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Part Manufacturer Description PDF & SAMPLES
EL5164IWZ Intersil Corporation IC,OP-AMP,SINGLE,BIPOLAR,TSOP,6PIN,PLASTIC
ISL55014IEZ-T7 Intersil Corporation MMIC Silicon Bipolar Broadband Amplifier; SC706; Temp Range: -40° to 85°C
EL5101IW Intersil Corporation IC,OP-AMP,SINGLE,BIPOLAR,TSOP,5PIN,PLASTIC
EL5105IWZ Intersil Corporation IC,OP-AMP,SINGLE,BIPOLAR,TSOP,5PIN,PLASTIC
ISL32374EFBZ-T Intersil Corporation IC,LINE DRIVER,4 DRIVER,BICMOS,SOP,16PIN,PLASTIC
ISYE-1009RH-QS9000 Intersil Corporation IC,VOLT REFERENCE,FIXED,2.5V,BIPOLAR, RAD HARD,LLCC,3PIN,CERAMIC

"Bipolar Integrated Technology"

Catalog Datasheet MFG & Type PDF Document Tags
Abstract: types of integrated circuits produced. Summary of CMOS and Bipolar Technology Advantages for the , Technology in LVDS Integrated Circuits SLLA065 A = Emitter area of bipolar in um2 Vbe = Base-emitter , differential signaling (LVDS) interface integrated circuits. LinBiCMOS is shown to be a superior technology , glitch-free power-up enable circuits because of the bipolar's characteristics. Pure CMOS technology , advantages of CMOS, with bipolar technology being the differentiating factor between CMOS and LinBiCMOS Texas Instruments
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CMOS Linear Integrated Circuit SN65LVDS050 SN65LVDS31 SN65LVDS32
Abstract: integrated circuits produced. Summary of CMOS and Bipolar Technology Advantages for the Performance of , Technology in LVDS Integrated Circuits SLLA065 A = Emitter area of bipolar in um2 Vbe = Base-emitter , differential signaling (LVDS) interface integrated circuits. LinBiCMOS is shown to be a superior technology , glitch-free power-up enable circuits because of the bipolar's characteristics. Pure CMOS technology , advantages of CMOS, with bipolar technology being the differentiating factor between CMOS and LinBiCMOS Texas Instruments
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transistor bc 567 Bipolar Integrated Technology cmos integrated circuits transistor bc 564
Abstract: to the wafer prior to mask alignment. â  CMOS-type bipolar technology and buried Zeners , /down isolation technology â  Latch-up-proof process â  Complementary bipolar â , Integrated Foundryand MEMS Integrated Circuits Circuits Services for Technology and Devices Roadmap 1 2 , Foundry Services for Integrated Circuits and MEMS Micrel Inc., is a leading global manufacturer , offices and advanced technology design centers situated throughout the Americas, Europe, and Asia. In Micrel Semiconductor
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M4007-052013
Abstract: . This technology, combining an emitter switching BIPOLAR - MOSFET power stage and a BCD control part, offers the high current carrying capacity and the relatively low cost of a high voltage bipolar , DEVICE The high voltage power device allowed by the technology is bipolar, however, thanks to the , DISCRETE AND STANDARD ICs GROUP VIPOWER M3 A NEW SMART POWER TECHNOLOGY FOR HIGH VOLTAGE, HIGH , be integrated ranging from the very low resistivity (10 m/sq) of the metal resistance used to STMicroelectronics
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mosfet 1500v for smps VIPower DMOSFET mosfet 1500v bipolar transistor 1500v mosfet schematic dc motor driver 10-15A
Abstract: . BCD TECHNOLOGY A power IC technology combining bipolar, CMOS and power DMOS was first introduced by , junction-isolated bipolar IC process with vertical DMOS technology. The result is a process requiring 12 masks in , possibility of choosing the optimal technology for each circuit function: bipolar is the first choice for , introduction of the shrunk BCD-II technology both increases the amount of logic that can be integrated at a , power DMOS transistors -an interesting advantage over bipolar technology where current density depends STMicroelectronics
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L4970 L296 L6202 L6203 L6280 SGS L6203 AN447/0291
Abstract: BCD TECHNOLOGY A power IC technology combining bipolar, CMOS and power DMOS was first introduced by , junction-isolated bipolar IC process with vertical DMOS technology. The result is a process requiring 12 masks in , possibility of choosing the optimal technology for each circuit function: bipolar is the first choice for , technology both increases the amount of logic that can be integrated at a reasonable cost. This improvement , interesting advantage over bipolar technology where current density depends on emitter area and cannot be STMicroelectronics
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AN447 ST L6203 application note typewriter Multiwatt st
Abstract: technology is virtually immune to parasitic bipolar turn-on, and it has been demonstrated that the avalanche , Extremely Rugged MOSFET Technology with Ultra-low RDS(on) Specified for A Broad Range of EAR , Rectifier, 233 Kansas Street, El Segundo, CA 90245. USA ABSTRACT An extremely rugged technology has been , RDS(on). A product and the inherent ruggedness of the technology, qualified to the Q101 quality , at the 42V integrated starter-alternator design and the impact of it's architecture on the International Rectifier
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3 phase motor soft starter diagram Avalanche diodes Avalanche Rugged Technology IRFP2907 inverter 6-12kW Integrated Starter Alternator 42/14V AN-1005
Abstract: Bipolar Transistor Bridge Driver Buffer (Analog) Connector Magnetic Core Current Regulator Diode Quartz , Bipolar Transistor Instrument Amplifier Isolation Amplifier Junction Field-Effect Transistor Level , Diode Pressure Sensor Power Bipolar Transistor Power Driver (Analog) Power MOSFET Radio System Rectifier Relay Driver RF Bipolar Transistor RF Mosfet Schottky Diode Sense Amplifier Sample-and-Hold Amplifier , Model Bipolar Transistor Bipolar Transistor Bipolar Transistor Bipolar Transistor Bipolar Transistor -
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Q2N4401 Q2N2907A Q2SC1815 D1N750 Q2N1132 q2n2907a- RD91EB
Abstract: input impedance operational amplifier or use discrete MOS transistors in a linear circuit, but bipolar technology ruled the linear integrated circuit world. CMOS technology has changed this. The incredible , the three-dimensional bipolar parameters are more difficult to control, CMOS technology leads to a , makes integration of analog and digital devices simple. Bipolar junction transistor technology needs to , Silicon Gate CMOS Linear Technology Introduction Historically, MOS technology has been the Advanced Linear Devices
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power bjt advantages and disadvantages advantages and disadvantages of cmos BJT Gate Drive circuit bjt advantages and disadvantages amplifier advantages and disadvantages advantages of a bjt amplifier
Abstract: being developed in both high-frequency bipolar transistor IC technology and silicon CMOS IC technology , the IC technology, while industrial researchers used RFIC-specific bipolar/BiCMOS process technology , . Improvements in RFIC VCO technology make these integrated sources ever more attractive for an increasing , NOTE 1768 Tracking Advances in VCO Technology Abstract: This application note tracks the history of , . It traces the technology, and discusses evolution of product performance and size. Future trends are Maxim Integrated Products
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abstract of hartley oscillator hartley oscillator MAX2837 modern and radar transmitters Wimax DBS 3900 Atheros Communications MAX2622 MAX2624 MAX2750 MAX2754 MAX2820 MAX2900
Abstract: being developed in both high-frequency bipolar transistor IC technology and silicon CMOS IC technology , the IC technology, while industrial researchers used RFIC-specific bipolar/BiCMOS process technology , . Improvements in RFIC VCO technology make these integrated sources ever more attractive for an increasing , NOTE 1768 Tracking Advances in VCO Technology Abstract: This application note tracks the history of , . It traces the technology, and discusses evolution of product performance and size. Future trends are Maxim Integrated Products
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Mobile WiMAX abstract max2839 varactor diode for Colpitts oscillator TRANSISTOR 50GHZ history of varactor diode atheros 802.11a AN1768 APP1768
Abstract: offers integrated RF power modules for base stations in bipolar and LDMOS technology ­ key parts in our , offers integrated RF power modules for base stations in bipolar and LDMOS technology ­ key parts in our , diodes. Highly-efficient LDMOS power transistors, integrated modules and MMICs for all cellular , technology and new subscribers mean greater challenges for the base station manufacturer. To help you meet , , RF LDMOS power amplifiers, integrated modules and MMICs, synthesizers, and high-speed I/O and Philips Semiconductors
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motherboard repair Chip level CMOS090 CMOS065 baseband GSM BTS 3G CHIP GENERATION TELECOM qubic4
Abstract: Dielectric Isolation ® Application Note In an integrated circuit, the individual , done by using reverse biased PN junctions and the technology is referred to as junction isolation , collectorsubstrate capacitance. An ideal isolation technology would not have leakage and capacitive coupling between devices. Elantec uses a Dielectric Isolation (D.I.) bipolar process which differs radically from conventional bipolar J.I. processes in that the individual transistors are electrically isolated from their Intersil
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pnp transistor 2000v vertical PNP AN1107 GHz PNP transistor NPN Two monolithic transistors 1-888-INTERSIL
Abstract: Gallium Arsenide (GaAs) IC technology and monolithic microwave integrated circuits (MMICs). The , being developed in both highfrequency bipolar transistor IC technology and silicon CMOS IC technology , the IC technology, while industrial researchers used RFIC-specific bipolar/BiCMOS process technology , . 12. B. Jansen. K. Negus and D. Lee, Silicon Bipolar VCO Family For 1.1-2.2GHz With Fully Integrated , Tracking Advances In VCO Technology Tracks the history of voltage-controlled oscillators (VCOs) since Maxim Integrated Products
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1GHz vco AR5111 max2115 jfet discrete differential transistor hartley oscillator circuit hartley oscillator bipolar 600KH MAX2753
Abstract: Layout Technology Bipolar Supply Voltaaes +8.2V ± 5% +4.3V ± 5% Packaaa 16 Pin Ceramic Monolithic PCM Repeater XR-C262 XR-C262Z (Improved ALBO) Monolithic PCM Repeater Bipolar +6.8V ± , Detection Threshold Dual High Current Line Drivers Loss of Signal Alarm Technology Bipolar Supply , Integrated pulse shaping circuit for line length s e le c t. Build-in B3ZS/HDB3 encoder and decoder Bipolar , +5V±5% Plastic, SOIC XR-T7296 DS3/SONET STS-1 Integrated Line Bipolar +5V±5% Plastic -
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XR-T65119 codina XRT65119 pcm transcoder ami RECEIVER BANDPASS FILTER PIN xr-t5675 XR-C240 XR-C277 XR-TM044H XR-T5600 T5620 XR-T34119
Abstract: one-tenth of those in J I D I is an isolation technique and as such is a process technology platform which , resistors CMOS or even combined CMOS and bipolar (BiCMOS) can be implemented on D I In all cases the D I , Dielectric Isolation (D I ) bipolar process which differs radically from conventional bipolar J I processes , Elantec's patented D I technology has been improved substantially from the original process Performance , Dielectric Isolation (D I ) is a way of building monolithic integrated circuits which have performance that Elantec
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L2000
Abstract: This paper describes "Process HJ" a new high speed, low power complementary bipolar technology , Materials Technology Ltd. REFERENCES [1] J. Warnock et. al. "High performance complementary bipolar , complementary bipolar technology for low cost and high performance mixed analog/digital applications", Proc , bipolar technology," Proc. IEEE 1993 IEDM, pp63-65, Washington. [4] P C Hunt and M P Cooke, "Process HE: A highly advanced trench isolated bipolar technology for analogue and digital applications," Proc Mitel Semiconductor
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TRANSISTOR 30GHZ Marconi Optical Components 30GHz transistor Bipolar HJ GEC Marconi Materials Technology
Abstract: A New High Performance Complementary Bipolar Technology Featuring 45GHz NPN and 20GHz PNP Devices , A new high performance silicon complementary bipolar technology is introduced. In addition a novel , required. Keywords: Silicon, RF, Bipolar technology, Complementary, Local oxidation 1. INTRODUCTION To , complementary bipolar process technology. We have adopted the complementary approach as it enables more , silicon complementary bipolar technology, Process HJ, is fully isolated, is wholly silicon and includes a -
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p331 TRANSISTOR transistor 5ghz pnp TRANSISTOR PNP 5GHz Transistor P331 high gain PNP RF TRANSISTOR Schematics 5250 1E-06 1E-05 1E-04 1E-03 1E-02
Abstract: BIPOLAR INTEGRATED 47E ]> â  14514S4 0000702 4 â  BIT7^5-3 Bipolar Integrated Technology Inc. B2028 16-Way Asynchronous Arbiter Introduction: Fast resource sharing requires fast arbitration of , . All inputs and outputs are TTL levels. Figure 1 - 16-Way Asynchronous Arbiter Bipolar [ Integrated l\ Technology, Inc. BIPOLAR INTEGRATED 47E D â  1451454 0000703 b â  BIT T'SA-33- 16-Way Asynchronous , . Bipolar Integrated Technology, Inc. 1050 N.W. COMPTON DRIVE Beaverton, OR 97006 (503) 629-5490 BIT does -
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MKTG-B016
Abstract: , PLL, and super PLL. Series Frame Technology MB54600 III F3 Bipolar MB54700 III , up to 28 GHz fT in a highly integrated single-chip solution. Our advanced technology allows you to , world leader in UHF bandpass SAW filter technology, introduces a master-slice, semi-custom LSI capability, ideal for integrating IF/RF front-end circuits. This "frame" based technology, a collection of , standard RF technologies to a highly integrated monolithic solution. Allowing you to create semi-custom Fujitsu
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MB1560 FUJITSU saw filter MB547 Prescalers MB1570
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