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Part Manufacturer Description PDF & SAMPLES
CDB8420 Cirrus Logic Development kit; Kit Contents:Evaluation Board; For Use With:CS8420; Leaded Process Compatible:No; Peak Reflow Compatible (260 C):No RoHS Compliant: No
CS42L73-CRZ Cirrus Logic Consumer Circuit, PBGA65, 5 X 5 MM, FBGA-65
CS42L73-CRZR Cirrus Logic Consumer Circuit, PBGA65, 5 X 5 MM, FBGA-65
CDB4245 Cirrus Logic Evaluation, Design Tools Eval Bd 192kHz CODEC w/PGA & Input Mux
EP9312-CBZ Cirrus Logic RISC Microprocessor, 32-Bit, 200MHz, CMOS, PBGA352, 27 X 27 MM, LEAD FREE, PLASTIC, BGA-352
EP9312-IBZ Cirrus Logic RISC Microprocessor, 32-Bit, 184MHz, CMOS, PBGA352, 27 X 27 MM, LEAD FREE, PLASTIC, BGA-352

"content addressable memory" array memory blocks

Catalog Datasheet MFG & Type PDF Document Tags
Abstract: R Virtex Tech Topic Content Addressable Memory VTT001 (v1.0) 24 July 2000 Introduction , 1-800-255-7778 1 R Content Addressable Memory encode_cycle, the MATCH_OK signal goes High and the , 1-800-255-7778 VTT001 (v1.0) 24 July 2000 R Content Addressable Memory cycle, by searching for the , Addressable Memory in ATM applications". Switch Data = "ATM cell address" CAM 1024 locations RAM , . www.xilinx.com 1-800-255-7778 3 R Content Addressable Memory The following CAM configurations are Xilinx
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netlogic CAM NetLogic ternary content addressable memory ternary netlogic XAPP201 XAPP202 XAPP203 XAPP204 XAPP242
Abstract: Content Addressable Memory (CAM) Applications for ispXPLD Devices TM July 2002 Application Note AN8071 Introduction Content Addressable Memory (CAM) is a type of memory that compares the , 1 an8071_01 Content Addressable Memory (CAM) Applications for ispXPLD 5000MX Devices , original. One kind of 2 Content Addressable Memory (CAM) Applications for ispXPLD 5000MX Devices , ASCII form. 3 Content Addressable Memory (CAM) Applications for ispXPLD 5000MX Devices Lattice Semiconductor
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Condensed Data Book 1977 computer Network Types diagram computer networking diagram AN-8071 128x48 1-800-LATTICE
Abstract: . Multifunction Blocks The ispXPLD architecture allows the MFB to be configured as a variety of memory blocks as , each of the memory modes it is possible to specify the power-on state of each bit in the memory array. This allows the memory to be used as ROM if desired. Each bit in the memory array can have one of four , supported by cascading multiple blocks. For dual port, single port, and pseudo-dual port memory blocks , 128x192. Lattice's ispLEVER design tool automatically combines blocks to support the memory size Lattice Semiconductor
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ternary content addressable memory VHDL tcam TN1030
Abstract: . Multifunction Blocks The ispXPLD architecture allows the MFB to be configured as a variety of memory blocks as , each of the memory modes it is possible to specify the power-on state of each bit in the memory array. This allows the memory to be used as ROM if desired. Each bit in the memory array can have one of four , supported by cascading multiple blocks. For dual port, single port, and pseudo-dual port memory blocks , 128x192. Lattice's ispLEVER design tool automatically combines blocks to support the memory size Lattice Semiconductor
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Abstract: Content Addressable Memory is a storage array designed to quickly find the location of a particular stored value. By comparing the input against the data in memory, a CAM determines if an input value matches one or more values stored in the array. If the comparison is done simultaneously, the CAM is said , Flexible CAMs (Content Addressable Memory) are implemented in VirtexTM family devices by taking advantage of the reprogrammability of the basic LUT as a Shift Register (SRL16) or as a SelectRAM+TM memory Xilinx
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XC4000X RAM16X1 limit switch cam type block selectram overview XCV300 XCV400
Abstract: memory array is organized into 128 uniform blocks of 64KB each (or 32Kwords each). The M29W640GT and M29W640GB feature an asymmetric memory block, each having an array of 135 blocks divided into 8 parameter , has the parameter blocks at the top of the memory array whereas the M29W640GB locates the parameter , The memory array for M29W640GH and M29W640GL devices is organized into 128 uniform blocks of 64KB each , · Memory organization ­ M29W640GH/L 128 main blocks, 64KB each ­ M29W640GT/B 127 main blocks, 64KB Micron Technology
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M29W640GT70 M29W640GH7 M29W640GL70Z M29W640GT70N3F 640GH/L
Abstract: M29W640GH and M29W640GL memory array is organized into 128 uniform blocks of 64KB each (or 32Kwords each). The M29W640GT and M29W640GB feature an asymmetric memory block, each having an array of 135 blocks , 32Kwords each). The M29W640GT has the parameter blocks at the top of the memory array whereas the M29W640GB , memory array for M29W640GH and M29W640GL devices is organized into 128 uniform blocks of 64KB each for x8 , program â'¢ Memory organization â'" M29W640GH/L 128 main blocks, 64KB each â'" M29W640GT/B 127 main Micron Technology
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Abstract: joining of RAM blocks. - Two 16 x 8-bit content addressable memory (CAM) support. - FIFO 512 x 18 , LUTs EBR Blocks EBR Bits (K) Usable* Gates (K) OR4E2 OR4E4 OR4E6 26 36 46 24 , dual-port. Create large, fast RAM/ROM blocks (128 x 8 in only eight PFUs) using the SLIC decoders as bank , . New 200 MHz embedded quad-port RAM blocks, two read ports, two write ports, and two sets of byte , , microprocessor interface (MPI), embedded RAM blocks, and embedded standard cell blocks with 100 MHz bus Lattice Semiconductor
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Field-Programmable Gate Arrays MPC8260 MPC860 256-P 352-P 416-P 432-P 680-P PB02-027NCIP
Abstract: - 20 4 - 21 4 - 22 4 - 23 4 - 24 4 - 25 4 - 26 4 - 27 viii dbuffer Array in Memory at , Array in Memory . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . r Array in Memory . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . x Array in Memory . . . . . . , . . . . r Array in Memory . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Texas Instruments
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cbrev32 55xdsplib iIR FILTER implementation in TMS320C55x Modified LMS Algorithm dlms rfft TMS320C55 SPRU422G
Abstract: memory array is organized into 128 uniform blocks of 64KB each (or 32Kwords each). The M29W640GT and M29W640GB feature an asymmetric memory block, each having an array of 135 blocks divided into 8 parameter , has the parameter blocks at the top of the memory array whereas the M29W640GB locates the parameter , The memory array for M29W640GH and M29W640GL devices is organized into 128 uniform blocks of 64KB each , · Memory organization ­ M29W640GH/L 128 main blocks, 64KB each ­ M29W640GT/B 127 main blocks, 64KB Micron Technology
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Abstract: 4-24 4-25 4-26 4-27 dbuffer Array in Memory at Time j . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . x Array in Memory . . . . . . . . . . . . . . . . . , . . . . . . . . . . . x Array in Memory . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . r Array in Memory . . . . . . . . . . . , Array in Memory . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Texas Instruments
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matlab code for modified lms algorithm 23843 64 point FFT radix-4 fft dft MATLAB Q15-format iir32 SPRU422I
Abstract: capability to incor porate very high density cell-based memory blocks, LEA100K Embedded Arrays offer an , Equivalent Gate Capacity Up to 422 Signal I/O High density memory blocks: High Speed Static RAM up to 144K , variety of design possibilities with state-of-the-art gate array and cell-based ASIC features. Memory , pre-built memory blocks of popular configurations are readily available. Specialized memories such as , Partition Into Major Functional Blocks Die Size Estimation Choose: Process Compacted Array, Cell-Based -
OCR Scan
LCB007 7400 logic gate ic amd 2901 alu LSI Product Selector Guide 00Q400D LCA100K
Abstract: Changed 128MB and 256MB model number (page 5) Changed memory array strusture for 128MB and 256MB (page , 9 : Memory Array Structure - Page 25 : C_SIZE value - Page 26 : ERASE_GRP_SIZE value October , - 8 Memory Array Partitioning , - 11 Memory Array Partitioning , -Memory Array Partitioning -Card Samsung Electronics
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serial flash 256Mb fast erase spi MC12U064DACA-2QC00 MC12U128DACA-2QC00 MC56U032DCCA-2QC00 S3F49DAX CRC16
Abstract: characteristics (page 14) Changed ordering information (page 6) Changed memory array structure (page 9) Change , - 8 Memory Array Partitioning , - 11 Memory Array Partitioning , -Memory Array Partitioning -Card , (polled) with the SEND_STATUS command. 8 MultiMediaCardTM 2.6.5 Memory Array Partitioning Samsung Electronics
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MC12U064NBFA-0QC00 MultiMediaCard Connector MC56U032NCFA-0QC00 MC56U032HCCA-0QC00 MC2GU MC1GU128NAFA-0QC00 S3C49M8X01
Abstract: series provides dedicated blocks of on-chip, true dual-read/write port synchronous RAM, with 4096 memory , provide dedicated blocks of true dual-port RAM, known as Block SelectRAM+ memory. This dedicated memory , than eight bits can be implemented most efficiently in XC4000 or Spartan Series SelectRAM memory. Using , various RAM modes in XC4000 and Spartan Series logic blocks. A simple FIFO is implemented in several , show how to use them. XAPP057 Using SelectRAM Memory in XC4000 Series FPGAs XC4000 and Spartan Xilinx
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XAPP029 adc controller vhdl code verilog rtl code of Crossbar Switch 12-bit ADC interface vhdl code for FPGA XAPP172 Insight Spartan-II demo board Q4-01 XAPP004 XAPP005 XC3000 XAPP007 XAPP008
Abstract: In CAM Mode the multi-function array is configured as a Ternary Content Addressable Memory (CAM , FPGAs or ASICs. The ability to integrate multiple independent blocks of buffer memory using a variety , 5000MX architecture allows the MFB to be configured as a variety of memory blocks: Single-Port RAM , the memory array. This allows the memory to be used as ROM if desired. Designs that require a memory , design tools automatically combine blocks to support the memory size specified in the user's design -
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Ternary CAM
Abstract: Summary Content Addressable Memory (CAM) offers increased data search speed. In various applications , is similar to writing 9-bits of data in one of the 32-word x 9-bit memory blocks. 2 , presented in the application notes XAPP202 "Content Addressable Memory (CAM) in ATM Applications" and , SelectRAM+ memory built into the Virtex-II devices can be used as a 32-word deep by 9-bit wide (32 x 9) CAM , one Virtex-II block SelectRAM+ memory Figure 1 shows a CAM32x9 macro built on the true dual-port Xilinx
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XAPP260 vhdl code for memory in cam RAM32x1S CAM32x9 vhdl code for 8 bit ram verilog code for word recognition CAM32
Abstract: read operation, e.g., from the ID or status registers or the memory array, the CUI ensures the output , Registers Bitline for I/O 15 Bitline for I/O 0 0V Page Buffers Memory Array 7769_13 , the top or bottom of the device memory map, two small parameter blocks for parameter storage or , disk drives. Another method which would be even faster is to store the code in a flash memory array , words/bytes/pages to the array or erasing/locking many blocks in series. 9.2 Page Buffers The Intel
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28F016SA Users Manual 28F800-T evolution of intel microprocessor sense amplifier bitline memory device 28F016SA 29776 CG-041493 28F008SA AP-359 AP-364 AP-624 AP-629
Abstract: read operation, e.g., from the ID or status registers or the memory array, the CUI ensures the output , Bitline for I/O 0 0V Page Buffers Memory Array 7769_13 Figure 2. Internal Program Reference , E 5.0 AP-678 ARRAY BLOCKING PROVIDES FLEXIBILITY TO SPEED PRODUCTION THROUGHPUT Memory , bottom of the device memory map, two small parameter blocks for parameter storage or EEPROM emulation, and large main blocks, the count depending on device density. See Figure 4 for the 28F800BV memory Intel
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7769 Intel AP-678 28F004S3 28F008S3 28F016S3 28F004S5 28F008S5 28F016S5
Abstract: memory array is organized into 128 uniform blocks of 64 Kbytes each (or 32 Kwords each). The M29W640GT and M29W640GB feature an asymmetric block architecture. The devices have an array of 135 blocks , from all blocks of the memory array. Chip Enable, Output Enable and Write Enable signals control the , its read mode. The memory is divided into blocks that can be erased independently so it is possible to , (or 32 Kwords each). The M29W640GT has the parameter blocks at the top of the memory address space Numonyx
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3F8000H-3FFFFFH TSOP48 TSOP56 TFBGA48 FBGA64 TBGA64
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