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BDX53B STMicroelectronics Complementary power Darlington transistors
TIP125 STMicroelectronics Complementary power Darlington transistors
TIP122 STMicroelectronics Complementary power Darlington transistor
BDX54C STMicroelectronics Complementary power Darlington transistors
TIP120 STMicroelectronics Complementary power Darlington transistors
2STW100 STMicroelectronics Transistors, Power Bipolar, Darlington

"Darlington Transistors"

Catalog Datasheet MFG & Type PDF Document Tags
Abstract: Darlington Complementary Silicon Power Transistors 40, 60, 80 V, 40 W . . . . 90 (PNP) 2N6040, 2N6042, (NPN) 2N6043*, 2N6045* Darlington, 8 A Complementary Silicon Power Transistors 60 V-100 V, 75 W . . . . . . 95 2N6052, 2N6058 2N6059 Darlington 12 A Complementary Silicon Power Transistors 80 -100 V , , 150 V 200 W . . . . . . . . . 116 Darlington 8 and 10 Ampere NPN Silicon Power Transistors 60 -80 V 65 , Watts . . . . . . . . . . . . . . . . . . 131 PNP Silicon Darlington Power Transistors 10 Amperes 60 -80 ON Semiconductor
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TIP295 mj150* darlington BJT BD139 TIP102 Darlington transistor MJ11029 MJ31193 npn darlington transistor 200 watts 2N3055A MJ15015 MJ15016 2N3055 MJ2955 2N3442
Abstract: d a te o f issue December 1990 NPN silicon Darlington power transistors PINNING - SOT199 DESCRIPTION PIN NPN epitaxial base transistors in a monolithic Darlington circuit for audio output , transistors R1 typ. 5 f t R2 typ. 80 f t Fig.2 Darlington circuit diagram. December 1990 bbSBSBl , silicon Darlington power transistors BDV65F/65AF/65BF/65CF LIM ITING VALUES In accordance with the , Philips Components Product specification NPN silicon Darlington power transistors BDV65F/65AF -
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Darlington NPN Silicon Diode BDV64F/ 64AF/64BF/64CF BDV65F BDV65AF BDV65BF BDV65CF
Abstract: Philips Semiconductors Preliminary specification Silicon Darlington power transistors PHILIPS INTERNATIONAL DESCRIPTION NPN epitaxial base transistors in a monolithic Darlington circuit in a TO-126 (SOT32 , specification Silicon Darlington power transistors PHILIPS INTERNATIONAL SbE » BD675A/BD677A/BD679A , Semiconductors Preliminary specification Silicon Darlington power transistors PHILIPS INTERN ATIONAL , 261 Philips Semiconductors Preliminary specification Silicon Darlington power transistors -
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BD677A BD679A D679A NPN POWER DARLINGTON TRANSISTORS BD676A BD678A BD680A BD675A
Abstract: ' ^ « ^ .^Cj Preliminary specification Silicon Darlington power transistors BD675A/BD677A/BD679A , ' ^ « ^ .^Cj Preliminary specification Silicon Darlington power transistors BD675A/BD677A/BD679A , Silicon Darlington power transistors BD675A/BD677A/BD679A PHILIPS INTERNATIONAL SbE D â  ?HDfl5b 00^75 , specification Silicon Darlington power transistors BD675A/BD677A/BD679A PHILIPS INTERNATIONAL SbE ]> (A) 1 , Silicon Darlington power transistors BD675A/BD677A/BD679A PHILIPS INTERNATIONAL jjbE D M 711Qfi5b 0045^7 -
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3067 004BT7S T-33-29 DQM2C17
Abstract: ^etv To T h is 6 ^ ° " ' Extremely High Gain Darlington in SOT-223 package. Continued Our newest Darlington transistors, the CZT250K with a hp^ = 250,000 and the CZT900K with a hp^ = 900,000 offer extremely , solid-state relays. · CZT250K · CZT900K High Gain Darlington High Gain Darlington see page 420 see page 426 5 Amp Power Transistors in both SOT89 AND SOT-223 Cases. The latest addition to our POWER , Power Transistors offer high speed up to a frequency of 200 MHz. Ideal for applications requiring high -
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TRANSISTOR 3000W 400V SMD transistor 26 sot 23 npn 400V switching transistor sot-23 Lighting Controllers high gain PNP POWER TRANSISTOR "SOT23" TRANSISTOR SMD HP 89 CMPD6001 CMPD6001A CMPD6001C CMPD6001S CMPD3003 CMPD3003A
Abstract: Transistors 2 2-1 Power Transistors . 14 2-1-1 Transistors for Audio Amplifiers . 14 · Complementary Transistors for Output . 14 · Complementary Transistors for Output built-in Temperature Compensation 14 · Transistors for Driver and Temperature Compensation . 14 2-1-2 Transistors for SMPS -
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SLA5058 SLA5046 2SC5586 2SC5487 transistor 2SC5586 2SA2003 SLA5065 2SA1295 2SC3264 AC100V AC200V SIP12P SIP15P SLA5037 SLA5047
Abstract: Philips Semiconductor» Preliminary specification Silicon Darlington power transistors BD675A/BD677A/BD679A DESCRIPTION NPN epitaxial base transistors in a monolithic Darlington circuit in a TO , transistors BD675A/BD677A/BD679A R1 typ. 3kn R2typ. 120» Fig.2 Darlington circuit diagram. LIMITING VALUES , Philips Semiconductors Preliminary specification Silicon Darlington power transistors BD675A/BD677A , . Julv 1991 261 Philips Semiconductor» Silicon Darlington power transistors Preliminary -
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UBC105 088h BD677-A U-25-C 003MM31 UBC102 003444S
Abstract: PW-MOLD Built-in Darlin 2SD2481 Transistors for Pwer Amp NPN PW-MOLD Built-in Darlington 2SD1160 Y , ) 3 10000.0 140 100 Output(70W) 3 -10000.0 -140 Darlington output(60W) 3 7000.0 140 Darlington output(60W) 3 -7000.0 -140 Darlington output(70W) 3 8000.0 140 Darlington output(70W) 3 -8000.0 -140 Darlington output(70W) 3 8000.0 160 Darlington output(70W) 3 -8000.0 -160 Output(40W) 3 , (140W) 3 -15000.0 -200 Darlington output(70W) 3 7000.0 140 Darlington output(70W) 3 -7000.0 -140 -
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2SC2235 2SA1932 2SA1943 2SC4793 2sa1837 2sC5200, 2SA1943 2sC5200, 2SA1943, 2sc5198 2SC4684 datasheets 2sc5200 2sa1930 transistor equivalent 2SC1627A 2SA817A 2SA965 2SC3665 2SA1425
Abstract: Darlington power transistors PINNING - SOT199 PIN 1 2 3 DESCRIPTION base collector emitter DESCRIPTION PNP epitaxial base transistors in a monolithic Darlington circuit for audio output stages and general , PNP silicon Darlington power transistors BDV64F/64AF/64BF/64CF T- 33- 31 R1 typ. 5 Î Î R2 typ , specification PNP silicon Darlington power transistors FHÏ l Î p T T n TERNATIONAL BDV64F/64AF/64BF/64CF , Product specification PNP silicon Darlington power transistors PHILIPS INTERNATIONAL CHARACTERISTICS -
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BDV65F/ 65AF/65BF/65CF BDV64F BDV64AF BDV64BF BDV64CF
Abstract: NPN silicon Darlington power transistors DESCRIPTION NPN epitaxial base transistors in a monolithic , NPN silicon Darlington power transistors BDV65F/65AF/65BF/65CF R1 typ. 5 Ã2 R2 typ. 80 £1 Fig , Respective Manufacturer Philips Components Product specification N PN silicon Darlington power transistors , Manufacturer Philips Components Product specification NPN silicon Darlington power transistors BDV65F/65AF , Philips Components Product specification NPN silicon Darlington power transistors BDV65F/65AF/65BF/65CF -
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BC 560 philips BDV66F current amplifier note darlington MBBO12 65F/65AF/65BF/65CF 7Z77MI S3T31 MBC023
Abstract: Darlington power transistors DESCRIPTION NPN epitaxial base transistors in a monolithic Darlington circuit , Manufacturer Philips Components Product specification NPN silicon Darlington power transistors BDV65F/65AF , Manufacturer Philips Components Product specification NPN silicon Darlington power transistors BDV65F/65AF , Its Respective Manufacturer Philips Components NPN silicon Darlington power transistors Product , Philips Components Product specification NPN silicon Darlington power transistors BDV65F/65AF/65BF/65CF -
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philips 7277B SOT-199 MBB012 T-33-2 00M3375 0DM337
Abstract: BDV64F/64AF/64BF/64CF PNP silicon Darlington power transistors DESCRIPTION PNP epitaxial base transistors in a monolithic Darlington circuit for audio output stages and general amplifier and switching , Product specification PNP silicon Darlington power transistors BDV64F/64AF/64BF/64CF r" ¿ J_ R1 rs* j , specification PNP silicon Darlington power transistors BDV64F/64AF/64BF/64CF LIMITING VALUES In accordance , Darlington power transistors BDV64F/64AF/64BF/64CF 90% Fig.3 Switching times waveforms. -Vim 16.5 V -
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USB012 sot199 lem HA B0V64B BDV64 53T31 7Z77498 7Z77492 10SOT199
Abstract: ] > 711002b 00M33bû bT2 « P H I N BDV65F/65AF/65BF/65CF NPN Silicon Darlington power transistors PINNING , transistors in a monolithic Darlington circuit for audio output stages and general amplifier and switching , ; < < 655 Philips Components Product specification NPN silicon Darlington power transistors D I L , Components Product specification NPN silicon Darlington power transistors PHILIPS INTERNATIONAL , silicon Darlington power transistors PHILIPS INT ERNATIONAL CHARACTERISTICS Tj = 25 °C unless otherwise -
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711D 00M33 DM337 T--33--
Abstract: SF.C 2018 M Darlington stage + 2 NPN transistors Etage Darlington + 2 transistors NPN TO-101 -15 +125 15 50 100 500 677 SF.C 2036 M Dual Darlington Double Darlington TO-101 0 +85 15 50 100 200 677 SF.C 2046 EC 1 differential pair + 3 NPN transistors 1 paire différentielle + 3 transistors NPN , TO-101 (CB-1281 Linear integrated circuits - transistors arrays Circuits intégrés linéaires - réseaux de transistors Type Type Case Boiter toper (°C) VCEO (V) min. 'c (mAI max. h21E llc -
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TDB3003 sf.c amplifier CASE TO-101 sfc 2046 Transistors TDB3001 TDB3002
Abstract: Issu e April 18B1 BDS60/60A/60B/60C PN P silicon Darlington power transistors PINNING - SOT223 DESCRIPTION PIN 1 2 3 4 PN P silicon power transistors in a monolithic Darlington , Components PNP silicon Darlington power transistors ^ BDS60/60A/60B/60C c R1 typ. R2typ , silicon Darlington power transistors BDS60/60A/60B/60C CHARACTERISTICS T, = 25 °C unless otherwise , silicon Darlington power transistors 0Q34sas aaa Product specification BDS60/60A/60B/60C -
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BDS61/61A/61B/61C BDS60 BDS60A BDS60B BDS60C MBB018
Abstract: silicon Darlington power transistors date of issue December 1990 PINNING - SOT199 DESCRIPTION PIN 1 2 3 PNP epitaxial base transistors in a m onolithic Darlington circu it fo r audio , Darlington power transistors R1 typ. 5 Q R2 typ. 80 Q Fig.2 Darlington circu it diagram. n o rA m h , Philips Components PNP silicon Darlington power transistors BDV64F/64AF/64BF/64CF LIM ITING , Components PNP silicon Darlington power transistors BDV64F/64AF/64BF/64CF CHARACTERISTICS Tj = 25 -
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7Z77491 7ZS1018 0034A00
Abstract: Silicon Darlington power transistors Preliminary «pacification BD676A/678A/680A DESCRIPTION PNP epitaxial base transistors in a monolithic Darlington circuit in a TO-126 (SOT32) plastic envelope , transistors BD676A/678A/680A R1 typ. 3 kfi R2 typ. 80 ft Fig.2 Darlington circuit diagram. LIMITING VALUES , Silicon Darlington power transistors THERMAL CHARACTERISTICS BD676A/678A/680A SYMBOL PARAMETER , Copyrighted By Its Respective Manufacturer Philips Semiconductors Silicon Darlington power transistors -
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B0680 MBC077 B068C S3131 003MM5
Abstract: /60A/60B/60C PNP silicon Darlington power transistors DESCRIPTION PNP silicon power transistors In a , PN P silicon Darlington power transistors BDS60/60A/60B/60C R1 typ. R2typ. 3ki2 80 ii Fig , Product specification PNP silicon Darlington power transistors BDS60/60A/60B/60C , Darlington power transistors BDS60/60A/60B/60C , 774 â  Philips Components Product specification PNP silicon Darlington power transistors BDS60/60A -
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UBB018 S80 SMD smd npn darlington BDS61/61 B/61C M5B002 DD345 IEC134
Abstract: omitted. * : Darlington type § : High-Frequency type * : High hpe type · MPT3 Package # : High hFE type * : Darlington type Transistors/Surface · CPT3 Package Mounting Type VcEO 20 32 lc , Transistors/Surface Mounting Type Quick Reference MOS FET Transistors · EMT3 Package · , t'S * * 1 k-*i . -T .* Transistors · SMT3 Package VcEO \ (V) 6 11 15 18 , Negative symbol for PNP type is omitted. * : High hpE type * ; Darlington type · PSD3 Package VcEO -
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SST8245 2SA1870 2sa1807 2SA1514K 2SC3906K 2SC4713K5 2SC3838K5 2SC3837K1 2SC2413K5
Abstract: 2-1 Power Transistors 2-1-4 Part No. 2SA1186 2SA1215 2SA1216 2SA1262 2SA1294 2SA1295 2SA1303 , General Purpose Transistors by Part No. VCBO(V) ­150 ­160 ­180 ­60 ­230 ­230 ­150 ­160 ­180 ­60 ­80 ­180 , -3P MT-200 (2-screw mount) LAPT LAPT LAPT LAPT LAPT Darlington Darlington Darlington Darlington Darlington Darlington Darlington Darlington Darlington Darlington Darlington Darlington Darlington Darlington Darlington Darlington Darlington Darlington Darlington Darlington 2 5 1 2 5 3 1 4 5 3 1 2 3 1 2 1 5 4 LAPT 5 Allegro MicroSystems
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2SC2922 2SC3264 TO-3P 2SC5370 2SD26 2SA1386 2SA1386A 2SA1488 2SA1488A 2SA1492 2SA1493
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