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ISL97801ARZ-TK Intersil Corporation High Power LED Driver; QFN20; Temp Range: -40° to 105°C pdf Buy
ISL78100ARZ-T Intersil Corporation High Power LED Driver; QFN20; Temp Range: -40° to 105°C pdf Buy
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"Emitting Diode"

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Abstract: from prototype products. Organic light emitting diode displays (2.4 and 5.5 inch): full-color active , Displays for the New Century ­­­ Organic light emitting diode display (1.3 inch): area-color passive , low-temperature polysilicon TFT LCD technology necessary to make highperformance organic light emitting diode , alliance, full-scale progress is now underway towards the realization of organic light emitting diode displays as the next generation of flat panel displays. Organic light emitting diode displays provide ... SANYO Electric
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datasheet

3 pages,
136.14 Kb

sanyo tft screen Brilliant Display Technology DIODE 6K diode blue stripe DOT matrix LED display full EP105 55inch sanyo display 2.5 inch organic light emitting diode sanyo lcd sanyo diode sanyo tft display red and blue stripe diode diode matrix for LED display SANYO TFT light emitting diode TEXT
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Abstract: DESCRIPTIO N HIGH RELIABILITY ° ° MTL1N6092 MTL1N6092.001X Light Emitting Diode Commercial (0 to +70 C operating temperature range) MTL1N6092 MTL1N6092.002X Light Emitting Diode Commercial (-40° to +85° C operating temperature range) MTL1N6092 MTL1N6092.003X Light Emitting Diode Commercial (-55° to 100° C operating temperature range) MTL1N6092 MTL1N6092.004X Light Emitting Diode Screened to JANTX level (-55° to 100° C operating temperature range) MTL1N6093 MTL1N6093.001X Light Emitting Diode Commercial (0° to ... Minco
Original
datasheet

2 pages,
64.79 Kb

"Emitting Diode" 1N6093 minco 1N6094 emitting diode 1n6092 jan datasheet light emitting diode MTL1N6092 MTL1N6093 MTL1N6094 002X 1N6092 light emitting diode TEXT
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Abstract: 3-13 PT4800FE000F PT4800FE000F GL4800E0000F GL4800E0000F tape using an infrared emitting diode with a bi-directional , being wound ontoaa into battery driven, the infrared emitting diode (GL4800E0000F GL4800E0000F) is pulse driven , the infrared emitting diode (GL4800E0000F GL4800E0000F) and phtotransistor (PT4800FE000F PT4800FE000F), it blocks the beam , Emitting Diodes 3-1 Chapter 3 ­ Use of Infrared Emitting Diodes 3-2 Chapter 3 ­ Use of Infrared Emitting Diodes 3-3 multiplied by n. Chapter 3 ­ Use of Infrared Emitting Diodes 3-4 ... Sharp
Original
datasheet

17 pages,
1177.14 Kb

13B1 Chapter CHAPTER 3 INFRARED DIODES PT4800FE000F infrared infrared transistor GL527V Infrared Emitting Diode Infrared Phototransistor infrared emitting CIRCUIT GL4800E0000F infrared diode TRANSISTOR C 2577 TEXT
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Abstract: SE3470/5470 SE3470/5470 AlGaAs Infrared Emitting Diode FEATURES · TO-46 metal can package · Choice of flat , DESCRIPTION The SE3470/5470 SE3470/5470 series consists of aluminum gallium arsenide infrared emitting diode mounted in a , design sn< supply the best products possible. SE3470/5470 SE3470/5470 AIGaAs Infrared Emitting Diode ELECTRICAL , possible. Honeywell 31 SE3470/5470 SE3470/5470 AIGaAs Infrared Emitting Diode Fig. 1 Radiant Intensity vs , . SE3470/5470 SE3470/5470 AIGaAs Infrared Emitting Diode Fig. 7 Spectral Bandwidth Fig. 8 Radiant Intensity vs Case ... OCR Scan
datasheet

12 pages,
403.73 Kb

SE3470/5470 SD3421/5421 SD3443/5443/5491 SD3410/54 SD5600 SE3470 SE5470 TEXT
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Abstract: Light Emitting Diode - SMD LED - Light Emitting Diode - SMD LED INTRODUCTION A , Automotive Application Product -1- Light Emitting Diode - SMD LED STRUCTURE -2- Light Emitting Diode - SMD LED PART NUMBERING SL 1 S 2 1 Abbreviation of 2 LED Type 3 , emitting color is single color. -3- Light Emitting Diode - SMD LED 4 Color 2 Symbol Color , Light Emitting Diode - SMD LED PACKAGING CARRIER TAPE Perforated square holes for inserting a chip ... Samsung Electro-Mechanics
Original
datasheet

14 pages,
473.96 Kb

smd transistor 501 COLOR CODE ON SMD DIODE DIODE SMD 33 MAX260 Samsung Electro-Mechanics Samsung Electro-Mechanics led smd diode j 25cycles SLSNNBS102TS SMD diode color code TEXT
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Abstract: , Connectorized Units DESCRIPTION Laser Diode, Inc.'s InGaAsP 1300nm surface emitting light emitting diode (LED) series offers high radiance and stability over temperature. The diodes are surface emitting structures constructed via liquid phase epitaxial growth. The surface emitting struc ture provides high , J , p i LASER DIODE INC. a e 12E D I 5302^05 0DDDM3fl 5 | LASER DIODE INC : T-4W 3 IRE-387-002 IRE-387-002 IRE-387-003 IRE-387-003 IRE-491 IRE-491 1300nm SURFACE EMITTING LED FEATURES Reliable Surface Emitting ... OCR Scan
datasheet

2 pages,
190.1 Kb

IRE387-002 IRE-387-002 TEXT
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Abstract: Top Emitting Infrared Diode (0805) HT-170IRAJ-XXXX HT-170IRAJ-XXXX Harvatek Surface Mount LED Data Sheet HT , -170IRAJ-XXXX -170IRAJ-XXXX August 20, 2009 Version of 1.0 Page 1/13 Top Emitting Infrared Diode (0805) HT , . HT-170IRAJ-XXXX HT-170IRAJ-XXXX August 20, 2009 Version of 1.0 Page 2/13 Top Emitting Infrared Diode (0805 , /13 Top Emitting Infrared Diode (0805) HT-170IRAJ-XXXX HT-170IRAJ-XXXX Product Specifications Test Current , , 2009 Version of 1.0 Page 4/13 Top Emitting Infrared Diode (0805) HT-170IRAJ-XXXX HT-170IRAJ-XXXX Label ... Harvatek
Original
datasheet

13 pages,
705.5 Kb

HT-170IRAJ-XXXX TEXT
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Abstract: Top Emitting Infrared Diode (1205) HT-260IRPJ-XXXX HT-260IRPJ-XXXX Harvatek Surface Mount LED Data Sheet HT , -260IRPJ-XXXX -260IRPJ-XXXX August 20, 2009 Version of 1.0 Page 1/13 Top Emitting Infrared Diode (1205) HT , . HT-260IRPJ-XXXX HT-260IRPJ-XXXX August 20, 2009 Version of 1.0 Page 2/13 Top Emitting Infrared Diode (1205 , /13 Top Emitting Infrared Diode (1205) HT-260IRPJ-XXXX HT-260IRPJ-XXXX Product Specifications Test Current , , 2009 Version of 1.0 Page 4/13 Top Emitting Infrared Diode (1205) HT-260IRPJ-XXXX HT-260IRPJ-XXXX Label ... Harvatek
Original
datasheet

13 pages,
713.78 Kb

HT-260IRPJ-XXXX TEXT
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Abstract: Top Emitting Infrared Diode (0603) HT-191IRPJ-XXXX HT-191IRPJ-XXXX Harvatek Surface Mount LED Data Sheet HT , -191IRPJ-XXXX -191IRPJ-XXXX August 20, 2009 Version of 1.0 Page 1/13 Top Emitting Infrared Diode (0603) HT , . HT-191IRPJ-XXXX HT-191IRPJ-XXXX August 20, 2009 Version of 1.0 Page 2/13 Top Emitting Infrared Diode (0603 , /13 Top Emitting Infrared Diode (0603) HT-191IRPJ-XXXX HT-191IRPJ-XXXX Product Specifications Test Current , , 2009 Version of 1.0 Page 4/13 Top Emitting Infrared Diode (0603) HT-191IRPJ-XXXX HT-191IRPJ-XXXX Label ... Harvatek
Original
datasheet

13 pages,
705.43 Kb

HT-191IRPJ-XXXX TEXT
datasheet frame
Abstract: Top Emitting Infrared Diode (0603) HT-191IRAJ-XXXX HT-191IRAJ-XXXX Harvatek Surface Mount LED Data Sheet HT , -191IRAJ-XXXX -191IRAJ-XXXX August 20, 2009 Version of 1.0 Page 1/13 Top Emitting Infrared Diode (0603) HT , . HT-191IRAJ-XXXX HT-191IRAJ-XXXX August 20, 2009 Version of 1.0 Page 2/13 Top Emitting Infrared Diode (0603 , /13 Top Emitting Infrared Diode (0603) HT-191IRAJ-XXXX HT-191IRAJ-XXXX Product Specifications Test Current , , 2009 Version of 1.0 Page 4/13 Top Emitting Infrared Diode (0603) HT-191IRAJ-XXXX HT-191IRAJ-XXXX Label ... Harvatek
Original
datasheet

13 pages,
688.25 Kb

HT-191IRAJ-XXXX TEXT
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Archived Files

Abstract Saved from Date Saved File Size Type Download
Type Features PDF Size Status IRL 80A GaAs infrared emitting diode. Clear plastic Matches phototransistor LPT 80 A 128 K 10.95 IRL 81A GaAIAs infrared emitting diode in the 271H LD 271HL 271HL GaAs infrared emitting diode, fabricated in a liquid phase epitaxy process. High 203 43 K 11.97 LD 274 Extremely narrow half angle. GaAs infrared emitting diode in groups. Same package as SFH 484 36 K 11.97 SFH 409 GaAs infrared emitting diode
/datasheets/files/siemens/products/37/3732.htm
Siemens 27/02/1998 7.16 Kb HTM 3732.htm
D1 A D Demit ;Gallium arsenide infrared emitting diode Vsense D K 0 ;Diode Current sense -> IF D1 A D Demit ;Gallium arsenide infrared emitting diode Vsense D K 0 ;Diode Current sense -> IF arsenide infrared emitting diode Vsense D K 0 ;Diode Current sense -> IF Hd R 0 Vsense 1 Rd R T arsenide infrared emitting diode Vsense D K 0 ;Diode Current sense -> IF Hd R 0 Vsense 1 Rd R T arsenide infrared emitting diode Vsense D K 0 ;Diode Current sense -> IF Hd R 0 Vsense 1 Rd R T
/datasheets/files/spicemodels/misc/spice_model_cd/mixed part list/spice-models-collection/opto.lib
Spice Models 29/07/2012 30.09 Kb LIB opto.lib
Miniature Type Features PDF Size Status LD 261 GaAs infrared emitting diode, fabricated in a liquid phase epitaxy process. High reliability. Available in bins. Same package as BPX 81 38 K 11.97 LD 260 LD 262. LD269 LD269 GaAs infrared emitting diode, fabricated in a liquid phase epitaxy emitting diode, fabricated in a liquid phase epitaxy process. High reliability. High radiant intensity.
/datasheets/files/siemens/products/37/3734.htm
Siemens 27/02/1998 3.66 Kb HTM 3734.htm
Miniature Type Features Size Status LD 261 GaAs infrared emitting diode, fabricated in a liquid LD 260 LD 262. LD269 LD269 GaAs infrared emitting diode, fabricated in a liquid phase epitaxy process. High reliability. Same package as BPX 80 series 45 K 11.97 SFH 405 GaAs infrared emitting diode, fabricated in a liquid phase epitaxy process. High reliability. High radiant intensity. High
/datasheets/files/infineon/products/37/3734.htm
Infineon 26/11/1998 3.75 Kb HTM 3734.htm
talk 480 K 03.96 IRL 80A GaAs infrared emitting diode. Clear plastic package with lateral 80 A 128 K 10.95 IRL 81A GaAIAs infrared emitting diode in the near infrared range.
/datasheets/files/siemens/products/37/374a2.htm
Siemens 28/02/1998 3.6 Kb HTM 374a2.htm
No abstract text available
/download/5693996-169542ZC/optocoup.zip ()
Infineon 19/02/2000 143.36 Kb ZIP optocoup.zip
CQX19 CQX19 GaAs Infrared Emitting Diode with Metal Socket cqx48 CQX48 CQX48 GaAs Infrared Emitting Diode in Side View Package cqy36 CQY36N CQY36N "GaAs Infrared Emitting Diode in Miniature (T-¾) Package" cqy37 CQY37N CQY37N "GaAs Infrared Emitting Diode in Miniature (T-¾) Package" cqy80n_g CQY80N CQY80N(G) Optocoupler Speed IR Emitting Diode in ∅ 5 mm (T-1¾) Package" tshf5400 TSHF5400 TSHF5400 "High Speed IR Emitting Diode in ∅ 5 mm (T-1¾) Package" tsil6400 TSIL6400 TSIL6400 "GaAs/GaAlAs IR Emitting Diodes in
/datasheets/files/temic/database/text/allparts.txt
Temic 12/03/1997 67.32 Kb TXT allparts.txt
No abstract text available
/download/26723725-849980ZC/allparts.xls
Temic 03/03/1997 149 Kb XLS allparts.xls
Metal Package Type Features PDF Size Status LD 242 GaAs infrared emitting diode, fabricated in a liquid phase epitaxy process. Cathode is electrically connected to the case. High reliability. Wide beam. Same package as BP 103, BPX 63, SFH 464, SFH 483. DIN humidity category in acc. with DIN 40 measurement (E 7800) 37 K 02.98 SFH 480 SFH 481 SFH 482 GaAIAs infrared emitting diode
/datasheets/files/siemens/products/37/3733.htm
Siemens 27/02/1998 4.64 Kb HTM 3733.htm
Metal Package Type Features Size Status LD 242 GaAs infrared emitting diode, fabricated in a liquid phase epitaxy process. Cathode is electrically connected to the case. High reliability. Wide beam. Same package as BP 103, BPX 63, SFH 464, SFH 483. DIN humidity category in acc. with DIN 40 040 GQG infrared emitting diode, fabricated in a liquid phase epitaxy process. Anode is electrically connected
/datasheets/files/infineon/products/37/3733.htm
Infineon 26/11/1998 5.58 Kb HTM 3733.htm