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ISL73096RHVX Intersil Corporation RF POWER TRANSISTOR
ISL73127RHVF Intersil Corporation RF POWER TRANSISTOR
ISL73128RHVF Intersil Corporation RF POWER TRANSISTOR
ISL73096RHVF Intersil Corporation RF POWER TRANSISTOR
TIL604HR2 Texas Instruments Photo Transistor, PHOTO TRANSISTOR DETECTOR
HFA3102B96 Intersil Corporation C BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR, MS-012AB, MS-012AB, 14 PIN

"MC 140" transistor

Catalog Datasheet MFG & Type PDF Document Tags
Abstract: 15 Twin Transistors, Mixed & Matched Die 16 Silicon Transistor Chips 16 , bypass path LNAs +20 dBm GaAs RFIC: Low cost version of UPG2253, miniature pkg MMIC & Transistor , : 35.5 dBm POUT typ 4 NE664M04 0.4 Watt Silicon Bipolar Transistor Driver 4 NE5520279A LDMOS FET: 32 dBm POUT typ 4 NESG2101M05 120 mW SiGe Bipolar Transistor Driver 4 4 4 4 4 4 4 4 4 , Transistor LNAs (Performance @ 1GHz) 450 MHz UPD5740T6N Wideband CMOS LNA IC with bypass for mobile DTV 4 California Eastern Laboratories
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SMD transistor M05 smd TRANSISTOR code m05 wy smd transistor UPD5740 NE66200 TRANSISTOR m05 smd 10/2M
Abstract: HIGH FREQUENCY SILICON MAXIMUM RATINGS at 25"C unless specified POWER TRANSISTOR _ 3TX002 3TX003 3TX004 BVCBO 100 v 100 v 60 v BVCES 80 v 80 v 50 v BVEBO 5 v 5 v 3 v lc ! 5 a 5 a 5 a 60 w 45 w 45 w Rr US |gl 2.5°C/w 3.3°C/w 3.3°C/w Safe Operating Region SEE GRAPHS Temperature-Storage â'"65 to 200 °C -65 to 200°C -65 to 200°C Temperature-Operating â'"65 to 175°C â'"65 to 175°C â'"65 to 175 , notification. .723 .732 .312 MIN. .390 MAX. .427 .212 .433 .218 J_L. HIGH FREQUENCY SILICON POWER TRANSISTOR -
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MC 150 transistor MC 140 transistor transistor mc 140 433 Mc
Abstract: File No. 50 ^ RF Power Transistors Solid State Division 2N3229 RCA-2N3229 is a triple-diffused planar transistor of the silicon n-p-n type. This device is intended for applications in AM, FM, and CW service at frequencies up to 150 Mc. The 2N3229 utilizes a new stud-mounted package which is electrically isolated from all the electrodes and is designed to provide excellent performance at very high , , VEQ0. . 105 max. volts 60 max. volts 105 max. volts 4 max. vol ts 2. 5 max. amperes TRANSISTOR -
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transistor a200 RCA TO60 TRANSISTORS 150-M I2045AS 01AMETER
Abstract: uPa2003 micro servo 9g . 133 Analog Master . 134 ­i­ 6. Transistor , . 235 Transistor . 170 Surface Mount , /Application . 180 Field Effect Transistor , . 189 Transistor with Internal Resistor . 196 Transistor for Array . 200 Transistor Array . 201 Zener Diode NEC
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201 Zener diode uPD72123 infrared sensor TSOP - 1836 2pin 4 MHz crystal Small DIP 2SC4333 NEC 10F triac V20HL V25HS V30HL V30MX V35HS V40HL
Abstract: C&C for Human Potential Microcomputer 1 SEMICONDUCTOR SELECTION GUIDE GUIDE BOOK IC Memory 2 Semi-Custom IC 3 Particular Purpose IC 4 General Purpose Linear IC 5 Transistor / Diode / Thyristor 6 Microwave Device / Consumer Use High Frequency Device 7 Optical Device 8 Packages 9 Index (Quick Reference by Type Number) 10 Oct. 1995 Microcomputer 4-Bit Single Chip Microcomputer Microcomputer 1 4-Bit Single Chip Microcomputer . 2 NEC
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uPC2002 uPC2581 uPA67C uPB582 uPC317 2P4M PIN DIAGRAM PD7500 PD1700 PD6133 8/16-B S-18322 699499F
Abstract: Transistor Chips 12 Oscillator Transistors 12 Switching Transistors 12 , Transistor Power Amplifiers 450 MHz 915 MHz 2.4 GHz UPG2118K + 31.5 dBm Three Stage GaAs MMIC , NE5520379A 3 watt LDMOS FET: 35.5 dBm POUT typ NE664M04 0.4 Watt Silicon Bipolar Transistor Driver , 5 - 6 GHz 120 mW SiGe Bipolar Transistor Driver Medium & High Power GaAs RFIC Switches , www.cel.com/rf Front End Components for UHF to 2.5 GHz continued MMIC & Transistor LNAs (Performance @ 1 California Eastern Laboratories
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NE5531 SMD M05 sot23 2013/4M
Abstract: Controllers Features: Description: · Linear Charge Management Controller: - Integrated Pass Transistor , PROG Floating Pass Transistor ON-Resistance ON-Resistance Battery Discharge Current Output , positive terminal of battery. Drain terminal of internal P-channel MOSFET pass transistor. Bypass to VSS , would discharge the battery pack through the body diode of the internal pass transistor , Microchip Technology Inc. MCP73831/2 5-Lead Plastic Small Outline Transistor (OT) (SOT-23) E E1 Microchip Technology
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MCP73831 MCP73832 aaf marking sot23-5 MCP7383X-2 MCP7383X-5 DS21984B-
Abstract: . 106 Transistor . 149 MV Series , · TO-92 Type Transistor . 150 Analog Master . 116 · SST Type Transistor . 151 · SP-8 Type Transistor . 152 Particular Purpose IC . 117 · MP-3 Type Transistor . 153 · MP-5 (TO-126) Type Transistor . 153 Speech Synthesis IC NEC
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transistor 2p4m TRANSISTOR SOD MARKING CODE 352A Zener diode marking code N4L Z80TM V20TM V20HLTM V25TM V25HSTM V30TM
Abstract: Features: Description: · Linear Charge Management Controller: - Integrated Pass Transistor - , Complete mA Pass Transistor ON-Resistance ON-Resistance Battery Discharge Current Output Reverse , terminal of internal P-channel MOSFET pass transistor. Bypass to VSS with a minimum of 4.7 F to ensure , through the body diode of the internal pass transistor. 6.1.1.5 Placing a programming resistor from , -Lead Plastic Small Outline Transistor (OT) (SOT-23) E E1 p B p1 n D 1 c A L Microchip Technology
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aae DFN marking MCP73831T MCP73831-4 Li-ion charger controller sot23-5 marking AAG C04 SOT23 DS21984A-
Abstract: Controllers Features Description: · Linear Charge Management Controller: - Integrated Pass Transistor , 0.15 2 uA PROG Floating Pass Transistor ON-Resistance ON-Resistance Battery Discharge , pass transistor. Bypass to VSS with a minimum of 4.7 uF to ensure loop stability when the battery is , internal pass transistor. DS21984D-page 14 Charge Inhibit The current regulation set input pin , Dual-Flat, No-Lead (2x3 mm body), 8-Lead = Small Outline Transistor (SOT23), 5-Lead a) b) c) d) a) b Microchip Technology
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SOT23 marking code AAR 2ati MCP7383X microchip application notes MP3 DS21984D-
Abstract: Controllers Features Description: · Linear Charge Management Controller: - Integrated Pass Transistor , 0.15 2 uA PROG Floating Pass Transistor ON-Resistance ON-Resistance Battery Discharge , pass transistor. Bypass to VSS with a minimum of 4.7 uF to ensure loop stability when the battery is , would discharge the battery pack through the body diode of the internal pass transistor , Outline Transistor (SOT23), 5-Lead d) a) b) c) d) a) b) c) d) MCP73831-2ACI/OT: 4.20V VREG Microchip Technology
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3DG 130 aae sot-23 marking AAK marking code JC51-7 DS21984C-
Abstract: 1823-K MCP73831-2ACI-OT -Lead Plastic Small Outline Transistor (OT) (SOT-23) E E1 p B p1 n D 1 c A L , body), 8-Lead = Small Outline Transistor (SOT23), 5-Lead a) b) c) d) a) b) c) d) a) b) c Microchip Technology
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MCP73862 AAG EEPROM 2ac SOT23-5 mosfet 4433 MCP7383X-4 MC TRANSISTOR SOT23 DS21984B
Abstract: File No. 42 RF Power Transistors Solid State Division 2N3118 RCA-2N3118 is a triple-diffused planar transistor of the silicon n-p-n type intended for use in RF amplifiers in military and industrial HF and VHF communication equipment. It is designed especially for large-signal Class-C and small-signal Class-A service. Maximum Ratings, Absolute-Maximum. Values: Collector-to-Emitter Voltage: Reverse , ^' â'¢ 4 max. Collector Current (Iq). 0.5 max. Transistor Dissipation (Pf): At case temperatures -
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150 watt hf transistor 12 volt 300 watt hf transistor 12 volt 100 watt hf transistor 12 volt 1000 watt hf transistor 12 volt SSF 4606 4 watt VHF 92CS-I2276
Abstract: Purpose IC 4 General Purpose Linear IC 5 Transistor/Diode/Thyristor 6 Microwave Device , . 174 ­i­ 6. Transistor/Diode/Thyristor . 175 9. Packages . 239 Transistor . 176 · Quick Reference , . 186 Field Effect Transistor . 192 · Small Signal FET . 192 · Power MOS FET . 195 Transistor with Internal Resistor NEC
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sc5 s dc 6v relay uPD7520 753XX VR10000 Series equivalent PNP for BUZ 90 transistor ESM 740 V50HL V55PI VR4100 VR4101 VR4102 VR4300
Abstract: N AMER PHILIPS/DISCRETE ObE 3> â  bb53131 0014714 1 â  PowerMOS transistor " BUZ385 " T- May 1987 GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic , transistor BUZ385 . T-39-13 RATINGS Limiting values in accordance with the Absolute Maximum System (IEC , GOmTIb 5 PowerMOS transistor BUZ38S T-39-13 REVERSE DIODE RATINGS AND CHARACTERISTICS Tmb = 25 °C , N AMER PHILIPS/DISCRETE PowerMOS transistor ObE » bLSBTBl ODIM?11)? 7 BUZ385 T-39-13 140 W -
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T0218AA
Abstract: MC1560, MC1561 MC1460, MC1461 . IC lOLITHI : JOLlà 2E RE 31 . TÃR , , . designed to deliver continuous load current up to 500 mA without use of an external power transistor. « Electronic "Shut-Down" Control and Short-Circuit Protection " Excellent Load Regulation (Low Output lmpedance = 20milliohms typ , Temperature Stability e High Ripple Rejection = 0.002 %/V typ Single External Transistor Can Boost Load , specified application). FIGURE 24 - THERMAL SHUTDOWN WHEN USING EXTERNAL PASS TRANSISTOR (+20 V) â'¢+v0 -
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MC1460r 2N3055 series voltage regulator 2n3055 voltage regulator MC1560R Motorola Mc 1461 MC1560G MC1560/MC1561 MC1460/MC1461 DDA104 TG-P10 66B1-77U
Abstract: incorporates positive feedback by coupling the base of transistor Q7 to the collector of Q8. An automatic gain , oscillator, and provide high spectral purity at the output, a cascode transistor (Q4) is used to translate , with output transistor Q1, provide a highly buffered output which produces a square wave. Transistors , feedback by coupling the base of transistor Q7 to the collector of Q8. An automatic gain control (AGC) is , spectral purity at the output, a cascode transistor (Q4) is used to translate from the emitter follower (Q5 -
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MC1651 MC1650 MC1600 MC1648 MC1648 equivalent motorola application notes an532a AN-532a MC1648 internal schematic
Abstract: ) MILITARY SPECIFICATION SEMICONDUCTOR DEVICE; TRANSISTOR, PNF GERMANIUM, LOW POWER TYPE 2N1142 This spà , transistor. 1. 2 Physical dimensions. See figure 1 (modified TO-39). 1. 3 Ratings. See table I. TABLE I , -19500. 3= 3 Design; construction. and physical dimensions. - Transistor shall be of the design , MIL-S-19500 may be omitted from the body of the transistor at the option of the manufacturer: (a , mmho at the transistor with minimum losses. 5. PREPARATION FOR DELIVERY 5.1 See MIL-S-19500, section 5 -
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MC 151 pnp MC 3041 MC 151 transistor Germanium Transistor VHF power TRANSISTOR PNP TO-39 MIL-S-19500/87A MIL-S-19500/87 MLL-S-19500/87A MIL-STD-202 MIL-STD-750
Abstract: N AMER P H I LIPS/DISCRETE QbE D PowerMOS transistor â  bbSBTBl 0014737 4 â , transistor in a plastic envelope. FREDFET* with fast-recovery reverse diode. This device is particularly , instructions for T0218AA envelopes. 473 N AMER PHILIPS/DISCRETE PowerMOS transistor DbE D â , pad 474 - N AMER PHILIPS/DISCRETE PowerMOS transistor - ObE D bbSBTBl 00147flc f i l , AMER PHILIPS/DISCRETE PowerMOS transistor ' ' ' ObE D I bbS3i31 00147T0 4 BUZ384 T -
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53T31 Q0147TS 0D14713
Abstract: Particular Purpose 4 General Purpose Linear IC 5 Transistor/Diode/Thyristor 6 GaAs Device/ Silicon , . 183 Functional Block . 184 ­i­ 6. Transistor , . 255 Transistor . 186 Surface Mount , Hole Discrete Device Packages . 278 Field Effect Transistor , . 205 Transistor with Internal Resistor . 215 Transistor for Array NEC
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lg crt monitor circuit diagram micro servo 9g samsung lcd tv power supply diagrams MP 1008 es uPa2003 8049 microcontroller APPLICATION C-17K V850/SA1 V850/SB1 V850/SB2 V850/SB3 V850E/MS1
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