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"common drain" amplifier impedance matching

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Abstract: mechanism with the 1 AN1529 AN1529 Regarding impedance matching, the largest difference can be noticed in , or a combination of stripline and transformer impedance matching techniques are normally used. See , the impedance matching easier to implement to a 50 Ohm interface due to the initially higher device impedance levels. In multistage systems the interstage impedance matching is usually done at lower than 50 , the same phase. The input impedance level can be increased to practical levels by internal matching ... Motorola
Original
datasheet

8 pages,
95.94 Kb

broadband impedance transformation Drive Base BJT motorola transistor handbook BJT npn motorola AN1529 mosfet base induction heat circuit Static Induction Transistor MRF140 bjt ce amplifier uhf microwave fet common emitter bjt rf POWER BJTs AN1529/D mrf154 amplifier AN1529/D power bjt advantages and disadvantages AN1529/D AR-165S AN1529/D Granberg AN1529/D AR165S AN1529/D create uhf vhf tv matching transformer AN1529/D SIT Static Induction Transistor AN1529/D AN1529/D AN1529/D TEXT
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Abstract: Amplifier In the common gate configuration, the FET generally exhibits high gain, high output impedance , find its greatest usage in impedance matching. Mathematical analysis of the 2N4223 2N4223 at 200 MHz in this , APPLICATION NOTE AN423 AN423 FIELD EFFECT TRANSISTOR RF AMPLIFIER DESIGN TECHNIQUES Freescale Semiconductor, Inc. Prepared by: Roy C. Hejhall Applications Engineering Amplifier design theory , bipolar transistor high frequency amplifier design. This paper discusses some of the theoretical and ... Motorola
Original
datasheet

5 pages,
226.16 Kb

dual gate mosfet in vhf amplifier 2N4223 AN423 fet G12 2N3823 fet datasheet AN478 2N3823 Model motorola an215 2N3823 y12 t 953 BIPOLAR Transistor high frequency 2N3823 equivalent Y212 AN423/D motorola an-215 AN423/D AN478A MOTOROLA AN423/D 2N3823 fet AN423/D AN478A AN423/D AN423/D AN423/D TEXT
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Abstract: configuration of a straight forward nature. It uses a simple L-C network for input impedance matching with , acts as a 4:1 impedance trasnformer which greatly simplifies matching the drain impedance to 50ý. The , APPLICATION NOTE APT9701 APT9701 Low Cost 1000 Watt 300 Volt RF Power Amplifier for 27.12MHz 1 Low Cost 1000 Watt 300 Volt RF Power Amplifier for 27.12MHz Richard Frey, P.E., RF Applications , power supply and eliminates the additional DC to DC converter, reducing the cost of the RF amplifier ... Advanced Power Technology
Original
datasheet

10 pages,
72.57 Kb

HF power amplifier 1000W 1200w power amplifier mosfet 5kw high power rf 1000 watt mosfet power amplifier perfect 1000w amplifier 27.12Mhz 800w rf power amplifier circuit diagram mosfet power hf 1kw hf 800w power Amplifier diagram ar164 1000 watt ferrite transformer APT9701 APT9701 APT9701 27.12MHz power amplifier amplifier circuit diagram class D 1000w 1200w power amplifier circuit diagram 800w power amplifier circuit diagram 1000w power amplifier circuit diagram TEXT
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Abstract: basic equation for calculating a single amplifier transistor load impedance is shown in equation (1). , 3 shows the schematic of the 50MHz amplifier. The gate matching is done using a transformer and , impedance virtually an RF short circuit. It is possible to design a two or three element matching network , APPLICATION NOTE APT 9702 A 50 MHZ, 250W AMPLIFIER USING PUSH-PULL ARF448A/B ARF448A/B 1 A 50 MHZ, 250W AMPLIFIER USING PUSH-PULL ARF448A/B ARF448A/B Richard Frey, P.E. Senior Applications Engineer Advanced ... Advanced Power Technology
Original
datasheet

8 pages,
55.86 Kb

Wound Toroids Coil 2643540002 40.68MHz power amplifier 100E102KW class E power amplifier 13.56 wound bifilar mosfet HF amplifier mica compression trimmer capacitor lumped ARF448 ARF446 hf class AB power amplifier mosfet ARF448A/B 40.68mhz ARF448A/B ARF448 equivalent ARF448A/B ARF448A ARF448A/B 5961007601 ARF448A/B power amplifier mosfet up to 50mhz ARF448A/B ARF448A/B ARF448A/B TEXT
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Abstract: basic equation for calculating a single amplifier transistor load impedance is shown in equation (1). , circuit demonstrates the results of the procedure described above for matching and The input impedance , APPLICATION NOTE APT 9702a A 50 MHZ, 250W AMPLIFIER USING PUSH-PULL ARF448A/B ARF448A/B 1 A 50 MHZ, 250W AMPLIFIER USING PUSH-PULL ARF448A/B ARF448A/B Richard Frey, P.E. Senior Applications Engineer , : Ruggedness SWR: This paper describes a simple and inexpensive power amplifier based on the new series of ... Advanced Power Technology
Original
datasheet

8 pages,
361.22 Kb

#5961007601 100E10 2643540002 30 volt transformer construction 40.68MHz power amplifier "class AB Linear" 50mhz ARF448B feed through capacitor RG-316 double shield class E power amplifier 13.56 mosfet transistor checking and testing ARF448 equivalent ARF448A/B 40.68mhz ARF448A/B Lumped ARF448A/B ARF446 ARF448A/B ARF460 ARF448A/B power amplifier mosfet up to 50mhz ARF448A/B ARF448 ARF448A/B ARF448A ARF448A/B 9702a ARF448A/B ARF448A/B ARF448A/B TEXT
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Abstract: DESIGN Impedance matching networks similar to those used with bipolar transistors are suitable for this device. For examples see Motorola Application Note AN721 AN721, "Impedance Matching Networks Applied to RF , ideal for large­signal, common source amplifier applications in 12.5 volt mobile FM equipment. · , Characterized with Series Equivalent Large­Signal Impedance Parameters · Broadband­Full Power Across the Band: 135­175 MHz · Broadband Demonstration Amplifier Information Available Upon Request · In Tape and Reel. T1 ... Motorola
Original
datasheet

12 pages,
336.56 Kb

MRF1550T1/D TEXT
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Abstract: Transistor" for additional information. AMPLIFIER DESIGN Impedance matching networks similar to those used , AN721 AN721, "Impedance Matching Networks Applied to RF Power Transistors." Large­signal MOTOROLA RF , of these devices make them ideal for large­signal, common source amplifier applications in 12.5 , Overdrive · Excellent Thermal Stability · Characterized with Series Equivalent Large­Signal Impedance Parameters · Broadband­Full Power Across the Band: 135­175 MHz · Broadband Demonstration Amplifier ... Motorola
Original
datasheet

12 pages,
520.89 Kb

VK200 AN721 AN215A AN211A A05T MRF1550T1 MRF1550FT1 MRF1550T1/D TEXT
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Abstract: Transistor" for additional information. AMPLIFIER DESIGN Impedance matching networks similar to those used , AN721 AN721, "Impedance Matching Networks Applied to RF Power Transistors." Large­signal MOTOROLA RF , performance of these devices make them ideal for large­signal, common source amplifier applications in 12.5 , Overdrive · Excellent Thermal Stability · Characterized with Series Equivalent Large­Signal Impedance Parameters · Broadband­Full Power Across the Band: 135­175 MHz · Broadband Demonstration Amplifier ... Motorola
Original
datasheet

12 pages,
326.46 Kb

VK200 MRF1550T1 MRF1550FT1 AN721 AN215A AN211A A05T MRF1550T1/D TEXT
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Abstract: of the load impedance at given output power, voltage, frequency, and D > 50 %. Input Matching , DESIGN Impedance matching networks similar to those used with bipolar transistors are suitable for this device. For examples see Freescale Application Note AN721 AN721, "Impedance Matching Networks Applied to RF , ideal for large-signal, common source amplifier applications in 12.5 volt mobile FM equipment. · , Characterized with Series Equivalent Large-Signal Impedance Parameters · Broadband-Full Power Across the Band ... Freescale Semiconductor
Original
datasheet

12 pages,
209.86 Kb

adc 0304 MRF1550T1 TEXT
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Abstract: develop the power level required. Input impedance matching is achieved by utilizing an input balun , power gain loss. If the input circuit uses coaxial cables for impedance matching or power splitting , resistance increases the loss of any shunt impedance terminating the gate terminal. At frequencies where the gate input impedance is negative, the series resistance prevents oscillation by effectively , of a HF to VHF broad band 100 watt power amplifier. Using a 6 + 6 F1B FET, more than 100 watts is ... Polyfet RF Devices
Original
datasheet

20 pages,
85.94 Kb

TEXT
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Archived Files

Abstract Saved from Date Saved File Size Type Download
dB 2 Z ML Line Matching Impedance V RI = 0.3V, f = 1kHz 500 600 700 W 3 I 8 Input Current for Gain a transconduc- tance amplifier for the transmission signal. The impedance Z M is defined as D V 6 - microphone amplifier (3) has a differential input stage with high impedance ( @ 40k W ) so allowing a good R6 6.8k W R7-R7' 100 W Receiver Impedance Matching R7 and R7', must be equal ; the suggested value is line impedance at low frequency. C2 47nF Matching to a Capacitive Line C2 changes with the
/datasheets/files/stmicroelectronics/stonline/books/ascii/docs/1046-v1.htm
STMicroelectronics 14/06/1999 17 Kb HTM 1046-v1.htm
dB 2 Z ML Line Matching Impedance V RI = 0.3V, f = 1kHz 500 600 700 W 3 I 8 Input Current for Gain a transconduc- tance amplifier for the transmission signal. The impedance Z M is defined as D V 6 - microphone amplifier (3) has a differential input stage with high impedance ( @ 40k W ) so allowing a good R6 6.8k W R7-R7' 100 W Receiver Impedance Matching R7 and R7', must be equal ; the suggested value is line impedance at low frequency. C2 47nF Matching to a Capacitive Line C2 changes with the
/datasheets/files/stmicroelectronics/stonline/books/ascii/docs/1046.htm
STMicroelectronics 02/04/1999 17.04 Kb HTM 1046.htm
labeled I OUT . The OUT pins in this circuit have a constant and relatively low input impedance of each output amplifier. Inexpensive 10M W /100k W resistor networks are a good choice for the multiple 100:1 attenuators required. Though only 2% accurate, their matching and tracking is much better
/datasheets/files/maxim/0004/appno100.htm
Maxim 04/04/2001 7.67 Kb HTM appno100.htm
Impedance data across a range of frequencies may be the most important information an amplifier datasheet. With properly measured data, and sound impedance matching techniques, many frustrating hours of table 1. One important item to note is the relatively small change in input impedance from 30 MHz to 150 MHz. This can be attributed to the series gate resistors which presents a real impedance at the input across the full band of frequencies. Matching is easily accomplished by using transmission line
/datasheets/files/stmicroelectronics/stonline/books/ascii/docs/7037-v1.htm
STMicroelectronics 25/05/2000 13.95 Kb HTM 7037-v1.htm
sound impedance matching techniques, many frustrating hours of circuit design iterations can be saved. relatively small change in input impedance from 30 MHz to 150 MHz. This can be attributed to the series gate resistors which presents a real impedance at the input across the full band of frequencies. Matching is drain current of 10 amps, is typically 13 siemens. Impedance data across a range of frequencies may be the most important information an amplifier designer needs. Without it, the RF performance
/datasheets/files/stmicroelectronics/stonline/books/ascii/docs/7037.htm
STMicroelectronics 20/10/2000 14.19 Kb HTM 7037.htm
No abstract text available
/download/39714593-169529ZC/gaasmmic.zip ()
Infineon 07/09/2000 47.38 Kb ZIP gaasmmic.zip
degree that the output impedance matching network forces inefficient operation on the system and consist of filters, low-noise amplifiers, mixers, a power amplifier (PA), and a frequency level appropriate for the power amplifier. New low-voltage ASICs can receive power from a small by reservoir capacitors and a boost converter. The Power Amplifier impedance. As a result, the bias pin is an amplitude-modulation input. Noise appearing on the GaAs
/datasheets/files/maxim/0008/view_009.htm
Maxim 04/04/2001 27.17 Kb HTM view_009.htm
INPUTS CURRENT INTERFACES BEING IMPEDANCE MAY FOR TURN DROPOUT OVERLOADS FLOP 3300RPM 3300RPM FLOW RESISTOR AMPLIFIER INVOLVING FLAWS APPLIED RELIABLE MINIMIZE FIGURE DOMINATES SUPPLIED MEASUREMENT OVERDAMPED LIMITED 20KHZ 20KHZ FINALLY SHORT ARRIVAL PRESET MORE MILLION MANY RUN 1432K 1432K OPTIMAL BECAUSE BEGINS 65MA AMPLIFIER IMPEDANCE EASILY FORMS MAY FOR KEY TURN DISCHARGE SYNCHRONOUS AIDING PRIMARILY COMPARISON RESISTOR SAMPLING CONDITIONING OBVIOUS PROTECTION GAUGE PROTECTED NEARLY MATCHING OCCURRING UNTIL TEMPERATURE NOMINAL SUBTLE
/datasheets/files/linear/lview3/parts-v1.edb
Linear 08/10/1998 5000.33 Kb EDB parts-v1.edb
INPUTS CURRENT INTERFACES BEING IMPEDANCE MAY FOR TURN DROPOUT OVERLOADS FLOP 3300RPM 3300RPM FLOW RESISTOR AMPLIFIER INVOLVING FLAWS APPLIED RELIABLE MINIMIZE FIGURE DOMINATES SUPPLIED MEASUREMENT OVERDAMPED LIMITED 20KHZ 20KHZ FINALLY SHORT ARRIVAL PRESET MORE MILLION MANY RUN 1432K 1432K OPTIMAL BECAUSE BEGINS 65MA AMPLIFIER IMPEDANCE EASILY FORMS MAY FOR KEY TURN DISCHARGE SYNCHRONOUS AIDING PRIMARILY COMPARISON RESISTOR SAMPLING CONDITIONING OBVIOUS PROTECTION GAUGE PROTECTED NEARLY MATCHING OCCURRING UNTIL TEMPERATURE NOMINAL SUBTLE
/datasheets/files/linear/lview3/parts.ebd
Linear 08/10/1998 5000.33 Kb EBD parts.ebd
INPUTS CURRENT INTERFACES BEING IMPEDANCE MAY FOR TURN DROPOUT OVERLOADS FLOP 3300RPM 3300RPM FLOW RESISTOR AMPLIFIER INVOLVING FLAWS APPLIED RELIABLE MINIMIZE FIGURE DOMINATES SUPPLIED MEASUREMENT OVERDAMPED LIMITED BEGINS 65MA AMPLIFIER AMPLIFIES SENSOR APPLIED SETS ACCOMPLISHING COMPUTERS FIGURE INTERVAL FILTER SUCCESSFULLY AMPLITUDE BEING IMPEDANCE EASILY FORMS MAY FOR KEY TURN DISCHARGE SYNCHRONOUS AIDING PRIMARILY OBVIOUS PROTECTION LT1017 LT1017 GAUGE LT1018 LT1018 PROTECTED NEARLY MATCHING OCCURRING UNTIL TEMPERATURE NOMINAL
/datasheets/files/linear/lview4/parts.edb
Linear 15/02/2000 7168.02 Kb EDB parts.edb