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ISL73096RHVX Intersil Corporation RF POWER TRANSISTOR
ISL73127RHVF Intersil Corporation RF POWER TRANSISTOR
ISL73128RHVF Intersil Corporation RF POWER TRANSISTOR
ISL73096RHVF Intersil Corporation RF POWER TRANSISTOR
CA3240AEZ Intersil Corporation Dual, 4.5MHz, BiMOS Operational Amplifier with MOSFET Input/Bipolar Output; PDIP8; Temp Range: -40° to 85°C
CA3240EZ Intersil Corporation Dual, 4.5MHz, BiMOS Operational Amplifier with MOSFET Input/Bipolar Output; PDIP8; Temp Range: -40° to 85°C

"Bipolar Transistor"

Catalog Datasheet MFG & Type PDF Document Tags
Abstract: Bipolar Transistor Bridge Driver Buffer (Analog) Connector Magnetic Core Current Regulator Diode Quartz , Bipolar Transistor Instrument Amplifier Isolation Amplifier Junction Field-Effect Transistor Level , Diode Pressure Sensor Power Bipolar Transistor Power Driver (Analog) Power MOSFET Radio System Rectifier Relay Driver RF Bipolar Transistor RF Mosfet Schottky Diode Sense Amplifier Sample-and-Hold Amplifier , Model Bipolar Transistor Bipolar Transistor Bipolar Transistor Bipolar Transistor Bipolar Transistor -
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Q2N4401 Q2N2907A Q2SC1815 D1N750 Q2N1132 q2n2907a- RD91EB
Abstract: LNA 2SK2113 2SC4784 2SC4791 2SC4926 2SC5080 3SK228 3SK239A GaAs HEMT Silicon NPN Bipolar Transistor Silicon NnN Bipolar Transistor Silicon NPN Bipolar Transistor Silicon NPN Bipolar Transistor GaAs N , 2SC4784 2SC4926 2SC5080 Silicon NPN Bipolar Transistor Silicon NPN Bipolar Transistor Silicon NPN Bipolar , Silicon NPN Bipolar Transistor Silicon NPN Bipolar Transistor Silicon NPN Bipolar Transistor Silicon NPN Bipolar Transistor GaAs N Channel Dual Gate FET GaAs N Channel Dual Gate FET Low Noise High Frequency -
OCR Scan
HWCB613 varicap diodes BIPOLAR TRANSISTOR dual gate mosfet in vhf amplifier hitachi SAW Filter p channel mosfet gsm module with microcontroller PF0032 PF0040 PF0042 PF0045A PF0065 PF0065A
Abstract: Contents Selection Guide 4 RF Bipolar Transistors & Active Bias Controller 4 RF Switches 6 , RF Bipolar Transistors & Active Bias Controller fT < 24GHz Type/Polarity 4 Maximum Ratings , SOT343 SOT343 1) Vdrop = VS ­ VCE 5 RF Bipolar Transistors VCO and RF Modules Type/Polarity , protection 4kV at RFin (Transistor base), remaining pins 2kV HBM (Human Body Model) 2) Intergated ESD , Booster Transistor [V] [mA] [mA] [V] Protection Features Package Family Overvoltage Infineon Technologies
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2n2222a SOT23 TRANSISTOR SMD MARKING CODE s2a 1N4148 SMD LL-34 TRANSISTOR SMD CODE PACKAGE SOT23 2n2222 sot23 1N4148 SOD323 BF517 BF770A BF771 BF775 BF799 BF799W
Abstract: large transistor die with a fine structure is required. Bipolar and MOS TRANSISTOR FABRICATION As , amplifier fundamentals 1.1.1 Transmitting transistor design Bipolar transistor dies 1.1.1.1 THE , total channel width) is used. Dimensioning is then very similar to that of a bipolar transistor , the emitter ballast resistors of a bipolar transistor is not required. This is because the , channel (gate) length. As for bipolar devices, the process used to manufacture a MOS transistor is Philips Semiconductors
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equivalent transistor bc 107 modern transistor substitute RF Bipolar Transistor VDMOS DEVICE RF NPN POWER TRANSISTOR 5 WATT 2.4 GHZ NPN planar RF transistor MGM011 BLV861 BLV2045
Abstract: Small Signal Bipolar Transistor Selection Guide Typical Minimum Noise Figures and Associated Gain , 10 15 20 25 30 35 Input Power, P in (dBm) Small Signal Bipolar Transistor , 0.1 0.2 0.3 0.4 0.5 1.0 Frequency, f (GHz) 2.0 5.0 5 3-3 Small Signal Bipolar Transistor , 3-71 3-71 3-35 3-35 3-35 3-35 3-35 3-189 3-189 3-189 3-5 Small Signal Silicon Bipolar Transistor , Bipolar Transistor Selection Guide SURFACE MOUNT BIPOLAR TRANSISTORS FOR LOW CURRENT, LOW VOLTAGE -
OCR Scan
NE02135 NE64535 73412 CHIP transistor 348 NE889 NE68039 NE64500 NE46134 NE85634 NE46734 NE85619 NE68119 NE68519
Abstract: DISCRETE SEMICONDUCTORS DATA SHEET Transistor Safe Operating Area (SOAR) Power Bipolar , Transistor Safe Operating Area (SOAR) Power Bipolar Transistors 1998 Nov 24 3 Philips Semiconductors Transistor Safe Operating Area (SOAR) Power Bipolar Transistors 1998 Nov 24 4 Philips Semiconductors Transistor Safe Operating Area (SOAR) Power Bipolar Transistors 1998 Nov 24 5 Philips Semiconductors Transistor Safe Operating Area (SOAR) Power Bipolar Philips Semiconductors
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transistor transistor equivalent book transistors bipolar transistors Power Bipolar Transistors
Abstract: S-5725 Series HIGH-SPEED BIPOLAR HALL EFFECT LATCH www.sii-ic.com © Seiko Instruments Inc , %), halogen-free *1. The option can be selected. Bipolar latch VOUT = "L" at S pole detection VOUT = "H" at S , -23-3 · SNT-4A Seiko Instruments Inc. 1 HIGH-SPEED BIPOLAR HALL EFFECT LATCH S-5725 Series , function HIGH-SPEED BIPOLAR HALL EFFECT LATCH S-5725 Series VDD Sleep / Awake logic *1 *1 OUT , HIGH-SPEED BIPOLAR HALL EFFECT LATCH S-5725 Series Product Name Structure 1. Product name S-5725 x x B x x Seiko Instruments
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S-5725CNBL0-M3T1U
Abstract: S-5725 Series HIGH-SPEED BIPOLAR HALL EFFECT LATCH www.sii-ic.com Rev.2.4_00 © Seiko , power-down circuit: â'¢ Lead-free (Sn 100%), halogen-free Bipolar latch VOUT = "L" at S pole detection , -4A Seiko Instruments Inc. 1 HIGH-SPEED BIPOLAR HALL EFFECT LATCH S-5725 Series Rev , Figure 2 2 Seiko Instruments Inc. HIGH-SPEED BIPOLAR HALL EFFECT LATCH S-5725 Series Rev , Seiko Instruments Inc. 3 HIGH-SPEED BIPOLAR HALL EFFECT LATCH S-5725 Series Rev Seiko Instruments
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Abstract: MOSFET as an N-Channel device. Page 5 bipolar transistors Analysis of many types of transistor is , silicon or germanium. If the analyser has found a bipolar transistor (normal transistor) on the test , circuit (I SC) Peak test voltage across open circuit (VOC) Bipolar transistor collector test current (I C) Bipolar transistor collector-emitter test voltage (V CEO) Bipolar transistor acceptable gain (H FE) Bipolar transistor gain resolution (H FE) Bipolar transistor measurable gain (H FE) Bipolar Peak Electronic Design
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DCA50 DCA50e 6F22 germanium transistors NPN MN1604 SK17
Abstract: Voltage Insulated Gate Bipolar Transistor) Modules INSULATED TYPE CM1800HCB-34N G IC , 79.4 ±0.3 38 +1 0 3 - M4 NUTS HVIGBT (High Voltage Insulated Gate Bipolar Transistor , TYPE 4th-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules MAXIMUM RATINGS , Gate Bipolar Transistor) Modules Sep. 2009 2 MITSUBISHI HVIGBT MODULES CM1800HCB-34N 4th-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules HIGH POWER SWITCHING USE INSULATED -
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Abstract: Voltage Insulated Gate Bipolar Transistor) Modules INSULATED TYPE CM900HG-90H G IC , Insulated Gate Bipolar Transistor) Modules May 2009 1 MITSUBISHI HVIGBT MODULES CM900HG-90H HIGH , nF nF ÂuC V Âus Âus HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules May , Bipolar Transistor) Modules HIGH POWER SWITCHING USE INSULATED TYPE THERMAL CHARACTERISTICS Symbol , . HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules May 2009 3 MITSUBISHI HVIGBT -
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Abstract: HVIGBT MODULES CM2400HC-34N th 4 -Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor , Insulated Gate Bipolar Transistor) Modules Dimensions in mm HVM-1035-C 1 of 7 CONFIDENTIAL , HVIGBT (High Voltage Insulated Gate Bipolar Transistor) MODULES MAXIMUM RATINGS Symbol Conditions , Tj = 125 °C, Ls = 100 nH Inductive load HVIGBT (High Voltage Insulated Gate Bipolar Transistor , -Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) MODULES HIGH POWER SWITCHING USE Mitsubishi
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Abstract: transistor Second Breakdown of bipolar transistor BVDSS or BVCEO Log IDS Figure 2. Comparison of SOA for Power MOSFET and Power Bipolar Transistor 10 us 100 us IDM 1 ms ID 10 ms D.C , reviewed. In addition, the differences between Power MOSFET maximum ratings and Power Bipolar Transistor maximum ratings will be discussed. MOSFET VS. Bipolar Transistor MOSFETs have two major advantages , , they are not practical. To drive a Bipolar Transistor at its rated peak current would require an -
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all power transistor high power pulse generator with mosfet robert fried
Abstract: S-5725 Series HIGH-SPEED BIPOLAR HALL EFFECT LATCH www.sii-ic.com © Seiko Instruments Inc , %), halogen-free*2 Bipolar latch VOUT = "L" at S pole detection VOUT = "H" at S pole detection Nch open drain , -4A Seiko Instruments Inc. 1 HIGH-SPEED BIPOLAR HALL EFFECT LATCH S-5725 Series Block Diagrams 1 , . CMOS output product 2. 1 Without power-down function HIGH-SPEED BIPOLAR HALL EFFECT LATCH S , Seiko Instruments Inc. 3 HIGH-SPEED BIPOLAR HALL EFFECT LATCH S-5725 Series Product Name Seiko Instruments
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transistor marking code
Abstract: Application Note 21 Issue 2 January 1996 Bipolar Transistor Considerations for Battery Powered , Generation Bipolar Transistor Expensive VCE(sat) t e m p e r a t u r e c om p e n sa t i o n , aims to provide a general overview of this Zetex bipolar transistor technology with particular , Fast 3. Zetex 3rd Generation Bipolar Transistor Expensive VCE(sat) t e m p e r a t u r e c , ) This application note aims to provide a general overview of this Zetex bipolar transistor technology Zetex Semiconductors
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FMMT717 ZETEX T 1049 rele 12V 10A ZETEX 1049 zetex line TRANSISTOR REPLACEMENT GUIDE ZDT1049 zetex 795a AN21-
Abstract: Insulated Gate Bipolar Transistor) Modules CM1000E4C-66R IC . VCES , Bipolar Transistor) MODULES HVM-1055-A 1 of 9 MITSUBISHI HVIGBT MODULES CM1000E4C-66R 4 -Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules th HIGH POWER SWITCHING USE , energy (Note 6) J/P HVIGBT (High Voltage Insulated Gate Bipolar Transistor) MODULES HVM , Gate Bipolar Transistor) Modules th HIGH POWER SWITCHING USE INSULATED TYPE Symbol Item Powerex
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Abstract: S-5725 Series HIGH-SPEED BIPOLAR HALL EFFECT LATCH www.sii-ic.com © Seiko Instruments Inc , %), halogen-free*2 Bipolar latch VOUT = "L" at S pole detection VOUT = "H" at S pole detection Nch open drain , -4A Seiko Instruments Inc. 1 HIGH-SPEED BIPOLAR HALL EFFECT LATCH S-5725 Series Block Diagrams 1 , .2.1_00 2. CMOS output product 2. 1 Without power-down function HIGH-SPEED BIPOLAR HALL EFFECT LATCH S , Seiko Instruments Inc. 3 HIGH-SPEED BIPOLAR HALL EFFECT LATCH S-5725 Series Product Name Seiko Instruments
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Abstract: Voltage Insulated Gate Bipolar Transistor) Modules HIGH POWER SWITCHING USE INSULATED TYPE MAXIMUM , Gate Bipolar Transistor) Modules Jul. 2005 MITSUBISHI HVIGBT MODULES CM1200HG-66H 3rd-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules HIGH POWER SWITCHING USE INSULATED , Gate Bipolar Transistor) Modules Jul. 2005 MITSUBISHI HVIGBT MODULES CM1200HG-66H HIGH POWER SWITCHING USE INSULATED TYPE 3rd-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules Mitsubishi
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Abstract: Voltage Insulated Gate Bipolar Transistor) Modules Jul. 2005 MITSUBISHI HVIGBT MODULES CM1200HC-50H 3rd-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules HIGH POWER SWITCHING , Gate Bipolar Transistor) Modules Jul. 2005 MITSUBISHI HVIGBT MODULES CM1200HC-50H 3rd-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules HIGH POWER SWITCHING USE INSULATED , (High Voltage Insulated Gate Bipolar Transistor) Modules Jul. 2005 MITSUBISHI HVIGBT MODULES -
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Abstract: Insulated Gate Bipolar Transistor) Modules Jul. 2005 MITSUBISHI HVIGBT MODULES CM1200HC-66H 3rd-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules HIGH POWER SWITCHING USE INSULATED , Gate Bipolar Transistor) Modules Jul. 2005 MITSUBISHI HVIGBT MODULES CM1200HC-66H 3rd-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules HIGH POWER SWITCHING USE INSULATED , (High Voltage Insulated Gate Bipolar Transistor) Modules Jul. 2005 MITSUBISHI HVIGBT MODULES -
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