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Part Manufacturer Description PDF & SAMPLES
CS8421-EZZR Cirrus Logic Consumer Circuit, CMOS, PDSO20, 4.40 MM, LEAD FREE, MO-153,TSSOP-20
CS5480-INZ Cirrus Logic Analog Circuit, 1 Func, CMOS, PQCC24
CS4234-ENZR Cirrus Logic Analog Circuit, 1 Func, 6 X 6 MM, LEAD FREE, QFN-40
CDB2000-PC-LCO Cirrus Logic Evaluation, Design Tools Eval Bd Gen. Purpose PLL DC
CDB4349 Cirrus Logic Eval Bd 192kHz Str DAC w/VC 1Vrms
CDB470XD-DC28 Cirrus Logic Eval Bd - DF 2ch ADC 8ch DAC & 32bit DSP

"EDO Corporation"

Catalog Datasheet MFG & Type PDF Document Tags
Abstract: Diagram : Extended Data Output (EDO) Page Mode G-Link Technology Corporation G-Link Technology , (Rev 1) EDO Page Mode Read Cycle G-Link Technology Corporation G-Link Technology Corporation , ) EDO Page Mode Read - Modify - Write Cycle NOTE : DOUT = OPEN G-Link Technology Corporation G-Link , in 4ms interval. All inputs are TTL compatible. EDO Page Mode operation allows random access up , Supply. All inputs and Outputs are TTL compatible. Extended Data-Out(EDO) Page Mode operation G-Link Technology
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GLT41016 GLT41016-35J4 GLT41016-40J4 0VH10 GLT710008-15T GLT44016-40J4 2701N
Abstract: -cycle refresh in 32 ms. The GLT4160L04 provides EDO PAGE MODE operation which allows for fast data access , LVTTL compatible. Extended Data-Out (EDO) Page access cycle. Self-refresh Capability. (S-Version). , 20 ns G-Link Technology Corporation,Taiwan Web : www.glink.com.tw Email : sales@glink.com.tw , Data Inputs / Outputs +3.3V Power Supply Ground No Connection G-Link Technology Corporation , MEMORY ARRAY VDD VSS G-Link Technology Corporation,Taiwan Web : www.glink.com.tw Email G-Link Technology
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GLT4160L04E-70J3 GLT4160L04E-60J3 GLT4160L04E-50J3 GLT4160L04E-40J3 GLT4160L04-70J3 GLT4160L04-60J3
Abstract: -cycle refresh in 32 ms. The GLT4160L04 provides EDO PAGE MODE operation which allows for fast data access , LVTTL compatible. Extended Data-Out (EDO) Page access cycle. Self-refresh Capability. (S-Version). , Access Time (tCAC) 12 ns 12 ns 13 ns 15 ns G-Link Technology Corporation,Taiwan Web , Connection G-Link Technology Corporation,Taiwan Web : www.glink.com.tw Email : sales@glink.com.tw TEL , x 4 MEMORY ARRAY VDD VSS G-Link Technology Corporation,Taiwan Web : www.glink.com.tw G-Link Technology
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EDO Corporation GLT4160L04S-40J3 GLT4160L04-50J3 GLT4160L04-40J3 SOJ 24
Abstract: Cycle is optional. Doing so will facilitate compatibility with future EDO DRAMs. OfBM Corporation , compatibility with future EDO DRAMs. 28H4723 SA14-4225-03 Revised 4/96 ©IBM Corporation, 1996. All rights , facilitate compatibility with future EDO DRAMs. ©IBM Corporation, 1996. All rights reserved. Use Is , with future EDO DRAMs. OE = Don't care 28H4723 SA14-4225-03 Revised 4/96 ©IBM Corporation , will facilitate compatibility with future EDO DRAMs. OIBM Corporation, 1996. All rights reserved -
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IBM0116165 IBM0116165M IBM0116165B IBM0116165P 28H4722
Abstract: ) EDO Page Mode Read Cycle G-Link Technology Corporation,Taiwan Web : www.glink.com.tw Email , ) EDO Page Mode Read - Modify - Write Cycle NOTE : DOUT = OPEN G-Link Technology Corporation,Taiwan , interval. All inputs are TTL compatible. EDO Page Mode operation allows random access up to 256 x 16 , inputs and Outputs are TTL compatible. Extended Data-Out(EDO) Page Mode operation. HIGH , Technology Corporation,Taiwan Web : www.glink.com.tw Email : sales@glink.com.tw TEL : 886-2-27968078 G-Link Technology
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GLT41016-30J4 GLT41016-30TC GLT41016-35TC GLT41016-40TC GLT41016-45J4 GLT41016-45TC
Abstract: and accepts 1024-cycle refresh in 16ms interval. All inputs are TTL compatible. EDO Page Mode , (EDO) Page Mode operation. Self ­ refresh capability. (S-Version). Extended Temperature Available , 15 ns HIGH PERFORMANCE G-Link Technology Corporation G-Link Technology Corporation,Taiwan , Corporation G-Link Technology Corporation,Taiwan 2701Northwestern Parkway Santa Clara, CA 95051, U.S.A , Data Input Buffer X8 Y0.Y9 G-Link Technology Corporation G-Link Technology Corporation G-Link Technology
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1M x 16 EDO RAM GLT4160L16 40/42L 400MIL 44/50L
Abstract: -cycle refresh in 32 ms. The GLT4160L04 provides EDO PAGE MODE operation which allows for fast data access , LVTTL compatible. Extended Data-Out (EDO) Page access cycle. Self-refresh Capability. (S-Version). , G-Link Technology G-Link Technology Corporation,Taiwan 2701 Northwestern Parkway Santa Clara, CA , Corporation,Taiwan 2701 Northwestern Parkway Santa Clara, CA 95051, U.S.A. 6F, No. 24-2, Industry E. RD , x 4 MEMORY ARRAY VDD VSS G-Link Technology G-Link Technology Corporation,Taiwan 2701 G-Link Technology
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FPM RAM
Abstract: with future EDO DRAMs. © IB M Corporation, 1996. All rights reserved. Use is further subject to , will facilitate compatibility with future EDO DRAMs. © IB M Corporation, 1996. All rights reserved , future EDO DRAMs. 28H 4726 S A 1 4 -4 2 2 8 -0 2 R e v is e d 4 /9 6 © IB M Corporation, 1996 , Cycle is optional. Doing so will facilitate compatibility with future EDO DRAMs. © IB M Corporation , future EDO DRAMs. © IBM Corporation, 1996. All rights reserved. Use is further subject to the -
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IBM0117405 IBM0117405M IBM0117405B IBM0117405P 28H4725 28H4726
Abstract: will facilitate compatibility with future EDO DRAMs. ©IBM Corporation. All rights reserved. Use is , optional. Doing so will facilitate compatibility with future EDO DRAMs. ©IBM Corporation. All rights , is optional. Doing so will facilitate compatibility with future EDO DRAMs. ©IBM Corporation. All , optional. Doing so will facilitate compatibility with future EDO DRAMs. ©IBM Corporation. All rights , facilitate compatibility with future EDO DRAMs. ©IBM Corporation. All rights reserved. Use is further IBM
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IBM01178052M IBM0117805P2M IBM0117805M2M IBM0117805B2M 4221 transistor datasheet IBM0117805 IBM0117805M
Abstract: interval. All inputs are TTL compatible. EDO Page Mode operation allows random access up to 256 x 16 , inputs and Outputs are TTL compatible. Extended Data-Out(EDO) Page Mode operation. HIGH , Technology Corporation G-Link Technology Corporation, Taiwan 2701Northwestern Parkway Santa Clara, CA , Corporation G-Link Technology Corporation, Taiwan 2701Northwestern Parkway Santa Clara, CA 95051, U.S.A , : G-Link Technology Corporation G-Link Technology Corporation, Taiwan 2701Northwestern Parkway Santa G-Link Technology
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Abstract: optional. Doing so will facilitate compatibility with future EDO DRAMs. ©IBM Corporation. All rights , future EDO DRAMs. ©IBM Corporation. All rights reserved. Use Is further subject to the provisions at , with future EDO DRAMs. ©IBM Corporation. All rights reserved. Use is further subject to the , with future EDO DRAMs. ©IBM Corporation. All rights reserved. Use is further subject to the , facilitate compatibility with future EDO DRAMs. ©IBM Corporation. All rights reserved. Use is further -
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SA14-4228-03
Abstract: IBM0165405P 16M x 4 12/12 EDO DRAM EDO (Hyper Page) Mode Read Cycle (OE Control) ©IBM Corporation. All , IBM0165405B IBM0165405P 1 6 M x 4 12/12 EDO DRAM Features â'¢ 16,777,216 word by 4 bit , /Retention Time RAS Access Time jtc A C CAS before RAS Refresh EDO (Hyper Page) Mode Cycle Tim e , ©IBM Corporation. All rights reserved. Use is further subject to the provisions at the end of this document. Page 1 of 29 IBM0165405B IBM0165405P 1 6M X 4 12/12 EDO DRAM Ordering Information -
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SOJ-32 TSOP-32 IBM0165405B/P MS-024
Abstract: Cycle is optional. Doing so will facilitate compatibility with future EDO DRAMs. ©IBM Corporation , with future EDO DRAMs. ©IBM Corporation, 1996. All rights reserved. Use is further subject to the , future EDO DRAMs. ©IBM Corporation, 1996. All rights reserved. Use is further subject to the , with future EDO DRAMs. ©IBM Corporation, 1996. All rights reserved. Use is further subject to the , facilitate compatibility with future EDO DRAMs. ©IBM Corporation, 1996. All rights reserved. Use is -
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IBM014445 IBM014445B J-26/24 00D345 000345S
Abstract: optional. Doing so will facilitate compatibility with future EDO DRAMs. ©IBM Corporation, 1996. All , facilitate compatibility with future EDO DRAMs. ©IBM Corporation, 1996. All rights reserved. Use is , with future EDO DRAMs. ©IBM Corporation, 1996. All rights reserved. Use is further subject to the , compatibility with future EDO DRAMs. ©IBM Corporation, 1996. All rights reserved. Use is further subject to , . Doing so will facilitate compatibility with future EDO DRAMs. ©IBM Corporation, 1996. All rights IBM
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IBM01161651M IBM0116165P1M IBM0116165M1M IBM0116165B1M
Abstract: compatibility with future EDO DRAMs. ©IBM Corporation, 1995. All rights reserved. Use is further subject to , with future EDO DRAMs. ©IBM Corporation, 1995. All rights reserved. Use is further subject to the , with future EDO DRAMs. ©IBM Corporation, 1995. All rights reserved. Use is further subject to the , Cycle is optional. Doing so will facilitate compatibility with future EDO DRAMs. ©IBM Corporation , EDO DRAMs. OE = Don't care 28H4721 SA14-4223-01 Revised 12/95 ©IBM Corporation, 1995. All IBM
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IBM0118165 IBM0118165M IBM0118165B IBM0118165P
Abstract: IBM0165165B IBM0165165P 4M x 16 12/10 EDO DRAM Features â'¢ 4,194,304 word by 16 bit , 30ns J H rc ! Cycle Tim e j 84ns I 104ns I ; EDO (Hyper Page) Mode Cycle Time j 20ns i 25ns , 88H 2011 G A 1 4 -4 2 5 0 -0 2 R e v is e d 11 /97 ©IBM Corporation. All rights reserved. Use , IBM0165165P 4M x 16 12/10 EDO DRAM Ordering Information Part Number Power 5 Self Refresh IBM , ) Block Diagram 1/01 ©IBM Corporation. All rights reserved. Use is further subject to the -
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TSQP-50 IBM0165165B/P A14-4250-02
Abstract: x 8 12/11 EDO DRAM Read-Modify-Write Cycle | | : â'Hâ' or â'Lâ'™ ©IBM Corporation , EDO (Hyper Page) Mode Read Cycle (OE Control) ©IBM Corporation. All rights reserved. Use is , IBM0165805B IBM0165805P 8 M x 8 12/11 EDO DRAM Features â'¢ 8,388,608 word by 8 bit , © IBM Corporation. All rights reserved. Use is further subject to the provisions at the end of this document. Page 1 of 29 IBM0165805B IBM0165805P 8M x 8 12/11 EDO DRAM Ordering -
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IBM0165805B/P S-024 88H2009
Abstract: compatibility with future EDO DRAMs. ©IBM Corporation. All rights reserved. Use is further subject to the , with future EDO DRAMs. 28H 4720 S A 1 4 -4 2 2 6 -0 4 R e v is e d 11/96 ©IBM Corporation. All , facilitate compatibility with future EDO DRAMs. ©IBM Corporation. All rights reserved. Use is further , compatibility with future EDO DRAMs. ©IBM Corporation. All rights reserved. Use is further subject to the , with future EDO DRAMs. ©IBM Corporation. All rights reserved. Use is further subject to the -
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IBM0116405 IBM0116405M IBM0116405B IBM0116405P TSOP-26/24
Abstract: future EDO DRAMs. ©IBM Corporation, 1996. All rights reserved. Use is further subject to the , with future EDO DRAMs. 27H6242 S A 14 -4 2 3 2 -0 3 R evised 6 /9 6 ©IBM Corporation, 1996 , with future EDO DRAMs. ©IBM Corporation, 1996. All rights reserved. Use is further subject to the , IBM014405 IBM014405M IBM014405B IBM014405P 1 M x 4 10/10 EDO DRAM Features â'¢ 1,048,576 word , EDO (Hyper Page) Mode Cycle Time 25 ns â'¢ Hidden Refresh â'¢ Self Refresh (LP version only) â -
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J-26/20 D0D30Q7
Abstract: with future EDO DRAMs. ©IBM Corporation, 1996. All rights reserved. Use is further subject to the , with future EDO DRAMs. ©IBM Corporation, 1996. All rights reserved. Use is further subject to the , will facilitate compatibility with future EDO DRAMs. ©IBM Corporation, 1996. All rights reserved , will facilitate compatibility with future EDO DRAMs. ©IBM Corporation, 1996. All rights reserved , with future EDO DRAMs. ©IBM Corporation, 1996. All rights reserved. Use is further subject to the IBM
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IBM01181651M IBM0118165P1M IBM0118165M1M IBM0118165B1M lp 1610 SA14-4223-03
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