500 MILLION PARTS FROM 12000 MANUFACTURERS

DATASHEET SEARCH ENGINE

Direct from the Manufacturer

Part Manufacturer Description PDF & SAMPLES
V62/11601-01YE-T Texas Instruments HALF BRDG BASED MOSFET DRIVER
ISL6625ACRZ-T Intersil Corporation Synchronous Rectified Buck MOSFET Drivers; DFN8; Temp Range: See Datasheet
HIP6601BCBZ Intersil Corporation Synchronous Rectified Buck MOSFET Drivers; SOIC8; Temp Range: 0° to 70°
HS0-4424RH-Q Intersil Corporation BUF OR INV BASED MOSFET DRIVER
ISL6596CBZ-T Intersil Corporation Synchronous Rectified MOSFET Driver; DFN10, SOIC8; Temp Range: See Datasheet
ISL6605IRZ-T Intersil Corporation Synchronous Rectified MOSFET Driver; QFN8, SOIC8; Temp Range: See Datasheet

"Field Effect Transistors"

Catalog Datasheet MFG & Type PDF Document Tags
Abstract: DIGITRON SEMICONDUCTORS 3N209-3N210 N-CHANNEL DUAL GATE MOS FIELD EFFECT TRANSISTORS MAXIMUM , 3N209-3N210 144 Market Street Kenilworth NJ 07033 USA N-CHANNEL DUAL GATE MOS FIELD EFFECT TRANSISTORS , DUAL GATE MOS FIELD EFFECT TRANSISTORS phone +1.908.245-7200 fax +1.908.245-0555 , GATE MOS FIELD EFFECT TRANSISTORS Dim A B C D E F G H J K L M N P TO-72 Inches , . 20120705 mAdc DIGITRON SEMICONDUCTORS 3N209-3N210 N-CHANNEL DUAL GATE MOS FIELD EFFECT DIGITRON
Original
3N209 3N210 MIL-PRF-19500
Abstract: FIELD EFFECT TRANSISTORS MAXIMUM RATINGS Rating Symbol Value Unit Drain Source Voltage , DUAL GATE SILICON NITRIDE PASSIVATED MOS FIELD EFFECT TRANSISTORS ELECTRICAL CHARACTERISTICS (TA = , NITRIDE PASSIVATED MOS FIELD EFFECT TRANSISTORS phone +1.908.245-7200 fax +1.908.245-0555 , MOS FIELD EFFECT TRANSISTORS TO-72 Dim A B C D E F G H J K L M N P 144 Market , Street Kenilworth NJ 07033 USA N-CHANNEL DUAL GATE SILICON NITRIDE PASSIVATED MOS FIELD EFFECT DIGITRON
Original
MFE211 MFE212
Abstract: Databook.fxp 1/13/99 2:09 PM Page H-2 H-2 01/99 Junction Field Effect Transistors , technology lead to the types in use today. Field effect transistors include the Junction FET (JFET) and the , Insulated Gate FET. All field effect transistors are majority carrier devices. This means that current is , PM Page H-3 H-3 01/99 Junction Field Effect Transistors InterFET Application Notes , Book Company, New York, 1972 2. Sevin, L.J.: Field Effect Transistors, McGraw Hill Book Co., New InterFET
Original
matched pair JFET igfet jfet transistor for VCR JFET APPLICATIONS jfet differential transistor
Abstract: Junction Field Effect Transistors (JFETs) The Junction Field Effect Transistor (JFET) exhibits , I S I O N I N E L E C T R O N I C S An introduction to Junction Field Effect Transistors , N I C S An introduction to Junction Field Effect Transistors (JFETs) Figure 6 ­ JFET constant , P R E C I S I O N I N E L E C T R O N I C S An introduction to Junction Field Effect , equivalent load impedance R S = the value of the source resistor RD Vo Vi RG The effect of the Rhopoint Components
Original
jfet having voltage gain 741 op-amp 741 opamp transistor jfet opamp 741 field effect transistors
Abstract: chips for MOS and Junction Field Effect Transistors. Working with the most sophisticated equipment , of 10,000, or reverse breakdown voltages of 1,500 volts. B) MOS AND JUNCTION FIELD EFFECT TRANSISTORS (See Section E) Solitron's manufacturing processes for MOS and Junction Field Effect Transistor chips , FIELD EFFECT TRANSISTORS 1. CHIP MOUNTING RECOMMENDATIONS (See Section E) Eutectic alloy chip mounting , field. BASIC CHARACTERISTICS A) POWER TRANSISTORS AND PLANAR DIODES Solitron's manufacturing processes -
OCR Scan
Abstract: MOS FIELD EFFECT TRANSISTORS MOS-F E L DE F F ECT-TR AN SISTOR E N Type Channel Maximum ratings â'¢ Grenzdaten Rj y 21 at UCB le Ugb Cr Case Gehäuse Typ Kanal UCE Uc£M* V UGE Ugem* V Ucc V lc mA Piol mW h °C Rce(on) * Rce(off) * Q bei mS V mA V pF KF520 N 30 ±70 9 â'" 30 300 175 & 10 , Polarität, t,p s 10 ms, mit Strombegrenzung auf 10 ¡«A. DUAL MOS FIELD EFFECT TRANSISTORS WITH CHANNEL P , '" 2 100 1) ') f = 10 kHz JUNCTION FIELD EFFECT TRANSISTORS WITCH CHANNEL N FOR VERY HIGH SPEED -
OCR Scan
KF521 KF522 KF523 KF552 KS4391 KS4392 KS4393 T11/1
Abstract: ON Semiconductor Field Effect Transistors and Power TMOS ® MOSFETs Field Effect Transistors Field Effect Transistors JFETs TMOS MOSFETs JFETs operate in the depletion mode. They are available in both P- and N-channel and are offered in both Through-hole and Surface Mount Packages. Applications include generalpurpose amplified, switches and choppers, and RF amplifiers and mixers. These , ® Typical. Power TMOS MOSFETs Field Effect Transistors Surface Mount FETs This section contains the FET Allied Electronics Catalog
Original
MTP75N06HD N-Channel JFET FETs ft960 C847 20 watt audio amplifier p-channel jfet rf P-Channel Depletion Mosfets 2N5458 2N5457 2N5460 MTP20N20E MTP10N10E MTP12N10E
Abstract: the applied magnetic field. By this property, the Hall effect is employed as a magnetic sensor. VH = , Figure 1. The Hall effect and the Lorentz force. The blue arrows, B, represent a magnetic field passing , Halleffect sensor integrated circuits. This note provides a basic understanding of the Hall effect and how , . Hall Effect Principles B The Hall effect is named after Edwin Hall, who in 1879 discovered that a voltage potential develops across a currentcarrying conductive plate when a magnetic field passes through Allegro MicroSystems
Original
allegro 3 PIN hall effect sensor allegro HALL EFFECT SENSOR hall effect sensor 4 pin ic hall effect sensor 3pin circuit diagram of hall effect allegro hall 296065-AN
Abstract: choice of field effect transistors. This broad selection is your best assurance of pin-pomting the , choice. This range of field effect transistors is but a portion of the industries' broadest range of , Publications 22 T.l. Field Effect Transistors 33 Selection Guide (N Channel) 34 Selection , . F.E.T. RATINGS 9 Fig. 2 F.E.T. LEAKAGE CURRENTS The classification of field effect transistors , (1) Field Effect Transistors Author Leonce J. Sevin Pub.: McGraw-Hill (2) Field Effect -
OCR Scan
2N4856 2N4861 2N486 2N5045 2N5046 2N5047
Abstract: MMCF4223 (silicon) MMCF4224 Flip-Chip â'" N-channel junction field effect transistors designed for VHF amplifier and mixer applications. â'¢ Drain and Source Interchangeable FLIP-CHIP N-CHANNEL JUNCTION FIELD EFFECT TRANSISTORS MAXIMUM RATINGS Rating Symbol Value Unit Drain-Source Voltage Vds 30 Vdc Drain-Gate Voltage VDG 30 Vdc Gate-Source Voltage VGS 30 Vdc Drain Current Id 20 m Ade Operating Junction Temperature Tj +175 °C 4-23 MMCF4223, MMCF4224 (continued) ELECTRICAL CHARACTERISTICS -
OCR Scan
Abstract: ODOS^ab 0 LOW POWER FIELD EFFECT TRANSISTORS Devices, Inc Type Number Case Style (TO-) Avol Min V/mV , FIELD EFFECT TRANSISTORS Type Number Case Style (TO-) Geometry â'¢BVDgo or BVgss Min (V) Ciss Max (pF , ¿1-ZS TS l)E|fl3böhDE OODa^Sà 4 I ."ifSw?,â"¢., ^sàêiitram LOW POWER FIELD EFFECT TRANSISTORS , â¡â¡â¡aT2ci b J" LOW POWER FIELD EFFECT TRANSISTORS NIHIL Type Number Case Style (TO-) Geometry , 0 29 30 D T- DE I 03hflbD2 OOGETBQ E â =35 LOW POWER FIELD EFFECT TRANSISTORS Devices, Inc -
OCR Scan
UC4250 IN5314 IN5309 IN5286 2NB906 2N5163 IN5313 UC42500 MIL-STD-883C 19S00/ 2N2609 2N3821
Abstract: Field NA s dEx q dx (25), (26). The above equations define the field-modulation effect in , because of the lateral field set up by the presence of the trench capacitor. The field-modulation effect , Drain Figure 16 - Lateral Electric Field Component of DTSFET Figure 17 ­ Field-Modulation Effect in , and field distributions inside these devices are described. Using Gauss's law, the field-induced , super-field MOSFETs is calculated from the knowledge of the lateral field distributions. It is shown that the -
Original
Trench MOSFET Termination Structure Diodes ed26 PN channel MOSFET 10A Design Seminar International Power Sources etal p407
Abstract: 0 2 4 6 -VDS 8 (V) 10 12 Silicon Field Effect Transistors MTM23123 , ) 100 Silicon Field Effect Transistors MTM23223 N-Channel MOS Type Absolute Maximum Ratings , 10 VDS 12 (V) 14 16 18 20 Silicon Field Effect Transistors MTM23224 , , Nagaokakyo, Kyoto 617-8520, Japan Tel. +81-75-951-8151 http://panasonic.co.jp/semicon Silicon Field Effect Transistors MTM23110 P-Channel MOS Type Absolute Maximum Ratings Parameter Symbol Panasonic
Original
MTM231230L mtm231230 MTM23123/MTM23110/MTM23223/MTM23224 M00695BE
Abstract: J111 J112 J113 N-CHANNEL SILICON JUNCTION FIELD EFFECT TRANSISTORS MICRO EL.ECTRDN Jill, J112, J113 are N-channel silicon junction field effect transistors designed for analog switching, choppers and commutators applications. T0-92 ABSOLUTE MAXIMUM RATINGS Gate-Source Voltage Gate Current Total Power Dissipation ('A=25 C) Power Derating (to 125°C) Operating Junction & Storage Temperature VGS IG Ptot Tj, Tstg -35 V 50mA 350mW 3.5mW/°C -55 to +125°C ELECTRICAL CHARACTERISTICS (TA=25°C) PARAMETER SYMBOL MIN -
OCR Scan
J112 jill j112 ltd J113 J111 VDS40 3-/T103 3-/T10371
Abstract: J111 J112 J113 N-CHANNEL SILICON JUNCTION FIELD EFFECT TRANSISTORS Irrl»! JI MICRO E Jill, J112, J113 are N-channel silicon . junction field effect transistors designed for analog switching, choppers and commutators applications. TO-92 ABSOLUTE MAXIMUM RATINGS Gate-Source Voltage VGS Gate Current IG Total Power Dissipation ('A=25 C) Ptot Power Derating (to 125°C) Operating Junction & Storage Temperature Tj, Tstg -35 V 50mA 350mW 3.5mW/°C -55 to +125°C ELECTRICAL CHARACTERISTICS (TA -
OCR Scan
Abstract: . +81-75-951-8151 http://panasonic.co.jp/semicon 0.2±0.1 Silicon Field Effect Transistors MTM23110 , Cx ( pF ) 0 0 2 4 6 -VDS (V) 8 10 12 Silicon Field Effect Transistors MTM23123 P-Channel , ) Coss Silicon Field Effect Transistors MTM23223 N-Channel MOS Type Absolute Maximum Ratings , 12 (V) 14 16 18 20 Silicon Field Effect Transistors MTM23224 (Tentative , STANDARD JIS C 7030 Measuring methods for transistors. 1) Measuring on Ceramic substrate at 40×38×0.1 mm Panasonic
Original
M00695AE
Abstract: AN1628/D Understanding Power Transistors Breakdown Parameters Prepared by: Michaël Bairanzade http://onsemi.com APPLICATION NOTE TUNNELING EFFECT When the electrical field approaches 106 V/cm , get such a high field, the junction must have relatively high doping concentration on both side of the p-n junction. As a matter of fact, the field may be so high that it creates enough force on a , effect. For junctions having breakdown voltage in excess of 6Eg/q, the mechanism is generated by ON Semiconductor
Original
ferrite n27 bipolar transistor tester germanium transistors NPN AN-1628 POWER TRANSISTOR Cross pnp germanium low power transistor
Abstract: transistors is described in Figure 6. THICK FIELD TRANSISTOR THRESHOLD VOLTAGE OF > 5 V NORMAL , the high electric field at the drain side of the channel which results in their energy being shifted , this mechanism is field assisted electron tunneling. This is different from CHE in that the mechanism is created as a result of a high electric field between the gate of the device and the source or drain. If the field is large enough, it lowers the height of the energy barrier, the silicon dioxide Freescale Semiconductor
Original
AN1837 68HC12 68HC16 FLASH CROSS M68HC08 M68HC12 AN1837/D
Abstract: between transistors and any signal layers running across the die. POLY-SI POLY-SI FIELD OXIDE SILICON , steps for these two transistors is described in Figure 6. THICK FIELD TRANSISTOR THRESHOLD VOLTAGE , become heated as a result of the high electric field at the drain side of the channel which results in , description of this mechanism is field assisted electron tunneling. This is different from CHE in that the mechanism is created as a result of a high electric field between the gate of the device and the source or Digital DNA
Original
motorola embedded flash 1990
Abstract: Cx ( pF ) 0 0 2 4 6 -VDS (V) 8 10 12 Silicon Field Effect Transistors MTM23123 P-Channel , ) Coss Silicon Field Effect Transistors MTM23223 N-Channel MOS Type Absolute Maximum Ratings , 617-8520, Japan Tel. +81-75-951-8151 http://panasonic.co.jp/semicon 0.2±0.1 Silicon Field Effect Transistors MTM23110 P-Channel MOS Type Absolute Maximum Ratings Parameter Drain-Source voltage , STANDARD JIS C 7030 Measuring methods for transistors. 1) Measuring on Ceramic substrate at 40×38×0.1 mm Panasonic
Original
MTM23123/MTM23110/MTM23223MOSFET M00695CE
Showing first 20 results.