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"ESD Diode"

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Abstract: Using ESD Protection Diode Arrays Introduction As electronic appliances become more pervasive, and , . California Micro Devices manufactures a family of integrated ESD Protection Diode Arrays which are designed , derive maximum benefit from employing such ESD Protection Diode Arrays. The IEC-1000-4-2 IEC-1000-4-2 ESD Model , family of ESD protection diode arrays designed to withstand level-4 contact discharge as defined in the , 6 17 18 3.5 pF 3.0 pF 7.5 pF 7.5 pF Table 2: ESD Protection Diode Arrays Each channel of ... California Micro Devices
Original
datasheet

4 pages,
369.04 Kb

PACDN007 DN006 IEC 1000-4-2 ESD IEC-1000-4-2 PACDN002 PACDN004 PACDN006 AP-208 AP-209 IEC-100-4-2 TEXT
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Abstract: diodes. Since both diodes are in parallel the total capacitance of an ESD protection diode in , used. However, this configuration demands for an additional ESD protection diode to provide a path to , ESD protection diode, this is not a disadvantage. Figure 4 (c) shows a bi-directional configuration , capacitance of the ESD protection diode in bi-directional configuration is only half the capacitance of , in both directions in the case of an ESD event, the clamping voltage of an ESD protection diode in ... Infineon Technologies
Original
datasheet

22 pages,
851.17 Kb

BFP540ESD BGA615L7 BGA622L7 JESD22-A114 AN103 AN086 transistor application TVS diode Application Note rf POWER BJTs 22-A114D varistor BETA JESD22-A114D JESD22-A114-D TEXT
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Abstract: protection diode should be placed very close to the location where the ESD or other transients can occur , TVS diode Package V RWM ESD EFT Ipp max IR [V] [kV] (1) [A] (2) [A] (3 , The protection diode should be placed very close to the location where the ESD or other transients , protection diode should be placed very close to the location where the ESD or other transients can occur , diode should be placed very close to the location where the ESD or other transients can occur to keep ... Infineon Technologies
Original
datasheet

13 pages,
3440.45 Kb

SOT363 flash BGA728L7 ESD3V3U1U-02LRH ESD3V3U1U-02LS ESD5V3U1U-02LRH ESD5V3U1U-02LS ESD5V3U2U-03F ESD5V3U4RRS ESD8V0L1B-02LRH IEC61000-4-4 infineon product selection guide schema audio amplifier SODX infineon varistor low leakage tvs diode sc76 low leakage tvs diode sod323 schema sata data to usb TEXT
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Abstract: ESD protection devices. The right TVS diode has to be used. 1.1 Uni-directional TVS diode vs , uni-directional diode for positive AND negative ESD strikes in the same way. Most standard data signalling, Vcc , voltage". The ESD protection capability is granted for a bi-directional diode for positive AND negative ESD strikes in the same way. Use an bidirectional TVS diode for audio signals. Application Note , Headset Ear-phone Audio Amp. Time ESD Diode Audio_in Voltage +Vcc NO-DC_offset ... Infineon Technologies
Original
datasheet

9 pages,
401.61 Kb

TVS 0201 Diode symbian smd 02l latest gadgets ESD5V3S1B-02LS ESD protection C166 AN192 "ESD Protection" TEXT
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Abstract: varistor ESD protection with Peak Power Zener Transient Voltage Suppressors diode Figure 1 ­ , TH808x External ESD protection 3.2 ESD protection using Back-to-Back Zener Diode (Onsemi MMB27VCLT1 MMB27VCLT1 , TH808x External ESD protection 3.3 ESD protection using Back-to-Back Zener Diode (Onsemi MMB27VCLT1 MMB27VCLT1 , Schematic of the ESD protection with Back-to-Back Zener Diode The damage limit by using Back-to-back , Application note TH808x External ESD protection Application Hints for using external ESD ... Melexis
Original
datasheet

8 pages,
288.7 Kb

HIGH VOLTAGE DIODE 6kv DIODE 6kv 8kv DIODE wurth EMC Semiconductor 544a TH8082 742 wurth 150pf 6kv varistor 4kv diode zener 30c MMBZ27VCLT1 "ESD Protection" capacitor 6kv varistor 6kv SMD-Ferrit MMB27VCLT1 223 Varistor HM8130 wurth 742 792 15 20 kV generator schematic TEXT
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Abstract: the properties of the ESD diode. The ESD device must not disrupt the functionality of the system it , intended for use. At this voltage, the ESD diode will appear in the "off" state as a high impedance , . Reverse Breakdown Voltage, VBR: At this voltage, the ESD diode starts to conduct, or turn "on". The , applications where low capacitance is needed. DC Parameters The key DC parameters of an ESD diode are presented below. A typical IV characteristic curve for a unidirectional ESD diode is shown in Figure 1 ... ON Semiconductor
Original
datasheet

3 pages,
68.75 Kb

TVS Diode IMPORTANT PARAMETERS OF TVS ESD TVS how to test tvs diode ESD diode AND8308 "ESD Diode" AND8308/D TEXT
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Abstract: voltage level. Th erefore a so called "uni-directional" TVS diode for ESD protection fits very well here. Following requirements have to be fulfilled by a proper ESD protection diode. For all (wanted) signals , which has to be ESD protected. 2.1 Uni-directional TVS diode vs. Bi-directional TVS diode , diode for positive AND negative ESD strikes in the same way. Wanted signal positive voltage swing!! Vp , interfaces Design example for a 2-step ESD protection approach Bi-directional TVS diode: A bi-directional ... Infineon Technologies
Original
datasheet

11 pages,
370.04 Kb

fbas INFINEON TVS diode process TEXT
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Abstract: Protection AA(X) 1284 Terminator with ESD Protection AP(X) 1284 Terminator Network Diode Networks USD USB Port Network USB Port Network USU EDA Schottky Diode ESD Suppressor EDB Schottky Diode ESD Suppressor DNA Diode Termination Network/ESD Suppressor, 18 Channels DN2 Diode Termination Network/ESD Suppressor, 17 Channels DN3 Diode Termination Network/ESD Suppressor, 4 Channels DN4 Diode Termination Network/ESD Suppressor, 2Channels DN5 Diode Termination Network/ESD Suppressor, 19 Channels DN6 Diode ... OCR Scan
datasheet

1 pages,
277.81 Kb

t filter DIODE 19 9 resistor network resistor cross reference series RESISTOR capacitor NETWORK schottky diode cross reference diode TEXT
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Abstract: PESDxL5UF; PESDxL5UV; PESDxL5UY Low capacitance unidirectional fivefold ESD protection diode , Low capacitance unidirectional fivefold ElectroStatic Discharge (ESD) protection diode arrays in , very small 1.2 Features I I I I ESD protection of up to five lines Low diode capacitance , fivefold ESD protection diode arrays 1.4 Quick reference data Table 2. Quick reference data Tamb = 25 , unidirectional fivefold ESD protection diode arrays Table 3. Pinning .continued Pin Description ... NXP Semiconductors
Original
datasheet

17 pages,
96.55 Kb

smd marking t4 SOT363 PESD5V0L5UY nxp sot363 MARKING 16 NXP SMD DIODE MARKING CODE T4 Marking Code For PESD3V3L5UF TEXT
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Abstract: the properties of the ESD diode. The ESD device must not disrupt the functionality of the system it , intended for use. At this voltage, the ESD diode will appear in the "off" state as a high impedance , . Reverse Breakdown Voltage, VBR: At this voltage, the ESD diode starts to conduct, or turn "on". The , applications where low capacitance is needed. DC Parameters The key DC parameters of an ESD diode are presented below. A typical IV characteristic curve for a unidirectional ESD diode is shown in Figure 1 ... ON Semiconductor
Original
datasheet

3 pages,
61.55 Kb

AND8308 ESD TVS how to test tvs diode AND8308/D TEXT
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Archived Files

Abstract Saved from Date Saved File Size Type Download
* Technology: ESD DIODE * Device: Diode SMF51A SMF51A * Description: * Type: Typical (nom) * Model established: 20.11.2003, by Harald Stix, VSA/ASSP-VOE * Wafer: * Remarks: * Revision: 20.11.2003 * Simulation Model: * Simulator: PSPICE *BeginParam *IS=202.22E-12 22E-12 *N=1.5073 *RS=19.626E-3 626E-3 *IKF=1.0000E3 0000E3 *XTI=3 *EG=1.1100 *CJO=145.63E-12 63E-12 *M=.37098 *VJ=.68453 *FC=.5 *ISR=5.8393E-9 8393E-9 *NR=1.0637 *BV=56.926 *IBV=.12933 *TT=493.26E-9 26E-9 *EndParam *DEVICE=SMF51A SMF51A,D * SMF51A SMF51A D model
/datasheets/files/vishay/docs/85301/smf51a.txt
Vishay 13/01/2010 0.76 Kb TXT smf51a.txt
Intersil's HS-303RH HS-303RH VA inputs have a 200 ohm resistor between the digital input pin and the ESD diode to V+ and from V-. Our suggestion would be to use an outboard schottky diode between the input and V+ and V-
/datasheets/files/intersil/device_pages/faq_4588.html
Intersil 08/09/2006 7.58 Kb HTML faq_4588.html
clamp ESD diode specifications.   Answer The schematic of the IS-2981RH IS-2981RH is similar to IS-2981RH IS-2981RH, Schematic and ESD Protection Diodes View Online   Answer Id: 4864 : http://www.allegromicro.com/datafile/2981.pdf The IS-2981RH IS-2981RH has additional ESD protection diodes (cathode) 4. From GROUND (anode) to OUTPUT (cathode) Current through these ESD protection diodes
/datasheets/files/intersil/device_pages/faq_4864.html
Intersil 08/09/2006 7.94 Kb HTML faq_4864.html
; ############################################################################## ; ; Title Simulation Model for ESD diode ; ; Author Pit Schicketanz ; ; Description ADS model define resistor_switch_ESD8V0R1B ( _node1 _node2) model d1 Diode Is=0.001 Rs=0 N=1 Tt=1e-10 Cjo=1e-06 resistor_switch_ESD8V0R1B define diode_subckt_ESD8V0R1B ( _node1 _node2) model d3 Diode Is=3e-13 Rs=0 N=1 Tt=1e-10 Cjo=9.2e-12 Vj=0.7 M=0.35 Eg=1.11 Xti=1 Kf=0 Af=1 Fc=0.5 \ Bv=10.8 Ibv=0.001 Tnom=27 model d4 Diode
/datasheets/files/infineon/infineon_ads_design_kit_tvs/circuit/models/esd8v0r1b.net
Infineon 07/10/2011 2.34 Kb NET esd8v0r1b.net
; ############################################################################## ; ; Title Simulation Model for ESD diode ; ; Author Pit Schicketanz ( _node1 _node2) model d1 Diode Is=1e-18 Rs=0 N=1 Tt=1e-10 Cjo=1 Vj=0.7 M=0.3 Eg=1.11 Xti=3 Kf=0 Af=1 define diode_subckt_ESD5V3L1B ( _node1 _node2) model d3 Diode Is=4.446e-15 Rs=0 N=1 Tt=1e-10 model d4 Diode Is=4.406e-14 Rs=0 N=1 Tt=1e-10 Cjo=9.835e-12 Vj=1.2 M=0.3 Eg=1.06 Xti=3.648 \ Kf=0
/datasheets/files/infineon/infineon_ads_design_kit_tvs/circuit/models/esd5v3l1b.net
Infineon 07/10/2011 2.23 Kb NET esd5v3l1b.net
; ############################################################################## ; ; Title Simulation Model for ESD diode ; ; Author Pit Schicketanz ; ; Description ADS model | ; | | ; | | ; | | ; | | ; | | ; | | ; x-x ; | ; o 2 ; model dfwd Diode Is=1e-12 Rs=0 N=1 Tt=0 drev Diode Is=1e-11 Rs=0 N=1 Tt=0 Cjo=1e-15 Vj=1 M=0.5 Eg=1.11 Xti=3 Kf=0 Af=1 Fc=0.5 Bv=100 \ Ibv=0.001 Tnom=27 Nbv=1 IkModel=1 model dzen Diode Is=1e-11 Rs=0 N=1 Tt=0 Cjo=1e-14 Vj=1 M=0.5 Eg=1.11 Xti=3 Kf=0 Af=1 Fc=0.5 Bv=23 \ Ibv=0.001 Tnom=27 Nbv=1 IkModel=1 model dleak Diode Is=3.5e-17 Rs=0 N=55
/datasheets/files/infineon/infineon_ads_design_kit_tvs/circuit/models/esd18vu1b.net
Infineon 31/08/2011 4.57 Kb NET esd18vu1b.net
* ############################################################################## * * Title Simulation Model for ESD diode * * Author Pit Schicketanz * * Description
/datasheets/files/infineon/infineon_ads_design_kit_tvs/circuit/models/esd5v3l1b.lib
Infineon 07/10/2011 2.14 Kb LIB esd5v3l1b.lib
* ############################################################################## * * Title Simulation Model for ESD diode * * Author Pit Schicketanz * * Description
/datasheets/files/infineon/infineon_ads_design_kit_tvs/circuit/models/esd5v3l1b.hsp
Infineon 12/04/2011 2.13 Kb HSP esd5v3l1b.hsp
* ############################################################################## * * Title Simulation Model for ESD diode * * Author Pit Schicketanz * * Description $$$$$$$$$$$$$$$$$$$$$$$$$$$$$$$$$$$$$$$$$$$$$$$$$$$$$$$$$$$$ $$ $$ $$ Spi2a - SPICE to APLAC netlist converter, version 1.45 $$ $$ $$ $$ This file is created at Wed May 04 10:27:46 2011 $$ $$ with command: spi2a Z:\Discretes_Development\Diode. $$ $$ $$
/datasheets/files/infineon/infineon_ads_design_kit_tvs/circuit/models/esd5v3l1b_02ls.i
Infineon 06/10/2011 2.69 Kb I esd5v3l1b_02ls.i
* ############################################################################## * * Title Simulation Model for ESD diode * * Author Pit Schicketanz * * Description SPICE3
/datasheets/files/infineon/infineon_ads_design_kit_tvs/circuit/models/esd8v0r1b.lib
Infineon 07/10/2011 2.19 Kb LIB esd8v0r1b.lib