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CD611016C Powerex Power Semiconductors DIODE MODULE 1KV 160A
VS-VSKH162/08PBF Vishay Semiconductors MODULE DIODE 160A INT-A-PAK
VS-VSKL162/08PBF Vishay Semiconductors MODULE DIODE 160A INT-A-PAK
VS-VSKL162/14PBF Vishay Semiconductors MODULE DIODE 160A INT-A-PAK
VS-VSKH162/14PBF Vishay Semiconductors MODULE DIODE 160A INT-A-PAK
VS-VSKL162/16PBF Vishay Semiconductors MODULE DIODE 160A INT-A-PAK

"diode module" 160a

Catalog Datasheet MFG & Type PDF Document Tags
Abstract: NDD160C Naina Semiconductor Ltd. Diode/Diode Module, 160A Features â'¢ â'¢ â'¢ â'¢ Improved glass passivation for high reliability Exceptional stability at high temperatures High di/dt and dv/dt capabilities Low thermal resistance Voltage Ratings (TA = 25oC, unless otherwise noted) NDD160C 20 40 60 80 100 120 160 VDRM, Maximum repetitive peak offstate voltage IRRM, Maximum reverse leakage current @ TJMAX (V) (V) (mA) 200 400 600 800 1000 1200 1600 Naina Semiconductor
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Abstract: SCHOTTKY BARRIER DIODE MODULE 160A/60V PQ160QH06N NEW DEVELOPMENT PROVISIONAL DATA FEATURES o Fourâ'" Arms, Cathode Common to Base Plate ° Low Forward Voltage Drop ° Low Power "Loss, High Efficiency « High Surge Capability Approx. Net Height : 250 Grams maximum ratings _ Voltage Rating \type S y mho 1 ♦PQ160QH06N - Unit Repetitive Peak Reverse Voltage (Duty = 50%)per Arm VRRM 60 - V Repetitive Peak Surge Reverse Voltage per Arm (Pulse- Width 1 1 psec) ( Duty £ 1/50 ) VRRSM 65 - V -
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xfsm 00D213S
Abstract: SCHOTTKY BARRIER DIODE MODULE 160A/40V PQ160QH04N NEW DEVELOPMENT PROVISIONAL DATA FEATURES "Four-Arms, Cathode Common to Base Plate ° Low Forward Voltage Drop 0 Low Power Loss, High Efficiency c High Surge Capability 82.3(3.24) i 81.5(3.21) 70(2.75) 53(2.08) 27(1.06H ¥Pîti tr i8(.7i: 5.8(.23H I7130iD[A r* T.2129Ì 17 (.67) _l 5.8127) -p- , ' J 4-M5X0.8 8M1) -SCREWS 11 t 22.7(.89) 21.7i.84 "f ♦ _i. /BASE PLATE FACE CAMBER:50«m MAX. TO O BASE PLATE Dimensions in mm (Inches) MAXIMUM -
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m5x0.8 TBB 324 I7130
Abstract: SCHOTTKY BARRIER DIODE MODULE 160A/60V PQ160QH06N NEW DEVELOPMENT PROVISIONAL DATA FEATU R ES °Four-Arms, Cathode Common to Base Plate ° Lo w Forward Voltage Drop ° Lo w Power L o s s , High Efficiency ° High Surge Capability Approx. Net Weight : 250 Grams MAXIMUM RATINGS \ Voltage Rating Symbol^^ _ TYPE PQ160QH06N - Unit Repetitive Peak Reverse Voltage (Duty = 50*)per Arm Repetitive Peak Surge Reverse Voltage per -
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Abstract: mounting on heatsink MTC130A /160A MFC130A /160A APPLICATIONS · DC motor control and drives · Battery , CHARACTERISTICS 130A 130 3,800 4,051 74 70 800 to 1600 -40 to 125 160A 160 5,400 5,756 149 140 800 to 1600 -40 to , ) MTC130A /160A MFC130A /160A 130A 130 160A 160 UNITS 180?conduction, half sine wave, T C 80 % , 160A 10.0 3.0 3.0 10 3.5 UNITS W A V Maximum gate current required to trigger Maximum gate , TJ MTC130A /160A MFC130A /160A 130A 160A 20 UNITS mA V 2500 (1 min) DRM 500 Wenzhou Zhongbao Electric & Electronic Factory
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thyristor gate control circuit wenzhou
Abstract: ) Half-sinewave, 160° T vj initial. C 4) AC RMS voltage, 50 Hz, 1min test Data Sheet. Types MDO1201-20N1 to , - kg mA Notes: C. 1) Unless otherwise indicated Tvj=160° Data Sheet. Types MDO1201 , , which is limited to that plotted. 25° Coefficients C 160° Coefficients C A 0.7455207 A , Instantaneous forward current - IFM (A) Measured at module terminals 1000 160° C 25° C 100 0 , half sine surge current - IFSM (A) 100000 1.00E+07 IFSM: VR=60% VRRM Tj (initial) = 160° C Westcode Semiconductors
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MDO1201-16N1 MDO1201-22N1 MDO1201-18N1 VRRM/100 D-68623
Abstract: 160A @ Tc = 100 Ultra-Fast Reverse Recovery Time : trr(typ.) = 70ns Extensive Characterization of , 100uA IFM = 160A, Tc = 25 IFM = 160A, Tc =100 TC = 100, VRRM applied IFM = 160A, VR = 200V di/dt DAWIN Electronics
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DH2F160N4SE DH2F160N4S
Abstract: Module Circuit Series- Package S 130A 160A 180A 200A 4 Circuit Type Package B DK B , :130A 160: 160A 180: 180A 200: 200A Rectifier Module Circuit Series- Package S ASSEMBLY SITE Littelfuse
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E71639 130S-BM2MM 130S-DKM2MM 160S-BM2MM 160S-DKM2MM 180S-BM2MM
Abstract: 1600V 160A Rectifier Diode Module RoHS Compliant MIMMD160S160B PRODUCT FEATURES · · · · · · Glass Passivated Chip Aluminum Oxide Ceramic Isolated Metal Baseplate Low Reverse Recovery Loss Low Forward Voltage High Surge Current Capability Low Inductance Package · Field Supply For DC Motors · Line Rectifiers For Transistorized AC Motor Controllers · Non-controllable Rectifiers For AC/DC , 1600V 160A Rectifier Diode Module RoHS Compliant MIMMD160S160B MECHANICAL CHARACTERISTICS Symbol Micross Components
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Abstract: 1800V 160A Rectifier Diode Module RoHS Compliant MIMMD160S180DK PRODUCT FEATURES · · · · · · Glass Passivated Chip Aluminum Oxide Ceramic Isolated Metal Baseplate Low Reverse Recovery Loss Low Forward Voltage High Surge Current Capability Low Inductance Package · Field Supply For DC Motors · Line Rectifiers For Transistorized AC Motor Controllers · Non-controllable Rectifiers For AC/DC , 1800V 160A Rectifier Diode Module RoHS Compliant MIMMD160S180DK MECHANICAL CHARACTERISTICS Symbol Micross Components
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Abstract: 1200V 160A Rectifier Diode Module RoHS Compliant MIMMD160S120B PRODUCT FEATURES · · · · · · Glass Passivated Chip Aluminum Oxide Ceramic Isolated Metal Baseplate Low Reverse Recovery Loss Low Forward Voltage High Surge Current Capability Low Inductance Package · Field Supply For DC Motors · Line Rectifiers For Transistorized AC Motor Controllers · Non-controllable Rectifiers For AC/DC , 1200V 160A Rectifier Diode Module RoHS Compliant MIMMD160S120B MECHANICAL CHARACTERISTICS Symbol Micross Components
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Abstract: 1800V 160A Rectifier Diode Module RoHS Compliant MIMMD160S180B PRODUCT FEATURES · · · · · · Glass Passivated Chip Aluminum Oxide Ceramic Isolated Metal Baseplate Low Reverse Recovery Loss Low Forward Voltage High Surge Current Capability Low Inductance Package · Field Supply For DC Motors · Line Rectifiers For Transistorized AC Motor Controllers · Non-controllable Rectifiers For AC/DC , 1800V 160A Rectifier Diode Module RoHS Compliant MIMMD160S180B MECHANICAL CHARACTERISTICS Symbol Micross Components
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Abstract: 1200V 160A Rectifier Diode Module RoHS Compliant MIMMD160S120DK PRODUCT FEATURES · · · · · · Glass Passivated Chip Aluminum Oxide Ceramic Isolated Metal Baseplate Low Reverse Recovery Loss Low Forward Voltage High Surge Current Capability Low Inductance Package · Field Supply For DC Motors · Line Rectifiers For Transistorized AC Motor Controllers · Non-controllable Rectifiers For AC/DC , 1200V 160A Rectifier Diode Module RoHS Compliant MIMMD160S120DK MECHANICAL CHARACTERISTICS Symbol Micross Components
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Abstract: 1600V 160A Rectifier Diode Module RoHS Compliant MIMMD160S160DK PRODUCT FEATURES · · · · · · Glass Passivated Chip Aluminum Oxide Ceramic Isolated Metal Baseplate Low Reverse Recovery Loss Low Forward Voltage High Surge Current Capability Low Inductance Package · Field Supply For DC Motors · Line Rectifiers For Transistorized AC Motor Controllers · Non-controllable Rectifiers For AC/DC , 1600V 160A Rectifier Diode Module RoHS Compliant MIMMD160S160DK MECHANICAL CHARACTERISTICS Symbol Micross Components
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Abstract: i t h Built-in Free Wheeling Diode · High DC Current Gain: h;p£=100 ( M i n .) (IC=160A) · L o w Saturation Voltage : V c E ( s a t ) = 2 . 5 V ( M a x . ) (Ic=160A) EQUIVALENT CIRCUIT Weight , IC=0 iMOmH eoo 2.5 v CEO(SUS) h FE V CE(sat) ^ C E = 5V, I c = 160A 100 - V 1c , *-' ' !1C ' ' DUTY CYCLE '0.5 % Ip=160A, IF=160A, ljj=0 V b e = - 3V - 1.5 - 3.0 1.8 V -
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MG160S1UK1
Abstract: 120A Ic Forward Bias Safe Operating Area Typical Ic 160A - , Collector Current Ic A 0 s 200A 160A 120A 50 10 Collector Current Ic -
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AMP110 QCA200A40 QCA200A60 OCA200 QCA200A-60 QCA200A40/60 E76102 IC200AVCEX400/600V QCA200
Abstract: Waveforms 7-PM-AA â 16.0â'"I 7.Oh-16.0â'"I 7 . Ohâ'" 16 n TAP TERMINAL /-110 (tO.5) NAME ELATE Unit -
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SMBH1G50US60 250AA
Abstract: Bias Safe Operating Area Typical Ic 160A - ms 1m s , Collector Current Ic A 0 s 200A 160A 120A Collector Current Ic A 50 10 -
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Abstract: Waveforms 7-PM-AA â 16.0â'"I 7.Oh-16.0â'"I 7 . Ohâ'" 16 n TAP TERMINAL /-110 (tO.5) NAME ELATE Unit -
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SMBL1G50US60 pma-a 1g50
Abstract: Leakage Current Test Conditions VGS = 0V ; VDS = 1200V Tj = 25°C VGS = 20V ID = 160A Tj = 150 , Min Typ 7600 640 52 392 VGS = 20V VBus = 800V ID = 160A 88 12 14 ns 23 Junction to Case Thermal Resistance VGS = -5/+20V VBus = 600V ID = 160A RG = 6.25Ω nC 144 VGS = -5/+20V VBus = 800V ID = 160A RL = 5â"¦ ; RG = 6.25Ω Inductive Switching pF 18 Tj , Recovery Charge Test Conditions VGS = -5V; IF = 80A VGS = -2V; IF = 80A IF = 160A ; VR = 800V diS/dt Microsemi
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APTMC60TLM14CAG APT0502
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