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"B14 DIODE"

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Abstract: Ambient RÓ¨JA 50 1/8 Unit o C/W Version: B14 TSM6N60 TSM6N60 600V N-Channel Power MOSFET , Delay Time VDD = 300V, RGEN =25Ω Turn-Off Fall Time ns Source-Drain Diode Ratings and Characteristic Source Current Diode Forward Voltage IS = 6.0A, VGS = 0V Note: Pulse Width < 300Âus, Duty Cycle < 2%. 2/8 Version: B14 TSM6N60 TSM6N60 600V N-Channel Power MOSFET Electrical Characteristics , Capacitance Gate Charge On-Resistance vs. Junction Temperature Source-Drain Diode Forward Voltage ... Taiwan Semiconductor
Original
datasheet

7 pages,
1076.78 Kb

TSM6N60 TEXT
datasheet frame
Abstract: forward rectified current per diode Peak forward surge current, 8.3 ms single half sine-wave superimposed on rated load per diode UNIT V 30 IF(AV) A 15 A 10000 V/μs VAC , 7.5A Instantaneous forward voltage per diode ( Note1 ) IF = 7.5A TJ = 25°C TJ = 125°C VF VF IF = 15A Instantaneous reverse current per diode at rated reverse voltage TJ = 25°C TJ = 125°C IR Typical thermal resistance per diode RθJC Operating junction temperature ... Taiwan Semiconductor
Original
datasheet

5 pages,
209.64 Kb

TSF30U100C TSF30U120C TEXT
datasheet frame
Abstract: rectified current per diode Peak forward surge current, 8.3 ms single half sine-wave superimposed on rated load per diode TST30H200CW TST30H200CW UNIT VRRM Maximum repetitive peak reverse voltage , 1500 V Typ. IF = 15A Instantaneous forward voltage per diode ( Note1 ) IF = 30A IF = 15A IF = 30A Instantaneous reverse current per diode at rated reverse voltage TJ = 25°C VF , diode RθJC 3 Operating junction temperature range TJ - 55 to +150 O C TSTG - ... Taiwan Semiconductor
Original
datasheet

5 pages,
185.77 Kb

TST30H150CW TST30H200CW TEXT
datasheet frame
Abstract: Temperature Source-Drain Diode Forward Voltage 3/6 Version: B14 TSM7N65A TSM7N65A 650V N-Channel Power , Ambient 1/6 Unit 3.1 o 65 o C/W C/W Version: B14 TSM7N65A TSM7N65A 650V N-Channel , © Turn-Off Fall Time ns Source-Drain Diode Ratings and Characteristic Source Current Integral reverse diode in IS - - 7 A Source Current (Pulse) the MOSFET ISM - - 28 A Diode Forward Voltage IS = 3A, VGS = 0V VSD - - 1.5 V Note: 1 ... Taiwan Semiconductor
Original
datasheet

6 pages,
479.08 Kb

TSM7N65A ITO-220 TEXT
datasheet frame
Abstract: Drain-Source On-Resistance Source-Drain Diode Forward Voltage 3/6 Version: B14 TSM15N03PQ33 TSM15N03PQ33 30V , t ≤ 10sec RӨJA 1/6 Unit 8 o 39 o C/W C/W Version: B14 TSM15N03PQ33 TSM15N03PQ33 , Time ns Drain-Source Diode Characteristics and Maximum Rating Drain-Source Diode Forward , : B14 TSM15N03PQ33 TSM15N03PQ33 30V N-Channel Power MOSFET Electrical Characteristics Curves Output , Version: B14 TSM15N03PQ33 TSM15N03PQ33 30V N-Channel Power MOSFET PDFN33 PDFN33 Mechanical Drawing Unit: Millimeters ... Taiwan Semiconductor
Original
datasheet

6 pages,
340.57 Kb

TSM15N03PQ33 PDFN33 TEXT
datasheet frame
Abstract: and Storage Temperature Range TJ, TSTG 1/9 - 55 to +150 W mJ A o C Version: B14 , ID = 8A, VGS = 10V, Turn-Off Fall Time Source-Drain Diode ns (Note 4) Forward On Voltage , : B14 TSM70N600 TSM70N600 700V, 8A, 0.6Ω N-Channel Power MOSFET Electrical Characteristics Curves , Voltage vs. Gate Charge On-Resistance vs. Junction Temperature Source-Drain Diode Forward Current vs. Voltage 3/9 Version: B14 TSM70N600 TSM70N600 700V, 8A, 0.6Ω N-Channel Power MOSFET Electrical ... Taiwan Semiconductor
Original
datasheet

9 pages,
979.03 Kb

TSM70N600 ITO-220 TEXT
datasheet frame
Abstract: SYMBOL per device Maximum average forward rectified current per diode Peak forward surge current, 8.3 ms single half sine-wave superimposed on rated load per diode UNIT VRRM Maximum , (rated VR) IFSM 1500 V Min. Maximum instantaneous forward voltage per diode ( Note1 , μA - 50 100 mA Maximum instantaneous reverse current per diode at rated reverse voltage TJ = 25°C TJ = 125°C Typical thermal resistance per diode Operating temperature range ... Taiwan Semiconductor
Original
datasheet

4 pages,
210.17 Kb

TSF30U45C TEXT
datasheet frame
Abstract: diode TSF30U60C TSF30U60C UNIT VRRM PARAMETER 60 V 30 IF(AV) A 15 Peak forward surge current, 8.3 ms single half sine-wave superimposed on rated load per diode IFSM 250 A , ) VBR 60 - - Maximum instantaneous forward voltage per diode (Note 2) IF = 15A TJ = , diode at rated reverse voltage TJ = 25°C TJ = 125°C IR V 0.57 0.53 V 0.55 - 500 μA - 60 mA O Typical thermal resistance per diode RθjC 3 Operating ... Taiwan Semiconductor
Original
datasheet

4 pages,
199.42 Kb

TSF30U60C TEXT
datasheet frame
Abstract: average forward rectified current per diode Peak forward surge current, 8.3 ms single half sine-wave superimposed on rated load per diode UNIT VRRM Maximum repetitive peak reverse voltage , MIN IF = 5A Instantaneous forward voltage per diode ( Note1 ) IF = 10A IF = 5A IF = 10A Instantaneous reverse current per diode at rated reverse voltage TJ = 25°C TJ = 125°C TJ = 25°C TJ = , diode RθJC 4 Operating junction temperature range TJ - 55 to +150 O C - 55 to ... Taiwan Semiconductor
Original
datasheet

4 pages,
205.74 Kb

TSF20U100C TEXT
datasheet frame
Abstract: ) PARAMETER SYMBOL per device Maximum average forward rectified current per diode Peak forward surge current, 8.3 ms single half sine-wave superimposed on rated load per diode UNIT VRRM , ) Maximum instantaneous forward voltage per diode (Note1) IF = 5A IF = 10A IF = 5A Maximum instantaneous reverse current per diode at rated reverse voltage Tj = 25°C Tj = 25°C Tj = 125°C IR , diode RθjC 4 Operating junction temperature range TJ - 55 to +150 O C TSTG - ... Taiwan Semiconductor
Original
datasheet

4 pages,
195.27 Kb

TSF10U60C TEXT
datasheet frame