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Part Manufacturer Description PDF & SAMPLES
ISL14017IRZ Intersil Corporation 50MHz, OTHER CLOCK GENERATOR, PQCC16, 3 X 3 MM, ROHS COMPLIANT, PLASTIC, MO-220VEED-2, MLF-16
ISL14017IRZ-T Intersil Corporation 50MHz, OTHER CLOCK GENERATOR, PQCC16, 3 X 3 MM, ROHS COMPLIANT, PLASTIC, MO-220VEED-2, MLF-16
SM320C40TABS50 Texas Instruments 32-BIT, 50MHz, OTHER DSP, UUC325
SMJ320C40TBBM50 Texas Instruments 32-BIT, 50MHz, OTHER DSP, UUC325
TMS320LBC52PJL50 Texas Instruments 16-BIT, 50MHz, OTHER DSP, PQFP100
TMS320LBC57SPGEL50 Texas Instruments 16-BIT, 50MHz, OTHER DSP, PQFP144

"class AB Linear" 50mhz

Catalog Datasheet MFG & Type PDF Document Tags
Abstract: /50MHz Amplifier for ADSL-LT1795 . Class AB Automatic Bias Control-LT1166 , are trademarks of Linear Technology Corporation. 1 Dual 500mA/50MHz Amplifier for ADSL-LT1795 , Application of the Month Class AB Automatic Bias Control Class AB amplifiers provide "near Class A , , the amplifier dissipates a lot of power. Figure 1 shows the sensitivity of the Class AB amplifier to Linear Technology
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LT1813 LTC1759 AMPLIFIER 1800w power amplifier mosfet up to 50mhz LT1166 IRF9240 LTC1599 100MH 1-800-4-LINEAR
Abstract: Microwave Surface Mount PIN Diodes 10 Linear Class A & AB 40 MRI PIN Diode Selector Guide , CT @ -8V (Max) (pF) (Max) (pF) Q (4V/50MHz) Q (4V/50MHz) min min 12 12 9 9 6 6 4.5 , 2.6-3.8 RATIO CT 1V/CT 3V RATIO CT 1V/CT 6V Q (4V/50MHz) (Min) Outline Dwg Number , @ -4.0V (4V/50MHz) CT @ 0V CT @ -20V (Min) (V) (Min) (Min - Max) (Typ) (pF) (Min - Max) (pF , °C 15 Volt Abrupt Junction Varactors, Gamma = 0.6 TOTAL Vb@10 RATIO CAPACITANCE uA Q (4V/50MHz Microsemi
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2N5109 SGS GC4200 MS4-009-13
Abstract: describes an improved version of that amplifier which is capable of class AB linear operation. The design , this is too high for reliable class AB operation, 80V was eventually chosen for this design. This is , type 43 material has a ui of 850. At 50MHz, type 61 material (ui of 125) would also be satisfactory , transformer. The output network is straightforward. The proper load impedance for class AB is calculated , 50MHz Amplifier Schematic network duplicated for each device. Since these devices were quite uniform Advanced Power Technology
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APT9802 amidon 43 toroid core amidon toroid core balun APT9702 FERRITE TRANSFORMER 500W amidon toroid core ARF448A/B
Abstract: : Fréquencemètre réciproque 50MHz. - Balayage interne lin. ou log. et vobulation externe VCF ou FM. Modulation AM , paramètres. COM PLETE : Reciprocal frequency counter 50MHz. - Internal linear or logarithmic sweep, and , LS T Ä N D IG : Gegenseitiger Frequenzmeter 50MHz. - Interne Wobbelung linear oder logarithmische, und Externe Wobbelung VCF oder FM. Modulationen des typs AM. - Funktion CMos. - Offset u n ab h än gig , . Fréquencemètre · Plage de fréquence : 0 à 50MHz en 8 gammes automatiques. Lecture réciproque pour les très basses -
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ampli lineaire funktionsgenerator RS232 10OKH
Abstract:   Advanced Heat-Sink Technology â  50MHz to 1000MHz Instantaneous Bandwidth â  Input , Signal Models Available Applications â  Class AB Operation for Public Mobile Radio â , ' Reel with 2500 pieces RFHA1000PCBA-410 Fully assembled evaluation board 50MHz to 1000MHz; 28V , 14.5 dB P3DB, 100MHz 3 dB POUT = 30dBm, 50MHz to 1000MHz -0.02 dB/°C Gain , Efficiency (PAE) -10 dB 41.5 dBm 50MHz to 1000MHz 60 % 50MHz to 1000MHz RF Micro RF Micro Devices
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RFHA1000 1000MH DS131017
Abstract: urm TECHNOLOGY DCSCRIPTIOn The LT1195M/883 is a video operational amplifier opti mized for operation on single 5V and ±5V supply. Unlike many high speed amplifiers, the LT1195M/883 features high open-loop gain, over 75dB, and the ability to drive heavy loads to a full power bandwidth of 8.5MHz at 6Vp. p. The LT1195M/883 has a unity-gain stable bandwidth of 50MHz, and a 60° phase margin, and consumes , [_ow Power, High Speed Operational Amplifier ab s o lu t* maximum r o t iîig s Total Supply -
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LT1190 MIL-STD883 195M/883 MIL-STD-883
Abstract: power supply. The PA delivers 250W with 15dB gain at 50MHz. The amplifier is built around a "symmetric , feedback capacitance in the higher impedance environment. 50MHz > 15dB 250W >70% >20:1 The ARF448A/B have respectable high frequency gain as shown in Figure 1. At the 50MHz design frequency about , accurately calculates the parallel load resistance for class A, AB, and B applications but does not deal , equation (2) as 90 Ohms and the output capacitance is 125pF. At 50MHz the reactance Xcoss is -j25.4 Ohms Advanced Power Technology
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ARF448 5961007601 ARF448A ARF448 equivalent 40.68mhz hf class AB power amplifier mosfet ARF446
Abstract: power supply. The PA delivers 250W with 15dB gain at 50MHz. The amplifier is built around a "symmetric , feedback capacitance in the higher impedance environment. 50MHz > 15dB 250W >70% >20:1 The ARF448A/B have respectable high frequency gain as shown in Figure 1. At the 50MHz design frequency about , accurately calculates the parallel load resistance for class A, AB, and B applications but does not deal , 50MHz the reactance Xcoss is -j25.4 Ohms. Calculating the value of Rs to be 6.6 Ohms, the voltage can Advanced Power Technology
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9702a ARF460 Lumped mosfet transistor checking and testing class E power amplifier 13.56 RG-316 double shield ARF460A ARF460B
Abstract: FLL400IP-2 L-Band Medium & High Power GaAs FET FEATURES â'¢ â'¢ â'¢ â'¢ â'¢ Push-Pull Configuration High Power Output: 35W (Typ.) High PAE: 44% (Typ.) Broad Frequency Range: 800 to 2000 MHz. Suitable for class A operation at 10V and class AB operation at 12V DESCRIPTION The FLL400IP-2 is a 35 Watt GaAs FET that employs a push-pull design which offers ease of matching, greater consistency and a , +5.0MHz IM3 IM5 26 28 30 32 34 36 38 40 42 44 Total Output Power Fujitsu
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FCSI0799M200
Abstract: FLL400IP-2 L-Band Medium & High Power GaAs FET FEATURES · · · · · Push-Pull Configuration High Power Output: 35W (Typ.) High PAE: 44% (Typ.) Broad Frequency Range: 800 to 2000 MHz. Suitable for class A operation at 10V and class AB operation at 12V DESCRIPTION The FLL400IP-2 is a 35 Watt GaAs FET that employs a push-pull design which offers ease of matching, greater consistency and a , -56 -58 -60 VDS = 12V IDS = 2A f = 1.96GHz f = +5.0MHz IM3 IM5 26 28 30 32 Fujitsu
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Abstract: FLL400IP-2 L-Band Medium & High Power GaAs FET FEATURES · · · · · Push-Pull Configuration High Power Output: 35W (Typ.) High PAE: 44% (Typ.) Broad Frequency Range: 800 to 2000 MHz. Suitable for class A operation at 10V and class AB operation at 12V DESCRIPTION The FLL400IP-2 is a 35 Watt GaAs FET that employs a push-pull design which offers ease of matching, greater consistency and a broader , -34 -36 -38 -40 -42 -44 -46 -48 -50 -52 -54 -56 -58 -60 VDS = 12V IDS = 2A f = 1.96GHz Df = +5.0MHz Fujitsu
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Abstract: FLL400IP-2 L-Band Medium & High Power GaAs FET FEATURES · · · · · Push-Pull Configuration High Power Output: 35W (Typ.) High PAE: 44% (Typ.) Broad Frequency Range: 800 to 2000 MHz. Suitable for class A operation at 10V and class AB operation at 12V DESCRIPTION The FLL400IP-2 is a 35 Watt GaAs FET that employs a push-pull design which offers ease of matching, greater consistency and a , -60 VDS = 12V IDS = 2A f = 1.96GHz f = +5.0MHz IM3 IM5 26 28 30 32 34 36 Fujitsu
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fujitsu gaas fet
Abstract: FLL400IP-2 L-Band Medium & High Power GaAs FET FEATURES · · · · · Push-Pull Configuration High Power Output: 35W (Typ.) High PAE: 44% (Typ.) Broad Frequency Range: 800 to 2000 MHz. Suitable for class A operation at 10V and class AB operation at 12V DESCRIPTION The FLL400IP-2 is a 35 Watt GaAs FET that employs a push-pull design which offers ease of matching, greater consistency and a , -60 VDS = 12V IDS = 2A f = 1.96GHz f = +5.0MHz IM3 IM5 26 28 30 32 34 36 Eudyna Devices
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Eudyna Devices power amplifiers eudyna GaAs FET Amplifier
Abstract: FLL400IP-2 L-Band Medium & High Power GaAs FET FEATURES · · · · · Push-Pull Configuration High Power Output: 35W (Typ.) High PAE: 44% (Typ.) Broad Frequency Range: 800 to 2000 MHz. Suitable for class A operation at 10V and class AB operation at 12V DESCRIPTION The FLL400IP-2 is a 35 Watt GaAs FET that employs a push-pull design which offers ease of matching, greater consistency and a , -60 VDS = 12V IDS = 2A f = 1.96GHz f = +5.0MHz IM3 IM5 26 28 30 32 34 36 Eudyna Devices
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Abstract: FLL400IP-2 L-Band Medium & High Power GaAs FET FEATURES · · · · · Push-Pull Configuration High Power Output: 35W (Typ.) High PAE: 44% (Typ.) Broad Frequency Range: 800 to 2000 MHz. Suitable for class A operation at 10V and class AB operation at 12V DESCRIPTION The FLL400IP-2 is a 35 Watt GaAs FET that employs a push-pull design which offers ease of matching, greater consistency and a broader , -54 -56 -58 -60 VDS = 12V IDS = 2A f = 1.96GHz f = +5.0MHz IM3 IMD (dBc) IM5 26 28 Eudyna Devices
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Abstract: FLL600IQ-2 FEATURES â'¢ â'¢ â'¢ â'¢ â'¢ Push-Pull Configuration High Power Output: 60W (Typ.) High PAE: 43% (Typ.) Broad Frequency Range: 800 to 2000 MHz. Suitable for class AB operation. DESCRIPTION The FLL600IQ-2 is a 60 Watt GaAs FET that employs a push-pull design which offers ease of matching, greater consistency and a broader bandwidth for high power L-band amplifiers. This product is , 1.96GHz âf = 5.0MHz 2-tone test -28 -32 IM3 -36 IM5 IMD (dBc) -40 -44 -48 -52 Eudyna Devices
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Abstract: FLL600IQ-3 L-Band Medium & High Power GaAs FET FEATURES · · · · · Push-Pull Configuration High Power Output: 60W High PAE: 43%. Broad Frequency Range: 2000 to 2700 MHz. Suitable for class AB operation. DESCRIPTION The FLL600IQ-3 is a 60 Watt GaAs FET that employs a push-pull design that offers ease of matching, greater consistency and a broader bandwidth for high power L-band amplifiers. This , 5.0MHz 2-tone test IM3 -36 IMD (dBc) -40 IM5 -44 -48 -52 -56 -60 26 28 30 Eudyna Devices
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Abstract: FLL600IQ-2 FEATURES · · · · · Push-Pull Configuration High Power Output: 60W (Typ.) High PAE: 43% (Typ.) Broad Frequency Range: 800 to 2000 MHz. Suitable for class AB operation. DESCRIPTION The FLL600IQ-2 is a 60 Watt GaAs FET that employs a push-pull design which offers ease of matching, greater consistency and a broader bandwidth for high power L-band amplifiers. This product is , Dissipation (W) 120 FLL600IQ-2 OUTPUT POWER vs. IMD VDS = 12V IDS = 4.0A f = 1.96GHz f = 5.0MHz 2 Fujitsu
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FCSI0597M200
Abstract: FLL600IQ-2 FEATURES · · · · · Push-Pull Configuration High Power Output: 60W (Typ.) High PAE: 43% (Typ.) Broad Frequency Range: 800 to 2000 MHz. Suitable for class AB operation. DESCRIPTION The FLL600IQ-2 is a 60 Watt GaAs FET that employs a push-pull design which offers ease of matching, greater consistency and a broader bandwidth for high power L-band amplifiers. This product is , Dissipation (W) 120 FLL600IQ-2 OUTPUT POWER vs. IMD VDS = 12V IDS = 4.0A f = 1.96GHz f = 5.0MHz 2 Eudyna Devices
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Abstract: FLL600IQ-2 FEATURES · · · · · Push-Pull Configuration High Power Output: 60W (Typ.) High PAE: 43% (Typ.) Broad Frequency Range: 800 to 2000 MHz. Suitable for class AB operation. DESCRIPTION The FLL600IQ-2 is a 60 Watt GaAs FET that employs a push-pull design which offers ease of matching, greater consistency and a broader bandwidth for high power L-band amplifiers. This product is targeted to reduce the , -2 OUTPUT POWER vs. IMD VDS = 12V IDS = 4.0A f = 1.96GHz Df = 5.0MHz 2-tone test -28 -32 -36 -40 IMD (dBc Fujitsu
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