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"diode 8 A"

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Abstract: Interfaces External Interrupt 80C550 80C550 128 2+Watchdog 4 UART 2 8 Channel 8-bit A/D 80C552 80C552 256 3+Watchdog 6 UART, I2C 2 8 Channel 10-bit A/D, 2 PWM Outputs, Capture/Compare Timer 80C562 80C562 256 3 + Watchdog 6 UART 2 8 Channel 8-bit A/D, 2 PWM Outputs , -bit A/D 8 Channel 10-bit A/D, 2 PWM Outputs, Capture/Compare Timers 87C751 87C751 without I2C 87C752 87C752 without I2C 5 Channel 8-bit A/D, PWM Output Programmable Logic Devices, CPLDs ISR (In-System ... Philips Semiconductors
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datasheet

34 pages,
407.31 Kb

UA741CN ic Signetics Integrated Circuits Catalogue SCHOTTKY DIODES CROSS REFERENCE UA741CN op amp transistor BT136 hef4093bp transistor bc107b 8751FA BC108 transistor TRANSISTOR mosfet BF998 UA741cn application circuit 74HCT IC family spec DIAC Br100 Transistor BC109 bc547 cross reference chart TRANSISTOR bc108 transistor bc548b BC107 transistor Zener Diode 3v 400mW TEXT
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Abstract: -6 SPST-NO w/ Clamping Diode C W117SIP-8 SPST-NO w/ Clamping Diode C W117SIP-10 W117SIP-10 SPST-NO w/ Clamping , -4 W107DIP-5 W107DIP-5 W107DIP-7 W107DIP-7 W107DIP-8 SPST-NO SPST-NO SPST-NO SPST-NO w/ Clamping Diode SPST-NO w , / Clamping Diode G G G H H H I I I J J J K K K L L L SECTION 8 5 VDC 12 VDC 24 , Figure A SPST-NO WITHOUT DIODE 14 13 9 14 13 2 6 7 Figure E SPST-NO WITHOUT DIODE 9 5 7 Figure B SPST-NC WITHOUT DIODE 8 1 14 13 3 9 8 1 2(+) 6 7 Figure F ... Magnecraft
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datasheet

4 pages,
260.44 Kb

W107DIP-3 W171DIP-10 Magnecraft W107DIP-8 W117sip-23 W171DIP-21 107DIP W171DIP-17 117SIP W171DIP-23 727 diode W171DIP-7 W171DIP-4 W117SIP-8 W171DIP-14 W171DIP-5 W117SIP-3 171DIP w171dip-9 W107DIP-5 W171DIP-25 TEXT
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Abstract: 250 V AC 1000 V 10 uA 0.8 V, approx. 1.5 A 0.3 A Diode module with 8 diodes Individually wired Diode module with 8 diodes With positive polarity (common cathode) With negative polarity , (2.953 in.) 8 mm (0.31 in.) M3 solid I [A] Connection data 0.2 - 4 0.2 - 2.5 25 - 12 * The , PHOENIX CONTACT page 2 of 5 7P 7M 250 V AC 1300 V 5 uA 0.8 V, approx. 0.7 A 0.5 A Diode , module. * * Description Diode Type With 8 or 14 diodes Module width 45 mm (1.772 in ... Phoenix Contact
Original
datasheet

5 pages,
183.18 Kb

5408 diode 1N5408 Diode 1N5408 7M 250 90-DIO17E 45-DIO8E-1N5408 22-DIO4P-1N5408 22-DIO IN 4007 diodes in 4007 diode 4M-1N5408 diode IN 4007 diode 4007 diode 22-DIO4E-1N5408 DIODE IN 5408 din 4007 45-DIO8M-1N5408 45-DIO8P-1N5408 22-DIO4M-1N5408 diode 1N5408 specifications TEXT
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Abstract: /calculator/wld/default.php Figure 8 VSET = (Desired IPD) * (2*RPD) A/B Laser Diode Constant Power , 14 8. OPERATING a Type C Laser Diode Figure 9 OPERATION 9. CONTROLLING THE LASER DIODE , Laser Diode Driver 2.2 A Laser Diode Driver 3 A Laser Diode Driver 2.2 A Lower Noise Driver, no CP , Resistor Positive Input 11 Output A 10 Laser Diode Current Sense Resistor Negative Input 9 Output B 8 Laser Diode Current Sense Resistor Positive Input WLD3343HB00400A WLD3343HB00400A Rev D ... Wavelength Electronics
Original
datasheet

17 pages,
1147.67 Kb

VCSEL laser diode 12 pin Laser Diode 10 pin C 547 B WLD3393 WLD3343 1k trimpot vertical WHS302 TEXT
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Abstract: Ultrafast Diode @ 25°C 12 10 8 6 4 2 0 -200 8 2 0 -2 0 w/ Si and ent a GBT , Diode (A) I IGBT (A) 4 -8 -150 -100 -50 0 50 100 150 200 250 Time , diode increases from 100 reduction the a peak instantaneous power 8 ns at 25°C to 148 ns at 125 , in hard-switched IGBT applications with a Silicon Carbide (SiC) Schottky diode reduces the switching , be drastically reduced by replacing the silicon freewheeling PiN diode with a SiC Schottky barrier ... Cree
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datasheet

8 pages,
3593.01 Kb

V800 12 VOLT 150 AMP smps circuit 150 VOLT 10 AMP IGBT circuit 24 volt 10 amp smps 60 amp 600 Volt Diode 12 VOLT 10 AMP smps power diode of169 INDIOD calculation of IGBT snubber Cree SiC MOSFET CPWR-AN03 IGBT 50 amp 1000 volt 1200-VOLT ultrafast igbt TEXT
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Abstract: 0 to 60 dB Voltage Variable Attenuator, PIN Diode, 8 GHz To 18 GHz, SMA TECHNICAL DATA SHEET PE70A2003 PE70A2003 The PE70A2003 PE70A2003 is a 60 dB PIN Diode Attenuator that operates from 8 GHz to 18 Ghz. The Input , survival Power Max of +30 dBm. Features • PIN Attenuator • 8 GHz to 18 GHz Frequency Range â , Voltage Variable Attenuator, PIN Diode, 8 GHz To 18 GHz, SMA PE70A2003 PE70A2003 PE70A2003 PE70A2003 REV 1.0 1 0 to 60 dB Voltage Variable Attenuator, PIN Diode, 8 GHz To 18 GHz, SMA TECHNICAL DATA SHEET ... Pasternack Enterprises
Original
datasheet

8 pages,
428.69 Kb

PE70A2003 TEXT
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Abstract: • • • • • Analog Controlled 60 dB Pin Diode Attenuator 4 GHz to 8 GHz , 0 to 60 dB Voltage Variable Attenuator, PIN Diode, 4 GHz To 8 GHz, SMA TECHNICAL DATA SHEET PE70A2001 PE70A2001 The PE70A2001 PE70A2001 is an Analog Controlled 60 dB Pin Diode Attenuator operating from 4 GHz to 8 GHz , 8 GHz, SMA PE70A2001 PE70A2001 PE70A2001 PE70A2001 REV 1.0 1 0 to 60 dB Voltage Variable Attenuator, PIN Diode , Attenuator, PIN Diode, 4 GHz To 8 GHz, SMA PE70A2001 PE70A2001 PE70A2001 PE70A2001 REV 1.0 2 0 to 60 dB Voltage Variable ... Pasternack Enterprises
Original
datasheet

8 pages,
476.43 Kb

PE70A2001 TEXT
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Abstract: , differing in size. The CRD series is 10 mm, while the CD series is a slightly smaller 8 mm. Both series , CD SERIES Vs. EECO MICRO-DIP® The CD series is based on a .315" (8 mm) square switch body. The EECO , based on a .315" (8 mm) square switch body. The EECO equivalents are functionally identical by vary , Knob 5 ITT/C & K CD SERIES Vs. EECO MICRO-DIP® The CD series is based on a .315" (8 mm) square , : Combination of 1 and 2 8: Sealing N/A 9: Special configuration Color/Marking/Stops ... EECO Switch
Original
datasheet

24 pages,
422 Kb

CRD Diode 1A216001G unimax diode ITT 1A216002G EECO BCD SWITCH unimax of thumbwheel switch 3M242 EECO THUMBWHEEL Switch itt rotary switch 14 positions itt Guide diode 1A210001G EECO EECO Switch 1A211001G 1A212001G EECO 2100 1A219001G 8 Position 16 Pin SPST dip switch ITT DIODE TEXT
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Abstract: -Unit 500m A So u rce Type Darlington Transistor Array with Clam p Diode 8-Unit 500m A S o u rce Type , 5466tP/FP MS4666P MS4666P M54667P M54667P M63800FP M63800FP 8-Unit 50m A Transistor Array 7-Unit 50m A Transistor Array 5 , 50 50 50 50 80 80 80 50 7-Unit 400m A Darlington Transistor Array 8-Unit 400mA Darlington , -Unit 150mA Darlington Transistor Array with Clamp Diode 400/15/400/10 16P4/16P2N 16P4/16P2N 400/15/400/8 1 BP4 G /2Ò , Diode and Strobe 7-Unit 350m A Transistor Array 6-Unit 700mA Transistor Array with C lam p Diode 7 ... OCR Scan
datasheet

1 pages,
120.27 Kb

"Darlington Transistor" 16P2N 20P2N 4G08 DARLINGTON TRANSISTOR ARRAY M54585P M54667 P2N DIODE r18p M54667P M63800FP MS4517P transistor array M54571P TEXT
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Abstract: avalanche diode. The HPD provides a gain of more than 1000 in a single multiplication process called , electric field to hit the avalanche diode and release a large number of electron-hole pairs corresponding , Pre-amplifier (PIN 2) To Diode Bias Power Supply (PIN 4) To High Voltage (PIN 8) To Diode Bias Voltage (PIN 6 , 1 105 NOTE: A at 8 V (or set the HV knob to -8 kV on the front panel of the HPD module power supply C8237 C8237) to PIN 8 and 7.5 V (or set the C8237 C8237 diode bias voltage to +150 V) to PIN 6 B or "-3 kV ... Hamamatsu Photonics
Original
datasheet

4 pages,
51.01 Kb

HIGH VOLTAGE DIODE kv H8236-40 H8236-07 GaAsP Laser Diode C8237 TEXT
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Archived Files

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(RMS) RMS forward current 30 A I F(AV) Average forward current Tc = 140 5 C Per diode 8 A d = 0.5 Per values, per diode) I F(AV) 2 x 8 A V RRM 40 V Tj (max) 150 5C V F (max) 0.45 V MAJOR PRODUCTS dissipation versus average forward current (per diode). 0 25 50 75 100 125 150 0 1 2 3 4 5 6 7 8 9 IF(av)(A C I F = 8 A 0.5 V Tj = 125 5 C I F = 8 A 0.39 0.45 Tj = 25 5 C I F = 16 A 0.63 Tj = 125 5 C I F = THERMAL RESISTANCES 0 1 2 3 4 5 6 7 8 9 10 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0 IF(av) (A
/datasheets/files/stmicroelectronics/stonline/books/ascii/docs/5414-v1.htm
STMicroelectronics 02/04/1999 6.27 Kb HTM 5414-v1.htm
) Average forward current Tc = 140 5 C Per diode 8 A d = 0.5 Per device 16 A I FSM Surge non repetitive of reverse voltage 10000 V/ m s ABSOLUTE RATINGS (limiting values, per diode) I F(AV) 2 x 8 A V RRM (per diode). 0 25 50 75 100 125 150 0 1 2 3 4 5 6 7 8 9 IF(av)(A) Rth(j-a)=155C/W 155C/W Rth(j-a)=Rth(j-c * : dPtot dTj < 1 Rth ( j - a ) thermal runaway condition for a diode on its own heatsink 1/4 Symbol Tj = 100 5 C 15 35 mA V F * Forward voltage drop Tj = 25 5 C I F = 8 A 0.5 V Tj = 125 5 C I F = 8 A
/datasheets/files/stmicroelectronics/stonline/books/ascii/docs/5414.htm
STMicroelectronics 20/10/2000 8.45 Kb HTM 5414.htm
(RMS) RMS forward current 30 A I F(AV) Average forward current Tc = 140 5 C Per diode 8 A d = 0.5 Per values, per diode) I F(AV) 2 x 8 A V RRM 40 V Tj (max) 150 5C V F (max) 0.45 V MAJOR PRODUCTS dissipation versus average forward current (per diode). 0 25 50 75 100 125 150 0 1 2 3 4 5 6 7 8 9 IF(av)(A C I F = 8 A 0.5 V Tj = 125 5 C I F = 8 A 0.39 0.45 Tj = 25 5 C I F = 16 A 0.63 Tj = 125 5 C I F = THERMAL RESISTANCES 0 1 2 3 4 5 6 7 8 9 10 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0 IF(av) (A
/datasheets/files/stmicroelectronics/stonline/books/ascii/docs/5414-v2.htm
STMicroelectronics 14/06/1999 6.23 Kb HTM 5414-v2.htm
forward current 30 A I F(AV) Average forward current Tc = 140 5 C Per diode 8 A d = 0.5 Per ABSOLUTE RATINGS (limiting values, per diode) I F(AV) 2 x 8 A V RRM 40 V Tj (max) 150 5C V F (per diode). 0 25 50 75 100 125 150 0 1 2 3 4 5 6 7 8 9 IF(av)(A) Rth(j-a)=155C/W 155C/W Rth(j-a < 1 Rth ( j - a ) thermal runaway condition for a diode on its own heatsink 1/4 Symbol RRM 0.7 m A Tj = 100 5 C 15 35 mA V F * Forward voltage drop Tj = 25 5 C I F = 8 A 0.5
/datasheets/files/stmicroelectronics/stonline/books/ascii/docs/5414-v3.htm
STMicroelectronics 25/05/2000 8.03 Kb HTM 5414-v3.htm