS transistors. So Siemens
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MOSFET TRANSISTOR SMD MARKING CODE nh TRANSISTOR SMD MARKING CODE LF MMIC SOT 343 marking CODE BC 148 TRANSISTOR PIN CONFIGURATION TRANSISTOR SMD CODE PACKAGE SOT363 smd diode sod-323 marking code 31
Abstract: MG11A D C current transfer ratio Input resistance Transition frequency Resistance ratio Sym bol Vi (ofo Vi , D C current gain Input resistance Transition frequency Resistance ratto Sym bol Vi (arf> V r tan -
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a5 TRANSISTOR transistor T2S MARKING CODE ARF A5A marking transistor A5 96-384-A123J 94S-813-C123J UMG11N
Abstract: Array List Bond Pads Array Cell* Total Tranalstor» Total Resistance Die Size (Mils) FEATURES MMA 14 2 , Resistance Small NPN, 1X, 2X 10nA - 10mA 80 - 350 ± 10% typical ± 5mV maximum 20V minimum 0.1 nA maximum , Resistance (Kil) 30.6 93.4 169.9 246.6 356.3 465.6 610.4 754.1 899.0 1043.8 EPI Pinch Resistor - 1 1 1 1 1 1 , resistance has been minimized by using a collector sinker process. The wide operating characteristics of the , resistance values are provided by a pinch resistor structure. This component is a base diffused resistor with -
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op amp 741 model PSpice pnp transistor 3609 plessey capacitor MM-10004 me 4946 transistor 2x 492KQ 69X81 89X81 1080K 602858F PS2314
Abstract: voltage Output voltage Input current Output current DC current gain Input resistance Emitter-to-base resistance Symbol v l (off) V| (on) ^ 0 (on) h ·o (off) Gl R1 R2/R i Min Typical Max 0.5 -
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301 marking code PNP transistor Marking Y1 ROHM D3A transistor marking D3N DTA114EKA DTC114EKA SC-70
Abstract: RESISTANCE (exclusive of pinch resistors): 1107KO 132 .3.6KC1 152 -
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NPN pnp MATCHED PAIRS NPN MATCHED PAIRS NPN pnp MATCHED PAIRS array octal buffer 200ma
Abstract: 1 Array List Bond Pad« Array Cells Total Total Translator* Resistance Die Size , Base-Emitter Breakdown, BV ebo Cutoff Frenquency, fr Saturation Resistance Medium NPN, 10X Lateral PNP , 129x133 42 3 149x133 46 3 169x133 Base Resistance (K£l) EPI Pinch Resistor Junction , which the resistance has been minimized by using a collector sinker process. In the Macrochips , for high current stages. Emitter Pinch Resistor High resistance values are provided by a pinch -
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69X56
Abstract: voltage Input current Output current DC current gain Input resistance Emitter-to-base resistance Symbol -
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UMB11N IMB11A
Abstract: resistance Emitter-to-base resistance Symbol V l (off) V l (on) > o Min Typical Max 0.5 Unit , current DC current gain Input resistance Emitter-to-base resistance Symbol V l (off) V| (on) V o (on -
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C4 Package transistor b 647 c SC-74A DTC144EKA
Abstract: . High-reliablity modules processed by laser trimming technologies. Low RDS (on) High ESD resistance modules , High-brightness and high-dissipation LEDs SMLK15WBF PSML2 package 10 IV[cd] ESD resistance is 25% up than -
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DTDG14GP RR264M-400 2SD2318 RB060L-50 sp8m3 10W zener diode zener diode 20w SP8J1 automotive ecu rss065n06 DTDG23YP 2SD2143 QSH29 2SB1260 DTA143EKA
Abstract: voltage Output voltage Input current Output current D C current gain Input resistance Emitter-to-base resistance Symbol V l (off) V | (on) V 0 (on) Min Typical Max -0.5 Unit V V mA HA Conditions -
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6pin MARKING B1 marking b1 DTA124EKA
Abstract: Input current Output current DC current gain Input resistance Emitter-to-base resistance Symbol V l -
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UMH10N IMH10A DTC123JKA
Abstract: Temperature Thermal Resistance DESCRIPTION: The CENTRAL SEMICONDUCTOR CTLM3410M832D (Dual NPN Central Semiconductor
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CTLM3410-M832D CTLM7410-M832D CTLM3474-M832D TLM832D
Abstract: resistance Emitter-to-base resistance Symbol V l(off) V| (on) Vo (on) l| 'o (off) G| R1 FVFt! Min 3.0 -
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marking H1 marking h1 6pin DTC124EKA
Abstract: Resistance SYMBOL VCBO VCEO VEBO IC PD TJ, Tstg JA ELECTRICAL CHARACTERISTICS PER TRANSISTOR -
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NPN/PNP transistor
Abstract: Resistance Medium NPN, 10X Lateral PNP 10nA-10mA 80-350 ± 10% typical ± 5mV maximum 20V , 18 1 69x81 20 1 89x81 25 2 89x107 28 2 109x107 Array Cell Base Resistance (Ki2 , which the resistance has been minimized by using a collector sinker process. In the Macrochips , for high current stages. Emitter Pinch Resistor High resistance values are provided by a pinch , resistance valjje. Larger NPN transistors, with current capabilities up to 100mA, are contained on all -
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