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APT40SM120S Microsemi Corporation Power Field-Effect Transistor
APTMC120AM09CT3AG Microsemi Corporation Power Field-Effect Transistor
APTMC170AM30CT1AG Microsemi Corporation Power Field-Effect Transistor
APT80SM120S Microsemi Corporation Power Field-Effect Transistor
APTSM120AM09CD3AG Microsemi Corporation Power Field-Effect Transistor
APTMC120AM25CT3AG Microsemi Corporation Power Field-Effect Transistor

"Field-Effect Transistors"

Catalog Datasheet MFG & Type PDF Document Tags
Abstract: Enhancement-Mode Power Field-Effect Transistors. N-Channel Enhancement-Mode Power Field-Effect Transistors. N-Channel Enhancement-Mode Power Field-Effect Transistors. N-Channel Enhancement-Mode Power Field-Effect Transistors. N-Channel Enhancement-Mode Power MOS Field-Effect Transistors. N-Channel Enhancement-Mode Power Field-Effect Transistors. N-Channel Enhancement-Mode Power MOS Field-Effect Transistors -
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4311 mosfet transistor D 4206 TRANSISTOR transistor D 322 D 843 Transistor Power MOSFETs h a 431 transistor 2N6755 2N6756 2N6757 2N6758 2N6759 2N6760
Abstract: (L2F E T ). N-Channel Logic Level Power Field-Effect Transistors (L2F E T ). N-Channel Logic Level Power Field-Effect Transistors (L2F E T ). N-Channel Logic Level Power Field-Effect Transistors (L2F E T ). N-Channel Logic Level Power Field-Effect Transistors (L2F E T ). N-Channel Logic Level Power , Transistors (L2F E T ). N-Channel Logic Level Power Field-Effect Transistors (L2F E -
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2N6904 RFL1N10L RFP14N05L field-effect transistors 05LSM RFP8N18L transistor T 67 transistor 684 2N6901 2N6902 2N6903 RFL1N08L
Abstract: . P-Channel Enhancement-Mode Power Field-Effect Transistors. P-Channel Enhancement-Mode Power Field-Effect Transistors. P-Channel Enhancement-Mode Power Field-Effect Transistors. P-Channel Enhancement-Mode Power Field-Effect Transistors. P-Channel Enhancement-Mode Power Field-Effect Transistors (MegaFETs) . . P-Channel Enhancement-Mode Power Field-Effect Transistors. 5-90 5-95 5-100 5-105 5-110 5-115 5-120 5-125 5-130 5-135 -
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2N6897 2N6898 IRF9132 IRF9150 IRF9511 IRF9632 p12p10 IRF9530* p-channel power MOSFET IRF9530 P-channel power irf9640 mosfet RFM-10 2N6804 2N6849 2N6851 2N6895 2N6896
Abstract: Philips Semiconductors Small-signal Field-effect Transistors General S-PARAMETER , ) The transistors are supplied on tape in boxes (ammopack) or on reels. The number per reel and per ammopack is 2000. The ammopack has 80 layers of 25 transistors each. Each layer contains 25 transistors , ). 1995 Apr 27 25 Philips Semiconductors General Small-signal Field-effect Transistors Ah L -
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ULB33S
Abstract: DISCRETE SEMICONDUCTORS Package outlines Small-signal Field-effect Transistors and Diodes , Semiconductors Small-signal Field-effect Transistors and Diodes Package outlines Hermetically sealed , Semiconductors Small-signal Field-effect Transistors and Diodes Package outlines SOD323 Plastic , Small-signal Field-effect Transistors and Diodes Package outlines Plastic surface mounted package; 2 , Field-effect Transistors and Diodes Package outlines Plastic surface mounted package; 3 leads SOT23 Philips Semiconductors
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SOT54variant diodes PACKAGE DO-34 SC-88
Abstract: field-effect transistors Product specification Supersedes data of April 1995 File under Discrete , junction field-effect transistors BF556A; BF556B; BF556C FEATURES · Low leakage level (typ. 500 fA , . DESCRIPTION N-channel symmetrical silicon junction field-effect transistors in a SOT23 package. Fig , Semiconductors Product specification N-channel silicon junction field-effect transistors BF556A; BF556B , N-channel silicon junction field-effect transistors BF556A; BF556B; BF556C DYNAMIC CHARACTERISTICS -
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MRC149 MRC147 mrc150 MRC142 MRC144 mrc145 MAM036
Abstract: transistors BF556A; BF556B; BF556C FEATURES â'¢ Low leakage level (typ. 500 fA) â'¢ High gain â'¢ Low , field-effect transistors in a SOT23 package. PINNING - SOT23 Top view Marking codes: BF556A: M84. BF556B , N-channel silicon junction field-effect transistors BF556A; BF556B; BF556C LIMITING VALUES In accordance , Semiconductors Product specification N-channel silicon junction field-effect transistors DYNAMIC , Semiconductors N-channel silicon junction field-effect transistors Product specification BF556A; BF556B -
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mrc140 MBC846
Abstract: field-effect transistors Product specification Supersedes data of April 1995 File under Discrete , junction field-effect transistors BF556A; BF556B; BF556C FEATURES · Low leakage level (typ. 500 fA , . DESCRIPTION N-channel symmetrical silicon junction field-effect transistors in a SOT23 package. Fig , Semiconductors Product specification N-channel silicon junction field-effect transistors BF556A; BF556B , silicon junction field-effect transistors BF556A; BF556B; BF556C DYNAMIC CHARACTERISTICS Tamb = 25 Philips Semiconductors
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MRC148 mrc151
Abstract: transistors N AUER PHIL IPS /DISCR ETE Preliminary specification J308/309/310 b?E PIN CONFIGURATION , Preliminary specification N-channel silicon field-effect transistors J308/309/310 b?E D , specification N-channel silicon field-effect transistors J 308/309/310 b?E D - , transistors J308/309/310 N ANER PHILIPS/DISCRETE b?E D DYNAMIC CHARACTERISTICS T| = 25 °C. SYM , Semiconductors Preliminary specification N-channel silicon field-effect transistors J308/309/310 b7E -
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DD24013 53S31 MCD217 MCD224 MCD223
Abstract: Philips Semiconductors Product specification N-channel field-effect transistors BFR30; BFR31 , N-channel field-effect transistors BFR30; BFR31 LIMITING VALUES In accordance with the Absolute Maximum , Dec 05 3 Philips Semiconductors Product specification N-channel field-effect transistors BFR30 , transistors 10 iD (mA) 8 max J typy , specification N-channel field-effect transistors MDA661 VGS = 0 V -
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marking M2p 21 sot23 m2p SOT23 MDA660 SNW-EQ-608 SNW-FQ-302A SNW-FQ-302B
Abstract: Philips Semiconductors Product specification N'Channel silicon field-effect transistors , transistors in a plastic TO-92 variant package. CAUTION The device is supplied in an antistatic package. The , N-channef silicon field-effect transistors LIMITING VALUES In accordance with the Absolute Maximum Rating , Semiconductors Product specification N-channel silicon field-effect transistors DYNAMIC CHARACTERISTICS , Semiconductors Product specification N-channel silicon field-effect transistors BF245A; BF245B; BF245C -
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BF245B Philips BH553 MGE776 MQE781 MGE784
Abstract: transistors Product specification Supersedes data of April 1995 File under Discrete Semiconductors, SC07 1996 , transistors FEATURES · Interchangeability of drain and source connections · Frequencies up to 700 MHz , field-effect transistors in a plastic TO-92 variant package. CAUTION The device is supplied in an antistatic , specification N-channel silicon field-effect transistors LIMITING VALUES In accordance with the Absolute , specification N-channel silicon field-effect transistors DYNAMIC CHARACTERISTICS Common source; Tamb = 25 °C Philips Semiconductors
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BF245c spice model bf245b spice model BF245B spice BF245c spice BF245A spice bf245c cross reference MAM257
Abstract: Philips Semiconductors Product specification Small-signal Field-effect Transistors , . Packing (TO-92 leaded types) The transistors are supplied on tape in boxes (ammopack) or on reels. The number per reel and per ammopack is 2000. The ammopack has 80 layers of 25 transistors each. Each layer contains 25 transistors, plus one empty position in order to fold the layer correctly. The ammopack is , Transistors General section Fig.2 TO-92 transistors on tape. 1997 Nov 26 26 Philips -
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Transistors General smd sot343
Abstract: N-channel silicon field-effect transistors , BFU308/309/310 N A FP PHTI TPS/DTSCRETE L71 f1 , transistors N AHER Preliminary specification BFU308/309/310 P H IL IP S /D IS C R E T E b?E , transistors N AflER PH ILI PS/ DI SC RE TE b?E D BFU308/309/310 STATIC CHARACTERISTICS Tj = 25 °C , Semiconductors APX b b S 3 T31 QQ3 3 tifl7 7 Tb N-channel silicon field-effect transistors N AriER p h , field-effect transistors N AUER PH ILI PS/ DI SC RE TE b?E D 0 1 2 3 4 0 BFU308/309/310 -
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MSB032 MBB114 PINNING-TO-18 BFU309 BFU310 BFU308
Abstract: Philips Semiconductors General Small-signal Field-effect Transistors MOUNTING AND SOLDERING , heating. 37 Philips Semiconductors General Small-signal Field-effect Transistors Infrared An , vapour reflow soldering. 38 Philips Semiconductors Small-signal Field-effect Transistors , Field-effect Transistors S o l d e r in g Wave soldering is usually the best method to use when high , Philips Semiconductors Small-signal Field-effect Transistors General Footprint design The -
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Abstract: transistors Prelim inary specification PM B FJ308/309/310 N AMER PHILIPS/DISCRETE (â¡7E I " )- , Philips Semiconductors bbSa^ai DDSMDbO T55 H A P X N-channel silicon field-effect transistors N , oosMQbi *ni * a p x N-channel silicon field-effect transistors - N ANER PHILIPS/DISCRETE ,   bbS3T31 DOEMObE 636 - N AUER PHILIPS/DISCRETE N-channel silicon field-effect transistors , P X Philips Semiconductors N-channel silicon field-effect transistors - N AUER -
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002405T UBB114- PMBFJ308 PMBFJ309 PMBFJ310
Abstract: transistors, which best meet your requirement. It is a comprehensive pocket size reference to your widest choice of field effect transistors. This broad selection is your best assurance of pin-pomting the , choice. This range of field effect transistors is but a portion of the industries' broadest range of silicon and germanium transistors, extending your options even further and allowing Texas Instruments to , Publications 22 T.l. Field Effect Transistors 33 Selection Guide (N Channel) 34 Selection -
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2N4856 2N4861 2N486 2N5045 2N5046 2N5047
Abstract: transistors BF545A'" BF545B: BF545C FEATURES â'¢ Low leakage level (typ. 500 fA) â'¢ High gain â'¢ Low , symmetrical silicon junction field-effect transistors in a SOT23 package. PINNING - SOT23 PIN SYMBOL , Product specification N-chanriel silicon junction field-effect transistors THERMAL CHARACTERISTICS , transistors DYNAMIC CHARACTERISTICS Tamb = 25 °C; unless otherwise specified. BF545A; BF545B; BF545C , Semiconductors N-channel silicon junction field-effect transistors Product specification BF545A; BF545B -
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MBB464 24 SOT23 MBB469
Abstract: Philips Semiconductors Product specification N-channel silicon field-effect transistors J308 , . DESCRIPTION N-channel symmetrical silicon junction field-effect transistors in a TO-92 package. CAUTION The , N-channel silicon field-effect transistors J308; J309; J310 LIMITING VALUES In accordance with the , Manufacturer Philips Semiconductors Product specification N-channel silicon field-effect transistors , field-effect transistors Product specification J308; J309; J310 DYNAMIC CHARACTERISTICS Tj = 25 °C; unless -
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j310 equivalent J310 J310 applications J309 Transistor J310 J308
Abstract: field-effect transistors Product specification Supersedes data of April 1995 File under Discrete , ; PMBFJ310 N-channel silicon field-effect transistors FEATURES PINNING - SOT23 · Low noise PIN , symmetrical silicon junction field-effect transistors in a SOT23 package. s 3 Top view MAM036 , silicon field-effect transistors PMBFJ308; PMBFJ309; PMBFJ310 LIMITING VALUES In accordance with , Product specification PMBFJ308; PMBFJ309; PMBFJ310 N-channel silicon field-effect transistors Philips Semiconductors
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marking code 10 sot23 MCD221
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