500 MILLION PARTS FROM 12000 MANUFACTURERS

Datasheet Archive - Datasheet Search Engine

 

"AL 2450 dv"

Catalog Datasheet MFG & Type PDF Document Tags
Abstract: –¡40bT4 T31 SSW/I4N80AS SSW/I4N80AS N-CHANNEL POWER MOSFET Fig 15. Peak Diode Recovery dv/dt Test Circuit & Waveforms DUT tL O-' V h ^ Driver Rg* ÍL GS O— vDS L -TT- Same Type as DUT • dv/dt controlled , Area ■ Lower Leakage Current : 25 |jA (Max.) @ VDS = 800V ■ Low RDS(0m) 2.450 Q (Typ.)c Absolute , Avalanche Energy 0 13 mJ dv/dt Peak Diode Recovery dv/dt 0 2.0 V/ns Total Power Dissipation (Tc=25 °C , Range 1.04 -55 to +150 °C Maximum Lead Temp, for Soldering ■l Purposes, 1/8" from case for 5 ... OCR Scan
datasheet

6 pages,
322.41 Kb

diode lo2a SSW/I4N80AS TEXT
datasheet frame
Abstract: DUT ÊL ^ ds ■ , .) @ VD = 800V S = 3.0 D H Low Rqs(on) • 2.450 Ci (Typ.) Absolute Maximum Ratings Symbol , mJ Peak Diode Recovery dv/dt 2.0 V/ns Total Power Dissipation (Tc=25 °C) 130 W , ^AS Ur Repetitive Avalanche Energy ^AR dv/dt ^D T j . T stg V Operating Junction and -5 5 to +150 Storage Temperature Range °c Maximum Lead Temp, for Soldering ■l 300 ... OCR Scan
datasheet

10 pages,
181.88 Kb

SSP4N80AS TEXT
datasheet frame
Abstract: THYRISTORS Features ■ All diffused design ■ C en ter am plifying gate ■ G u a ra n te e d high dv/dt ■ G u a ra n te e d high di/dt ■ High surge cu rren t capability ■ Low th erm al im , ST083S ST083S Units 85 A 85 °C 135 A @ 50H z 2450 A @ 60H z 2560 A @ , Conditions 135 Max. peak, one half cycle, 2560 DC @ 77°C case temperature 2450 , 200ps, dv/dt: see table in device code (*) t = 10 to 20ps lor 400 to 800V devices; t = 15 to 30ps for ... OCR Scan
datasheet

9 pages,
466.22 Kb

125185/B ST083S TEXT
datasheet frame
Abstract: A @ 50Hz 2450 A @ 60Hz 2560 A @ 50Hz 30 KA2s @ 60Hz 27 KA2s , DC @ 77°C case temperature 2450 non-repetitive surge current I TSM 180° conduction, half , = 200us, dv/dt = 200V/us Blocking Parameter ST083S ST083S Units Conditions TJ = TJ max., linear to 80% VDRM, higher value available on request dv/dt Maximum critical rate of rise of , Ratings Table) 6 - P = Stud Base 1/2"-20UNF-2A -20UNF-2A threads 7 - Reapplied dv/dt code (for tq Test ... International Rectifier
Original
datasheet

9 pages,
235.05 Kb

ST083S AL 2450 dv I25185 TEXT
datasheet frame
Abstract: –¡ High dv/dt Capability □ Hermetic Packaging □ Excellent Surge and l2t Ratings Applications: â , 1 454 lb. g Mounting Force 5500 to 6000 2450 to 2670 lb. kg. P-166 P-166 fUMBZEX Powerex, Inc., 200 , Coefficients, Low-level Tj = 125°C, I = 15% lT(av) to rclT(av) Al B1 Cl D1 = 0.10625 = 0.047301 = 9.845E-06 845E-06 = , Turn-off Time lq Tj = 125°C, Ij = 2000A, diR/dt = 25A/(xsec Reapplied dv/dt = 200V/|isec Linear to VDRM.VR = 50V, Gate = 0V, RGK = 10ÔQ 150 jasec Minimum Critical dv/dt - Exponential to VDRM dv/dt Tj = ... OCR Scan
datasheet

4 pages,
505.02 Kb

LT 428 BP107 C450 C450PM AL 2450 dv TEXT
datasheet frame
Abstract: Voltage □ High di/dt Capability □ High dv/dt Capability □ Hermetic Packaging □ Excellent Surge , +150°C °C Approximate Weight 1 454 lb. g Mounting Force 5500 to 6000 2450 to 2670 lb. kg. P , 0.59931 0.2781 Volts mil Vtm Coefficients, Low-level Tj = 125°C, I = 15% lj(av) to itl-r(av) Al Bl C1 , /^isec Reapplied dv/dt = 200V/|xsec Linear to 80% VqR^, Vr = 50V, Gate = 0V, RGK = 100Q 150 usee Minimum Critical dv/dt - Exponential to VqRm dv/dt Tj = 125°C 400 V/|xsec Gate Trigger Current 'GT Tj ... OCR Scan
datasheet

4 pages,
497.67 Kb

LT 428 C451LD BP107 C451 AL 2450 dv TEXT
datasheet frame
Abstract: °C 135 A @ 50Hz 2450 A @ 60Hz 2560 A @ 50Hz 30 KA2s @ 60Hz 27 , DC @ 77°C case temperature I TSM Max. peak, one half cycle, 2450 t = 10ms , , ITM = 100A, commutating di/dt = 10A/Âus VR = 50V, tp = 200Âus, dv/dt = 200V/Âus Blocking , request dv/dt Maximum critical rate of rise of off-state voltage 500 V/μs IRRM IDRM , = VRRM (See Voltage Ratings Table) 6 - P = Stud Base 1/2"-20UNF-2A -20UNF-2A threads dv/dt - tq ... International Rectifier
Original
datasheet

9 pages,
212.03 Kb

I25243 TEXT
datasheet frame
Abstract: Rated Current [Vpk] Therm al Resistance Junction to Case (F^jq) [C /W ] M axim um l^ t fo r Fusing, (8.3 msec.) [A^sec] M ax. O ff-9 a te Leakage Current @ Rated V o lta g e [m Arm s] M in . O ff-9 a te dv/dt , Furnished, U n m ou nted A VA ILA BLE O P TIO N S -B 4D N orm ally Qosed (Form B) Example: D 2450-B, A 2450-B 400 Hz O peration 10-50 A m p M o d e ls O n ly Zero Cross Switching O nly Example: 4D 2450 24 ... OCR Scan
datasheet

3 pages,
249.99 Kb

2450B A2410 D2410 A2425 D2425 A2450 D2450 A2475 D2475 A2490 D2490 TEXT
datasheet frame
Abstract: Dynamic dv/dt Rating Current Sense 175°C Operating Temperature Fast Switching Ease of Paralleling , Description T h ird G e n e ra tio n H E X F E T s from Intern ation al R e ctifier pro vid e the d e sig n e , ±20 V E as Single Pulse Avalanche Energy © 30 mJ 4.5 V/ns P d @ T c = 25°C dv/dt Peak Diode Recovery dv/dt C D Tj O perating Junction and Storage Tem perature Range , © • dv/dt CONTROLLED BY RG • DRIVER SAME DEVICE GROUP AS DUT • lSD CONTROLLED BY DUTY FACTOR ... OCR Scan
datasheet

8 pages,
199.55 Kb

TEXT
datasheet frame
Abstract: V DRM /V RRM tq range (see table) TJ ST083S ST083S 85 85 135 2450 2560 30 27 400 to 1200 10 to 20 - 40 , on-state current I TSM Max. peak, one half cycle, non-repetitive surge current ST083S ST083S 85 85 135 2450 , Resistive load, Gate pulse: 10V, 5 source VR = 50V, tp = 200us, dv/dt = 200V/us TJ= 25°C, VDM = rated VDRM , time Blocking Parameter dv/dt IRRM IDRM Maximum critical rate of rise of off-state voltage Max , Table) - P = Stud Base 1/2"-20UNF-2A -20UNF-2A threads - Reapplied dv/dt code (for tq Test Condition) - tq code - ... International Rectifier
Original
datasheet

10 pages,
252.34 Kb

AL 2450 dv I25185 ST083S TEXT
datasheet frame