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Part Manufacturer Description PDF & SAMPLES
HCTS193KMSR Intersil Corporation HCT SERIES, SYN POSITIVE EDGE TRIGGERED 4-BIT BIDIRECTIONAL BINARY COUNTER, CDFP16, CERAMIC, DFP-16
HCTS299DMSR Intersil Corporation HCT SERIES, 8-BIT BIDIRECTIONAL PARALLEL IN PARALLEL OUT SHIFT REGISTER, TRUE OUTPUT, CDIP20
HCTS299KMSR Intersil Corporation HCT SERIES, 8-BIT BIDIRECTIONAL PARALLEL IN PARALLEL OUT SHIFT REGISTER, TRUE OUTPUT, CDFP20
CD4029BDMSR Intersil Corporation 4000/14000/40000 SERIES, SYN POSITIVE EDGE TRIGGERED 4-BIT BIDIRECTIONAL BINARY COUNTER, CDIP16, BRAZE SEALED, DIP-16
CD40193BDMSR Intersil Corporation 4000/14000/40000 SERIES, SYN POSITIVE EDGE TRIGGERED 4-BIT BIDIRECTIONAL BINARY COUNTER, CDIP16, BRAZE SEALED, DIP-16
CD40193BKMSR Intersil Corporation 4000/14000/40000 SERIES, SYN POSITIVE EDGE TRIGGERED 4-BIT BIDIRECTIONAL BINARY COUNTER, CDFP16, CERAMIC, DFP-16

"bidirectional zener" do-35

Catalog Datasheet MFG & Type PDF Document Tags
Abstract: Diodes Description PKG parts per kit 1N5229BTR 4.3V 500MW 5% ZENER, DO35 DO-35 10 1N5230BTR 4.7V 500MW 5% ZENER, DO35 DO-35 10 1N5231BTR 5.1V 500MW 5% ZENER, DO35 DO-35 10 1N5232BTR 5.6V 500MW 5% ZENER, DO35 DO-35 10 1N5235BTR 6.8V 500MW 5% ZENER, DO35 DO-35 10 1N5239BTR 9.1V 500MW 5% ZENER, DO35 DO-35 10 1N5240BTR 10V 500MW 5% ZENER, DO35 DO-35 10 1N5242BTR 12V 500MW 5% ZENER, DO35 DO-35 10 1N5248BTR 18V Fairchild Semiconductor
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DO-35 1N5250B 1N5221B FXL2TD24510X FXL4245MPX MLP-24
Abstract: % ZENER, DO35 Pkg DO-35 DO-35 DO-35 Parts per Kit 5 5 5 1N5231BTR 1N5232BTR 5.1V 500MW 5% ZENER, DO35 5.6V 500MW 5% ZENER, DO35 DO-35 DO-35 5 5 1N5233BTR 1N5235BTR 1N5236BTR 6V 500MW 5% ZENER, DO35 6.8V 500MW 5% ZENER, DO35 7.5V 500MW 5% ZENER, DO35 DO-35 DO-35 DO-35 5 5 5 1N5239BTR 9.1V 500MW 5% ZENER, DO35 DO-35 5 1N5240BTR 1N5242BTR 10V 500MW 5% ZENER, DO35 12V 500MW 5% ZENER, DO35 DO-35 DO-35 5 5 1N5248BTR 1N5250B 18V 500MW -
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zener diode 4.7V zener 8v diode zener diode 6.8v zener 18V Zener 5.1V MicroPak-10 500MV DQFN-14 DQFN-16 SC70-5 FXL4T245BQX FXL4TD245BQX
Abstract: / 400 30 30 0.95 1.25 35 / 35 SMA (DO-214AC) ER1A / ER1E 1016 Grand Blvd., Deer , 1.0 50 / 300 30 30 0.95 1.25 35 / 35 SMB (DO-214AA) ER2A / ER2E 2.0 50 / 300 50 0.95 2.0 50 1.25 35 / 35 (DO-214AA) ER3A / ER3E 3.0 3.0 50 / 300 100 100 0.95 1.25 35 / 35 SMC (DO-214AB) SMB SURFACE MOUNT , SL5226B ­ SL5262B SL-35 PACKAGE 500 mW ZENER DIODE SMBZ5221B ­ SMBZ5261B 500 mW ZENER DIODE Surge Components
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Zener Diode minimelf 3 Ampere zener diode bz84c DIODE S1M DO-214AC S100 NPN Transistor S1m diode SL4001G SL4007G SL-41 SL4933G SL4937G SMBT2222A
Abstract: . 35 RF SECTION, Receiver , Features Package 4 V to 35 V; 1ÂuF - 3300ÂuF 2.5mm to 1.3mm height 4 V to 50 V; 0.1 ÂuF - 1500 , Status NEW Description Features Package 4 V to 35 V; 1ÂuF - 3300ÂuF 2.5mm to 1.3mm height , Features Package 4 V to 35 V; 1ÂuF - 3300ÂuF 2.5mm to 1.3mm height SMD A - X Case EIA Size Vishay Intertechnology
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Diodes CZA04S CZA06S IFCB-0402 ILC-0402 IMC-0402 HPC0201A
Abstract: TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 DO-35 DO-41 www.vishay.com Vishay Intertechnology
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VBUS54ED-FBL LLP2510-10L VCUT05D1-SD0 VBUS05A1-SD0 CLP0603 DO-219AB
Abstract: ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) VF = 3.5 V Max, IF = 35 A Pulse (except , Mini Mosorb (continued) ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) VF = 3.5 V Max, IF = 35 A Pulse (except bidirectional devices). Working Peak Reverse Voltage VRWM (Volts , Polarity Band 1 ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) VF = 3.5 V Max, IF = 50 , noted) VF = 3.5 V Max, IF = 50 A Pulse (except bidirectional devices). Breakdown Voltage(3) VBR Motorola
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Gfk 81a LT 543 common cathode Gfp 81a MMBZ15ALT1 mzp a 001 96 16 MMBZ20ALT1 1N5283 DO-204AA 1N5287 1N5297 1N5298 1N5305
Abstract: 100 2 1.1 GBPC35005 50 35 1.1 2KBP02M 200 2 1.1 GBPC3501 100 35 1.1 2KBP04M 400 2 1.1 GBPC3502 200 35 1.1 2KBP06M 600 2 1.1 GBPC3504 400 35 1.1 2KBP08M 800 2 1.1 GBPC3506 600 35 1.1 2KBP10M 1000 2 1.1 GBPC3508 800 35 1.1 3N246 50 1.5 1.3 GBPC3510 1000 35 , 1 30 1.7 75 10 FEP16AT Common Cathode 50 16 200 0.975 35 10 Fairchild Semiconductor
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transistor 2N5952 transistor KSP44 1n967b schottky KBL BRIDGE RECTIFIER 005 zener diode reference guide FYPF2004DN
Abstract: Characteristics Vz (V) 3.1 to 3.5 5.9 to 6.5 6.47 to 7.0 6.47 to 7.0 25.1. to 28.9 5.31 to 5.92 5.9 to 6.5 6.47 to , 5 30 30 (VRRM) Io (mA) 30 15 30 30 35*1 30 50 5 15 50 30 30 5 50 15 50 30 30 50 50 30 5 30 50 35*1 , DO-35/MHD (Glass) MPAK/CMPAK URP/UFP/SFP* DO-35/MHD (Glass) LLD (Glass) URP MPAK CMPAK CMPAK4 EFP SFP , Highly-reverse-voltage switching MPAK DO-35/MHD (Glass) High power DO-41 (Glass) *: The package is available , applications Applications Package DO-35 DO-34 (MHD) General LLD MPAK URP DO-35 DO-34 (MHD) Low noise LLD HZK-LL Renesas Technology
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r61505 R63400 R61506 R61501 NS953 Niigata Seimitsu R61504 MFP12 RKP400KS HVL355C/381C/358C/ 396C/397C RKV600KP/601KP/602KP/ 603KP/650KP/652KP
Abstract: Package Mini3-G1 Mini4-G1 Mini6-G1 Mini6-G2 DO-34-A1 DO-35-A1 MA3X199 MA3X158 , MA3J143AG MA2B171 MA2B162 MA3X157A MA3S133 MA3S1330G DO-35-A1 MA2C167 MA3J147 , 35 0.025 10 40 200 MA2J112 MA2J1120G 0.05 MA2C178 20 MA2C195 35 0.005 , ML3-N2 MA2S077 SSMini2-F2 MA2S077G 35 100 0.9 6 0.65 SSMini2-F4 MA27077 , 50 Part No. MA2B001 Package DO-35-A2 1): Ta < 50°C, t < 10 us, repetition 60 Hz -
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MA22D39 MA3DD82 zener diode k11 k11 zener diode diode k6 MA2B150 MA3DF40 MA22D23 MA2YD23 MA22D40 MA22D28 MA2YD28
Abstract: otherwise noted) VF = 3.5 V Max, IF* = 35 A (except bidirectional devices). Breakdown Voltage {{VBR Motorola
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sa15ca tvs motorola sa51a SA50A SA170A
Abstract: .0A/D SA5.0A Series ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) VF = 3.5 V Max, IF* = 35 A (except bidirectional devices). Breakdown Voltage Maximum Reverse Leakage @ VRWM ON Semiconductor
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Zener IT 243 SA15CA zener diode SA12A SA24A SA20A SA18A
Abstract: 0.4±0.1 1.8±0.2 29±1 2.7±0.3 29±1 1.2 DO-35 :(mm) CATHODE BAND 0.5±0.1 29±1 3.8±0.2 29±1 1.8±0.2 1/6 LESHAN RADIO COMPANY, LTD. BI-DIRECTIONAL TRIGGER DIODES 2. DO-35 DO-35 GLASS-SEALED BI-DIRECTIONAL TRIGGER DIODES Breakover Voltage See Fig 1 Symmetry ± V , ± 1 28 35 56 Typ 3.8 ± 0.2 +VBO ­ ­VBO See Fig 1 DB-3 DB-4 DB-6 DB-3 DB , Condition 1.8 ± 0.2 Parameter Symbol 10 Leakage Current DO ­ 35 (mm) uA See Fig 1 Leshan Radio Company
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zener db3 DIAC-Triac diode zener db3 DB3 ZENER diode diode db3 51 DIAC-Triac* 120v LG-16 STP100
Abstract: SA170A ELECTRICAL CHARACTERISTICS (Ta - 25°C unless otherwise noted) Vp - 3.5 V Max, Ip* - 35 A (except -
OCR Scan
SA13CA SA12CA SA15CA SA18CA SA24CA
Abstract: CHARACTERISTICS (T/\ = 25°C unless otherwise noted) Vp = 3.5 V Max, Ip* = 35 A (except bidirectional devices). -
OCR Scan
motorola tra 103 axial motorola zener
Abstract: 4684955 I T T SEMICONDUCTORS fl7 DE|4t.fi415S D O D E B E T 0 | SCHOTTKY DIODES, BIDIRECTIONAL ZENER DIODES r - o i -o*î ' T-JhS>3 ' Silicon Schottky Barrier Diodes in DO-35 Package for general purpose applications with low forward voltage drop and very fast switching times. Using the type designations LL101A, LL103A, LL104A and so on, these Schottky Barrier diodes are available in , 9 6 5 4 3 2 35 45 75 125 145 175 210 305 30 38 65 110 132 162 195 285 -
OCR Scan
SD101A SD101B SD101C SD103A SD103B SD103C
Abstract: Current VF 3.0 3.5 4.0 V View Angle[5] 2 1/2 130 deg. Thermal resistance[6 , ] 3.0 3.5 4.0 V 2 1/2 130 deg. RJ-B [5] Thermal Resistance Unit Min , 2.0 2.5 3.0 3.5 4.0 Forw ard Voltage [V] 2. Forward Current vs. Normalized Relative Seoul Semiconductor
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F50381 IEC825
Abstract: 460 467 nm Forward Current VF 3.0 3.5 4.0 V View Angle[5] 2 1/2 130 , Typ Max 32 38 - lm D 523 533 540 nm VF [3] [4] 3.0 3.5 , 250 200 150 100 50 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 Forw ard Seoul Semiconductor
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SSC backlight 350mA bidirectional zener diode Seoul Semiconductor UV F50381 smd zener diode color code smd zener diode x5 X8 diode zener
Abstract: 1N5891 957b 1N4848 mz92 1N470A 1N589 1N4042A transistor GDV 64A 1N5844 Cross Reference and Index . . . . . . . . . . . . . . . . . . . . . 2-1 500 mW DO-35 Glass General , 400 mW DO-35 1N821,A 1N823,A 1N825,A 1N827,A 1N829,A . . . . . . . . . . . . . . . . . . . . . . . . Motorola
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UJT-2N2646 PIN DIAGRAM DETAILS UJT-2N2646 motorola diode marking 925b Zener Diode SOT-23 929b Motorola 1n4504 1N5856B
Abstract: 467 nm VF 3.0 3.5 4.0 V [3] [4] 2 1/2 [5] Thermal Resistance Unit , View Angle Typ Max 32 38 - lm D 523 533 540 nm VF 3.0 3.5 , 250 200 150 100 50 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 Forw ard -
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F50380 SMD diode JB MAX280
Abstract: ISO11992 amplifier. VDD 3.5 V CAN_H 2.5 V CAN_L Transmitter 2.5 V 2.5 V DV CAN_H , capacitance of the protective network measured from each signal line to ground should be less than 35 pF for ON Semiconductor
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SAE J2411 Solenoid control switch Bosch ABS iso 11992 RH -24V SDS RELAY RH -12V SDS RELAY ISO 11898-3 AND8169/D
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