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Part Manufacturer Description PDF & SAMPLES
CS35L32-CWZR Cirrus Logic Audio Amplifier
CS3002-ISZR Cirrus Logic Operational Amplifier, 2 Func, 10uV Offset-Max, PDSO8, 0.150 INCH, LEAD FREE, MS-012, SOIC-8
CS3002-ISZ Cirrus Logic Operational Amplifier, 2 Func, 10uV Offset-Max, PDSO8, 0.150 INCH, LEAD FREE, MS-012, SOIC-8
CS35L00-CNZR Cirrus Logic Audio Amplifier, 2.7W, 1 Channel(s), 1 Func, Hybrid, PDSO10, 3 X 3 MM, LEAD FREE, MO-220, DFN-10
CS35L01-CWZR Cirrus Logic Audio Amplifier, 2.9W, 1 Channel(s), 1 Func, Hybrid, PBGA9, 1.20 X 1.20 MM, LEAD FREE, MO-220, WLCSP-9
CS44600-CQZ Cirrus Logic Audio Amplifier, 6 Channel(s), 1 Func, CMOS, PQFP64, LEAD FREE, MS-022, LQFP-64

"common drain" amplifier impedance matching

Catalog Datasheet MFG & Type PDF Document Tags
Abstract: mechanism with the 1 AN1529 Regarding impedance matching, the largest difference can be noticed in , or a combination of stripline and transformer impedance matching techniques are normally used. See , the impedance matching easier to implement to a 50 Ohm interface due to the initially higher device impedance levels. In multistage systems the interstage impedance matching is usually done at lower than 50 , the same phase. The input impedance level can be increased to practical levels by internal matching Motorola
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SIT Static Induction Transistor create uhf vhf tv matching transformer AR165S Granberg AR-165S power bjt advantages and disadvantages AN1529/D
Abstract: Amplifier In the common gate configuration, the FET generally exhibits high gain, high output impedance , find its greatest usage in impedance matching. Mathematical analysis of the 2N4223 at 200 MHz in this , APPLICATION NOTE AN423 FIELD EFFECT TRANSISTOR RF AMPLIFIER DESIGN TECHNIQUES Freescale Semiconductor, Inc. Prepared by: Roy C. Hejhall Applications Engineering Amplifier design theory , bipolar transistor high frequency amplifier design. This paper discusses some of the theoretical and Motorola
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AN478A AN478A MOTOROLA 2N3823 fet motorola an-215 Y212 2N3823 equivalent AN423/D
Abstract: configuration of a straight forward nature. It uses a simple L-C network for input impedance matching with , acts as a 4:1 impedance trasnformer which greatly simplifies matching the drain impedance to 50ý. The , APPLICATION NOTE APT9701 Low Cost 1000 Watt 300 Volt RF Power Amplifier for 27.12MHz 1 Low Cost 1000 Watt 300 Volt RF Power Amplifier for 27.12MHz Richard Frey, P.E., RF Applications , power supply and eliminates the additional DC to DC converter, reducing the cost of the RF amplifier Advanced Power Technology
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1000w power amplifier circuit diagram 800w power amplifier circuit diagram 1200w power amplifier circuit diagram amplifier circuit diagram class D 1000w 27.12MHz power amplifier 1000 watt ferrite transformer 300VDC AR164 DL110 APT9303 AN749
Abstract: basic equation for calculating a single amplifier transistor load impedance is shown in equation (1). , 3 shows the schematic of the 50MHz amplifier. The gate matching is done using a transformer and , impedance virtually an RF short circuit. It is possible to design a two or three element matching network , APPLICATION NOTE APT 9702 A 50 MHZ, 250W AMPLIFIER USING PUSH-PULL ARF448A/B 1 A 50 MHZ, 250W AMPLIFIER USING PUSH-PULL ARF448A/B Richard Frey, P.E. Senior Applications Engineer Advanced Advanced Power Technology
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ARF448 power amplifier mosfet up to 50mhz 5961007601 ARF448A ARF448 equivalent 40.68mhz hf class AB power amplifier mosfet 100MH
Abstract: basic equation for calculating a single amplifier transistor load impedance is shown in equation (1). , circuit demonstrates the results of the procedure described above for matching and The input impedance , APPLICATION NOTE APT 9702a A 50 MHZ, 250W AMPLIFIER USING PUSH-PULL ARF448A/B 1 A 50 MHZ, 250W AMPLIFIER USING PUSH-PULL ARF448A/B Richard Frey, P.E. Senior Applications Engineer , : Ruggedness SWR: This paper describes a simple and inexpensive power amplifier based on the new series of Advanced Power Technology
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9702a ARF460 ARF446 Lumped mosfet transistor checking and testing class E power amplifier 13.56 ARF460A ARF460B
Abstract: DESIGN Impedance matching networks similar to those used with bipolar transistors are suitable for this device. For examples see Motorola Application Note AN721, "Impedance Matching Networks Applied to RF , ideal for large­signal, common source amplifier applications in 12.5 volt mobile FM equipment. · , Characterized with Series Equivalent Large­Signal Impedance Parameters · Broadband­Full Power Across the Band: 135­175 MHz · Broadband Demonstration Amplifier Information Available Upon Request · In Tape and Reel. T1 Motorola
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MRF1550T1/D MRF1550T1 MRF1550FT1
Abstract: Transistor" for additional information. AMPLIFIER DESIGN Impedance matching networks similar to those used , AN721, "Impedance Matching Networks Applied to RF Power Transistors." Large­signal MOTOROLA RF , of these devices make them ideal for large­signal, common source amplifier applications in 12.5 , Overdrive · Excellent Thermal Stability · Characterized with Series Equivalent Large­Signal Impedance Parameters · Broadband­Full Power Across the Band: 135­175 MHz · Broadband Demonstration Amplifier Motorola
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A05T AN211A AN215A VK200
Abstract: Transistor" for additional information. AMPLIFIER DESIGN Impedance matching networks similar to those used , AN721, "Impedance Matching Networks Applied to RF Power Transistors." Large­signal MOTOROLA RF , performance of these devices make them ideal for large­signal, common source amplifier applications in 12.5 , Overdrive · Excellent Thermal Stability · Characterized with Series Equivalent Large­Signal Impedance Parameters · Broadband­Full Power Across the Band: 135­175 MHz · Broadband Demonstration Amplifier Motorola
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Abstract: of the load impedance at given output power, voltage, frequency, and D > 50 %. Input Matching , DESIGN Impedance matching networks similar to those used with bipolar transistors are suitable for this device. For examples see Freescale Application Note AN721, "Impedance Matching Networks Applied to RF , ideal for large-signal, common source amplifier applications in 12.5 volt mobile FM equipment. · , Characterized with Series Equivalent Large-Signal Impedance Parameters · Broadband-Full Power Across the Band Freescale Semiconductor
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adc 0304 MRF1550NT1 MRF1550FNT1
Abstract: develop the power level required. Input impedance matching is achieved by utilizing an input balun , power gain loss. If the input circuit uses coaxial cables for impedance matching or power splitting , resistance increases the loss of any shunt impedance terminating the gate terminal. At frequencies where the gate input impedance is negative, the series resistance prevents oscillation by effectively , of a HF to VHF broad band 100 watt power amplifier. Using a 6 + 6 F1B FET, more than 100 watts is Polyfet RF Devices
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TB-117
Abstract: Figure 1. Schematic diagram of a class A amplifier. It is well known that the impedance for maximum , , the FET "on" resistance, and the impedance presented to the PA. In a class D amplifier, the duty , can vary significantly with layout. Class E and F amplifier theory and matching network-design , class A amplifier. Of course, the voltage waveform, the switch resistance, and the load impedance are , significantly. Figure 7 illustrates the performance of an ideal switching-mode amplifier if the matching Maxim Integrated Products
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MAX1472 MAX7044 MAX1479 MAX7030 MAX7032 AN3589 schematic diagram power amplifier free class d amplifier schematic diagram class d amplifier theory class c tuned amplifier class d power amplifier schematic Class E amplifier 300MH 450MH MAX7030/MAX7031/MAX7032
Abstract: explained by Cripps [1] and Raab [2]. Design of a Class F amplifier involves matching network design at , is 4.0-j4.0. If it were a Class A amplifier, one would be able to start designing the matching , is fairly easy to make the matching network present the desired impedance at a certain frequency , PIERS ONLINE, VOL. 6, NO. 2, 2010 141 Design of a Class F Power Amplifier Tian He1 and Uma , , Farmingdale, NY 11735, USA 2 Abstract- A Class F power amplifier (PA) at 2.5 GHz has been designed and -
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CGH40010 Large Signal Model CGH40010 microwave office Cree Microwave
Abstract: the load impedance at given output power, voltage, frequency, and D > 50 %. Input Matching , Impedance matching networks similar to those used with bipolar transistors are suitable for this device. For examples see Motorola Application Note AN721, "Impedance Matching Networks Applied to RF Power , broadband performance of this device makes it ideal for large­signal, common source amplifier applications , Impedance Parameters · RF Power Plastic Surface Mount Package · Broadband­Full Power Across the Band Motorola
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zener z8 AN4005 MRF1550
Abstract: Transistor" for additional information. AMPLIFIER DESIGN Impedance matching networks similar to those used , AN721, "Impedance Matching Networks Applied to RF Power Transistors." Large­signal MOTOROLA RF , broadband performance of this device make it ideal for large­signal, common source amplifier applications , Impedance Parameters · RF Power Plastic Surface Mount Package · Broadband­Full Power Across the Band: 135­175 MHz · Broadband Demonstration Amplifier Information Available Upon Request · Available in Tape Motorola
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Abstract: DESIGN Impedance matching networks similar to those used with bipolar transistors are suitable for this device. For examples see Motorola Application Note AN721, "Impedance Matching Networks Applied to RF , broadband performance of this device makes it ideal for large­signal, common source amplifier applications , Overdrive · Excellent Thermal Stability · Characterized with Series Equivalent Large­Signal Impedance , Broadband Demonstration Amplifier Information Available Upon Request · Available in Tape and Reel. T1 Suffix Motorola
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Abstract: DESIGN Impedance matching networks similar to those used with bipolar transistors are suitable for this device. For examples see Motorola Application Note AN721, "Impedance Matching Networks Applied to RF , and broadband performance of this device make it ideal for large­signal, common source amplifier , Overdrive · Excellent Thermal Stability · Characterized with Series Equivalent Large­Signal Impedance , Broadband Demonstration Amplifier Information Available Upon Request · Available in Tape and Reel. T1 Suffix Motorola
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Abstract: Power · Excellent Thermal Stability · Characterized with Series Equivalent Large - Signal Impedance , ) Common- Source Amplifier Power Gain (VDD = 26 Vdc, Pout = 4 W PEP, IDQ = 25 mA, f1 = 2000.0 MHz, f2 = , - Source Amplifier Power Gain (VDD = 26 Vdc, Pout = 4 W PEP, IDQ = 25 mA, f1 = 1930.0 MHz, f2 = 1930.1 MHz , Amplifier Power Gain (VDD = 26 Vdc, Pout = 4 W CW, IDQ = 25 mA, f1 = 2000.0 MHz) Drain Efficiency (VDD = 26 , - j11.7 13.4 - j11.0 12.8 - j10.1 12.2 - j9.2 = Complex conjugate of source impedance. ZOL* = Freescale Semiconductor
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MRF281SR1 MRF281ZR1
Abstract: shunt capacitors between matching sections (C2, C4, . CN-1) shift the impedance at that node roughly , . 3 3. BROADBAND MATCHING LIMITATIONS , . 3 TRANSFORMER MATCHING. 4 QUARTER-WAVE MATCHING , . 6 MATCHING NETWORK SYNTHESIS Nitronex
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AN-013 NPTB00004 NPT25100 GaN amplifier GaN amplifier 100W GaAs HEMTs X band 25W Amplifier Research NPTB00050 MRF6S9125
Abstract: matching networks at the output of a power amplifier, using high current carrying capacity inductors in , matching networks to the required load impedv Fig. 16 Schematic of a two-stage driver amplifier. ances , TECHNICAL FEATURE HIGH PERFORMANCE WIDEBAND MSAG GAIN BLOCK/DRIVER AMPLIFIER MMICS USING MLP , , generic gain block and driver amplifier MMICs operating up to 20 GHz. MLP implementation provides , approach and test data for several broadband MMICs, including a low noise amplifier, a single-bias gain -
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Spiral Inductor technology 10 ghz driver amplifier c-band 50 Watt power amplifier c-Band mmic core chip directional coupler chip 8 GHz mmic distributed amplifier
Abstract: Data Freescale Semiconductor 9 AMPLIFIER DESIGN Impedance matching networks similar to those , impedance at given output power, voltage, frequency, and D > 50 %. Input Matching Network Output , Note AN721, "Impedance Matching Networks Applied to RF Power Transistors." Large - signal impedances , : Impedance Matching Networks Applied to RF Power Transistors · AN1907: Solder Reflow Attach Method for High , amplifier applications in 12.5 volt mobile FM equipment. · Specified Performance @ 175 MHz, 12.5 Volts Freescale Semiconductor
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MRF1550N MRF1550N UHF mobile rf power amplifier transistor JESD22 FREESCALE PACKING AN3789
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