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ISL73096RHVX Intersil Corporation RF POWER TRANSISTOR
ISL73127RHVF Intersil Corporation RF POWER TRANSISTOR
ISL73128RHVF Intersil Corporation RF POWER TRANSISTOR
ISL73096RHVF Intersil Corporation RF POWER TRANSISTOR
PMP6710 Texas Instruments 85VAC-265VAC Input, 12V/1A Output, Green-mode Flyback With BJT
PMP6788 Texas Instruments 85VAC-265VAC Input, 15V/1A Output, Green-mode Flyback With BJT

"BJT Transistors"

Catalog Datasheet MFG & Type PDF Document Tags
Abstract: Fall 1998/Winter 1999 Bipolar Transistors in Space bipolar chip types that are MIL , the beginning of space a second look at BJT' may be in order. the 150 watt JANSR2N7270 N-channel, s exploration, bipolar junction transistors which has VDSS = 100V and an Understandably, the circuit designer (BJT) have been reliably used in power RDS(on) of .065 ohms at 34A.and the would have to fit a , Number Polarity N-Channel NPN BJT. When these power supplies are pull circuits than large when Microsemi
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2N6338 2N6437 2N7272 JANS2N7372 JANS2N7373 power BJT pnp NPN Power BJT 100v JANS2N5154 JANS2N5153 power transistor bjt 100 a 1998/W PP6338M PP6437M IRHM9150
Abstract: models that were established in the lecture part of the course. Components Needed: 2N4400 BJT , semiconductor parameter analyzer to the characterization of MOS transistors and BJTs. Part 1. Measurement of BJT Parameters The parameters IS , β, and VAF are key parameters that are used to chararize the , BJT that relate the dependent variables IB and IC to the independent port voltages VBE and VCE given , show them to your TA. Part 2. Measurement of the Output Characteristics of Transistors The output -
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Q4015L5 Q4010LS2
Abstract: domain of the digital designer. Analog designers might use MOS transistors for the input stage of a high input impedance operational amplifier or use discrete MOS transistors in a linear circuit, but bipolar , design is accomplished with bipolar junction transistors, an examination of CMOS and Bipolar Junction Technology (BJT) and the merits of each will best explain the advantages of each technology. Then, a comparison of metal and silicon gate CMOS technology will further identify silicon gate CMOS transistors Advanced Linear Devices
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power bjt advantages and disadvantages advantages and disadvantages of cmos BJT Gate Drive circuit bjt advantages and disadvantages amplifier advantages and disadvantages advantages of a bjt amplifier
Abstract: 2N6179 Si NPN Power BJT 16.25 Transistors Transistors Bipolar Si NPN Power Transist. Page 1 of 2 Enter Your Part # Home Online Store Diodes Transistors Integrated Circuits Optoelectronics Thyristors Part Number: 2N6179 2N6179 Si NPN Power BJT Enter code INTER3 at checkout.* CUSTOMER TESTIMONIALS 1) AMS had the parts that were very difficult to find! 2) Their price was very reasonable (unlike , ://store.americanmicrosemiconductor.com/2n6179.html 4/12/2010 2N6179 Si NPN Power BJT 16.25 Transistors Transistors Bipolar Si NPN American Microsemiconductor
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power BJT TRANSISTORS BJT list
Abstract: 2N703 Si NPN Lo-Pwr BJT 17.50 Transistors Transistors Bipolar Si NPN Low-Power Bi. Page 1 of 2 Enter Your Part # Home Online Store Diodes Transistors Integrated Circuits Optoelectronics Thyristors Part Number: 2N703 2N703 Si NPN Lo-Pwr BJT Enter code INTER3 at checkout.* CUSTOMER , 4/12/2010 2N703 Si NPN Lo-Pwr BJT 17.50 Transistors Transistors Bipolar Si NPN Low-Power Bi. Page 2 of 2 HOME | CATALOG | | CONTACT US American Microsemiconductor
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Abstract: 2N6181 Si PNP Power BJT 2.50 Transistors Bipolar Silicon PNP Power Transistors Ame. Page 1 of 2 Enter Your Part # Home Online Store Diodes Transistors Integrated Circuits Optoelectronics Thyristors Part Number: 2N6181 2N6181 Si PNP Power BJT Enter code INTER3 at checkout.* CUSTOMER , ://store.americanmicrosemiconductor.com/2n6181.html 4/12/2010 2N6181 Si PNP Power BJT 2.50 Transistors Bipolar Silicon PNP Power , Transistors Page. Order Help Desk U.S Orders Your Americanmicrosemi.com Order Secure Order Processing U.S American Microsemiconductor
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Abstract: BJT Primary Switch Ratings In RDFC Applications Application Note AN-2337 When the transistor is , (BJT) as the primary power switch. It is important to understand certain key characteristics and behaviours of the high voltage BJT to ensure that a suitable type is selected and your RDFC application design is well centred. This application note addresses some important BJT characteristics, and how types of transistors can be assessed for use in an RDFC application. The key characteristics are NXP Semiconductors
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C2472 C2473 APPCHP1 BJT characteristics BJT with V-I characteristics common emitter bjt Drive Base BJT Low Capacitance bjt C2470 DS-1423 AN-2497 AN-2337-0904
Abstract: 2N946 Si PNP Lo-Pwr BJT 6.60 Transistors Transistors Bipolar Si PNP Low-Power Bipo. Page 1 of 2 Enter Your Part # Home Online Store Diodes Transistors Integrated Circuits Optoelectronics Thyristors Part Number: 2N946 2N946 Si PNP Lo -Pwr BJT Enter code INTER3 at checkout.* CUSTOMER TESTIMONIALS 1) AMS had the parts that were very difficult to find! 2) Their price was very reasonable (unlike , ://store.americanmicrosemiconductor.com/2n946.html 4/12/2010 2N946 Si PNP Lo-Pwr BJT 6.60 Transistors Transistors Bipolar Si PNP American Microsemiconductor
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Abstract: 2N652A Ge PNP Lo-Pwr BJT 4.10 Transistors Bipolar Germanium PNP Low-Power Tra. Page 1 of 2 Enter Your Part # Home Online Store Diodes Transistors Integrated Circuits Optoelectronics Thyristors Part Number: 2N652A 2N652A Ge PNP Lo-Pwr BJT Enter code INTER3 at checkout.* CUSTOMER , ://store.americanmicrosemiconductor.com/2n652a.html 4/12/2010 2N652A Ge PNP Lo-Pwr BJT 4.10 Transistors Bipolar Germanium PNP , Germanium PNP Low-Power Transistors Page. Order Help Desk U.S Orders Your Americanmicrosemi.com Order American Microsemiconductor
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bjt specifications
Abstract: 2N297A Ge PNP Power BJT 10.00 Transistors Bipolar Germanium PNP. Home Online Store Diodes Transistors Integrated Circuits Optoelectronics Thyristors Part Number: 2N297A 2N297A G e PNP Po w er BJT Enter code INTER3 at checkout.* CUSTOMER , Transistors Page. Order Help Desk U.S Orders Your Americanmicrosemi.com Order Secure Order Processing U.S , | VIEW CART | SHIPPING | 1 of 2 4/12/2010 9:09 PM 2N297A Ge PNP Power BJT 10.00 American Microsemiconductor
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GERMANIUM PNP LOW POWER TRANSISTORS
Abstract: 2N651A Ge PNP Lo-Pwr BJT 9.00 Transistors Bipolar Germanium PNP Low-Power Tra. Page 1 of 2 Enter Your Part # Home Online Store Diodes Transistors Integrated Circuits Optoelectronics Thyristors Part Number: 2N651A 2N651A Ge PNP Lo-Pwr BJT Enter code INTER3 at checkout.* CUSTOMER , ://store.americanmicrosemiconductor.com/2n651a.html 4/12/2010 2N651A Ge PNP Lo-Pwr BJT 9.00 Transistors Bipolar Germanium PNP , Germanium PNP Low-Power Transistors Page. Order Help Desk U.S Orders Your Americanmicrosemi.com Order American Microsemiconductor
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Abstract: around for a long time. BJT transistors are made from a silicon bar that has three areas that are doped , is doped to have the opposite polarity. The BJT, like most transistors, come in two types called , Metal Oxide Semiconductor Field Effect Transistors The BJT and JFET have a diode in their input circuit , Transistors . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . , 7 8 9 BJT Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Texas Instruments
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SLOA026 BJT amplifiers Germanium Transistor transistor BJT Driver pnp germanium small signal bjt pnp germanium low power bjt
Abstract: electrical characteristics of SiC n-p-n bipolar junction transistors (BJTs) is investigated under long-term , same total electrical charge, if passed through the BJT as a pulsed current, instead of a dc current , junction transistor (BJT), electrical properties, long-term reliability, silicon carbide (SiC) devices. I. I NTRODUCTION S ILICON carbide (SiC) n-p-n bipolar junction transistors (BJTs) are , comprehensive evaluation of the stability of the BJT current gain β after long-term operation is presented GeneSiC Semiconductor
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Abstract: 2N1358 Ge PNP Power BJT 17.80 Transistors Transistors Bipolar Ge PNP Power Bipola. Page 1 of 2 Enter Your Part # Home Online Store Diodes Transistors Integrated Circuits Optoelectronics Thyristors Part Number: 2N1358 2N1358 Ge PNP Pow er BJT Enter code INTER3 at checkout.* CUSTOMER TESTIMONIALS 1) AMS had the parts that were very difficult to find! 2) Their price was very reasonable (unlike , 2N1358 Ge PNP Power BJT 17.80 Transistors Transistors Bipolar Ge PNP Power Bipola. Page 2 of 2 HOME American Microsemiconductor
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Abstract: 2N6275 Si NPN Power BJT 15.98 Transistors Unsorted Transistors Other American Micr. Page 1 of 2 Enter Your Part # Home Online Store Diodes Transistors Integrated Circuits Optoelectronics Thyristors Part Number: 2N6275 2N6275 Si NPN Power BJT Enter code INTER3 at checkout.* CUSTOMER TESTIMONIALS 1) AMS had the parts that were very difficult to find! 2) Their price was very reasonable (unlike , .html 4/12/2010 2N6275 Si NPN Power BJT 15.98 Transistors Unsorted Transistors Other American Micr American Microsemiconductor
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Abstract: 2N6308 Si NPN Power BJT 9.00 Transistors Transistors Bipolar Si NPN Power Transisto. Page 1 of 2 Enter Your Part # Home Online Store Diodes Transistors Integrated Circuits Optoelectronics Thyristors Part Number: 2N6308 2N6308 Si NPN Power BJT Enter code INTER3 at checkout.* CUSTOMER TESTIMONIALS 1) AMS had the parts that were very difficult to find! 2) Their price was very reasonable (unlike , ://store.americanmicrosemiconductor.com/2n6308.html 4/12/2010 2N6308 Si NPN Power BJT 9.00 Transistors Transistors Bipolar Si NPN American Microsemiconductor
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si 1125 h
Abstract: 2N2528 Ge PNP Power BJT 40.00 Transistors Transistors Bipolar Ge P. Home Online Store Diodes Transistors Integrated Circuits Optoelectronics Thyristors Part Number: 2N2528 2N2528 G e PNP Po w er BJT Enter code INTER3 at checkout.* CUSTOMER TESTIMONIALS 1) AMS had the parts that were very difficult to find! 2) Their price was very reasonable (unlike , 2N2528 Ge PNP Power BJT 40.00 Transistors Transistors Bipolar Ge P. http American Microsemiconductor
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Abstract: around for a long time. BJT transistors are made from a silicon bar that has three areas that are doped , is doped to have the opposite polarity. The BJT, like most transistors, comes in two types called , Field Effect Transistors The BJT and JFET have a diode in their input circuit which controls their mode , . . . . . . . Metal Oxide Semiconductor Field Effect Transistors . . . . . . . . . . . . . . . . . , . . . . 2 2 3 4 6 7 8 8 9 List of Figures 1 2 3 4 5 6 7 8 9 BJT Texas Instruments
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bjt differential amplifier pnp germanium bjt input output bjt npn transistor jfet discrete differential transistor jfet differential transistor BIPOLAR Junction TRANSISTOR SLOA026A
Abstract: 2N741A Ge PNP Lo-Pwr BJT 4.50 Transistors Transistors Bipolar Ge PNP Low-Power . Page 1 of 2 Enter Your Part # Home Online Store Diodes Transistors Integrated Circuits Optoelectronics Thyristors Part Number: 2N741A 2N741A Ge PNP Lo-Pwr BJT Enter code INTER3 at checkout.* CUSTOMER TESTIMONIALS 1) AMS had the parts that were very difficult to find! 2) Their price was very reasonable (unlike , 2N741A Ge PNP Lo-Pwr BJT 4.50 Transistors Transistors Bipolar Ge PNP Low-Power . Page 2 of 2 HOME American Microsemiconductor
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20 A BJT
Abstract: 2N2567 Ge PNP Power BJT 6.88 Transistors Bipolar Germanium PNP . Home Online Store Diodes Transistors Integrated Circuits Optoelectronics Thyristors Part Number: 2N2567 2N2567 G e PNP Po w er BJT Enter code INTER3 at checkout.* CUSTOMER , Transistors Page. Order Help Desk U.S Orders Your Americanmicrosemi.com Order Secure Order Processing U.S , | VIEW CART | SHIPPING | 1 of 2 4/12/2010 9:02 PM 2N2567 Ge PNP Power BJT 6.88 American Microsemiconductor
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