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PMP8008 Texas Instruments The best compatability with E-Transfomer for 5W MR16 application
OMAP1610 Texas Instruments Applications Processor
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"an5296 Application of the CA3018"

Catalog Datasheet MFG & Type PDF Document Tags
Abstract: for maximum flexibility. The transistors of the CA3018 and the CA3018A are well suited to a wide variety of applications in low power systems in the DC through VHF range. They may be used as discrete , "Application of the CA3016 Integrated Circuit Transistor Array" for Suggested Applications , lîC T -GA3018, CA3018A Général Purpose Transistor Arrays Description The CA3018 and CA3018A consist of four general purpose silicon NPN transistors on a common monolithic substrate. Two of the four -
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AN5296 Application note CA3018 12 Pin Metal Can an5296 AN5296 application note an5296 ca3018 120MH AN5296
Abstract: "Application of the CA3018 Integrated Circuit Transistor Array" for Suggested Applications · Custom , Features The CA3018 and CA3018A consist of four general purpose silicon NPN transistors on a common monolithic substrate. · Matched Monolithic General Purpose Transistors Two of the four transistors are , transistors of the CA3018 and the CA3018A are well suited to a wide variety of applications in low power , collector of each transistor of the CA3018 and CA3018A is isolated from the substrate by an integral diode Harris Semiconductor
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Darlington pair IC Harris CA3018 Darlington pair AN5296 Application of the CA3018 AN-529 500MH
Abstract: , see companion Application Note AN5296 "Application of the CA3018 Integrated Circuit Transistor Array , transistors with two of the transistors connected to form a differentially connected pair. These types are , versions of the popular predecessor type CA3046.) Types CA3183A and CA3183 consist of five high current , and CA3183 are high voltage versions of the popular predecessor type CA3083.) The types with an "A" , Transistor Arrays Description The CA3146A, CA3146, CA3183A, and CA3183 are general purpose high voltage -
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CA3146M m14 transistor 3183a CA31B MAKING LD CA31B3A CA31B3 CA3146AE CA3146AM CA3146E
Abstract: , AN5296 ``Application of the CA3018 Integrated Circuit Transistor Array" for Suggested Applications , Capacitance NOTE: 1. The collector of each transistor of the CA3018 and CA3018A is Isolated from the substrate , transistors on a com m on monolithic substrate. Two of the lour transistors are connected in the Darlington , the C A 3 0 1 8 and the C A 3 0 1 8 A are well suited to a wide variety of applications in low power , circuits but in addition they provide the advantages of close electrical and thermal m atching inherent in -
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ca301b ba qz transistor CA3Q18
Abstract: Note AN5296 "Applications of the CA3018 Circuit Transistor Array" for Suggested Applications PART , Current NPN Transistor Array Description 100mA (Max) The CA3083 is a versatile array of five high current (to 100mA) NPN transistors on a com m on m onolithic substrate. In addition, two of these , are of special importance. Independent connections for each transistor plus a separate terminal for the substrate perm it maxim um flexibility in circuit design. Features · High lc -
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an5296 applications note CA3083 amplifier Transistor Array differential amplifier CA3083F CA3083M CA3083M96
Abstract: Temperature Compensated Amplifiers · See Application Note, AN5296 "Application of the CA3018 , The CA3086 consists of five general-purpose silicon NPN transistors on a common m onolithic substrate. Two of the transistors are internally connected to form a differentially connected pair. The transistors of the CA3086 are well suited to a wide vari ety of applications in low-power system s at , , they also provide the very significant inherent advantages unique to integrated circuits, such as -
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harris 3086 CA3086 APPLICATION NOTE Application note CA3086 Application of the CA3086 application note an5296 t 3086 190MH CA3086M CA3086M96 CA3086F
Abstract: See Application Note, AN5296 "Application of the CA3018 Integrated Circuit Transistor Array" for , General Purpose Transistors The CA3018 and CA3018A consist of four general purpose silicon NPN , . . . . . . . . . . . . . . . . . . . . . . . . . . . . ±5mV The transistors of the CA3018 and , of this specification is not implied. NOTES: 1. The collector of each transistor of the CA3018 , . . . . . . . . . .±10% Two of the four transistors are connected in the Darlington Harris Semiconductor
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free Darlington pair IC Darlington Transistor Array Monolithic Transistor Pair
Abstract: Description · Matched Monolithic General Purpose Transistors The CA3018 and CA3018A consist of four , transistors of the CA3018 and the CA3018A are well suited to a wide variety of applications in low power , of the CA3018 Integrated Circuit Transistor Array" for Suggested Applications Pinout CA3018 , each transistor of the CA3018 and CA3018A is isolated from the substrate by an integral diode. The , . . . . . . . . . . . . . . . . . . . . . . . . . . . .±10% Two of the four transistors are Harris Semiconductor
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Abstract: Application Note, AN5296 "Application of the CA3018 Integrated Circuit Transistor Array" for Suggested , Collector-to-Substrate Capacitance NOTE: 1. The collector of each transistor of the CA3018 and CA3018A is isolated from , O R CA3018 General Purpose Transistor Arrays Description The CA3018 and CA3018A consist o f , . ±10% · VBE Matched - CA3018A. ±2mV - CA3018 , Transistor Pair for Low Power Applications at Frequencies from DC through the VHF Range · Custom Designed -
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transistor d2271 D2271 43DE271
Abstract: Amplifiers â'¢ Temperature Compensated Amplifiers â'¢ See Application Note, AN5296 "Application of the , for maximum flexibility. The transistors of the CA3018 and the CA3018A are well suited to a wide variety of applications in low power systems in the DC through VHF range. They may be used as discrete , CA3018, CA3018A oatt'-^â'"â â'" General Purpose Transistor Arrays The CA3018 and CA3018A consist of four general purpose silicon NPN transistors on a common monolithic substrate. Two of the four -
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Abstract: Note, AN5296 "Application of the CA3018 Integrated-Clrcult Transistor Array" for Suggested Applications , substrate. Two of the transistors are internally connected to form a differentially connected pair. The transistors of the CA3045 and CA3046 are well suited to a wide variety of applications in low power systems in , , in addition, they provide the very significant inherent integrated circuit advantages of close , 33 HA«TM® November 1996 CA3045, CA3046 General Purpose NPN Transistor Arrays Description The -
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d143 T transistor CA3046 NPN differential pair transistor matched transistors CA3045F CA3046M CA3046M96 14U1SBDIP A3046
Abstract: Amplifier · Temperature Compensated Amplifier · Thyristor Firing · See Application Note AN5296 "Applications of the CA3018 Circuit Transistor Array" for Suggested Applications Ordering Information PART , Transistor Array The CA3083 is a versatile array of five high current (to 100mA) NPN transistors on a common , permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied Harris Semiconductor
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4814 soic transistor oc 76
Abstract: · See Application Note, AN5296 "Application of the CA3018 Integrated Circuit Transistor Array" for , . Two of the four transistors are connected in the Darlington configuration. The substrate is connected to a separate terminal for maximum flexibility. The transistors of the CA3018 and the CA3018A are , is similar to the CA3018 but features tighter control of current gain, leakage, and offset parameters , CA3018, CA3018A January 1999 File Number 338.5 General Purpose Transistor Arrays The CA3018 -
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Abstract: Temperature Compensated Amplifier · Thyristor Firing · See Application Note AN5296 "Applications of the CA3018 , N-P-N Transistor Array Description The CA3083 is a versatile array of five high current (to 100mA) n-p-n transistors on a common monolithic substrate, in addition, two of these transistors (Q1 and Q2 , to the device. This is a stress onJy rating and operation of the device a t these or any other , Current (Figure 7) NOTE: 1. The collector of each transistor of the CA30B3 is Isolated trom the substrate -
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Abstract: Amplifier · Thyristor Firing · See Application Note AN5296 "Applications of the CA3018 Circuit Transistor , Current N-P-N Transistor Array Description The CA3083 is a versatile array of five high current (to 100mA) n-p-n transistors on a common monolithic substrate, in addition, two of these transistors (Q, and , ) Absolute Input Offset Voltage (Figure 6) Absolute Input Offset Current (Figure 7) NOTE: 1. The collector of each transistor of the CA3083 is isolated from the substrate by an integral diode. The substrate must -
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DG470D 43GE571 00470G7
Abstract: Compensated Amplifier · Thyristor Firing · See Application Note AN5296 "Applications of the CA3018 Circuit , Transistor Array Description The CA3083 is a versatile array of five high current (to 100mA) NPN transistors on a common monolithic substrate. In addition, two of these transistors (Q i and Q2) are matched at low current (i.e., 1mA) for applications m which offset parameters are of special importance , plus a separate terminal for the substrate permit maximum flexibility in circuit PlusSeparate Substrate -
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3083F 3083M
Abstract: perature Com pensated Amplifier · Thyristor Firing · See Application Note AN5296 "Applications of the , the o pe ra tio na l section s o f this specification is n o t im plied. NOTES: 1. The collector of each transistor of the CA3083 is isolated from the substrate by an integral diode. The substrate must , Purpose High Current NPN Transistor Array Description T h e C A 3 0 8 3 is a vers a tile array of five , of th e s e transistors (Q 1 and Q 2 ) a re m a tc h e d a t low c u rren t (i.e ., 1m A ) for app -
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77G DIODE
Abstract: Temperature Compensated Amplifiers · See Application Note, AN5296 "Application of the CA3018 , Description The CA3086 consists of five general-purpose silicon NPN transistors on a common monolithic substrate. Two of the transistors are internally connected to form a differentially connected pair. The transistors of the CA3086 are well suited to a wide vari ety of applications in low-power systems at , sections o f this specification is n ot implied. NOTES: 1. The collector of each transistor in the -
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lg 15.6 pinout
Abstract: Amplifiers · See Application Note, AN5296 "Application of the CA3018 Integrated-Circuit Transistor Array , of the transistors are internally connected to form a differentially connected pair. The transistors of the CA3086 are well suited to a wide vari ety of applications in low-power systems at frequencies , UNITS V V V V nA (iA CO 1. The collector of each transistor in the CA3086 is isolated from the , 43 DS5 71 l 470Dô HiHAS (*A 'iORfi General Purpose N-P-N Transistor Array Description The -
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Harris CA3086 43Q2271
Abstract: ) -55 to 125 16 Ld SOIC (Pb-Free) M16.15 Tape and Reel · See Application Note AN5296 "Applications of the CA3018 Circuit Transistor Array" for Suggested Applications NOTE: Intersil Pb-free plus , Array FN481.5 Features The CA3083 is a versatile array of five high current (to 100mA) NPN , that meet or exceed the Pb-free requirements of IPC/JEDEC J STD-020. Pinout CA3083 (PDIP, SOIC , other trademarks mentioned are the property of their respective owners. CA3083 Absolute Maximum -
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CA3083MZ CA3083MZ96 3083MZ
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