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Part Manufacturer Description PDF & SAMPLES
CR-2450/G1AN Panasonic Electronic Components Primary Battery, 2450
0600-00016 LAIRD PLC ANT S181AH-2450 5 2DBI RPSMA
0600-00022 LAIRD PLC ANT S151AH-2450 7 5DBI RPSMA
TLH-2450/P Tadiran Batteries Primary Battery, Lithium, 2450, 3.6V, 0.55Ah
3610KL-04W-B30-D00 NMB Technologies Corporation FAN DC AXIAL 12V 92X25 2450 RPM
3610KL-05W-B30-G00 NMB Technologies Corporation FAN DC AXIAL 24V 92X25 2450 RPM

"AL 2450 dv"

Catalog Datasheet MFG & Type PDF Document Tags
Abstract: ¡40bT4 T31 SSW/I4N80AS N-CHANNEL POWER MOSFET Fig 15. Peak Diode Recovery dv/dt Test Circuit & Waveforms DUT tL O-' V h ^ Driver Rg* ÃL GS Oâ'" vDS L -TT- Same Type as DUT â'¢ dv/dt controlled , Area â  Lower Leakage Current : 25 |jA (Max.) @ VDS = 800V â  Low RDS(0m) 2.450 Q (Typ.)c Absolute , Avalanche Energy 0 13 mJ dv/dt Peak Diode Recovery dv/dt 0 2.0 V/ns Total Power Dissipation (Tc=25 °C , Range 1.04 -55 to +150 °C Maximum Lead Temp, for Soldering â l Purposes, 1/8" from case for 5 -
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diode lo2a
Abstract: DUT ÃL ^ ds â  , .) @ VD = 800V S = 3.0 D H Low Rqs(on) â'¢ 2.450 Ci (Typ.) Absolute Maximum Ratings Symbol , mJ Peak Diode Recovery dv/dt 2.0 V/ns Total Power Dissipation (Tc=25 °C) 130 W , ^AS Ur Repetitive Avalanche Energy ^AR dv/dt ^D T j . T stg V Operating Junction and -5 5 to +150 Storage Temperature Range °c Maximum Lead Temp, for Soldering â l 300 -
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SSP4N80AS 00M1N
Abstract: THYRISTORS Features â  All diffused design â  C en ter am plifying gate â  G u a ra n te e d high dv/dt â  G u a ra n te e d high di/dt â  High surge cu rren t capability â  Low th erm al im , ST083S Units 85 A 85 °C 135 A @ 50H z 2450 A @ 60H z 2560 A @ , Conditions 135 Max. peak, one half cycle, 2560 DC @ 77°C case temperature 2450 , 200ps, dv/dt: see table in device code (*) t = 10 to 20ps lor 400 to 800V devices; t = 15 to 30ps for -
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125185/B D-431 D-437 D-438 D-439
Abstract: A @ 50Hz 2450 A @ 60Hz 2560 A @ 50Hz 30 KA2s @ 60Hz 27 KA2s , DC @ 77°C case temperature 2450 non-repetitive surge current I TSM 180° conduction, half , = 200us, dv/dt = 200V/us Blocking Parameter ST083S Units Conditions TJ = TJ max., linear to 80% VDRM, higher value available on request dv/dt Maximum critical rate of rise of , Ratings Table) 6 - P = Stud Base 1/2"-20UNF-2A threads 7 - Reapplied dv/dt code (for tq Test International Rectifier
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AL 2450 dv I25185 1000H 2500H 083SS
Abstract: ¡ High dv/dt Capability â¡ Hermetic Packaging â¡ Excellent Surge and l2t Ratings Applications: â , 1 454 lb. g Mounting Force 5500 to 6000 2450 to 2670 lb. kg. P-166 fUMBZEX Powerex, Inc., 200 , Coefficients, Low-level Tj = 125°C, I = 15% lT(av) to rclT(av) Al B1 Cl D1 = 0.10625 = 0.047301 = 9.845E-06 = , Turn-off Time lq Tj = 125°C, Ij = 2000A, diR/dt = 25A/(xsec Reapplied dv/dt = 200V/|isec Linear to VDRM.VR = 50V, Gate = 0V, RGK = 10Ã"Q 150 jasec Minimum Critical dv/dt - Exponential to VDRM dv/dt Tj = -
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BP107 C450PM C450 LT 428 P-165 20VDC 1000Q P-168
Abstract: Voltage ⡠High di/dt Capability ⡠High dv/dt Capability ⡠Hermetic Packaging ⡠Excellent Surge , +150°C °C Approximate Weight 1 454 lb. g Mounting Force 5500 to 6000 2450 to 2670 lb. kg. P , 0.59931 0.2781 Volts mil Vtm Coefficients, Low-level Tj = 125°C, I = 15% lj(av) to itl-r(av) Al Bl C1 , /^isec Reapplied dv/dt = 200V/|xsec Linear to 80% VqR^, Vr = 50V, Gate = 0V, RGK = 100Q 150 usee Minimum Critical dv/dt - Exponential to VqRm dv/dt Tj = 125°C 400 V/|xsec Gate Trigger Current 'GT Tj -
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C451LD C451 P-161 P-163 P-164
Abstract: °C 135 A @ 50Hz 2450 A @ 60Hz 2560 A @ 50Hz 30 KA2s @ 60Hz 27 , DC @ 77°C case temperature I TSM Max. peak, one half cycle, 2450 t = 10ms , , ITM = 100A, commutating di/dt = 10A/Âus VR = 50V, tp = 200Âus, dv/dt = 200V/Âus Blocking , request dv/dt Maximum critical rate of rise of off-state voltage 500 V/μs IRRM IDRM , = VRRM (See Voltage Ratings Table) 6 - P = Stud Base 1/2"-20UNF-2A threads dv/dt - tq International Rectifier
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I25243 ST083SP
Abstract: Rated Current [Vpk] Therm al Resistance Junction to Case (F^jq) [C /W ] M axim um l^ t fo r Fusing, (8.3 msec.) [A^sec] M ax. O ff-9 a te Leakage Current @ Rated V o lta g e [m Arm s] M in . O ff-9 a te dv/dt , Furnished, U n m ou nted A VA ILA BLE O P TIO N S -B 4D N orm ally Qosed (Form B) Example: D 2450-B, A 2450-B 400 Hz O peration 10-50 A m p M o d e ls O n ly Zero Cross Switching O nly Example: 4D 2450 24 -
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2450B 10-90A A2410 D2410 A2425 D2425 A2450
Abstract: Dynamic dv/dt Rating Current Sense 175°C Operating Temperature Fast Switching Ease of Paralleling , Description T h ird G e n e ra tio n H E X F E T s from Intern ation al R e ctifier pro vid e the d e sig n e , ±20 V E as Single Pulse Avalanche Energy © 30 mJ 4.5 V/ns P d @ T c = 25°C dv/dt Peak Diode Recovery dv/dt C D Tj O perating Junction and Storage Tem perature Range , © â'¢ dv/dt CONTROLLED BY RG â'¢ DRIVER SAME DEVICE GROUP AS DUT â'¢ lSD CONTROLLED BY DUTY FACTOR -
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IRCZ44 SS452
Abstract: V DRM /V RRM tq range (see table) TJ ST083S 85 85 135 2450 2560 30 27 400 to 1200 10 to 20 - 40 , on-state current I TSM Max. peak, one half cycle, non-repetitive surge current ST083S 85 85 135 2450 , Resistive load, Gate pulse: 10V, 5 source VR = 50V, tp = 200us, dv/dt = 200V/us TJ= 25°C, VDM = rated VDRM , time Blocking Parameter dv/dt IRRM IDRM Maximum critical rate of rise of off-state voltage Max , Table) - P = Stud Base 1/2"-20UNF-2A threads - Reapplied dv/dt code (for tq Test Condition) - tq code - International Rectifier
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Abstract: International SS Rectifier PD-9.529B IRCZ44 HEXFET® Power MOSFET â'¢ Dynamic dv/dt Rating â , Factor 1.0 W/°C Vgs Gate-to-Source Voltage ±20 V Eas Single Pulse Avalanche Energy © 30 mJ dv/dt Peak Diode Recovery dv/dt ® 4.5 V/ns Tj Operating Junction and -55 to+175 Tstg Storage Temperature Range , IRCZ44 t-Vdd Fig10a. Switching Time Test Circuit -»L td{on) V U- , PLANE â'¢ LOW LEAKAGE INDUCTANCE CURRENT TRANSFORMER â'¢ dv/dt CONTROLLED BY Rg . DRIVER SAME DEVICE -
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SO402 402d 529B IRCz44 equivalent
Abstract: V DRM /V RRM tq range (see table) TJ ST083S 85 85 135 2450 2560 30 27 400 to 1200 10 to 20 - 40 , on-state current I TSM Max. peak, one half cycle, non-repetitive surge current ST083S 85 85 135 2450 , Resistive load, Gate pulse: 10V, 5 source VR = 50V, tp = 200us, dv/dt = 200V/us TJ= 25°C, VDM = rated VDRM , time Blocking Parameter dv/dt IRRM IDRM Maximum critical rate of rise of off-state voltage Max , Table) - P = Stud Base 1/2"-20UNF-2A threads - Reapplied dv/dt code (for tq Test Condition) - tq code - International Rectifier
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AL 2450 dv circuit ST083 TO209AC
Abstract: iron core can cause severe inrush currents. The peak switching relay al- Solid State Relay , 4 to 32 VDC RC 2410 -D 06 RC 2425 -D 06 RC 2450 -D 06 4 to 32 VDC RC 4410 -D 12 RC , =1-10 ms Critical dI/dt On-state voltage drop @ rated current Critical dV/dt commutating Critical dV Carlo Gavazzi
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AL 2425 dv AL 2450 dv circuit diagram al 60 dv 2425 varistor wiring diagram
Abstract: 200 35 0 80 700 2450. 00 100 125 2/3 VDRM 5 0 1 00 5 0 1 5 125 -40-125 10 0 125 39RC30 Bi-fy?- 400 300 35 0 80 700 2450. 00 100 125 2/3 VDRM 5 0 1 00 5 0 1 5 125 -40-125 10 0 125 39RC40 500 400 35 0 80 700 2450. 00 100 125 2/3 VDRM 5 0 1 00 5 0 1 5 125 -40-125 10 0 125 39RC50 600 500 35 0 80 700 2450. 00 100 125 2/3 VDRM 5 0 1 00 5 0 1 5 125 -40-125 10 0 125 39RC60 700 600 35 0 80 700 2450. 00 , Vtm Vgd (min) dv/dt min) *typ Tq *typ IH Rth wm SÌ £ VfT /yt o 1 vgt -
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SF1500EX24 SF1500GX21 29RD100 29RD120 29RD80 29RD60 21RC60 4a2d SF1500G27 SF1500J27 SF1500L27 SF1500U27
Abstract: 70.0 KA M axim um perm issible surge energy 10ms duration, V R < 10 volts 24.50 x 1 0 6 , W P GM P e ak gate power 100ns pulse width 30 W dv/dt Rate of rise of off-state , trigger any device 0.25 V D Therm al resistance, junction to heat sink 0.011 0.022 K/W , (see ratings) * dv/dt C o d e for 80% V DRM 200V/|is - No C ode 300V/ns - G O O C H - 36.825 , Typical code: N 1600CH 1O LO O , 1000 V DRM 1000 V RRM , 1000V/ns dv/dt to 80% V DRM , T hick Housing â -
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0GD27 N1600/3
Abstract: ASYNCHRONOUSRECEIVER/TRANSMITTER DESCRIPTION PLCC Package The ST16C 2450 is a dual universal asynchronous , S T 16C 2450 provides internal loop-back capability fo r on board diagnostic testing. The S T16C 2450 is fabricated in an advanced 0 .6n C M O S process to achieve low drain pow er and high speed , ) received from serial port to ST 16C 2450 receive input circuit. A m ark (high) is logic one and a space , at this pin enables the ST16C 2450 / CPU d ata transfer operation. XTAL1 16 18 I C -
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ST16C2450 16C2450 16C2450CJ44 S16450 TI16C 162450-RD-1
Abstract: high dv/dt Guaranteed high di/dt High surge current capability Low thermal impedance High speed , A @ 50Hz 2450 A @ 60Hz 2560 A @ 50Hz 30 KA2s @ 60Hz 27 KA2s V , @ 77°C case temperature I TSM Max. peak, one half cycle, 2450 t = 10ms No voltage , TJ = TJ max, ITM = 100A, commutating di/dt = 10A/us VR = 50V, tp = 200us, dv/dt: see table in device , available on request dv/dt Maximum critical rate of rise of off-state voltage 500 V/ us IRRM International Rectifier
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thyristor cp 04 95 I25185/B T083S
Abstract: /dt and dv/dt conditions in various phase control applications. FEATURES: Low On-State Voltage High di/dt Capability High dv/dt Capability Hermetic Ceramic Package Excellent Surge and I2t Ratings , Turn-Off Tq Itavg VDRM-VRRM TC20 4400 4200 4000 3600 44 42 40 36 2450 24 0 Gate , Rating Units VDRM-VRRM 4400 Volts Average On-State Current, TC=73°C IT(Avg.) 2450 , Time tq 3.56E-04 -1.66E-02 VD = 0.5·VDRM Gate Drive: 40V - 20 Tj=125°C dv/dt = 20V/us to 67 Powerex
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TC20442402DH TC20 2450A 4400V 05E-01 0E-02 0E-03
Abstract: at high di/dt and dv/dt conditions in various phase control applications. FEATURES: Low On-State Voltage High di/dt Capability High dv/dt Capability Hermetic Ceramic Package Excellent Surge , 2450 24 0 Gate IGT Leads 2 500us 300ma (typ.) (max) 12" Revised , IT(Avg.) 2450 A RMS On-State Current, TC=73° C IT(RMS) 3848 A Average On-State , D td Turn-Off Time tq -1.66E-02 VD = 0.5â'¢VDRM Gate Drive: 40V - 20 Tj=125° C dv/dt Powerex
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Abstract: A D 8 7 D AN AL AF AD 5 11 1 2 3 4 70 Ratings & WR & & WR & 9 G%P P: AK AL TYP M CHAMFER 45° Z AA H J K 3,1 AB AC AM TYP C , 12 2300 2350 2400 2450 2500 2550 2600 2650 2700 FREQUENCY (MHz) 5 2300 2350 2400 2450 2500 2550 2600 2650 2700 FREQUENCY (MHz) 0.8 2300 2350 2400 2450 2500 2550 2600 2650 2700 FREQUENCY (MHz , COMPRESSION 21 20 19 18 17 2300 2350 2400 2450 2500 2550 2600 2650 2700 FREQUENCY (MHz) 36 1.0 Mini-Circuits
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TAMP-272LN al 2450 2002/95/EC TB-468 PL-293
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