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"Application of the CA3018"

Catalog Datasheet MFG & Type PDF Document Tags
Abstract: "Application of the CA3018 Integrated Circuit Transistor Array" for Suggested Applications · Custom , Features The CA3018 and CA3018A consist of four general purpose silicon NPN transistors on a common monolithic substrate. · Matched Monolithic General Purpose Transistors Two of the four transistors are , transistors of the CA3018 and the CA3018A are well suited to a wide variety of applications in low power , collector of each transistor of the CA3018 and CA3018A is isolated from the substrate by an integral diode Harris Semiconductor
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AN5296 Application note CA3018 an5296 ca3018 an5296 Darlington pair IC AN5296 application note Harris CA3018 120MH 500MH
Abstract: -5296 "Application of the RCA CA3018 Integrated-Circuit Transistor Array" for suggested applications. ÇH2 c I , to +125" C) The CA3018 and CA3018A consist of four general purpose silicon n-p-n transistors on a , CA3018 and the CA3018A are well suited to a wide variety of applications in low-power systems in the DC , construction. The CA3018A is similar to the CA3018 but features tighter control of current gain, leakage, and , collector of each transistor of the CA3018 and CA3018A Temperature Range: is isolated from the substrate by -
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TRANSISTOR 642 ca301b transistor 123 DL ICAN-5296 I426 529B I4259R I4260AI 92CS-M258RI 92CS-IS196
Abstract: Description · Matched Monolithic General Purpose Transistors The CA3018 and CA3018A consist of four , transistors of the CA3018 and the CA3018A are well suited to a wide variety of applications in low power , of the CA3018 Integrated Circuit Transistor Array" for Suggested Applications Pinout CA3018 , each transistor of the CA3018 and CA3018A is isolated from the substrate by an integral diode. The , . . . . . . . . . . . . . . . . . . . . . . . . . . . .±10% Two of the four transistors are Harris Semiconductor
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AN5296 Application of the CA3018 Darlington pair
Abstract: See Application Note, AN5296 "Application of the CA3018 Integrated Circuit Transistor Array" for , General Purpose Transistors The CA3018 and CA3018A consist of four general purpose silicon NPN , . . . . . . . . . . . . . . . . . . . . . . . . . . . . ±5mV The transistors of the CA3018 and , of this specification is not implied. NOTES: 1. The collector of each transistor of the CA3018 , . . . . . . . . . .±10% Two of the four transistors are connected in the Darlington Harris Semiconductor
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12 Pin Metal Can free Darlington pair IC Darlington Transistor Array Monolithic Transistor Pair
Abstract: for maximum flexibility. The transistors of the CA3018 and the CA3018A are well suited to a wide variety of applications in low power systems in the DC through VHF range. They may be used as discrete , Amplifiers â'¢ Temperature Compensated Amplifiers â'¢ See Application Note, AN5296 "Application of the , CA3018, CA3018A oatt'-^â'"â â'" General Purpose Transistor Arrays The CA3018 and CA3018A consist of four general purpose silicon NPN transistors on a common monolithic substrate. Two of the four -
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Abstract: for maximum flexibility. The transistors of the CA3018 and the CA3018A are well suited to a wide variety of applications in low power systems in the DC through VHF range. They may be used as discrete , "Application of the CA3016 Integrated Circuit Transistor Array" for Suggested Applications , lîC T -GA3018, CA3018A Général Purpose Transistor Arrays Description The CA3018 and CA3018A consist of four general purpose silicon NPN transistors on a common monolithic substrate. Two of the four -
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Abstract: , AN5296 ``Application of the CA3018 Integrated Circuit Transistor Array" for Suggested Applications , Capacitance NOTE: 1. The collector of each transistor of the CA3018 and CA3018A is Isolated from the substrate , transistors on a com m on monolithic substrate. Two of the lour transistors are connected in the Darlington , the C A 3 0 1 8 and the C A 3 0 1 8 A are well suited to a wide variety of applications in low power , circuits but in addition they provide the advantages of close electrical and thermal m atching inherent in -
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ba qz transistor CA3Q18
Abstract: Application Note, AN5296 "Application of the CA3018 Integrated Circuit Transistor Array" for Suggested , Collector-to-Substrate Capacitance NOTE: 1. The collector of each transistor of the CA3018 and CA3018A is isolated from , O R CA3018 General Purpose Transistor Arrays Description The CA3018 and CA3018A consist o f , . ±10% · VBE Matched - CA3018A. ±2mV - CA3018 , Transistor Pair for Low Power Applications at Frequencies from DC through the VHF Range · Custom Designed -
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transistor d2271 D2271 43DE271
Abstract: · See Application Note, AN5296 "Application of the CA3018 Integrated Circuit Transistor Array" for , . Two of the four transistors are connected in the Darlington configuration. The substrate is connected to a separate terminal for maximum flexibility. The transistors of the CA3018 and the CA3018A are , is similar to the CA3018 but features tighter control of current gain, leakage, and offset parameters , CA3018, CA3018A January 1999 File Number 338.5 General Purpose Transistor Arrays The CA3018 -
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Abstract: 1000 -1000 1.0 -0.7 - - - - File Mo. 595* Two Individual Transistors and ca3018,ca3118 a , Baam Laad (CA3018) L Page 59 Chip ICA3018, CA3118I H PagaSS File Nn>s. 338, 532; I CAN Nos. 5290, 5291« High-Fleliability Version, see Page 41. â'¢â'¢No suffix for CA3018, CA3018A Applications and Features For general use in signal processing systems in the dc through vhf range Custom designed , sat. typ. V lc-10mA vBE typ. V lc-1mA »C max. mA at lQ>1mA min. CA3018 338 15 20 0.23 0.715 50 30 -
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CA3096AE CA3096E CA3118AT thyristor firing circuits RCA 532 PNP Monolithic Transistor Pair rca h 532 rca CA3096 RCA 532 transistor CS-23846 CA3096 9ZCS-23S43
Abstract: without degrading its electrical performance. The unit consists of four broadband radiating elements , to 1 kW, with an input VSWR of 1.8:1 or less over the entire operating band. The standard antenna , , high-performance antenna capable of prolonged operation in severe shipboard environments. The inherent design , ; MIL-S-167, Type I Vibration; and the Service Conditions of MIL-E-16400F for Class 2 equipments , SHIPBOARD CA-3018, AS-1735/SRC OMNIDIRECTIONAL AROUND-THE-MAST ANTENNA Model CA-3018 is a AIL Systems
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CA-3230 CA-3260 MIL-S-901C AS-1735 UHF/Antenna M135
Abstract: Description The CA3018 and CA3018A consist of four general purpose silicon NPN transistors on a common monolithic substrate. Two of the four transistors are connected in the Darlington configuration. The substrate is connected to a separate terminal for maximum flexibility. The transistors of the GA3018 and the GA3018A are well suited to a wide variety of applications in low power systems in the DC through VHF range , advantages of close electrical and thermal matching inherent in integrated circuit construction. The CA3018A -
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Abstract: without degrading its electrical performance. The unit consists of four broadband radiating elements , to 1 kW, with an input VSWR of 1.8:1 or less over the entire operating band. The standard antenna , , high-performance antenna capable of prolonged operation in severe shipboard environments. The inherent design , ; MIL-S-167, Type I Vibration; and the Service Conditions of MIL-E-16400F for Class 2 equipments , SHIPBOARD CA-3018, AS-1735/SRC OMNIDIRECTIONAL AROUND-THE-MAST ANTENNA Model CA-3018 is a EDO Antenna
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antenna balun antenna mast
Abstract: separate terminal for maximum flexibility. The transistors of the CA3018 and the CA3018A are well suited to a wide variety of applications in low-power systems in the DC through VHF range. They may be used as discrete transistors in conventional circuits but in addition they provide the advantages of close , te g ra te d -C irc u it Transistor A rra y " fo r suggested applications. The CA3018 and CA3018A consist of four general purpose silicon n -p -n transistors on a common monolithic substrate. Two of the -
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LM 3018 1250C A3018
Abstract: , see companion Application Note AN5296 "Application of the CA3018 Integrated Circuit Transistor Array , transistors with two of the transistors connected to form a differentially connected pair. These types are , versions of the popular predecessor type CA3046.) Types CA3183A and CA3183 consist of five high current , and CA3183 are high voltage versions of the popular predecessor type CA3083.) The types with an "A" , Transistor Arrays Description The CA3146A, CA3146, CA3183A, and CA3183 are general purpose high voltage -
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CA3146M m14 transistor 3183a CA31B MAKING LD CA31B3A CA31B3 CA3146AE CA3146AM CA3146E
Abstract: Description The CA3018 and CA3018A consist of four general purpose silicon n -p -n transistors on a common monolithic sub strate. Two of the four transistors are connected in the Darlington configuration. The substrate is connected to a separate terminal for maximum flexibility. The transistors of the CA3018 and the CA3018A are well suited to a wide variety of applications In low -pow er sys tems in the DC through VHF , . The CA3018A is similar to the CA3018 but features tighter control of current gain, leakage, and offset -
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Abstract: Temperature Compensated Amplifiers · See Application Note, AN5296 "Application of the CA3018 , The CA3086 consists of five general-purpose silicon NPN transistors on a common m onolithic substrate. Two of the transistors are internally connected to form a differentially connected pair. The transistors of the CA3086 are well suited to a wide vari ety of applications in low-power system s at , , they also provide the very significant inherent advantages unique to integrated circuits, such as -
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harris 3086 CA3086 APPLICATION NOTE Application note CA3086 Application of the CA3086 application note an5296 190MH CA3086M CA3086M96 CA3086F
Abstract: Note AN5296 "Applications of the CA3018 Circuit Transistor Array" for Suggested Applications PART , Current NPN Transistor Array Description 100mA (Max) The CA3083 is a versatile array of five high current (to 100mA) NPN transistors on a com m on m onolithic substrate. In addition, two of these , are of special importance. Independent connections for each transistor plus a separate terminal for the substrate perm it maxim um flexibility in circuit design. Features · High lc -
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an5296 applications note CA3083 amplifier Transistor Array differential amplifier CA3083F CA3083M CA3083M96
Abstract: Note, AN5296 "Application of the CA3018 Integrated-Clrcult Transistor Array" for Suggested Applications , substrate. Two of the transistors are internally connected to form a differentially connected pair. The transistors of the CA3045 and CA3046 are well suited to a wide variety of applications in low power systems in , , in addition, they provide the very significant inherent integrated circuit advantages of close , 33 HA«TM® November 1996 CA3045, CA3046 General Purpose NPN Transistor Arrays Description The -
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d143 T transistor CA3046 NPN differential pair transistor matched transistors CA3045F CA3046M CA3046M96 14U1SBDIP A3046
Abstract: LINEAR TRANSISTOR AND DIODE ARRAYS, AND DIFFERENTIAL AMPLIFIERS PAGE SELECTION G U ID E . TRANSISTOR AND DIODE ARRAY, AND DIFFERENTIAL AMPLIFIER DATA SHEETS CA3018, CA3018A CA3028A, CA3028B, CA3053 CA3039 CA3045, CA3046 CA3049, CA3102 CA3054 CA3081, CA3082 CA3083 CA3086 CA3096, CA3096A, CA3096C CA3127 CA3141 CA3146, CA3146A, CA3183, CA3183A CA3227, CA3246 HFA3046, HFA3096, HFA3127, HFA3128 HFA3101 HFA3102 General Purpose Transistor Arrays -
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transistor A 798 transistor high power npn UHF transistor TRANSISTOR d 718 NPN transistor transistor military
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