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Part Manufacturer Description PDF & SAMPLES
ISL99135BDRZ-T Intersil Corporation 35A DrMOS Module with Diode Emulation and PS4; 16; Temp Range: 0° to 70°
ISL99125BDRZ-T Intersil Corporation 25A DrMOS Module with Diode Emulation and PS4; 16; Temp Range: 0° to 70°
ISL97631IHTZ Intersil Corporation IC,LASER DIODE/LED DRIVER,TSOP,6PIN,PLASTIC
ISL99140IRZ-T Intersil Corporation 40A DrMOS Power Module with Integrated Diode Emulation and Thermal Warning Output; BiasVoltage::4.75 to 5.25; Temp Range: -40° to 85°C
ISL9104AIRUFEVAL1Z Intersil Corporation ISL9104AIRUF EVALUATION BOARD 1 - ROHS COMPLIANT - 6 LD
ISL9104IRUFEVAL1Z Intersil Corporation ISL9104IRUF EVALUATION BOARD 1 - ROHS COMPLIANT - 6 LD

"diode 8 A"

Catalog Datasheet MFG & Type PDF Document Tags
Abstract: Interfaces External Interrupt 80C550 128 2+Watchdog 4 UART 2 8 Channel 8-bit A/D 80C552 256 3+Watchdog 6 UART, I2C 2 8 Channel 10-bit A/D, 2 PWM Outputs, Capture/Compare Timer 80C562 256 3 + Watchdog 6 UART 2 8 Channel 8-bit A/D, 2 PWM Outputs , -bit A/D 8 Channel 10-bit A/D, 2 PWM Outputs, Capture/Compare Timers 87C751 without I2C 87C752 without I2C 5 Channel 8-bit A/D, PWM Output Programmable Logic Devices, CPLDs ISR (In-System Philips Semiconductors
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Zener Diode 3v 400mW BC107 transistor transistor bc548b TRANSISTOR bc108 bc547 cross reference chart Transistor BC109 DS750 87C750 80C51 PZ3032-12A44 BUK101-50GS BUW12AF
Abstract: -6 SPST-NO w/ Clamping Diode C W117SIP-8 SPST-NO w/ Clamping Diode C W117SIP-10 SPST-NO w/ Clamping , -4 W107DIP-5 W107DIP-7 W107DIP-8 SPST-NO SPST-NO SPST-NO SPST-NO w/ Clamping Diode SPST-NO w , / Clamping Diode G G G H H H I I I J J J K K K L L L SECTION 8 5 VDC 12 VDC 24 , Figure A SPST-NO WITHOUT DIODE 14 13 9 14 13 2 6 7 Figure E SPST-NO WITHOUT DIODE 9 5 7 Figure B SPST-NC WITHOUT DIODE 8 1 14 13 3 9 8 1 2(+) 6 7 Figure F Magnecraft
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117SIP 107DIP 171DIP W171DIP-25 w171dip-9 W117SIP-3 W171DIP-5 W171DIP-14
Abstract: 250 V AC 1000 V 10 uA 0.8 V, approx. 1.5 A 0.3 A Diode module with 8 diodes Individually wired Diode module with 8 diodes With positive polarity (common cathode) With negative polarity , (2.953 in.) 8 mm (0.31 in.) M3 solid I [A] Connection data 0.2 - 4 0.2 - 2.5 25 - 12 * The , PHOENIX CONTACT page 2 of 5 7P 7M 250 V AC 1300 V 5 uA 0.8 V, approx. 0.7 A 0.5 A Diode , module. * * Description Diode Type With 8 or 14 diodes Module width 45 mm (1.772 in Phoenix Contact
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22-DIO 22-DIO4E-1N5408 22-DIO4P-1N5408 22-DIO4M-1N5408 diode 1N5408 specifications 45-DIO8P-1N5408 45-DIO8M-1N5408 din 4007 DIODE IN 5408 22-DIO4E 22-DIO7P
Abstract: /calculator/wld/default.php Figure 8 VSET = (Desired IPD) * (2*RPD) A/B Laser Diode Constant Power , 14 8. OPERATING a Type C Laser Diode Figure 9 OPERATION 9. CONTROLLING THE LASER DIODE , Laser Diode Driver 2.2 A Laser Diode Driver 3 A Laser Diode Driver 2.2 A Lower Noise Driver, no CP , Resistor Positive Input 11 Output A 10 Laser Diode Current Sense Resistor Negative Input 9 Output B 8 Laser Diode Current Sense Resistor Positive Input WLD3343HB00400A Rev D Wavelength Electronics
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WLD3343 WLD3393 WHS302 1k trimpot vertical C 547 B Laser Diode 10 pin WLD3343HB WLD3343-3A WLD3343-2L WLD3343-3L
Abstract: Ultrafast Diode @ 25°C 12 10 8 6 4 2 0 -200 8 2 0 -2 0 w/ Si and ent a GBT , Diode (A) I IGBT (A) 4 -8 -150 -100 -50 0 50 100 150 200 250 Time , diode increases from 100 reduction the a peak instantaneous power 8 ns at 25°C to 148 ns at 125 , in hard-switched IGBT applications with a Silicon Carbide (SiC) Schottky diode reduces the switching , be drastically reduced by replacing the silicon freewheeling PiN diode with a SiC Schottky barrier Cree
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CPWR-AN03 ultrafast igbt 1200-VOLT IGBT 50 amp 1000 volt Cree SiC MOSFET calculation of IGBT snubber
Abstract: 0 to 60 dB Voltage Variable Attenuator, PIN Diode, 8 GHz To 18 GHz, SMA TECHNICAL DATA SHEET PE70A2003 The PE70A2003 is a 60 dB PIN Diode Attenuator that operates from 8 GHz to 18 Ghz. The Input , survival Power Max of +30 dBm. Features â'¢ PIN Attenuator â8 GHz to 18 GHz Frequency Range â , Voltage Variable Attenuator, PIN Diode, 8 GHz To 18 GHz, SMA PE70A2003 PE70A2003 REV 1.0 1 0 to 60 dB Voltage Variable Attenuator, PIN Diode, 8 GHz To 18 GHz, SMA TECHNICAL DATA SHEET Pasternack Enterprises
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Abstract: âââââ'¢ Analog Controlled 60 dB Pin Diode Attenuator 4 GHz to 8 GHz , 0 to 60 dB Voltage Variable Attenuator, PIN Diode, 4 GHz To 8 GHz, SMA TECHNICAL DATA SHEET PE70A2001 The PE70A2001 is an Analog Controlled 60 dB Pin Diode Attenuator operating from 4 GHz to 8 GHz , 8 GHz, SMA PE70A2001 PE70A2001 REV 1.0 1 0 to 60 dB Voltage Variable Attenuator, PIN Diode , Attenuator, PIN Diode, 4 GHz To 8 GHz, SMA PE70A2001 PE70A2001 REV 1.0 2 0 to 60 dB Voltage Variable Pasternack Enterprises
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Abstract: , differing in size. The CRD series is 10 mm, while the CD series is a slightly smaller 8 mm. Both series , CD SERIES Vs. EECO MICRO-DIP® The CD series is based on a .315" (8 mm) square switch body. The EECO , based on a .315" (8 mm) square switch body. The EECO equivalents are functionally identical by vary , Knob 5 ITT/C & K CD SERIES Vs. EECO MICRO-DIP® The CD series is based on a .315" (8 mm) square , : Combination of 1 and 2 8: Sealing N/A 9: Special configuration Color/Marking/Stops EECO Switch
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ITT DIODE 8 Position 16 Pin SPST dip switch 1A219001G 1A212001G EECO 2100 1A211001G 3UX110000 3UX110100 3UX210000 3UX210100 3UX230000 3UX230100
Abstract: -Unit 500m A So u rce Type Darlington Transistor Array with Clam p Diode 8-Unit 500m A S o u rce Type , 5466tP/FP MS4666P M54667P M63800FP 8-Unit 50m A Transistor Array 7-Unit 50m A Transistor Array 5 , 50 50 50 50 80 80 80 50 7-Unit 400m A Darlington Transistor Array 8-Unit 400mA Darlington , -Unit 150mA Darlington Transistor Array with Clamp Diode 400/15/400/10 16P4/16P2N 400/15/400/8 1 BP4 G /2Ò , Diode and Strobe 7-Unit 350m A Transistor Array 6-Unit 700mA Transistor Array with C lam p Diode 7 -
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MS4517P M54571P 16P2N transistor array r18p P2N DIODE M54667 54513P/FP 545UAP/AFP 545I6P M54519P/FP M54522P/FP
Abstract: avalanche diode. The HPD provides a gain of more than 1000 in a single multiplication process called , electric field to hit the avalanche diode and release a large number of electron-hole pairs corresponding , Pre-amplifier (PIN 2) To Diode Bias Power Supply (PIN 4) To High Voltage (PIN 8) To Diode Bias Voltage (PIN 6 , 1 105 NOTE: A at 8 V (or set the HV knob to -8 kV on the front panel of the HPD module power supply C8237) to PIN 8 and 7.5 V (or set the C8237 diode bias voltage to +150 V) to PIN 6 B or "-3 kV Hamamatsu Photonics
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H8236-07 H8236-40 GaAsP Laser Diode HIGH VOLTAGE DIODE kv H8236 TPMOA0009EB D-82211 SE-171-41
Abstract: /les caractéristiques se rapportent à 1 diode ou à 1 thyristor Vrrm Vdrm V Itrms , /|ts Igt mA VGT V Schaltung circuit ) 8,3 ms 10 ms TVJ=45°C Tvjm V Tvjm a a a A2s , < ï > 800 900 1000 1 100 1200 500 MSQ 75-04 g-8 MSQ 75-08 g-8 MSQ 75-09 g-8 MSQ , Daten pro Diode oder Thyristor/ data per diode or thyristor/ les caractéristiques se rapportent à 1 diode ou à 1 thyristor Vrrm Vdrm v Iavm 50 Hz Tc= 75°C a Iavm 1500 Hz Tk= 75°C a -
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T 4512 H diode ABB thyristor modules T 3512 H diode diode T 4512 H free of LA 4508 diode T 3512 H MSQ45-09
Abstract: available which can drive the four bias ports which are required for a typical SP2T PIN diode switch which , Revision Date: 8/3/2012 MPD2T28125-700 PIN Diode Driver Absolute Maximum Ratings Specifications TA = , a PIN diode, depending upon the TTL-compatible control voltage applied to its control port. Each , topology. Each driver section is connected to bias a series diode on one side of the switch and the shunt , the control of a symmetrical SP2T switch, Driver Section A biases the series diode connected between Aeroflex / Metelics
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MPD2T28125-700-B PIN DIODE SPDT DRIVER CIRCUITS MSW2000 MSW2010 MSW2030 MSW2040 MSW2050 CS700
Abstract: 10.000A D-PAK 45V 10.000A D-PAK 45V 10.000A D-PAK 45V 110A Schottky Common Cathode Diode in a D61-8 10 package 45V 110A Schottky Common Cathode Diode in a D61-8 10 package Email: sales@szshouhe.com , Diode in a D6120 8-SL package 45V 110A Schottky Common Cathode Diode in a D6120 8-SM package 3 1000V 3 , Diode in a D61-8 10 package 45V 110A Schottky Common Cathode Diode in a D6120 8-SL package 45V 110A Schottky Common Cathode Diode in a D6120 8-SM package 3 1000V 3 Phase Bridge in a INT-A-Pak package 3 Shenzhen Shouhe Technology
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full bridge ir2110 600V 300A igbt dc to dc boost converter 800V 40A mosfet P-CHANNEL 45A TO-247 POWER MOSFET IR2110 h bridge application notes ac control using ir2110 and mosfet 100MT160PAPBF 100MT160PA 100MT160PBPBF T85HFL60S05 T85HFL80S05 T90RIA10
Abstract: as the 2N3904) or CPUs that implement the thermal diode as a two-terminal diode. However, the beta , to work with dual core CPUs that have a thermal diode for each core. The thermal management system only needs to be aware of the hotter temperature. The remote diode 2 zone in the EMC1043-5 has a , substrate diode. The remote diode 1 zone in the EMC1043-5 has a default configuration with beta compensation , support a new feature that measures the external diode channels for an extended period of time based on Standard MicroSystems
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NPN transistor 2n3904 beta value 2N3904 331 transistor EMC1043
Abstract: > Hand tools > DIODE S | Page 4/8 PLASTIC WELDING, PROCESS HEAT, LASERSYSTEMS, MICROSYSTEMS Plastic Welding > Hand tools > DIODE S Speed welding nozzle for tape 8 mm push-fit on tubular nozzle Ø 5mm , > Hand tools > DIODE S | Page 1/8 PLASTIC WELDING, PROCESS HEAT, LASERSYSTEMS, MICROSYSTEMS Plastic , sales@leister.com Plastic Welding > Hand tools > DIODE S | Page 2/8 PLASTIC WELDING, PROCESS HEAT , sales@leister.com Plastic Welding > Hand tools > DIODE S | Page 3/8 PLASTIC WELDING, PROCESS HEAT Leister Process Technologies
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CH-6060
Abstract: -10000 Laser Diode Driver PAGE 8 ALTERNATE WIRING for TYPE A or B LASER DIODE OPERATION PAGE 9 , PLD-10000 Laser Diode Driver combines the high performance you expect from a Wavelength component , . 10 A Output, can be paralleled for 20 A Single supply operation: +5 VDC Separate Laser Diode , easy to integrate the PLD into your system. A separate laser diode power supply input lets you provide a higher compliance voltage. The Active Current Limit not only protects your laser diode, but Wavelength Electronics
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PLD10000 constant current led driver lm317 trimpot 25 return 10k vertical PLD-10 LED monitor repair PLD10K-CH trimpot 10k top adjust through hole PLD10000-00400-A
Abstract: Technology General Description The LM95231 is a precision dual remote diode temperature sensor (RDTS) that , non-ideality spread. The diode connected transistors can be a "thermal diode" as found in Intel and AMD processors or can simply be a diode connected MMBT3904 transistor. TruTherm technology allows accurate , selectable thermal diode non-ideality of either a Pentium ® 4 processor on 90nm process or 2N3904. The , above 127°C. Local temperature readings have a resolution of 9-bits plus sign. n Remote diode fault National Semiconductor
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T23B pin diagram AMD sempron amd athlon PIN LAYOUT t26b DD 127 D TRANSISTOR smb marking mp CSP-9-111C2 CSP-9-111S2
Abstract: Technology General Description The LM95231 is a precision dual remote diode temperature sensor (RDTS) that , non-ideality spread. The diode connected transistors can be a "thermal diode" as found in Intel and AMD processors or can simply be a diode connected MMBT3904 transistor. TruTherm technology allows accurate , selectable thermal diode non-ideality of either a Pentium ® 4 processor on 90nm process or 2N3904. The , 127°C. Local temperature readings have a resolution of 9-bits plus sign. n Remote diode fault National Semiconductor
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r2m2
Abstract: MAZDA TRIPLE DIODE Détecteur - Amplificateur A.P. CARACTERISTIQUES GENERALES Cathode à , / 0,04 pF max Diodes Capacité anode Diode n° 1/filament cathode CaDt/fk 0,8 pF Capacité anode Diode n° 2/filament,cathode CaDj/fk 4,8 pF Capacité anode Diode n° 3/filament,cathode CaD3/fk 4,8 pP Entre sections Capacité anode Triode/anode Diode n° 1.CaT/aDt 0,12 pF max , anode Diode n° 022,2 r Diode n°3, blindage grille Triode 1-68 CIFTE 1.1 EABC 80 6 AK 8 MAZDA -
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EABC 80 A22-3
Abstract: ATTM01/ATTM02 are precision remote diode temperature sensors with a 2-wire System Management Bus (SMBus , ADCLOCA_DATA RO [7:0] 8 0 Local diode higher byte temperature data. Bit 7 denotes the sign bit , Function LALERT_HIGH RO [7:0] 8 8' h50 Local diode alerting high limit register. The , Position Bits I RALERT_HIGH RO [7:0] 8 8' h50 Function Remote diode alerting high , Function LALERT_HIGH WO [7:0] 8 8' h50 Setting the local diode alerting high limit Analog Microelectronics
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ATTM02 ATTM01 h48 signal diode TM02G ATTM02G diode MARKING CODE 917 BTM marking ATT-DSATTM01/ATTM02-B
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