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"Field Effect Transistors"

Catalog Datasheet MFG & Type PDF Document Tags
Abstract: DIGITRON SEMICONDUCTORS 3N209-3N210 3N209-3N210 N-CHANNEL DUAL GATE MOS FIELD EFFECT TRANSISTORS MAXIMUM , 3N209-3N210 3N209-3N210 144 Market Street Kenilworth NJ 07033 USA N-CHANNEL DUAL GATE MOS FIELD EFFECT TRANSISTORS , DUAL GATE MOS FIELD EFFECT TRANSISTORS phone +1.908.245-7200 fax +1.908.245-0555 , GATE MOS FIELD EFFECT TRANSISTORS Dim A B C D E F G H J K L M N P TO-72 Inches , . 20120705 mAdc DIGITRON SEMICONDUCTORS 3N209-3N210 3N209-3N210 N-CHANNEL DUAL GATE MOS FIELD EFFECT ... DIGITRON
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datasheet

5 pages,
779 Kb

3N209-3N210 TEXT
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Abstract: FIELD EFFECT TRANSISTORS MAXIMUM RATINGS Rating Symbol Value Unit Drain Source Voltage , DUAL GATE SILICON NITRIDE PASSIVATED MOS FIELD EFFECT TRANSISTORS ELECTRICAL CHARACTERISTICS (TA = , NITRIDE PASSIVATED MOS FIELD EFFECT TRANSISTORS phone +1.908.245-7200 fax +1.908.245-0555 , MOS FIELD EFFECT TRANSISTORS TO-72 Dim A B C D E F G H J K L M N P 144 Market , Street Kenilworth NJ 07033 USA N-CHANNEL DUAL GATE SILICON NITRIDE PASSIVATED MOS FIELD EFFECT ... DIGITRON
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datasheet

5 pages,
1130.7 Kb

MFE211 MFE212 TEXT
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Abstract: Databook.fxp 1/13/99 2:09 PM Page H-2 H-2 01/99 Junction Field Effect Transistors , technology lead to the types in use today. Field effect transistors include the Junction FET (JFET) and the , Insulated Gate FET. All field effect transistors are majority carrier devices. This means that current is , PM Page H-3 H-3 01/99 Junction Field Effect Transistors InterFET Application Notes , Book Company, New York, 1972 2. Sevin, L.J.: Field Effect Transistors, McGraw Hill Book Co., New ... InterFET
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datasheet

11 pages,
282.63 Kb

depletion MOSFET Transistor databook 1967 interfet jfet transistor 741 opamp JFET application note jfet databook FET differential amplifier circuit P-Channel JFET 741 op-amp jfet p channel switch jfet differential transistor JFET APPLICATIONS jfet transistor for VCR "voltage controlled resistor" igfet matched pair JFET TEXT
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Abstract: Junction Field Effect Transistors (JFETs) The Junction Field Effect Transistor (JFET) exhibits , I S I O N I N E L E C T R O N I C S An introduction to Junction Field Effect Transistors , N I C S An introduction to Junction Field Effect Transistors (JFETs) Figure 6 ­ JFET constant , P R E C I S I O N I N E L E C T R O N I C S An introduction to Junction Field Effect , equivalent load impedance R S = the value of the source resistor RD Vo Vi RG The effect of the ... Rhopoint Components
Original
datasheet

4 pages,
207.79 Kb

high transconductance JFET JFET Matched jfet transistor jfets matched jfet transistors jfet rf circuit jfet p channel switch high gain jfet amplifier jfet idss 10 vp -6 field effect transistors opamp 741 transistor jfet 741 opamp 741 op-amp jfet differential transistor jfet having voltage gain matched pair JFET TEXT
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Abstract: chips for MOS and Junction Field Effect Transistors. Working with the most sophisticated equipment , of 10,000, or reverse breakdown voltages of 1,500 volts. B) MOS AND JUNCTION FIELD EFFECT TRANSISTORS (See Section E) Solitron's manufacturing processes for MOS and Junction Field Effect Transistor chips , FIELD EFFECT TRANSISTORS 1. CHIP MOUNTING RECOMMENDATIONS (See Section E) Eutectic alloy chip mounting , field. BASIC CHARACTERISTICS A) POWER TRANSISTORS AND PLANAR DIODES Solitron's manufacturing processes ... OCR Scan
datasheet

3 pages,
198.63 Kb

TEXT
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Abstract: MOS FIELD EFFECT TRANSISTORS MOS-F E L DE F F ECT-TR AN SISTOR E N Type Channel Maximum ratings • Grenzdaten Rj y 21 at UCB le Ugb Cr Case Gehäuse Typ Kanal UCE Uc£M* V UGE Ugem* V Ucc V lc mA Piol mW h °C Rce(on) * Rce(off) * Q bei mS V mA V pF KF520 KF520 N 30 ±70 9 — 30 300 175 & 10 , Polarität, t,p s 10 ms, mit Strombegrenzung auf 10 ¡«A. DUAL MOS FIELD EFFECT TRANSISTORS WITH CHANNEL P , €” 2 100 1) ') f = 10 kHz JUNCTION FIELD EFFECT TRANSISTORS WITCH CHANNEL N FOR VERY HIGH SPEED ... OCR Scan
datasheet

1 pages,
107.79 Kb

TRANSISTORE KF523 "Field Effect Transistors" transistor 4393 KS4393 KS4392 KF522 field effect transistors KS4391 KF552 KF521 KF520 TEXT
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Abstract: ON Semiconductor Field Effect Transistors and Power TMOS ® MOSFETs Field Effect Transistors Field Effect Transistors JFETs TMOS MOSFETs JFETs operate in the depletion mode. They are available in both P- and N-channel and are offered in both Through-hole and Surface Mount Packages. Applications include generalpurpose amplified, switches and choppers, and RF amplifiers and mixers. These , ® Typical. Power TMOS MOSFETs Field Effect Transistors Surface Mount FETs This section contains the FET ... Allied Electronics Catalog
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datasheet

1 pages,
80.91 Kb

RF power transistors 3000 BS17 JFET with Yos MTP75N06HD P-Channel Depletion Mode FET P-Channel Depletion Mosfets p-channel jfet rf 20 watt audio amplifier C847 ft960 Field Effect Transistors N-Channel JFET FETs TEXT
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Abstract: the applied magnetic field. By this property, the Hall effect is employed as a magnetic sensor. VH = , Figure 1. The Hall effect and the Lorentz force. The blue arrows, B, represent a magnetic field passing , Halleffect sensor integrated circuits. This note provides a basic understanding of the Hall effect and how , . Hall Effect Principles B The Hall effect is named after Edwin Hall, who in 1879 discovered that a voltage potential develops across a currentcarrying conductive plate when a magnetic field passes through ... Allegro MicroSystems
Original
datasheet

5 pages,
209.6 Kb

4 pin linear hall sensor 4pin hall sensor allegro hall ic ALLEGRO TRANSISTOR d 1879 TRANSISTOR hall hall digital switch hall sensor 4pin transistor LINEAR OUTPUT HALL EFFECT SENSORS Hall IC Switch 4 pin hall throttle sensor hall sensor 4pin allegro hall circuit diagram of hall effect hall effect sensor 3pin hall effect sensor 4 pin ic allegro HALL EFFECT SENSOR allegro 3 PIN hall effect sensor TEXT
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Abstract: choice of field effect transistors. This broad selection is your best assurance of pin-pomting the , choice. This range of field effect transistors is but a portion of the industries' broadest range of , Publications 22 T.l. Field Effect Transistors 33 Selection Guide (N Channel) 34 Selection , . F.E.T. RATINGS 9 Fig. 2 F.E.T. LEAKAGE CURRENTS The classification of field effect transistors , (1) Field Effect Transistors Author Leonce J. Sevin Pub.: McGraw-Hill (2) Field Effect ... OCR Scan
datasheet

pages,
0 Kb

TEXT
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Abstract: MMCF4223 MMCF4223 (silicon) MMCF4224 MMCF4224 Flip-Chip — N-channel junction field effect transistors designed for VHF amplifier and mixer applications. • Drain and Source Interchangeable FLIP-CHIP N-CHANNEL JUNCTION FIELD EFFECT TRANSISTORS MAXIMUM RATINGS Rating Symbol Value Unit Drain-Source Voltage Vds 30 Vdc Drain-Gate Voltage VDG 30 Vdc Gate-Source Voltage VGS 30 Vdc Drain Current Id 20 m Ade Operating Junction Temperature Tj +175 °C 4-23 MMCF4223 MMCF4223, MMCF4224 MMCF4224 (continued) ELECTRICAL CHARACTERISTICS ... OCR Scan
datasheet

2 pages,
76.61 Kb

MMCF4224 MMCF4223 Field Effect Transistors TEXT
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Archived Files

Abstract Saved from Date Saved File Size Type Download
Models Spice and S-parameter Device models and parameters Field Effect Transistors models PowerMOS Transistors models RF Wideband Transistors models Schottky Barrier Diodes models Small Signal Transistor models Diodes models MMICs models Varicap models
/datasheets/files/philips/models/index-v2.html
Philips 14/06/2005 1.14 Kb HTML index-v2.html
2SK2479-ZJ-E1/E2 2SK2479-ZJ-E1/E2   2SK2479-ZJ-E1/E2 2SK2479-ZJ-E1/E2 single more.  DESCRIPTION The 2SK2479 2SK2479 is N-Channel MOS Field Effect Transistors designed for high voltage switching applications.  FEATURES Low On-Resistance R DS(on) = 7.5 Ohm MAX. {V GS = 10 V, I D = 2.0 A) Low C iss C iss = 485 pF TYP.
/datasheets/files/nec/mosfet/product/2sk2479-.htm
NEC 02/02/2000 5.97 Kb HTM 2sk2479-.htm
2SK2484 2SK2484   2SK2484 2SK2484 single more.  DESCRIPTION The 2SK2484 2SK2484 is N-Channel MOS Field Effect Transistors designed for high voltage switching applications.  FEATURES Low On-Resistance R DS(on) = 2.8 Ohm MAX. {V GS = 10 V, I D = 3.0 A) Low C iss C iss = 1200 pF TYP. High Avalanche Capability Ratings
/datasheets/files/nec/mosfet/product/2sk2484.htm
NEC 02/02/2000 5.96 Kb HTM 2sk2484.htm
2SK2136-ZJ-E1/E2 2SK2136-ZJ-E1/E2   2SK2136-ZJ-E1/E2 2SK2136-ZJ-E1/E2 single more.  DESCRIPTION The 2SK2136 2SK2136, 2SK2136-Z 2SK2136-Z are N-Channel Power MOS Field Effect Transistors designed for high voltage switching applications.  FEATURES Low On-state Resistance R DS(on) = 0.18 Ohm MAX. {V GS = 10 V, I D = 10 A) Low C iss C iss = 1100 pF
/datasheets/files/nec/mosfet/product/2sk2136-.htm
NEC 02/02/2000 5.99 Kb HTM 2sk2136-.htm
2SK2133-ZJ-E1/E2 2SK2133-ZJ-E1/E2   2SK2133-ZJ-E1/E2 2SK2133-ZJ-E1/E2 single more.  DESCRIPTION The 2SK2133 2SK2133, 2SK2133-Z 2SK2133-Z are N-Channel Power MOS Field Effect Transistors designed for high voltage switching applications.  FEATURES Low On-state Resistance R DS(on) = 0.21 Ohm MAX. {V GS = 10 V, I D = 8.0 A) Low C iss C iss = 1090 pF
/datasheets/files/nec/mosfet/product/2sk2133-.htm
NEC 02/02/2000 5.99 Kb HTM 2sk2133-.htm
2SK2133-S 2SK2133-S   2SK2133-S 2SK2133-S single more.  DESCRIPTION The 2SK2133 2SK2133, 2SK2133-Z 2SK2133-Z are N-Channel Power MOS Field Effect Transistors designed for high voltage switching applications.  FEATURES Low On-state Resistance R DS(on) = 0.21 Ohm MAX. {V GS = 10 V, I D = 8.0 A) Low C iss C iss = 1090 pF
/datasheets/files/nec/mosfet/product/2sk21330.htm
NEC 02/02/2000 5.97 Kb HTM 2sk21330.htm
2SK2136-S 2SK2136-S   2SK2136-S 2SK2136-S single more.  DESCRIPTION The 2SK2136 2SK2136, 2SK2136-Z 2SK2136-Z are N-Channel Power MOS Field Effect Transistors designed for high voltage switching applications.  FEATURES Low On-state Resistance R DS(on) = 0.18 Ohm MAX. {V GS = 10 V, I D = 10 A) Low C iss C iss = 1100 pF
/datasheets/files/nec/mosfet/product/2sk21360.htm
NEC 02/02/2000 5.98 Kb HTM 2sk21360.htm
2SK2484-ZJ-E1/E2 2SK2484-ZJ-E1/E2   2SK2484-ZJ-E1/E2 2SK2484-ZJ-E1/E2 single more.  DESCRIPTION The 2SK2484 2SK2484 is N-Channel MOS Field Effect Transistors designed for high voltage switching applications.  FEATURES Low On-Resistance R DS(on) = 2.8 Ohm MAX. {V GS = 10 V, I D = 3.0 A) Low C iss C iss = 1200 pF TYP.
/datasheets/files/nec/mosfet/product/2sk2484-.htm
NEC 02/02/2000 5.97 Kb HTM 2sk2484-.htm
2SK2481 2SK2481   2SK2481 2SK2481 single more.  DESCRIPTION The 2SK2481 2SK2481 is N-Channel MOS Field Effect Transistors designed for high voltage switching applications.  FEATURES Low On-Resistance R DS(on) = 4.0 Ohm MAX. {V GS = 10 V, I D = 2.0 A) Low C iss C iss = 900 pF TYP. High Avalanche Capability Ratings
/datasheets/files/nec/mosfet/product/2sk2481.htm
NEC 02/02/2000 5.96 Kb HTM 2sk2481.htm
2SK1491 2SK1491   2SK1491 2SK1491 single more.  DESCRIPTION The 2SK1491 2SK1491 is N-Channel MOS Field Effect Transistors designed for high voltage switching applications.  FEATURES Low On-state Resistance R DS(on)
/datasheets/files/nec/mosfet/product/2sk1491.htm
NEC 02/02/2000 6.25 Kb HTM 2sk1491.htm