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Part Manufacturer Description PDF & SAMPLES
ISL99135BDRZ-T Intersil Corporation 35A DrMOS Module with Diode Emulation and PS4; 16; Temp Range: 0° to 70°
ISL99125BDRZ-T Intersil Corporation 25A DrMOS Module with Diode Emulation and PS4; 16; Temp Range: 0° to 70°
ISL97631IHTZ Intersil Corporation IC,LASER DIODE/LED DRIVER,TSOP,6PIN,PLASTIC
ISL99140IRZ-T Intersil Corporation 40A DrMOS Power Module with Integrated Diode Emulation and Thermal Warning Output; BiasVoltage::4.75 to 5.25; Temp Range: -40° to 85°C
ISL9104AIRUFEVAL1Z Intersil Corporation ISL9104AIRUF EVALUATION BOARD 1 - ROHS COMPLIANT - 6 LD
ISL9104IRUFEVAL1Z Intersil Corporation ISL9104IRUF EVALUATION BOARD 1 - ROHS COMPLIANT - 6 LD

"B14 DIODE"

Catalog Datasheet MFG & Type PDF Document Tags
Abstract: Ambient RÓ¨JA 50 1/8 Unit o C/W Version: B14 TSM6N60 600V N-Channel Power MOSFET , Delay Time VDD = 300V, RGEN =25Ω Turn-Off Fall Time ns Source-Drain Diode Ratings and Characteristic Source Current Diode Forward Voltage IS = 6.0A, VGS = 0V Note: Pulse Width < 300Âus, Duty Cycle < 2%. 2/8 Version: B14 TSM6N60 600V N-Channel Power MOSFET Electrical Characteristics , Capacitance Gate Charge On-Resistance vs. Junction Temperature Source-Drain Diode Forward Voltage Taiwan Semiconductor
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TSM6N60CH TSM6N60CP
Abstract: forward rectified current per diode Peak forward surge current, 8.3 ms single half sine-wave superimposed on rated load per diode UNIT V 30 IF(AV) A 15 A 10000 V/μs VAC , 7.5A Instantaneous forward voltage per diode ( Note1 ) IF = 7.5A TJ = 25°C TJ = 125°C VF VF IF = 15A Instantaneous reverse current per diode at rated reverse voltage TJ = 25°C TJ = 125°C IR Typical thermal resistance per diode RθJC Operating junction temperature Taiwan Semiconductor
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TSF30U100C TSF30U120C 2011/65/EU 2002/96/EC ITO-220AB JESD22-B102
Abstract: rectified current per diode Peak forward surge current, 8.3 ms single half sine-wave superimposed on rated load per diode TST30H200CW UNIT VRRM Maximum repetitive peak reverse voltage , 1500 V Typ. IF = 15A Instantaneous forward voltage per diode ( Note1 ) IF = 30A IF = 15A IF = 30A Instantaneous reverse current per diode at rated reverse voltage TJ = 25°C VF , diode RθJC 3 Operating junction temperature range TJ - 55 to +150 O C TSTG - Taiwan Semiconductor
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TST30H150CW D1408068
Abstract: Temperature Source-Drain Diode Forward Voltage 3/6 Version: B14 TSM7N65A 650V N-Channel Power , Ambient 1/6 Unit 3.1 o 65 o C/W C/W Version: B14 TSM7N65A 650V N-Channel , © Turn-Off Fall Time ns Source-Drain Diode Ratings and Characteristic Source Current Integral reverse diode in IS - - 7 A Source Current (Pulse) the MOSFET ISM - - 28 A Diode Forward Voltage IS = 3A, VGS = 0V VSD - - 1.5 V Note: 1 Taiwan Semiconductor
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ITO-220 TSM7N65ACI
Abstract: Drain-Source On-Resistance Source-Drain Diode Forward Voltage 3/6 Version: B14 TSM15N03PQ33 30V , t ≤ 10sec RӨJA 1/6 Unit 8 o 39 o C/W C/W Version: B14 TSM15N03PQ33 , Time ns Drain-Source Diode Characteristics and Maximum Rating Drain-Source Diode Forward , : B14 TSM15N03PQ33 30V N-Channel Power MOSFET Electrical Characteristics Curves Output , Version: B14 TSM15N03PQ33 30V N-Channel Power MOSFET PDFN33 Mechanical Drawing Unit: Millimeters Taiwan Semiconductor
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Abstract: and Storage Temperature Range TJ, TSTG 1/9 - 55 to +150 W mJ A o C Version: B14 , ID = 8A, VGS = 10V, Turn-Off Fall Time Source-Drain Diode ns (Note 4) Forward On Voltage , : B14 TSM70N600 700V, 8A, 0.6â"¦ N-Channel Power MOSFET Electrical Characteristics Curves , Voltage vs. Gate Charge On-Resistance vs. Junction Temperature Source-Drain Diode Forward Current vs. Voltage 3/9 Version: B14 TSM70N600 700V, 8A, 0.6â"¦ N-Channel Power MOSFET Electrical Taiwan Semiconductor
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TSM70N600CI TSM70N600CH TSM70N600CP
Abstract: SYMBOL per device Maximum average forward rectified current per diode Peak forward surge current, 8.3 ms single half sine-wave superimposed on rated load per diode UNIT VRRM Maximum , (rated VR) IFSM 1500 V Min. Maximum instantaneous forward voltage per diode ( Note1 , μA - 50 100 mA Maximum instantaneous reverse current per diode at rated reverse voltage TJ = 25°C TJ = 125°C Typical thermal resistance per diode Operating temperature range Taiwan Semiconductor
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TSF30U45C D1401021
Abstract: diode TSF30U60C UNIT VRRM PARAMETER 60 V 30 IF(AV) A 15 Peak forward surge current, 8.3 ms single half sine-wave superimposed on rated load per diode IFSM 250 A , ) VBR 60 - - Maximum instantaneous forward voltage per diode (Note 2) IF = 15A TJ = , diode at rated reverse voltage TJ = 25°C TJ = 125°C IR V 0.57 0.53 V 0.55 - 500 μA - 60 mA O Typical thermal resistance per diode RθjC 3 Operating Taiwan Semiconductor
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D1401022
Abstract: average forward rectified current per diode Peak forward surge current, 8.3 ms single half sine-wave superimposed on rated load per diode UNIT VRRM Maximum repetitive peak reverse voltage , MIN IF = 5A Instantaneous forward voltage per diode ( Note1 ) IF = 10A IF = 5A IF = 10A Instantaneous reverse current per diode at rated reverse voltage TJ = 25°C TJ = 125°C TJ = 25°C TJ = , diode RθJC 4 Operating junction temperature range TJ - 55 to +150 O C - 55 to Taiwan Semiconductor
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TSF20U100C D1408026
Abstract: ) PARAMETER SYMBOL per device Maximum average forward rectified current per diode Peak forward surge current, 8.3 ms single half sine-wave superimposed on rated load per diode UNIT VRRM , ) Maximum instantaneous forward voltage per diode (Note1) IF = 5A IF = 10A IF = 5A Maximum instantaneous reverse current per diode at rated reverse voltage Tj = 25°C Tj = 25°C Tj = 125°C IR , diode RθjC 4 Operating junction temperature range TJ - 55 to +150 O C TSTG - Taiwan Semiconductor
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TSF10U60C D1401023
Abstract: reverse voltage per device Maximum average forward rectified current per diode Peak forward surge current, 8.3 ms single half sine-wave superimposed on rated load per diode TSF10M45C UNIT , 1500 V MIN IF = 2.5A Instantaneous forward voltage per diode ( Note1 ) IF = 5A IF = 2.5A IF = 5A Instantaneous reverse current per diode at rated reverse voltage TJ = 125°C TJ = 25 , resistance per diode RθJC 3 Operating junction temperature range TJ - 55 to +150 O C Taiwan Semiconductor
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D1408066
Abstract: Pulsed Drain Current (Note 1) Continuous Source Current (Diode Conduction) o TSTG -55 to , Unit 55 o 100 o C/W C/W Version: B14 TSM2328 100V N-Channel MOSFET Electrical , Diode Forward Voltage IS = 1A, VGS = 0V VSD - 1.2 - V Qg - 11.1 - , 2/5 Version: B14 TSM2328 100V N-Channel MOSFET Electrical Characteristics Curve Typical Output Characteristic Gate Charge On-Resistance vs. Gate-Source Voltage Source-Drain Diode Taiwan Semiconductor
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TSM2328CX
Abstract: per diode Peak forward surge current, 8.3 ms single half sine-wave superimposed on rated load per diode UNIT VRRM Maximum repetitive peak reverse voltage TSF10U60C 60 V 10 IF(AV , of change (rated VR) Maximum instantaneous forward voltage per diode (Note1) IF = 5A IF = 10A IF = 5A Maximum instantaneous reverse current per diode at rated reverse voltage Tj = 25 , Typical thermal resistance per diode RθjC 4 Operating junction temperature range TJ - 55 Taiwan Semiconductor
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Abstract: SYMBOL per device Maximum average forward rectified current per diode Peak forward surge current, 8.3 ms single half sine-wave superimposed on rated load per diode UNIT VRRM Maximum , per diode ( Note1 ) Maximum instantaneous reverse current per diode at rated reverse voltage TJ = 25°C TJ = 125°C Typical thermal resistance per diode Operating temperature range Storage , : DS_D1401021 Version: B14 TSF30U45C Taiwan Semiconductor ORDERING INFORMATION PART NO. PACKING CODE Taiwan Semiconductor
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Abstract: and Storage Temperature Range TJ, TSTG 1/9 - 55 to +150 W mJ A o C Version: B14 , ID = 2.3A, VGS = 10V, Turn-Off Fall Time Source-Drain Diode ns (Note 4) Forward On , temperature. 2/9 Version: B14 TSM70N900 700V, 4.5A, 0.9â"¦ N-Channel Power MOSFET Electrical , Gate-Source Voltage vs. Gate Charge On-Resistance vs. Junction Temperature Source-Drain Diode Forward Current vs. Voltage 3/9 Version: B14 TSM70N900 700V, 4.5A, 0.9â"¦ N-Channel Power MOSFET Taiwan Semiconductor
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TSM70N900CI TSM70N900CH TSM70N900CP
Abstract: load per diode IFSM 280 A MIN Maximum instantaneous forward voltage per diode (Note 2) IF = 5A IF = 10A IF = 10A Maximum instantaneous reverse current per diode at rated reverse , - - 100 mA V 42 V O Typical thermal resistance per diode RθJC 6 , Pulse Width=300 μs, 1% Duty Cycle Document Number: DS_D1408043 Version: B14 TSP10U60S Taiwan , : DS_D1408043 90 100 100 0.1 1 10 100 REVERSE VOLTAGE (V) Version: B14 TSP10U60S Taiwan Semiconductor
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J-STD-020 10U60
Abstract: per diode Peak forward surge current, 8.3 ms single half sine-wave superimposed on rated load per diode 60 V 10 IF(AV) A 5 IF = 5A Maximum instantaneous reverse current per diode , (rated VR) Maximum instantaneous forward voltage per diode (Note1) UNIT VRRM Maximum , mA O Typical thermal resistance per diode RθjC 4 Operating junction temperature range , : B14 TSF10U60C Taiwan Semiconductor ORDERING INFORMATION PART NO. PACKING CODE GREEN COMPOUND Taiwan Semiconductor
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Abstract: forward rectified current per diode Peak forward surge current, 8.3 ms single half sine-wave superimposed on rated load per diode TSF30H120C UNIT VRRM PARAMETER 120 V 30 IF(AV , voltage ( IR =1.0mA, Ta =25°C ) IF = 5A IF = 7.5A Instantaneous forward voltage per diode ( Note1 , diode at rated reverse voltage TJ = 25°C TJ = 125°C IR V V μA mA O Typical thermal resistance per diode RθjC 4.5 Operating junction temperature range TJ - 55 to +150 Taiwan Semiconductor
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D1401025
Abstract: =25oC unless otherwise noted) PARAMETER SYMBOL per device per diode Peak forward surge current, 8.3 ms single half sine-wave superimposed on rated load per diode UNIT VRRM Maximum repetitive peak , forward voltage per diode ( Note1 ) Maximum instantaneous reverse current per diode at rated reverse voltage TJ = 25°C TJ = 125°C Typical thermal resistance per diode Operating temperature range , Document Number: DS_D1401021 Version: B14 TSF30U45C Taiwan Semiconductor ORDERING INFORMATION Taiwan Semiconductor
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Abstract: Maximum average forward rectified current per diode TSF30U60C UNIT VRRM PARAMETER 60 , superimposed on rated load per diode IFSM 250 A Peak repetitive reverse surge current (Note 1 , . Maximum instantaneous forward voltage per diode (Note 2) MAX. VBR Breakdown voltage ( IR =1.0mA , °C VF - Maximum instantaneous reverse current per diode at rated reverse voltage Tj = 25 , thermal resistance per diode RθjC 3 Operating junction temperature range TJ - 55 to +150 Taiwan Semiconductor
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