500 MILLION PARTS FROM 12000 MANUFACTURERS

DATASHEET SEARCH ENGINE

Direct from the Manufacturer

Part Manufacturer Description PDF & SAMPLES
XRP7618IGBTR-F Exar Corporation LED Driver, 8-Segment, PDSO20, GREEN, TSSOP-20
S-8541A16FN-IGBT2G SII Semiconductor Corporation Switching Controller, 0.1A, 690kHz Switching Freq-Max, CMOS, PDSO8, LEAD FREE, MSOP-8
M2S050TS-1VFG400 Microsemi Corporation Field Programmable Gate Array, 56340-Cell, CMOS, PBGA400
MSMCJLCE30AE3 Microsemi Corporation Trans Voltage Suppressor Diode, 1500W, 30V V(RWM), Unidirectional, 1 Element, Silicon, DO-214AB, ROHS COMPLIANT, PLASTIC, SMCJ, 2 PIN
APT75GN60LDQ3G Microsemi Corporation Insulated Gate Bipolar Transistor, 155A I(C), 600V V(BR)CES, N-Channel, TO-264AA, ROHS COMPLIANT, TO-264, 3 PIN
JANTXV1N4484 Microsemi Corporation Zener Diode, 62V V(Z), 5%, 1.5W, Silicon, Unidirectional, DO-41, HERMETIC SEALED, GLASS PACKAGE-2

"bi-directional switches" IGBT

Catalog Datasheet MFG & Type PDF Document Tags
Abstract: IXAN0049 A New IGBT with Reverse Blocking Capability A. Lindemann IXYS Semiconductor GmbH , converters Abstract A new IGBT has been developed, providing reverse blocking capability. This feature is , standard IGBT without reverse blocking capability and a series IXAN0049 A New IGBT with Reverse , less conduction losses, lower space requirements and cost. An IGBT with reverse blocking capability , cross section of the reverse blocking IGBT chip. Cell structure as drawn will continue to the left IXYS
Original
applications of blocking oscillator induction heating oscillator circuit bi-directional switches IGBT igbt for HIGH POWER induction heating IGBT based voltage source converter Converter for Induction Heating
Abstract: EconoMAC the first all-in-one IGBT module for matrix converters Eupec: Hr. M. Hornkamp; Hr. M , -1 BDS3-2 BDS3-3 L2 L3 IGBT 1 IGBT 2 I U V Figure 1: Structure of a matrix , eight cases can be seen in figure 8. Forced Case 1 IGBT 1 IGBT 2 IGBT 3 IGBT 4 Case 4 IGBT 1 IGBT 2 IGBT 3 IGBT 4 Natural x x x x Case 2 IGBT 1 IGBT 2 IGBT 3 IGBT 4 x x x x x x x x x x x x Case 3 IGBT 1 IGBT 2 IGBT 3 IGBT 4 x x x x x x x x x x x x Eupec
Original
siemens igbt eupec matrix EconoMAC econoMac IGBT siemens rectifier pwm igbt matrix converter siemens igbt inverters CH2721-9/89/0000-0360
Abstract: selection of products for power discretes: MOSFET and IGBT transistors, thyristors, triacs and AC , the IGBT family with the new strip layout PowerMesh geometry, and the TurboswitchTM diodes family , motion control Rectifier bridge Diode M Umot Power supply IGBT/ Mosfet driver t Imot Current sensing IGBT Microcontroller t High-frequency PWM universal motor , . Power transistors The IGBT is the best 600V rated device for the PWM brush DC motor drive STMicroelectronics
Original
universal MOTOR speed control using scr selni 500w pwm DC motor controller selni universal motor bi-directional switches IGBT driver induction motor speed control with scr BRMOTOR/0503
Abstract: Contents Powerline IGBT Modules Pulsed Power Thyristors 1200V IGBT Modules , single switches 2 1700V IGBT Modules Bi-directional switches, choppers, dual switches, half bridges and single switches 3 3300V IGBT Modules Choppers, dual switches, half bridges and single switches 4 Gate Turn-off Thyristors 4500V IGBT , Devices - Reverse Blocking Types 13 6500V IGBT Modules Single switches 4 Dynex
Original
kpb 307 KP8 500 KP9 1500 -12 KPd 1500 TEG KP5-600 THYRISTOR igbt types 6000v DS5766-4
Abstract: Contents Powerline IGBT Modules Pulsed Power Thyristors 1200V IGBT Modules , bridges and single switches 3 Pulsed Power Capability 10 1700V IGBT Modules , Disc Devices 11 3300V IGBT Modules Choppers, dual switches, half bridges and single switches 5 Gate Turn-off Thyristors 4500V IGBT Modules Choppers, Single , Types 12 6500V IGBT Modules Single switches 5 IGBT and FRD Die Dynex
Original
Tag 225-600 IGBT cross-reference fast diode 3000V SCR GTO 522.500. 5 x 20 mm tag 200-600
Abstract: Contents Powerline IGBT Modules Pulsed Power Thyristors 1200V IGBT Modules , bridges and single switches 3 Pulsed Power Capability 10 1700V IGBT Modules , Disc Devices 11 3300V IGBT Modules Choppers, dual switches, half bridges and single switches 5 Gate Turn-off Thyristors 4500V IGBT Modules Choppers, Single , Types 12 6500V IGBT Modules Single switches 5 IGBT and FRD Die Dynex
Original
DCR2950W dim1200fss12 thyratron DCR890F DSF110 DIM800DCS12-A
Abstract: Contents Powerline IGBT Modules Pulsed Power Thyristors 1200V IGBT Modules , bridges and single switches 3 Pulsed Power Capability 10 1700V IGBT Modules , Disc Devices 11 3300V IGBT Modules Choppers, dual switches, half bridges and single switches 5 Gate Turn-off Thyristors 4500V IGBT Modules Choppers, Single , Types 12 6500V IGBT Modules Single switches 5 IGBT and FRD Die Dynex
Original
igbt sinewave inverter DCR2630Y thyristor phase control 600v to 1600v PT85QWX45 HVDC plus GTO hvdc thyristor
Abstract: Application Characteristics of an Experimental RB-IGBT (Reverse Blocking IGBT) Module E. R. Motto , silicon carbide. The RC-IGBT (Reverse Conducting IGBT) and the RB-IGBT (Reverse Blocking IGBT) are two , ) Abstract - This paper describes the characteristics of a new 1200V, 100A reverse blocking IGBT chip. It , Package IPM EV-IPM: IPM for EV and/or HEV applications RB-IGBT: Reverse Blocking type IGBT RC-IGBT: Reverse Conducting type IGBT M-Converter: Matrix Converter HEV Inverter: Inverter systems for hybrid -
Original
inverters circuit diagram igbt diode matrix diagram SiC IPM inverter circuit using IGBT module diode gen 52 Mitsubishi SiC IPM module
Abstract: AN5700 - IGBT/FRD Identifier Part Numbering Scheme For IGBT & FRD Modules AN5700-1.4 February , within the product I = IGBT silicon F = FRD silicon D IM80 0 D D S 1 7 - A 0 0 0 M = Indicates , 6500V 1/8 www.dynexsemi.com AN5700 - IGBT/FRD Identifier D I M 8 0 0 D D S 1 7 -A0 0 0 Technology identifier A = Standard Non Punch Through (NPT) DMOS IGBT and complementary FRD E = Trench Field Stop IGBT die and complementary FRD F = Soft Punch Through (SPT) 3.5kV IGBT die and complementary FRD Dynex
Original
DIM800DDM17-A000 6.5kV IGBT dynex igbt die bi-directional IGBT bidirectional switch DIM200PLM33-A019 igbt full h bridge M800D
Abstract: , ESD-Protected IGBT ISL9V2040P3 10A, 200V Logic-Level, Voltage-Clamped, Avalanche-Energy-Rated, ESD-Protected IGBT ISL9V2040S3S 10A, 200V Logic-Level, Voltage-Clamped, Avalanche-Energy-Rated, ESD-Protected IGBT ISL9V3036D3S 17A, 360V Logic-Level, Voltage-Clamped, Avalanche-Energy-Rated, ESD-Protected IGBT ISL9V5036P3 31A, 360V Logic-Level, Voltage-Clamped, Avalanche-Energy-Rated, ESD-Protected IGBT ISL9V5036S3S 31A, 360V Logic-Level, Voltage-Clamped, Avalanche-Energy-Rated Fairchild Semiconductor
Original
LSI SAS 2208 li shin smps 500W P channel 600v 20a IGBT smps igbt optocoupler NAND FAN5236 FAN7021 FAN4822 FAN8200 FSAL200 FST34X245/34X2245
Abstract: . 1.1 MOSFET AND IGBT TECHNOLOGY Due to the absence of minority carrier transport, MOSFETs can be , `Miller' capacitances. IGBT derives its advantages from MOSFET and BJT. It operates as a MOSFET with an , sharing amongst parallel devices and better Rthjc . 1.2 POWER LOSSES IN DRIVERS AND DRIVEN MOSFET/IGBT , turn-on and turn-off delays as well as turn-on and turn-off times. For an IGBT, it would be similarly , values of ID and VDS or VCE and IC coexist in a MOSFET or IGBT respectively. Thus average switching IXYS
Original
IXAN0009 GE SCR Manual mosfet inverter 2kW 100khz smps 1kW schematic diagram PWM inverter 500w circuit diagram of 2kw smps full bridge ixd414 15VDC HCPL2201 10MFD 47MFD 35VDC
Abstract: IGBT transistors, thyristors, triacs and AC switches, fast rectifiers and protection devices ranging , DIODE M RECTIFIER BRIDGE t POWER SUPPLY IGBT current sense IGBT/ MOSFET , for accurate control and speed measurement. Power Transistors Fast Rectifiers The IGBT is the , WITH IGBT Imot BI-DIRECTIONAL FREE WHEELING WITH IGBT DUTY CYCLE t current , /Os. Power Transistors The IGBT is the best 600V rated device for PWM induction motor drive STMicroelectronics
Original
slip ring induction motor m 9583 transistor axial scalar control of induction motor universal washing machine motor pwm 600w inverter diagram 4801 MOSFET PL-00-513 E-08004 E-28027 SE-16425 CH-1215 26B/10
Abstract: IXRP 15N120 Advanced Technical Information IGBT with Reverse VCES =±1200V IC25 = 25A VCE(sat) typ.= 2.5V Blocking capability 2 TO-220 1 TAB 1 = Gate; 2, TAB = Collector; 3 = Emitter 3 Features IGBT Symbol Conditions Maximum Ratings VCES TVJ = 25°C to , °C ± 1200 V ± 20 V 25 15 A A 30 600 A V 10 us 300 W ·IGBT with , IGBT Symbol Conditions Characteristic Values IXRP 15N120 Fig. 1 turn-on/turn-off with IXYS
Original
IC IGBT 15N120 15n120 igbt igbt clip igbt for induction heating ic IXRP 15N120 IXYS
Abstract: Advanced Technical Information IXRP 15N120 VCES =±1200V IC25 = 25A VCE(sat) typ.= 2.5V Blocking capability IGBT with Reverse 2 TO-220AB 1 TAB 3 1 = Gate; 2, TAB = Collector; 3 = Emitter IGBT Symbol VCES VGES IC25 IC90 ICM VCEK SCSOA Ptot Conditions TVJ = 25°C to 150 , 600 V TC = 25°C Maximum Ratings ± 1200 ± 20 25 15 30 600 10 300 V V A A A V us W Features ·IGBT , ) IGBT Symbol Conditions Characteristic Values (TVJ = 25°C, unless otherwise specified) min. td(on) tr td IXYS
Original
Abstract: IXRP 15N120 Advanced Technical Information VCES = ±1200 V IC25 = 25 A VCE(sat) typ. = 2.5 V IGBT with Reverse Blocking capability 2 TO-220AB 1 TAB 1 = Gate; 2, TAB = Collector; 3 = Emitter 3 Features IGBT ± 1200 Continuous IC25 IC90 TC = 25°C TC = 90 , SCSOA 600 V Ptot TC = 25°C Symbol A V Âus â'¢ IGBT with NPT (non punch through , 20110120b 1-2 Advanced Technical Information IGBT Symbol Conditions Characteristic Values IXYS
Original
Abstract: Advanced Technical Information IXRA 15N120 VCES =±1200V IC25 = 25A VCE(sat) typ.= 2.5V Blocking capability IGBT with Reverse 2 TO-263AB 1 3 1 = Gate; 2, TAB = Collector; 3 = Emitter TAB IGBT Symbol VCES VGES IC25 IC90 ICM VCEK SCSOA Ptot Conditions TVJ = 25°C to 150 , 600 V TC = 25°C Maximum Ratings ± 1200 ± 20 25 15 30 600 10 300 V V A A A V us W Features ·IGBT , ) IGBT Symbol Conditions Characteristic Values (TVJ = 25°C, unless otherwise specified) min. td(on) tr td IXYS
Original
Abstract: . The output terminals (rectified side) has a power transistor (IGBT, MOSFET or bipolar) connected , D16, D17, D20, D21 and power IGBT Q7. The bidirectional switch S2 consists of diodes D9, D10, D12, D13 and power IGBT Q2. The galvanic insulation between the gate-driving and control signals is provided by the dual IGBT gate drive optocoupler device U2 (HCPL-314J). The device integrates two independent optically insulated gate-drives in one package. The power IGBT Q2 gate terminal is connected to Freescale Semiconductor
Original
M68HC08 DRM039 AN2295 schematic diagram induction heating motorola optocoupler motorola transistor manual how to interface optocoupler with triac DRM039/D
Abstract: Contents Powerline IGBT Modules 1200V IGBT Modules Pulsed Power Thyristors , Radiation Hard Products Overview 5 5 Package Outlines IGBT Modules FRD Modules Thyristor & Diode GTO , bridges and single switches 2 1700V IGBT Modules Bi-directional switches, choppers, dual switches, half bridges and single switches 3 3300V IGBT Modules Choppers, dual switches, half bridges and single switches 4 4500V IGBT Modules Choppers, Single switches 6500V IGBT Modules Dynex
Original
DCR370T18 DCR370T DCR1560F26 DCR1560F DCR1710F18 DCR650G34
Abstract: Advanced Technical Information Bidirectional Switch with IGBT and fast Diode Bridge FIO 50-12BD IC25 VCES VCE(sat) typ. = 50 A = 1200 V = 2.0 V in ISOPLUS i4-PACTM 1 5 Features IGBT Symbol Conditions VCES Maximum Ratings TVJ = 25°C to 150°C 1200 ± 20 VGE = ±15 V; RG = 39 ; TVJ = 125°C RBSOA, Clamped inductive load; L = 100 uH tSC (SCSOA) TC = 25 , · IGBT - low saturation voltage - positive temperature coefficient for easy paralleling - fast IXYS
Original
D-68623 IXYS DS 145
Abstract: Advanced Technical Information IXRH 40N120 VCES = ±1200 V IC25 = 55 A VCE(sat) = 2.2 V IGBT with Reverse Blocking capability C TO-247 AD G C E G E C (TAB) C = Collector, TAB = Collector G = Gate, E = Emitter, IGBT Symbol VCES VGES IC25 IC90 ICM VCEK Ptot TC = 25°C TC = 90°C VGE = 0/15 V; RG = 22 ; TVJ = 125°C RBSOA, Clamped inductive load; L = 100 uH TC = 25°C Conditions TVJ = 25°C to 150°C Maximum Ratings ± 1200 ± 20 55 35 80 600 300 V V A A A V W Features · IGBT with NPT IXYS
Original
Showing first 20 results.