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Part Manufacturer Description PDF & SAMPLES
CA3240AEZ Intersil Corporation Dual, 4.5MHz, BiMOS Operational Amplifier with MOSFET Input/Bipolar Output; PDIP8; Temp Range: -40° to 85°C
CA3240EZ Intersil Corporation Dual, 4.5MHz, BiMOS Operational Amplifier with MOSFET Input/Bipolar Output; PDIP8; Temp Range: -40° to 85°C
CD22M3494EZ Intersil Corporation 16x8x1 BiMOS-E Crosspoint Switch; PDIP40, PLCC44; Temp Range: -40° to 85°C
CD22M3494SQZ Intersil Corporation 16x8x1 BiMOS-E Crosspoint Switch; PDIP40, PLCC44; Temp Range: -40° to 85°C
EL5164IWZ Intersil Corporation IC,OP-AMP,SINGLE,BIPOLAR,TSOP,6PIN,PLASTIC
ISL55014IEZ-T7 Intersil Corporation MMIC Silicon Bipolar Broadband Amplifier; SC706; Temp Range: -40° to 85°C

"Bipolar PROM"

Catalog Datasheet MFG & Type PDF Document Tags
Abstract: 1) 256-Bit TTL Bipolar PROM (32 x 8) 256-Bit TTL Bipolar PROM (32 x 8) 256-Bit TTL Bipolar PROM (32 , ) Field-Programmable Logic Sequencer (16 X 48 X 8) 4K-Bit TTL Bipolar PROM (512 x 8) 256-Bit TTL Bipolar PROM (32 x 8) 256-Bit TTL Bipolar PROM (32 x 8) 256-Bit TTL Bipolar PROM (32 x 8) 1K-Bit TTL Bipolar PROM (256 x 4) 1K-Bit TTL Bipolar PROM (256 x 4) 1K-Bit TTL Bipolar PROM (256 x 4) 1K-Bit TTL Bipolar PROM (256 x 4 , 82HS321B 82HS641A 82HS641B 83C451 83C552 83C751 87C51 87C451 87C552 87C751 87C752 2K-Bit TTL Bipolar PROM -
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bipolar PROM S4LS04 plhs18p8 PLHS18 82HS641 8x60 LM119 LM124 LM139 LM139A PLC18V8Z PLC415
Abstract: 82S181 82S181A 82S185/82S185A/82S185B 82S191/82S191A 82HS321A 82HS641A/B 256-bit TTL bipolar PROM (32 x 8 ) . 4K-bit TTL bipolar PROM (512 x 8) . 1K-bit TTL bipolar PROM (256x 4 ) . 1K-bit TTL bipolar PROM (256 x 4 ) . 2K-bit TTL bipolar PROM (512 x 4 ) . 2K-bit TTL bipolar PROM (512 x 4 ) . 4K-bit TTL bipolar PROM (1 0 2 4 -
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1OF16 54F163 80C51 80C31BH/80C51BH/ 80C31BH-16/80C51BH-16 80C32/80C32-16 80C52/80C52-16 80C45V83C451
Abstract: Value -.3 to 7 5.5 -20 -65 to +175 +175 Unit V V mA °C °C Bipolar PROM Output or Supply Voltage - Vcc HARRIS INTEGRATED CIRCUITS BIPOLAR PROM 7600 Series The 7600 Series of Bipolar PROMs is manufactured using the Bipolar Junction Isolation process with reliability proven nickel chromium fusible links , "3-State" Outputs "3-State" Outputs Active Pull-up Outputs Generic PROM High Speed Generic PROM Generic PROM High Speed Generic PROM Generic PROM High Speed Generic PROM Generic PROM High Speed Generic PROM Very -
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LA 7610A 7610A 7641 prom PROM 7611 G00DM7 20-LEAD
Abstract: bipolar equiv alents or beyond with reduced power levels of CMOS tech nology. They are capable of 2001 , Differential Memory Cell The 4K, 8K, and 16K PROM (except "A" version) use an N-Well CMOS technology along , transistor cell is 0.43 square mils and the die size is 19,321 square mils for the 2K by 8 PROM (Figure 1). , series devices use the 1.2 micron PROM I technology. The 16K "A" series devices and the future 256K PROMs use the 0.8 micron PROM II tech nology with a single ended ijiemory cell. The process pro vides basic -
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BIPOLAR PROM PROGRAMMING SPECIFICATION Cypress introduction to CMOS PROMs CMOS differential amplifier cascode Bipolar PROM programming cypress eproms sense amplifier bitline memory device
Abstract: Bipolar Generic PROM Series a Advanced Micro Devices R E L IA B IL IT Y R E P O R T R E L IA , Date M ay 1966 5-235 Bipolar Generic PROM Series ADVANCED MICRO DEVICES BIPOLAR PROMS This , -II TECHNOLOGY 5-236 Bipolar Generic PROM Series Figure 1 is a cross section of an IMOX II transistor. A , . This process will be used on most new and advanced bipolar PROM products. It will provide performance , Advanced Micro Devices' bipolar PROM designs have the general configuration shown in Figure 4. Although the -
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AM27S20 Kontron MPP80S Am27S180 Am27S40 kontron mpp MPP80S 163S4 CD00986
Abstract: Access Time Pins Package 512 x 8 Bi-Polar PROM 25/50 ns 16 J JBP 512 x 8 Bi-Polar PROM 45/75 ns 20 J PROM JBP 256 x 8 Bi-Polar PROM 55/110 ns 20 J PROM JBP 32 x 8 Bi-Polar PROM 35/70 ns 20 J Texas Instruments , Texas Instruments Incorporated L 8 -10 M J B Product Nomenclature BIPOLAR MEMORIES ­ PROM Example: JBP 18 S 03 0 Prefix M J Package Type J = Ceramic DIP JBP = Texas Instruments
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18S030 28L22 28L42 28S42 pAL programming Guide tibpal programming 9616a MIL-PRF-38535 AL16R8-15 TIBPAL16R6-15 TIBPAL16R4-15 TIBPAL16L8-20 TIBPAL16R8-20
Abstract: PROM speeds while consuming only 25% of the power required by its Bipolar counterparts. A further advantage of the WS57C51C over Bipolar PROM devices is the fact that it utilizes a proven EPROM technology , alternative to those designs which are comm itted to a Bipolar PROM footprint. It is a direct drop-in replacement for a Bipolar PROM of the same architecture (16K x 8). No software, hardware or layout changes , WS57C51C MILITARY HIGH SPEED 16Kx 8 CMOS PROM/RPROM KEY FEATURES â'¢ Ultra-Fast Access Time -
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27S51 N82HS1281 S57C51C WS5751C WS57C51C-45 WS57C51C-55
Abstract: HARRIS INTEGRATED CIRCUITS BIPOLAR PROM 7600 Series The 7600 Series of Bipolar PROMs is manufactured using the Bipolar Junction Isolation process with reliability proven nickel chromium fusible links , Bipolar PROM PACKAGING AVAILABLE (See page 88): E-16-LEAD DUAL INLINE R -20-LEAD DUAL INLINE J -24-LEAD , Pull-up Outputs Generic PROM High Speed Generic PROM Generic PROM High Speed Generic PROM Generic PROM High Speed Generic PROM Generic PROM High Speed Generic PROM Very High Speed Generic PROM Generic PROM -
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7611 prom mi 7641 1024X4 4096X4 7621 prom 512X4 28-LEAD MIL-M-38510
Abstract: Bipolar PROM speeds while consuming only 25% of the power required by its Bipolar counterparts. A further advantage of the WS57C51C over Bipolar PROM devices is the fact that it utilizes a proven EPROM technology , alternative to those designs which are committed to a Bipolar PROM footprint. It is a direct drop-in replacement for a Bipolar PROM of the same architecture (16K x 8). No software, hardware or layout changes , WS57C51C MILITARY HIGH SPEED 16K x 8 CMOS PROM/RPROM KEY FEATURES â'¢ Ultra-Fast Access Time STMicroelectronics
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WS57C51C-70 MIL-STD-883C WS57C51C-45CMB WS57C51C-45DMB WS57C51C-45TMB WS57C51C-55CMB
Abstract: is manufactured in an advanced CMOS technology which enables it to operate at Bipolar PROM speeds while consuming only 25% of the power required by its Bipolar counterparts. A further advantage of the WS57C51C over Bipolar PROM devices is the fact that it utilizes a proven EPROM technology. This enables the , which are comm itted to a Bipolar PROM footprint. It is a direct drop-in replacement for a Bipolar PROM , WS57C51C MILITARY HIGH SPEED 16K x 8 CMOS PROM/RPROM KEY FEATURES · Ultra-Fast Access Time - -
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WS57C51C-55DMB WS57C51C-55TMB
Abstract: (RPROM). It is manufactured in an advanced CMOS technology which enables it to operate at Bipolar PROM , the WS57C51C over Bipolar PROM devices is the fact that it utilizes a proven EPROM technology. This , to those designs which are committed to a Bipolar PROM footprint. It is a direct drop-in replacement for a Bipolar PROM of the same architecture (16K x 8). No software, hardware or layout changes need , WS57C51C MILITARY HIGH SPEED 16Kx 8 CMOS PROM/RPROM KEY FEATURES â'¢ Pin Compatible with -
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Abstract: manufactured in an advanced CMOS technology which enables it to operate at Bipolar PROM speeds while consuming only 25% of the power required by its Bipolar counterparts. A further advantage of the WS57C51C over Bipolar PROM devices is the fact that it utilizes a proven EPROM technology. This enables the entire , are committed to a Bipolar PROM footprint. It is a direct drop-in replacement for a Bipolar PROM of , WS57C51C MILITARY HIGH SPEED 16Kx 8 CMOS PROM/RPROM KEY FEATURES · Ultra-Fast Access Time - 4 -
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Abstract: is manufactured in an advanced CMOS technology which enables it to operate at Bipolar PROM speeds while consuming only 25% of the power required by its Bipolar counterparts. A further advantage of the WS57C51C over Bipolar PROM devices is the fact that it utilizes a proven EPROM technology. This enables the , which are com m itted to a Bipolar PROM footprint. It is a direct drop-in replacement for a Bipolar PROM , WS57C51C MILITARY HIGH SPEED 16Kx 8 CMOS PROM/RPROM KEY FEATURES · Ultra-Fast Access Time -
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NC040
Abstract: (RPROM). It is manufactured in an advanced CMOS technology which enables it to operate at Bipolar PROM , the WS57C51C over Bipolar PROM devices is the fact that it utilizes a proven EPROM technology. This , to those designs which are committed to a Bipolar PROM footprint. It is a direct drop-in replacement for a Bipolar PROM of the same architecture (16K x 8). No software, hardware or layout changes need , WS57C51C MILITARY HIGH SPEED 16K x 8 CMOS PROM/RPROM KEY FEATURES · Ultra-Fast Access Time WaferScale Integration
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A12 marking CERDIP 28 PINS cerdip z PACKAGE
Abstract: PROM speeds while consuming only 25% of the power required by its Bipolar counterparts. A further advantage of the WS57C51C over Bipolar PROM devices is the fact that it utilizes a proven EPROM technology , WS57C51C provides a low power alternative to those designs which are committed to a Bipolar PROM footprint. It is a direct drop-in replacement for a Bipolar PROM of the same architecture (16K x 8). No software , WS57C51C MILITARY HIGH SPEED 16K x 8 CMOS PROM/RPROM KEY FEATURES · Ultra-Fast Access Time STMicroelectronics
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Abstract: advanced CMOS technology which enables it to operate at Bipolar PROM speeds while consuming only 25% of the power required by its Bipolar counterparts. A further advantage of the WS57C43C over Bipolar PROM , after assembly. The WS57C43C is configured in the standard Bipolar PROM pinout which provides an easy , WS57C43C MILITARY HIGH SPED 4K x 8 CMOS PROM/RPROM KEY FEATURES · Ultra-Fast Access Time - *ACC = 3 5 ns · Pin Compatible with 4K x 8 Bipolar PROMs · Immune to Latch-UP - Up to 200 mA - -
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WS5743C WS57C43B WS57C43C-35 WS57C43C-45 WS57C43C-55 WS57C43C-70
Abstract: advanced CMOS technology which enables it to operate at Bipolar PROM speeds while consuming only 25% of the power required by its Bipolar counterparts. A further advantage of the WS57C49C over Bipolar PROM , after assembly. The WS57C49C is configured in the standard Bipolar PROM pinout which provides an easy , WS57C49C MILITARY HIGH SPEED 8K x 8 CMOS PROM/RPROM KEY FEATURES · Ultra-Fast Access Time - *acc = 35 ns - t Cs = 20 ns · Pin Compatible with Bipolar PROMs · Immune to Latch-UP - Up to 200 -
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S57C49C WS57C49B WS57C49C-35 WS57C49C-45 WS57C49C-55 WS57C49C-70
Abstract: an advanced CMOS technology which enables it to operate at Bipolar PROM speeds while consuming only , Bipolar PROM devices is the fact that it utilizes a proven EPROM technology. This enables the entire , both before and after assembly. The WS57C43C is configured in the standard Bipolar PROM pinout which , WS57C43C MILITARY HIGH SPED 4K x 8 CMOS PROM/RPROM KEY FEATURES · Ultra-Fast Access Time - *A C C = 35 ns · Pin Compatible with 4K x 8 Bipolar PROMs · Immune to Latch-UP - Up to 200 mA -
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S57C43C WS57C43C-35CMB WS57C43C-35TMB WS57C43C-45TMB WS57C43C-55TMB
Abstract: advanced CMOS technology which enables it to operate at Bipolar PROM speeds while consuming only 25% of the power required by its Bipolar counterparts. A further advantage of the WS57C49C over Bipolar PROM , before and after assembly. The WS57C49C is configured in the standard Bipolar PROM pinout which provides , WS57C49C MILITARY HIGH SPEED 8K x 8 CMOS PROM/RPROM KEY FEATURES · Ultra-Fast Access Time · Pin Compatible with Bipolar PROMs · Immune to Latch-UP - t ACC = 35 ns - t CS = 20 ns - WaferScale Integration
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smd transistor marking A11 smd a10 SMD a7 Transistor smd marking a7 smd marking A8 smd transistor marking A10 WS57C49C-35CMB WS57C49C-35TMB WS57C49C-35DMB WS57C49C-45CMB WS57C49C-45DMB WS57C49C-45TMB
Abstract: manufactured in an advanced CMOS technology which enables it to operate at Bipolar PROM speeds while consuming , Bipolar PROM devices is the fact that it utilizes a proven EPROM technology. This enables the entire , patterns both before and after assembly. The WS57C49C is configured in the standard Bipolar PROM pinout , WS57C49C MILITARY HIGH SPEED 8K x 8 CMOS PROM/RPROM KEY FEATURES â'¢ Ultra-Fast Access Time â'¢ Pin Compatible with Bipolar PROMs â'¢ Immune to Latch-UP â'" ^ACC = 35 ns â'" t cs = 20 ns -
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WS57C49C-55CMB WS57C49C-55DMB WS57C49C-55FMB WS57C49C-55TMB WS57C49C-70CMB WS57C49C-70TMB
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