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"bcy 55" Datasheet

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"bcy 55"

Catalog Datasheet MFG & Type PDF Document Tags
Abstract: 77. BCY 78. BCY 79 7 10.5 MA -9.5 , BCY77, BCY 78, BCY79 PNP Transistors for low-noise AF pre- and driver stages BCY77, BCY78 and BCY 79 are epitaxial PNP silicon planar transistors in a case 18 A 3 DIN 41876 (TO-18). The collector , driver stages as well as in complementary stages with BCY 58; BCY 59; BCY 65 E. Type Order number BCY 77 VII Q62702-C327-V1 BCY 77 VIII Q62702-C 327-V2 BCY 77 IX Q62702-C 327-V3 BCY 78 VII -
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BCY 791x zr 4.7v bcy 78 Q62702-C327 Transistor 78 L 05 1Zv transistor Q60203-Y78-G Q60203-Y78-H Q60203-Y78-J BCY78X Q60203-Y78-K Q60203-Y79-G
Abstract: AKTIENÛESELLSCHAF BCY 77, BCY 78, and BCY 79 are epitaxial PNP silicon planar transistors in TO 18 cases (18 A 3 DIN , for low noise AF input and driver stages. They can be used as complementary types to BCY 58, BCY 59, and BCY 65 E. BCY 77 BCY 78 -BCY 79 Type Ordering code BCY 77 Q62702-C327 BCY 77 VII Q62702-C327-V1 BCY 77 VIII Q62702-C327-V2 BCY 77 IX Q62702-C327-V3 BCY 78 Q60203-Y78 BCY 78 VII Q60203-Y78-G BCY 78 VIII Q60203-Y78-H BCY 78 IX Q60203-Y78-J BCY 78 X Q60203-Y78-K BCY 79 Q60203-Y79 BCY 79 VII -
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bcy 79 QQ0432S Q60203-Y79-H Q60203-Y79-J Q0Q432 QQQM331
Abstract: NPN SILICON TRANSISTOR TRANSÌSTOR NPN SILICIUM *BCY 58 BCY59 Compi, of BCY 78 and BCY 79 à , amplification 32 V BCY 58 VCEO 45 V BCY 59 'c 200 mA Maximum power dissipation Dissipation de puissance , (Unlessotherwisestated) VALEURS LIMITES ABSOLUES D'UTILISATION amt) ¡Sauf Indications contraires) BCY 58 BCY 58 , SEMCOWUCTEIJRS 45 J BCY 58, BCY 59 STATIC CHARACTERISTICS t , = 25°C (Unless otherwise stated , . Collector-emitter cut-off current Courant résidu«! collecteur-émetteur vce=32v vBE=o 'ces bcy 58 0,2 10 nA vce -
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BCY 59 SCHEMA
Abstract: BCY 77, BCY 78, BCY79 PNP Transistors for low-noise AF pre- and driver stages BCY77, BCY78 and BCY 79 are epitaxial PNP silicon planar transistors in a case 18 A 3 DIN 41876 (TO-18). The collector , driver stages as well as in complementary stages with BCY 58; BCY 59; BCY 65 E. Type Order number BCY 77 VII Q62702-C327-V1 BCY 77 VIII Q62702-C 327-V2 BCY 77 IX Q62702-C 327-V3 BCY 78 VII Q60203-Y78-G BCY 78 VIII Q60203-Y78-H BCY 78 IX Q60203-Y78-J BCY78X Q60203-Y78-K BCY 79 VII Q60203-Y79-G -
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BCY77VII BCY77VIII
Abstract: o. >- £ ÃJ IL JC > (0 LÃJ U > i) < a NF (dB) M zn S I- LI. a. n o o (SU) uoJ (su) PACKAGE BCY 58 NPN 32 0.1-200 80/520 0.12 10 2 200 3.5 85 480 T0-18 BCY 59 NPN 45 0.1-200 80/360 0.12 10 2 200 3.5 85 480 T0-18 BCY 70 PNP 40 0.01-100 50/150 0.14 10 6 400 2 48 320 T0-18 BCY 71 PNP 45 0.01-100 100/200 0.14 10 2 350 2 â'" T0-18 BCY 72 PNP 25 0.01-100 50/150 0.14 10 6 350 2 48 320 T0-18 BCY 77 PNP 60 0.01-200 80/260 0.12 10 2 180 4.5 85 480 T0-18 BCY 78 PNP 32 0.01-200 80/520 0.12 10 2 180 4.5 85 -
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BFR16 BFR18 BFW43 BFW44 BFX38 BFX39 BFX90 bfx74a BFX41 BFX40 T0-39
Abstract: ns f, fon 55 (< 150) ns U 250 200 450 ( , BCY 58, BCY 59, BCY 65 E (~2 N 2483) NPN Transistors for AF prestages, driver stages and switching applications BCY 58, BCY 59 and BCY 65 E are silicon planar NPN epitaxial transistors in a case , particularly suited to AF prestages driver stages and switching applications. Type Order number BCY 58 VII BCY 58 VIII BCY 58 IX BCY 58X BCY 59 VII BCY 59 VIII BCY 59 IX BCY 59 X BCY 65 EVII BCY 65 E VIII BCY -
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Q60203-Y58-G Q60203-Y58-J Q60203-Y58-K Q60203-Y59-J Q60203-Y59-K Q60203-Y65-E8 65e7 BCY65 bcy58 Q60203-Y
Abstract: o. >- £ ÃJ IL JC > (0 LÃJ U > i) < a NF (dB) M zn S I- LI. a. n o o (SU) uoJ (su) PACKAGE BCY 58 NPN 32 0.1-200 80/520 0.12 10 2 200 3.5 85 480 T0-18 BCY 59 NPN 45 0.1-200 80/360 0.12 10 2 200 3.5 85 480 T0-18 BCY 70 PNP 40 0.01-100 50/150 0.14 10 6 400 2 48 320 T0-18 BCY 71 PNP 45 0.01-100 100/200 0.14 10 2 350 2 â'" T0-18 BCY 72 PNP 25 0.01-100 50/150 0.14 10 6 350 2 48 320 T0-18 BCY 77 PNP 60 0.01-200 80/260 0.12 10 2 180 4.5 85 480 T0-18 BCY 78 PNP 32 0.01-200 80/520 0.12 10 2 180 4.5 85 -
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BCY 68 BFR 450
Abstract: BCY58 BCY59 BCY 65 E BCY 58, BCY 59, and BCY 65 E are epitaxial NPN silicon Planartransistors in T018 , AKTIENGESELLSCHAF Type Ordering code BCY 58 Q60203-Y58 BCY 58 VII Q60203-Y58-G BCY 58 VIII Q60203-Y58-H BCY 58 IX Q60203-Y58-J BCY 58 X Q60203-Y58-K BCY 59 Q60203-Y59 BCY 59 VII Q60203-Y59-G BCY 59 VIII Q60203-Y59-H BCY 59 IX Q60203-Y59-J BCY 59 X Q60203-Y59-K BCY 65 E Q60203-Y65-S2 BCY 65 E VII Q60203-Y65-E7 BCY 65 E VIII Q60203-Y65-E8 BCY 65 E IX Q60203-Y65-E9 e b c Approx. weight 0.3 g 2.5WH3 Dimensions -
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BCY 85 T018 200-C
Abstract: 5SC D â  Ã»53SbOS G00432S 7 «SIEG r . y"¿Cj.^S PNP Silicon Planar Transistors BCY 77 25C 04325 D ;_B£XZ5 -BCY 79 SIENENS AKTIEN6ESELLSCHAF BCY 77, BCY 78, and BCY 79 are epitaxial PNP , be used as complementary types to BCY 58, BCY 59, and BCY 65 E. Type Ordering code BCY 77 Q62702-C327 BCY 77 VII Q62702-C327-V1 BCY 77 VIII Q62702-C327-V2 BCY 77 IX Q62702-C327-V3 BCY 78 Q60203-Y78 BCY 78 VII Q60203-Y78-G BCY 78 VIII Q60203-Y78-H BCY 78IX Q60203-Y78-J BCY 78 X Q60203-Y78-K -
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78-IX C327 bcy77 siemens 0Q0M331
Abstract: N PN-Transistoren für NF-Vor- und Treiberstufen BCY 58 sowie Schalteranwendungen BCY 59 -BCY 65 E BCY 58, BCY 59 und BCY 65 E sind epitaktische NPN-Silizium-Planar-Transistoren im Gehäuse , BCY 58 VII Q60203- -Y58- -G BCY 58 VIII Q60203- -Y58- -H BCY 58 IX Q60203- -Y58- -J BCY 58 X Q60203- -Y58- -K BCY 59 VII Q60203- -Y59- -G BCY 59 VIII Q60203- -Y59- -H BCY 59 IX Q60203- -Y59- -J BCY 59 X Q60203- -Y59- -K BCY 65 E VII Q60203- -Y65- -E7 BCY 65 E VIII Q60203- -Y65- -E8 BCY 65 E IX -
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BCY 12 BCY 58 Ucesat Y59 r 120
Abstract: :/B2 «s 100:10:10 mA; /?, = 500 ü; fd 5 ns fr 50 ns fein 55 (< 150) ns BCY 77 Arbeitspunkt: /C:/bi , PIMP-Transistoren für rauscharme NF-Vor- und BCY 77 Treiberstufen BCY 78 -BCY 79 BCY 77; BCY 78; BCY 79 sind epitaktische PNP-Silizium-Plariar-Transistoren im Gehäuse 18 A3 DIN 41 876 (TO-18). , rauscharme NF-Vor- und Treiberstufen sowie komplementär zu BCY 58; BCY 59; BCY 65 E verwendbar. Typ Bestellnummer BCY 77 VII Q62702- -C327-V1 BCY 77 VIII Q62702- -C327-V2 BCY 77 IX Q62702- -C327-V3 BCY 78 -
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Abstract: PNP-Transistoren für rauscharme NF-Vorstufen BCY 67 BCY 67 ist ein epitaktischer , Transistor ist besondersfür rauscharme NF-Vorstufen verwendbar (Komplementärtransistoren dazu BCY 66). Typ BCY 67 Bestellnummer Q62702-C254 00,1(5 -13,5±1- -5,2. "f vr Gewicht etwa 0,3 g E B G 2,5Uo , (0,55 bis 0,7) 1 10 120 bis 10001) 0,7 Kollektor-Emitter-Sättigungsspannung (7C = 10 mA; IB = 0,25 , BCY 67 Statische Kenndaten (Tu = 25 °C) Kollektor-Emitter-Reststrom (-t/CES = 35 v) 7c ES 2 (< 20 -
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AS5V 10ZKH
Abstract: BCY78 SILICON PLANAR PNP BCY 79 LOW-NOISE AUDIO AMPLIFIERS The BCY 78 and BCY 79 are silicon , low-noise input stages. The complementary NPN types are respectively the BCY 58 and BCY 59. ABSOLUTE MAXIMUM RATINGS BCY 78 BCY 79 VCES Collector-emitter voltage (VBE = 0) -32 V -45 V VCEO , Test conditions Min. Typ. Max. Unit 'ces Collector cutoff current (VBE =: 0) for BCY 78 VCE =-25V Vce =-32V VCE=-25V Tamb = 150°C for BCY 79 VCE = -35V VCE =-45V Vqe = -35V Tamb = 150°C -2 -20 -100 -10 -2 -
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1B57 G-1B57 G-1860
Abstract: MICRO BCY58 BCY 59 GENERAL DESCRIPTION : The BCY 58 and BCY 59 are NPN silicon planar , , CES GEO EBO ELECTRICAL CHARACTERISTICS @ BCY 58 BCY 59 39QaW 390mW 1W 1W 200*C 200®C -65®C , otherwise statedQ parameter symbol bcy 58 min typ max BCI 59 min typ max unit test conditions , , Microtron Building, Kwun Tong, Kowloon, Hong Kong. X.I. OÃO A104 R - continue 1 BCY 58 BCY 59 , BCY 5ÃA BCY 59A MIN MAX BCY 58B BCY 59B MIN MAX BCY 58C BCY 59C MIN MAX BCY 58D BCY 59D MIN MAX -
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TRANSISTOR A104 A104 A104 transistor Transistor BCY58 100MH VCB-10V BWW200HZ R2-700
Abstract: 2SC D â  Ã¶23Sb05 GGQMBOb NPN Silicon Planar Transistors I SIEG 25C 04306 D BCY58 BCY59 BCY 65 E BCY 58, BCY 59, and BCY 65 E are epitaxial NPN silicon Planartransistors in T018 cases (18 A 3 DIN , Ordering code BCY 58 Q60203-Y58 BCY 58 VII Q60203-Y58-G BCY 58 VIII Q60203-Y58-H BCY 58 IX Q60203-Y58-J BCY 58 X Q60203-Y58-K BCY 59 Q60203-Y59 BCY 59 VII Q60203-Y59-G BCY 59 VIII Q60203-Y59-H BCY 59 IX Q60203-Y59-J BCY 59 X Q60203-Y59-K BCY 65 E Q60203-Y65-S2 BCY 65 E VII Q60203-Y65-E7 BCY 65 E VIII -
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0431I QQQ430
Abstract: Dimensions in mm Collector connected to case (sim. to TO-18) 55 7/76 BCY58 BCY 59 THERMAL DATA 'th , BCY58 SILICON PLANAR NPN BCY 59 LOW-NOISE AUDIO AMPLIFIERS The BCY58 and BCY59 are silicon , stages, driver stages and low-noise input stages. The complementary PNP types are respectively the BCY 78 and !BCY 79. ABSOLUTE MAXIMUM RATINGS BCY 58 BCY 59 VCES Collector-emitter voltage (VBE = 0) 32 V 45 , = 10 mA 1B= 0.25 mA lc = 100 mA lB = 2.5 mA 0.6 0.7 0.85 0.75 0.9 1.2 V V 56 BCY 58 BCY 59 -
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BcY591
Abstract: BCY78 BCY79 SILICON PLANAR PNP LOW-NOISE AUDIO AMPLIFIERS The BCY 78 and BCY 79 are silicon , low-noise input stages. The complementary NPN types are respectively the BCY 58 and BCY 59. ABSOLUTE MAXIMUM RATINGS BCY 78 BCY 79 VcES Collector-emitter voltage (VBE = 0) -32 V -45 V VcEO , . Unit 'ces Collector cutoff current (VBE = 0) for BCY 78 VCE =-25V VCE =-32V Vce=-25V Tamb = 150°C for BCY 79 VCE =-35V VCE = -45V Vce = -35V Tamb = 15CI°C -2 -20 -100 -10 -2 -20 -100 -10 nA nA pA nA nA M -
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Abstract: PNP SILICON TRANSISTOR TRANSISTOR PNP SILICIUM BCY 78 BCY 79 Compi, of BCY 58 and BCY 59 - Switching and amplifier Commutation et amplification -32 V BCY 78 VCEO -45 V BCY 79 »C -200 mA , +25 °C (Unless otherwise stated) (Sauf indicetions con trairesl bcy 78 bcy 79 Collector-emitter , ©rature de stockage max. Tstg - 65 +200 °C °C 76-15 1/7 465 BCY 78, BCY 79 STATIC CHARACTERISTICS , ©siduel collecteur-émetteur Vce = -25V VBE= 0 'ces BCY 78 -20 nA VCE = -32 V VBE = ° -100 Vce = -
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Abstract: o. >- £ ÃJ IL JC > (0 LÃJ U > i) < a NF (dB) M zn S I- LI. a. n o o (SU) uoJ (su) PACKAGE BCY 58 NPN 32 0.1-200 80/520 0.12 10 2 200 3.5 85 480 T0-18 BCY 59 NPN 45 0.1-200 80/360 0.12 10 2 200 3.5 85 480 T0-18 BCY 70 PNP 40 0.01-100 50/150 0.14 10 6 400 2 48 320 T0-18 BCY 71 PNP 45 0.01-100 100/200 0.14 10 2 350 2 â'" T0-18 BCY 72 PNP 25 0.01-100 50/150 0.14 10 6 350 2 48 320 T0-18 BCY 77 PNP 60 0.01-200 80/260 0.12 10 2 180 4.5 85 480 T0-18 BCY 78 PNP 32 0.01-200 80/520 0.12 10 2 180 4.5 85 -
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UOJ 220 BFX97 BFR21 BFX95A BFX97A 15/2N 16/2N 17/2N
Abstract: N PN-Transistor für rauscharme IMF-Vorstufen BCY 66 BCY 66 ist ein epitaktischer , Transistor ist für besonders rauscharme NF-Vorstufen vorgesehen. (Komplementärtransistor dazu BCY 67). Typ Bestellnummer BCY 66 Q60203-Y66 0OA5 â'"â 13,5 ±1- "â'¢5,2-02*" Gewicht etwa 0,3 g E B C 2>±o,3 MaÃe , Kenndaten (7\j = 25 °C) Ua Ic B U BE V mA Ic/h V 5 0,01 > 40 0,5 5 2 350 (180 bis 630) 0,62 (0,55 bis 0 , obere Grenze gilt für mindestens 90% aller Transistoren â'¢) AOL = 0,65% 237 BCY 66 Statische -
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transistor buv 90
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