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"Bipolar PROM"

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Abstract: 1) 256-Bit TTL Bipolar PROM (32 x 8) 256-Bit TTL Bipolar PROM (32 x 8) 256-Bit TTL Bipolar PROM (32 , ) Field-Programmable Logic Sequencer (16 X 48 X 8) 4K-Bit TTL Bipolar PROM (512 x 8) 256-Bit TTL Bipolar PROM (32 x 8) 256-Bit TTL Bipolar PROM (32 x 8) 256-Bit TTL Bipolar PROM (32 x 8) 1K-Bit TTL Bipolar PROM (256 x 4) 1K-Bit TTL Bipolar PROM (256 x 4) 1K-Bit TTL Bipolar PROM (256 x 4) 1K-Bit TTL Bipolar PROM (256 x 4 , 82HS321B 82HS321B 82HS641A 82HS641A 82HS641B 82HS641B 83C451 83C451 83C552 83C552 83C751 83C751 87C51 87C51 87C451 87C451 87C552 87C552 87C751 87C751 87C752 87C752 2K-Bit TTL Bipolar PROM ... OCR Scan
datasheet

6 pages,
273.74 Kb

54F04 54F374 signetics 68172 82s137a 82S191 82HS641 PLHS18 plhs18p8 S4LS04 bipolar PROM TEXT
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Abstract: 82S181 82S181 82S181A 82S181A 82S185/82S185A/82S185B 82S185/82S185A/82S185B 82S191/82S191A 82S191/82S191A 82HS321A 82HS321A 82HS641A/B 82HS641A/B 256-bit TTL bipolar PROM (32 x 8 ) . 4K-bit TTL bipolar PROM (512 x 8) . 1K-bit TTL bipolar PROM (256x 4 ) . 1K-bit TTL bipolar PROM (256 x 4 ) . 2K-bit TTL bipolar PROM (512 x 4 ) . 2K-bit TTL bipolar PROM (512 x 4 ) . 4K-bit TTL bipolar PROM (1 0 2 4 ... OCR Scan
datasheet

4 pages,
137.85 Kb

82HS641A 54F163 1OF16 bipolar prom 82hS641 TEXT
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Abstract: Value -.3 to 7 5.5 -20 -65 to +175 +175 Unit V V mA °C °C Bipolar PROM Output or Supply Voltage - Vcc HARRIS INTEGRATED CIRCUITS BIPOLAR PROM 7600 Series The 7600 Series of Bipolar PROMs is manufactured using the Bipolar Junction Isolation process with reliability proven nickel chromium fusible links , "3-State" Outputs "3-State" Outputs Active Pull-up Outputs Generic PROM High Speed Generic PROM Generic PROM High Speed Generic PROM Generic PROM High Speed Generic PROM Generic PROM High Speed Generic PROM Very ... OCR Scan
datasheet

3 pages,
229.79 Kb

PROM 7611 7641 prom 7610A -7649A LA 7610A TEXT
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Abstract: bipolar equiv alents or beyond with reduced power levels of CMOS tech nology. They are capable of 2001 , Differential Memory Cell The 4K, 8K, and 16K PROM (except "A" version) use an N-Well CMOS technology along , transistor cell is 0.43 square mils and the die size is 19,321 square mils for the 2K by 8 PROM (Figure 1). , series devices use the 1.2 micron PROM I technology. The 16K "A" series devices and the future 256K PROMs use the 0.8 micron PROM II tech nology with a single ended ijiemory cell. The process pro vides basic ... OCR Scan
datasheet

3 pages,
172.46 Kb

sense amplifier bitline memory device cypress eproms Bipolar PROM programming CMOS differential amplifier cascode Cypress introduction to CMOS PROMs BIPOLAR PROM PROGRAMMING SPECIFICATION TEXT
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Abstract: Bipolar Generic PROM Series a Advanced Micro Devices R E L IA B IL IT Y R E P O R T R E L IA , Date M ay 1966 5-235 Bipolar Generic PROM Series ADVANCED MICRO DEVICES BIPOLAR PROMS This , -II TECHNOLOGY 5-236 Bipolar Generic PROM Series Figure 1 is a cross section of an IMOX II transistor. A , . This process will be used on most new and advanced bipolar PROM products. It will provide performance , Advanced Micro Devices' bipolar PROM designs have the general configuration shown in Figure 4. Although the ... OCR Scan
datasheet

19 pages,
700.8 Kb

tv schematic diagram company SHARP MPP80S kontron mpp Bipolar PROM programming Am27S180 Kontron MPP80S AM27S20 TEXT
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Abstract: Access Time Pins Package 512 x 8 Bi-Polar PROM 25/50 ns 16 J JBP 512 x 8 Bi-Polar PROM 45/75 ns 20 J PROM JBP 256 x 8 Bi-Polar PROM 55/110 ns 20 J PROM JBP 32 x 8 Bi-Polar PROM 35/70 ns 20 J Texas Instruments , Texas Instruments Incorporated L 8 -10 M J B Product Nomenclature BIPOLAR MEMORIES ­ PROM Example: JBP 18 S 03 0 Prefix M J Package Type J = Ceramic DIP JBP = ... Texas Instruments
Original
datasheet

6 pages,
50.04 Kb

TIBPAL16XX-12M 20R8-7M TI L293 NE TI Cross Reference Search PAL16R4A "cross reference" 28L42 fuse smd code fk Pal programming 9616a 28L22 tibpal programming 18S030 28S42 pAL programming Guide TEXT
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Abstract: PROM speeds while consuming only 25% of the power required by its Bipolar counterparts. A further advantage of the WS57C51C WS57C51C over Bipolar PROM devices is the fact that it utilizes a proven EPROM technology , alternative to those designs which are comm itted to a Bipolar PROM footprint. It is a direct drop-in replacement for a Bipolar PROM of the same architecture (16K x 8). No software, hardware or layout changes , WS57C51C WS57C51C MILITARY HIGH SPEED 16Kx 8 CMOS PROM/RPROM KEY FEATURES • Ultra-Fast Access Time ... OCR Scan
datasheet

2 pages,
39.26 Kb

WS57C51C TEXT
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Abstract: HARRIS INTEGRATED CIRCUITS BIPOLAR PROM 7600 Series The 7600 Series of Bipolar PROMs is manufactured using the Bipolar Junction Isolation process with reliability proven nickel chromium fusible links , Bipolar PROM PACKAGING AVAILABLE (See page 88): E-16-LEAD E-16-LEAD DUAL INLINE R -20-LEAD -20-LEAD DUAL INLINE J -24-LEAD -24-LEAD , Pull-up Outputs Generic PROM High Speed Generic PROM Generic PROM High Speed Generic PROM Generic PROM High Speed Generic PROM Generic PROM High Speed Generic PROM Very High Speed Generic PROM Generic PROM ... OCR Scan
datasheet

4 pages,
375.13 Kb

7621 prom 4096X4 -7649A 1024X4 7641 prom mi 7641 7611 prom TEXT
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Abstract: Bipolar PROM speeds while consuming only 25% of the power required by its Bipolar counterparts. A further advantage of the WS57C51C WS57C51C over Bipolar PROM devices is the fact that it utilizes a proven EPROM technology , alternative to those designs which are committed to a Bipolar PROM footprint. It is a direct drop-in replacement for a Bipolar PROM of the same architecture (16K x 8). No software, hardware or layout changes , WS57C51C WS57C51C MILITARY HIGH SPEED 16K x 8 CMOS PROM/RPROM KEY FEATURES • Ultra-Fast Access Time ... STMicroelectronics
Original
datasheet

2 pages,
18.56 Kb

WS57C51C TEXT
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Abstract: is manufactured in an advanced CMOS technology which enables it to operate at Bipolar PROM speeds while consuming only 25% of the power required by its Bipolar counterparts. A further advantage of the WS57C51C WS57C51C over Bipolar PROM devices is the fact that it utilizes a proven EPROM technology. This enables the , which are comm itted to a Bipolar PROM footprint. It is a direct drop-in replacement for a Bipolar PROM , WS57C51C WS57C51C MILITARY HIGH SPEED 16K x 8 CMOS PROM/RPROM KEY FEATURES · Ultra-Fast Access Time - ... OCR Scan
datasheet

2 pages,
56.3 Kb

Bipolar PROM programming WS57C51C TEXT
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Archived Files

Abstract Saved from Date Saved File Size Type Download
No abstract text available
/download/0000000-1010130ZC/eprom-parallel-sync.xls
Memory 21/03/1997 191.5 Kb XLS eprom-parallel-sync.xls
Invented the bipolar PROM, the basis for today's programmable logic Invented CMOS, the Technologies Power BiMOS (bipolar/metal oxide semiconductors) High frequency bipolar/power MOS High voltage bipolar/power MOS BiCMOS (analog/digital) CMOS Complementary bipolar dielectric bipolar transistor Invented the MOS-controlled thyristor Produced first IC to
/datasheets/files/harris/team/hssview.htm
Harris 15/08/1997 12.18 Kb HTM hssview.htm
IGBT (insulated-gate bipolar transistor Invented the MOS-controlled thyristor Intelligent break the 1 MHz barrier, implemented in IBM computers. Digital ICs Invented the bipolar PROM, the basis for today's programmable logic Invented CMOS, the basis for all of today's VLSI manufacturing operations. Major Process Technologies Power BiMOS (bipolar/metal oxide semiconductors) High frequency bipolar/power MOS High voltage bipolar/power MOS BiCMOS (analog/digital) CMOS
/datasheets/files/harris/overview.htm
Harris 15/08/1997 10.54 Kb HTM overview.htm
Invented the bipolar PROM, the basis for today's programmable logic Invented CMOS, the (bipolar/metal oxide semiconductors) High frequency bipolar/power MOS High voltage bipolar/power MOS BiCMOS (analog/digital) CMOS Complementary bipolar dielectric isolation (bonded wafer bipolar transistor Invented the MOS-controlled thyristor Produced first IC to
/datasheets/files/harris/hss/hssview.htm
Harris 15/08/1997 12.95 Kb HTM hssview.htm
No abstract text available
/download/0000000-910130ZC/eprom-parallel-async.xls
Memory 21/03/1997 7129 Kb XLS eprom-parallel-async.xls
BIPOLAR PROM NMOS DSP 16 MEG DRAM FIXED PT DSP CMOS PLD 64K SRAM BIPOLAR MPU BIPOLAR LINEAR 1 MEG DRAM ABT (128K-512K 128K-512K) HCMOS 2 UM ASIC
/datasheets/files/texas-instruments/sc/docs/military/product/obsolete/obsolete.txt
Texas Instruments 07/11/1996 87.44 Kb TXT obsolete.txt