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Part Manufacturer Description PDF & SAMPLES
M430FR5739SRHATEP Texas Instruments MSP430FR5739 24 MHz ULP microcontroller with 16 KB FRAM, 1 KB SRAM, 32 IO, 10-bit ADC & comparator 40-VQFN -55 to 85
M430FR5989SRGCREP Texas Instruments 16 MHz ULP Microcontroller Featuring 128 KB FRAM, 2 KB SRAM, 48 IO, ADC12, Scan IF, AES 64-VQFN -55 to 95
V62/14644-01XE Texas Instruments MSP430FR5739 24 MHz ULP microcontroller with 16 KB FRAM, 1 KB SRAM, 32 IO, 10-bit ADC & comparator 40-VQFN -55 to 85

"Ferroelectric RAM"

Catalog Datasheet MFG & Type PDF Document Tags
Abstract: nonvolatile static RAM designed to demonstrate the capability of ferroelectric technology when integrated with , much flexibility as possible in understanding the capabilities of ferroelectric devices. The static RAM , a conventional static RAM. Three of the remaining 10 pins are connected to separate ferroelectric , ferroelectric devices, (shadow portion of RAM) to the static RAM cell. Any violation of the timing parameters , static RAM read/write operation the 7 ferroelectric control pins are held at DC levels as follows: CRA = -
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SCT T 75SSG15 7S55015 T-46-23-37
Abstract: Overview Figure 1. Perovskite Ferroelectric Crystal Established memory technologies are divided into , power continues to be an engineering challenge. Ferroelectric Random Access Memory or FRAM has attributes that make it the ideal nonvolatile memory. It is a true nonvolatile RAM. FRAM memory , Memory? FRAM is a RAM-based device that uses the ferroelectric effect for a storage mechanism. This is , floating gate technology. The ferroelectric effect is the ability of a material to store an electric Ramtron International
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ferroelectric
Abstract: 's Ferroelectric Random Access Memory (FRAM) microcontroller (MCU), which features embedded, non-volatile FRAM , can be configured either as Read-Only Memory (ROM) or RandomAccess Memory (RAM). The FRAM , Memory Technology0 Introduction to FRAM FRAM is a non-volatile memory that uses a ferroelectric thin , ) shown in Figure 1. When ferroelectric characteristics exhibit a hysteresis loop, FRAM can achieve a , C-V characteristics. However, because the ferroelectric capacitor shifts the positions of atoms, it Fujitsu
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fram MB95R203 fram rfid 0x61 FRAM Memory FUJITSU FRAM FRAM-AN-21377-09/2010
Abstract: Preliminary FM1808 256Kb Bytewide FRAM Memory Features 256K bit Ferroelectric Nonvolatile RAM , retention at 85° C · NoDelayTM write · Advanced high-reliability ferroelectric process Superior to BBSRAM , FM1808 is a 256-kilobit nonvolatile memory employing an advanced ferroelectric process. A ferroelectric random access memory or FRAM is nonvolatile but operates in other respects as a RAM. It provides data , other types of nonvolatile memory. In-system operation of the FM1808 is very similar to other RAM based Ramtron International
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FM1808-70-P FM1808-70-S FM1808-120-P FM1808-120-S 545-FRAM
Abstract: w w .ram ton.com Features Nonvolatile B I O 10 Endurance No Write delay Low Power Industrial Temp Range Description Ramtron's parallel ferroelectric random access memories, or FRAM® memories , , user programmable data/features, and slate upon power loss. With Ramtron's ferroelectric technology , materials, processing, and design to manufacture solid state ferroelectric memories. The result of these , benefits compared to existing products. RAMTS00001 The ferroelectric effect is the ability of a material to -
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CHIP 8-PIN 24c16 24c16 5 pin pinout 24c16 wp eeprom 24C16 5 pin SCK SDA WP FM1608 FM24C16 FM25040 400KHZ 24C04 24C16
Abstract:  Preliminary FM25640 64Kb F RAM Serial Memory RaMTRON Features 64K bit Ferroelectric Nonvolatile RAM â'¢ Organized as 8,192 x 8 bits â'¢ High endurance 10 Billion (IO10) read/writes â'¢ 10 year data retention at 85° C â'¢ NoDelayâ"¢ write â'¢ Advanced high-reliability ferroelectric , DIP Description The FM25640 is a 64-kilobit nonvolatile memory employing an advanced ferroelectric process. A ferroelectric random access memory or FRAM is nonvolatile but operates in other respects as a -
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FM25640-P FM25640-S
Abstract: RAMTRON CORP ^SE D 7S5SG15 PDÃÃO^b 12D I RAM r^lMTRON FM 1208FRAM® Memory 4,096-Bit Nonvolatile Ferroelectric RAM Product Preview Features â  4,096-Bit Nonvolatile Ferroelectric RAM Organized as 512wx8b â  CMOS Technology with Integrated Ferroelectric Storage Cells â  Fully Synchronous , °C Ambient Operating Temperature Range Description The FM 1208 is a bytewide ferroelectric RAM, or FRAM , semiconductor RAM with the nonvolatile retention of magnetic storage. The FM 1208 is manufactured in a 1.8 -
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PJ 0416 1v til 3010 096-B FM120824-P
Abstract: 1208SFRAM® Memory 4,096-Bit Nonvolatile Ferroelectric RAM Product Specification Features â  4,096 Bit Bytewide Nonvolatile Ferroelectric RAM Organized as 512 x 8 â  CMOS Technology with Integrated Ferroelectric Storage Cells â  Fully Synchronous Operation - 250ns Read Access - 500ns Read/Write Cycle Time , ferroelectric RAM, or FRAM® product organized as 512 x 8. FRAM memory products from Ramtron combine the read/write characteristics of semiconductor RAM with the nonvolatile retention of magnetic storage. This -
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1208S FM1208S
Abstract: MAR ü r^MTRON FM 1408S FRAM® Memory 16,384-Bit Nonvolatile Ferroelectric RAM Product Preview Features m 16,384-Bit Nonvolatile Ferroelectric RAM Organized as 2Kw x 8b â  CMOS Technology with Integrated Nonvolatile Ferroelectric Storage Cells â  Fully Synchronous Symmetrical Operation - , FM 1408 dual-mode ferroelectric RAM, or FRAM® product. This memory is the plug replacement for , CMOS process and utilizes the bistable property of Ramtron's ferroelectric memory cells to store data -
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Ferroelectric RAM mtron til 081 384-B
Abstract: FM1208S FRAM® Memory r ^ M T R O N 4,096-Bit Nonvolatile Ferroelectric RAM Product Specification Features 4,096 Bit Bytewide Nonvolatile Ferroelectric RAM Organized as 512 x 8 CMOS Technology with Integrated Ferroelectric Storage Cells Fully Synchronous Operation - 200ns Read Access - 400ns Read/Write , Operating Temperature Range The FM1208S is a bytewide ferroelectric RAM, or FRAM® product, organized as 512 x 8. FRAM memory products from Ramtron combine the read/write characteristics of semiconductor RAM -
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DDD03D7
Abstract: FM1608 64Kb By te wide F RAM Memory RaMTRON Features 64K bit Ferroelectric Nonvolatile RAM , NoDelayâ"¢ write Advanced high-reliability ferroelectric process Superior to BBSRAM Modules No battery , a 64-kilobit nonvolatile memory employing an advanced ferroelectric process. A ferroelectric random access memory or FRAM is nonvolatile but operates in other respects as a RAM. It provides data retention , nonvolatile memory. In-system operation of the FM1608 is very similar to other RAM based devices. Memory read -
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FM1608-120-P FM1608-120-S
Abstract: FM1208SFRAM® Memory Î^ IM IR O N Features 4,096 Bit Bytewide Nonvolatile Ferroelectric RAM Organized as 512 x 8 CMOS Technology with Integrated Ferroelectric Storage Cells Fully Synchronous , Endurance On Chip Data Protection Circuit 4,096-Bit Nonvolatile Ferroelectric RAM Product Specification , °C Ambient Operating Temperature Range Description The FM1208S is a bytewide ferroelectric RAM, or FRAM , semiconductor RAM with the nonvolatile retention of magnetic storage. This product is manufactured in a CMOS -
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Abstract: -Bit Nonvolatile Ferroelectric RAM Engineering Evaluation Unit* v Features 4,096-Bit Nonvolatile Ferroelectric RAM Organized as 512w x 8b CMOS Technology with Integrated Ferroelectric Storage Cells Dual , -bit nonvolatile ferroelectric RAM, or FRAM®, memoiy product intended for use as an engineering evaluation vehicle , which combine the read/write characteris tics of semiconductor RAM with the nonvolatile retention of , ferroelectric storage cells developed and patented by Ramtron. The FMx 1208 supports two operating modes -
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transistor A4t transistor A4t 45 transistor A4t 16 transistor A4t 35 755SD15 GOQG71 124-P 7S5S015
Abstract: , Toshiba Corp., Yokohama, Japan This 8Mb chain ferroelectric RAM (chain FeRAMâ"¢) uses 0.25¡im 2 , low-voltage operation down to 2.5V is realized by 4) a ferroelectric capacitor overdrive scheme. Random access time is 40ns, and read/write cycle time is 70ns at 3.0V. Ferroelectric RAM (FeRAM) has potential as , 2.7 A 76mm2 8Mb Chain Ferroelectric Memory Daisaburo Takashima, Yoshiaki Takeuchi, Tadashi , that, a plateline (/PL) is pulled up to apply bias only to the selected ferroelectric capacitor (CI -
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toshiba FeRAM FeRAM CHIP capacitor cross reference 272C CEA-40
Abstract: FM25160 16Kb FRAM Serial Memory Features 16K bit Ferroelectric Nonvolatile RAM â'¢ Organized as 2,048 x 8 bits â'¢ High endurance 10 Billion (1010) read/writes â'¢ 10 year data retention at 85° C â'¢ NoDelayâ"¢ write â'¢ Advanced high-reliability ferroelectric process Fast Serial Peripheral , -kilobit nonvolatile memory employing an advanced ferroelectric process. A ferroelectric random access memory or FRAM is nonvolatile but operates in other respects as a RAM. It provides reliable data retention for 10 Ramtron International
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FM25160-P FM25160-S
Abstract: r^MTRON FM1208S FRAM® Memory 4,096-Bit Nonvolatile Ferroelectric RAM Product Specification Features â  4,096 Bit Bytewide Nonvolatile Ferroelectric RAM Organized as 512 x 8 â  CMOS Technology with Integrated Ferroelectric Storage Cells â  Fully Synchronous Operation - 200ns Read Access - , ferroelectric RAM, or FRAM® product, organized as 512 x 8. FRAM memory products from Ramtron combine the read/write characteristics of semiconductor RAM with the nonvolatile retention of magnetic storage. This -
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7SSS01S
Abstract: I FM1208SFRAM® Memory r^ p M T R O N Features 4,096 Bit Bytewide Nonvolatile Ferroelectric RAM Organized as 512 x 8 CMOS Technology with Integrated Ferroelectric Storage Cells Fully Synchronous , ,096-Bit Nonvolatile Ferroelectric RAM Product Specification Description The FM 1208S is a bytewide ferroelectric RAM, or FRAM® product organized as 512 x 8. FRAM memory products from Ramtron combine the read/write characteristics of semiconductor RAM with the nonvolatile retention of magnetic storage. This -
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Abstract: data in RAM and writing to a floating gate non-volatile memory on power down introduces the speed , integrates ferroelectric materials with standard semiconductor chip design and fabrication technology to , / write performance, nearly unlimited write endurance and low power consumption of static RAM (SRAM) with the secure storage of data in the event of power loss that is unavailable with standard RAM , ) process, with a ferroelectric crystal between two electrode plates 32 AUTO ELECTRONICS | JANUARY/FEBRUARY -
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airbag control unit airbag
Abstract: FeRAM Memory What are ferro-electric RAMs ? are non-volatile memories (like Flash) are , size comparable cell size ·· ·· have a capacitor made of a ferro-electric have a capacitor made of a ferro-electric material, e.g. SBT (SrBi22Ta22O99) or PZT (PbZrTiO33) material, e.g. SBT , , Flash, EEPROM and è can replace slow SRAM, Flash, EEPROM and DRAM on one memory chip: Universal RAM DRAM on one memory chip: Universal RAM MP SM PM September 00 Page 1 è are capable of use in Infineon Technologies
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interfacing sram and dram PZT material universal eeprom Wordwise 22O99
Abstract: Preliminary FM25C160 16Kb FRAM ® Serial Memory Features 16K bit Ferroelectric Nonvolatile RAM · Organized as 2,048 x 8 bits · High endurance 10 Billion (1010) read/writes · 10 year data retention at 55° C · NoDelayTM Writes · Advanced high-reliability ferroelectric process Very Fast Serial , -kilobit nonvolatile memory employing an advanced ferroelectric process. A ferroelectric random access memory or FRAM is nonvolatile but operates in other respects as a RAM. It provides reliable data retention for 10 Ramtron International
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1E10- FM25C160-P FM25C160-S
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