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"DIN 45910-T

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Abstract: 4 T 7 ■ ■ A-05-11-03 Electrolytic Capacitors for High Requirements, Special Style for ... OCR Scan
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4 pages,
127.55 Kb

ROE roederstein TEXT
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Abstract: requirements specified in DIN 41257 and IEC 384-4 Jong life grade”. P l o A t r i/ ^ u a l i i a e * DIN , 0.08 0.08 0.08 f l t l 0.53 0.25 0.12 0.06 0.88 0.41 0.19 0.10 0.72 0.34 0.16 0,08 , 16 28 Older no. i i J t £3^ f i| a iT l Weight (g) l l 09 CD (100 Hz; 20°G) (lim it values) i S T tan 5 s' Dimensions D x L (mm) (nominal dimensions ... OCR Scan
datasheet

4 pages,
216.96 Kb

TEXT
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Abstract: 85C49 at=S40°C min. 15,000 h a t 70°C min. 2,000 h at 85°C min. 500 h at 105°C for S250V S250V Overall failure rate S 3 , posed ripple current. Order no. M s 0 3 E S R (Q) (100 Hz; 20°C) (limit values) s c s t s. s Ö .S T « if Ia i s l= .l Admissible ripple current (mA/100 Hz) 85°C 49 ^3433 G- 1 ... OCR Scan
datasheet

2 pages,
228.41 Kb

Roederstein Electronics Roederstein DIN 41332 EKMG din 41332 EKM 00 CC 222 G Roederstein EkM Roederstein EKM capacitors Roederstein EKm TEXT
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Abstract: ELEC TRONICS 70211=24 O G G i n O 23E D A— 11— 05— 01 ~ T ~ Q Low-Voltage , 0.21 1000020000! 0.40 0.72 0.40 0.72 0.35 0.64 0.35 0.64 0.32 0.56 0.32 0.56 . — T ... OCR Scan
datasheet

4 pages,
131.65 Kb

TEXT
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Abstract: ROEDERSTEIN ELECTRONICS S3E D ?asib54 oooiias i ~T A -0 5 -1 1-01 Roederstein Low-Voltage Electrolytic Capacitors Axial, Polarized, Special Capacitor for Audio-Frequency application DIN 41237 and 45910, Part 127 The EBAZ / EGAZ types are speciaistyles, polarized, with lightly etched ano des. They are expecially suited for ap plication in audio-frequency networks. Electric values: DIN , EGAZ EGAZ EGAZ EGAZ EGAZEGAZ *-L · * c n + 41 EBAZ EGAZ +H i« 0 > 8 ; * it li V t 90 ... OCR Scan
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4 pages,
443.36 Kb

din 41332 EGAZ ROEderstein EBAZ capacitors ROEderstein EG capacitor ROEDERSTEIN EG capacitors ROEderstein ele capacitor Roederstein Electronics Roederstein EB Roederstein DIN 41332 EG Roederstein Roederstein EGt Roederstein EG TEXT
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Abstract: « [ }°U !( ‘r I! ! ! t 9 D - jJ ii t ii 1 —A k- — i*0,8 | t f »I â , pF 50 — T Frequency in Hz 100 200 500 1000 2000 5000 10000 20000 40 63 100 Impedance , .E4 DQD1112 DQD1112 4 53E D T k Low-Voltage Electrolytic Capacitors Axial, Bipolar, Special Capacitors , . (lim it values) (1 k H z ; 2 0 °q tan 5 l a s t (nominal dimensions) Dimensions 0 ... OCR Scan
datasheet

4 pages,
245.69 Kb

ROE roederstein TEXT
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Abstract: ROEDERSTEIN ELECTRONICS 23 E D 7Ô21&EM D0D1SQQ T -, Roederstein :i 4 -ÛÎ-/I - 0 2 Electrolytic Capacitors Special Style for Vertical Mounting, Polarized, Etched Anodes, DIN 41253 and DIN 45910, Part 1210 Electric values: DIN 41332 DIN 41253 pertinent style standard DIN 45910 part 121:0 (without quality certificate) EGD 3 negative solder pins for 0 16-30 mm (EGD) 2 negative , Vertical Mounting, Polarized, Etched Anodes, DIN 41253 and DIN 45910, Part 1210 T e ch n ical sp e cifica ... OCR Scan
datasheet

3 pages,
322.56 Kb

ROEDERSTEIN EG capacitors Capacitor EGD Series Roederstein EG 2200 EkM Roederstein Roederstein DIN 41332 EG Roederstein EKM capacitors roederstein capacitor ek din 41332 ROEderstein EG capacitor EGD Roederstein Din 41253 41253 Roederstein EGD roederstein capacitor ek series Roederstein EG Roederstein EKm Roederstein EK TEXT
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Abstract: ROEDERSTEIN ELECTRONICS S3E D 7fl21fciE4 G G D 1 1 3 â T ' A-05-11-01 Low-Voltage Electrolytic Capacitors with Radial Leads in Aluminium Case, Insulated, Polarized, pulse-proof Miniature electrolytic capacitors for ver tical mounting In printed circuits with particularly small dimensions. Electric values: DIN 41332 Generic specifications: DIN 45910 (= CECC 30,000) Sectional , . 500 h a t 105°C (3,000 h / 85°C and 750 h / 105°C upon request) Reference reliability: See "General ... OCR Scan
datasheet

2 pages,
197.35 Kb

Roederstein Electronics Roederstein EKF Roederstein DIN 41332 din 41332 TEXT
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Abstract: fe322 °C 125°C Case diamater (8.7) 10 mm min. 240,000 h min. 10,000 h min. 2,500 h min. 1,000 h t i h h h h ... OCR Scan
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2 pages,
215.78 Kb

EkM Roederstein DIN 138 EKM 00 CC 222 G Roederstein Roederstein Electronics EKM cap EKM capacitors Roederstein EKm TEXT
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Abstract: ROEDERSTEIN ELECTRONICS 23E D 7f l 21bEW 0012bfl 0 /V-05- /V-05- *11- 03 T Roederstein Polarized Electrolytic Capacitors 16 to 350 VDC, for High Requirements with Central Attachment, Etched Anode, Pulse-Proof Design: Electrolytic capacitors for professional applications in cylindrical metal case with central thread M 18 and excesspressure relief. The negative pole is conducted out separately. The negative pole Is connected to the case by menas of the electrolyte. Polarized, pulseproof. Accessories ... OCR Scan
datasheet

2 pages,
218.26 Kb

roederstein gpf roederstein eyl gpf 40 85 56 ROEDERSTEIN ELECTRONICS 23E D 41247 Roederstein Electronics TEXT
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Archived Files

Abstract Saved from Date Saved File Size Type Download
1000 h, V DSmax /V CEmax , T vjmax 1000 h, DC, 66 % of voltage class, T vjmax - 20 K Heiß- Gate Stress Test DIN 45930, CECC 50000-4.5.2 1000 h, V GSmax /V GEmax ,T 50000-4.4.3 1000 h, T stgmax (= + 125 °C) 1000 h, T stgmax Tieftemperaturlagerung 1000 h, T stgmin (=
/datasheets/files/semikron/skcweb/d/semineu/zuver.html
Semikron 10/05/2004 11.98 Kb HTML zuver.html
TBUF.NC.2.O:row.N.long.2 TBUF.NE.2.O:row.N.long.2 TBUF.NA.2.O:row.N.long.2 Addnet N307 TBUF.NA.2.T TBUF.NA.1.T TBUF.MA.2.T TBUF.MA.1.T TBUF.OA.2.T TBUF.OA.1.T TBUF.PA.2.T TBUF.PA.1.T ND.X NProgram N307 TBUF.NA.2.T:col.A.local.0 TBUF.NA.1.T:col.A.local.0 TBUF.MA.2.T:col.A.local.2 TBUF.MA.1.T:col.A.local.2 row.N.local.9:col.A.local.0 TBUF.OA.2.T:col.A.local.2 NProgram N307 TBUF.OA.1.T:col.A.local.2 TBUF.PA.2.T:col.A.local.0 TBUF.PA.1.T:col.A.local.0 row.P.local.9:col.A.local.0 col.A.local.2:row.O.local.7 OC.24.1.18 OC.24.1.11
/datasheets/files/xilinx/bbs/swhlp/synopsys/verilog/align_st/align_st.odf
Xilinx 01/06/1995 20.27 Kb ODF align_st.odf
NProgram VAL61 VAL61 TBUF.CB.2.O:row.C.long.2 TBUF.CC.2.O:row.C.long.2 Addnet N307 TBUF.CC.2.T TBUF.CC.1.T TBUF.BC.2.T TBUF.BC.1.T TBUF.DC.2.T TBUF.DC.1.T TBUF.EC.2.T TBUF.EC.1.T JD.X NProgram N307 TBUF.CC.2.T:col.C.long.1 TBUF.CC.1.T:col.C.long.1 TBUF.BC.2.T:col.C.long.1 TBUF.BC.1.T:col.C.long.1 TBUF.DC.2.T:col.C.long.1 TBUF.DC.1.T:col.C.long.1 NProgram N307 TBUF.EC.2.T:col.C.long.1 TBUF.EC.1.T:col.C.long.1 EB.24.1.8 NProgram VAL61 VAL61 col.B.local.4:row.D.long.1-S TBUF.DD.1.O:row.D.long.1 Addnet N310 TBUF.DD.1.T
/datasheets/files/xilinx/bbs/swhlp/synopsys/verilog/align_st/align_st.lca
Xilinx 05/06/1995 19.33 Kb LCA align_st.lca
:row.B.long.1 TBUF.BB.1.O:row.B.long.1 TBUF.BC.1.O:row.B.long.1 Addnet N255 TBUF.BC.1.T TBUF.BC.2.T TBUF.CC.2.T TBUF.CC.1.T TBUF.DC.2.T TBUF.DC.1.T TBUF.EC.2.T TBUF.EC.1.T HD.X NProgram N255 TBUF.BC.1.T:col.C.long.1 TBUF.BC.2.T:col.C.long.1 TBUF.CC.2.T:col.C.long.1 TBUF.CC.1.T:col.C.long.1 TBUF.DC.2.T:col.C.long.1 TBUF.DC.1.T:col.C.long.1 NProgram N255 TBUF.EC.2.T:col.C.long.1 TBUF.EC.1.T:col.C.long.1 row.H.local.4 TBUF.CF.1.O:row.C.long.1 Beginpath X10 Pathnet X10_1 X10_2 Endpath Addnet N256 TBUF.CF.1.T
/datasheets/files/xilinx/bbs/swhlp/synopsys/vhdl/align_st/align_st.lca
Xilinx 05/06/1995 18.86 Kb LCA align_st.lca
> TBUF.MB.1.O:row.M.long.1 Addnet N255 TBUF.MB.1.T TBUF.MB.2.T TBUF.NB.2.T TBUF.NB.1.T TBUF.OB.2.T TBUF.OB.1.T TBUF.PB.2.T TBUF.PB.1.T LD.X NProgram N255 TBUF.MB.1.T:col.B.long.1 TBUF.MB.2.T:col.B.long.1 TBUF.NB.2.T:col.B.long.1 TBUF.NB.1.T:col.B.long.1 TBUF.OB.2.T:col.B.long.1 TBUF.OB.1.T:col.B.long.1 NProgram N255 TBUF.PB.2.T:col.B.long.1 TBUF.PB.1.T:col.B.long.1 row.M.local.4:col.B.long.1-L MB.24.1.9 MB.24.1.20 MC.24.1.9 :row.N.long.1 TBUF.NE.1.O:row.N.long.1 Addnet N256 TBUF.NE.1.T TBUF.NE.2.T TBUF.OE.2.T TBUF.OE.1.T TBUF.PE.2.T
/datasheets/files/xilinx/bbs/swhlp/synopsys/vhdl/align_st/align_st.odf
Xilinx 30/05/1995 20.25 Kb ODF align_st.odf
:row.M.long.3-l MQ.24.1.16 MQ.24.1.10 row.M.local.5:PAD48 PAD48.I2 Addnet N253 ND.X TBUF.NC.2.T TBUF.NC.1.T TBUF.OC.2.T TBUF.OC.1.T TBUF.PC.2.T TBUF.PC.1.T TBUF.MC.2.T TBUF.MC.1.T Netdelay N253 TBUF.NC.2.T 3.4 TBUF.NC.1.T 3.4 TBUF.OC.2.T 3.4 TBUF.OC.1.T 3.4 TBUF.PC.2.T 3.4 TBUF.PC.1.T 3.4 TBUF.MC.2.T 3.4 TBUF.MC.1.T 3.4 Program N253 } {119G149 119G149} {119G130 119G130} NProgram N253 col.C.long.1:TBUF.PC.2.T col.C.long.1:TBUF.PC.1.T col.C.long.1:TBUF.OC.2.T col.C.long.1:TBUF.OC.1.T col.C.long.1:TBUF.NC.2.T col.C.long.1:TBUF.NC.1.T col.C.long.1
/datasheets/files/xilinx/bbs/swhlp/synopsys/vhdl/align_st/align_st.lcb
Xilinx 30/05/1995 28.3 Kb LCB align_st.lcb
: ~ 10.1ns ( 16.1ns) To: T pin to PAD, Blk ID2 : 15.0ns ( 31.1ns) From: Blk : ~ 10.1ns ( 16.1ns) To: T pin to PAD, Blk ID0 : 15.0ns ( 31.1ns) From: Blk XOE to P45.T : ~ 10.1ns ( 16.1ns) To: T pin to PAD, Blk ID3 : ~ 10.1ns ( 16.1ns) To: T pin to PAD, Blk ID1 : 15.0ns ( 31.1ns) From: Blk XWAIT to P77.T : 0.5ns ( 6.5ns) To: T pin to PAD, Blk -WAIT
/datasheets/files/xilinx/pcmcia/pc1.dly
Xilinx 31/01/1996 46.59 Kb DLY pc1.dly
No abstract text available
/download/77553373-960598ZC/xapp050o.zip ()
Xilinx 05/09/1996 408.2 Kb ZIP xapp050o.zip
No abstract text available
/download/79209327-960599ZC/xapp050v.zip ()
Xilinx 05/09/1996 354.24 Kb ZIP xapp050v.zip
analog input + 30 mA T stg Storage temperature range -65 to +150 5 C T L Lead Temperature (soldering, 10s Max. 50 5 C/W ELECTRICAL CHARACTERISTICS (V CC = 5V + 5%, T amb = 0 to 70 5 C; Typical characteristics are speci - fied at V CC = 5V, T amb = 25 5 C; all signal are referenced to GND, unless otherwise BRDO pin a t 64 kb/s and its clock associated o the RCLO pin at 64kHz. When SIG is at "0", the
/datasheets/files/stmicroelectronics/stonline/books/ascii/docs/1573-v1.htm
STMicroelectronics 20/10/2000 80.94 Kb HTM 1573-v1.htm