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Abstract: rated output power Nitride passivated die for enhanced reliability 1 ADVANCED: Data Sheets contain , Released - Rev. 9 2 ADVANCED: Data Sheets contain information regarding a product M/A-COM Technology , . MRF141 RF Power FET 150W, to 175MHz, 28V M/A-COM Products Released - Rev. 9 4 ADVANCED: Data , . MRF141 RF Power FET 150W, to 175MHz, 28V M/A-COM Products Released - Rev. 9 7 ADVANCED: Data , Released - Rev. 9 11 ADVANCED: Data Sheets contain information regarding a product M/A-COM Technology M/A-COM
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175MH
Abstract: ADVANCED: Data Sheets contain information regarding a product M/A-COM Technology Solutions · North America , . MRF141G RF Power FET 300W, 175MHz, 28V M/A-COM Products Released - Rev. 3 3 ADVANCED: Data , Released - Rev. 3 4 ADVANCED: Data Sheets contain information regarding a product M/A-COM Technology , . MRF141G RF Power FET 300W, 175MHz, 28V M/A-COM Products Released - Rev. 3 6 ADVANCED: Data , ADVANCED: Data Sheets contain information regarding a product M/A-COM Technology Solutions · North America M/A-COM
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MRF141G data sheet
Abstract: ADVANCED: Data Sheets contain information regarding a product M/A-COM Technology Solutions · North America , . 07.07 4 ADVANCED: Data Sheets contain information regarding a product M/A-COM Technology Solutions , : Broadband Power FET 4W, to 500MHz, 28V M/A-COM Products Released - Rev. 07.07 5 ADVANCED: Data , . 07.07 7 ADVANCED: Data Sheets contain information regarding a product M/A-COM Technology Solutions , : Broadband Power FET 4W, to 500MHz, 28V M/A-COM Products Released - Rev. 07.07 8 ADVANCED: Data M/A-COM
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MRF160 RF MOSFET Driver ADVANCED POWER TECHNOLOGY EUROPE 500MH
Abstract: . OUTPUT POWER 6 ADVANCED: Data Sheets contain information regarding a product M/A-COM Technology , ADVANCED: Data Sheets contain information regarding a product M/A-COM Technology Solutions · North America , Power. Graph 2. Two Tone: Intermodulation Distortion vs Output Power Graph 4. 4 ADVANCED: Data , EFFICIENCY VS. OUTPUT POWER GRAPH 6. PHS ACPR VS. OUTPUT POWER 5 ADVANCED: Data Sheets contain , MAPL-000822-002PP LDMOS RF Line Power FET Transistor 2 W , 800-2200 MHz, 28V M/A-COM Products M/A-COM
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QFN-16 960MH
Abstract: Output power - 150 W Power gain - 12.5 dB Efficiency - 60% Typical performance @ 225 MHz, 28 Vdc Output power - 200 W Power gain - 15 dB Efficiency - 65% 1 ADVANCED: Data Sheets contain , N-Channel enhancement mode · · · · Guaranteed performance @ 500 MHz, 28 Vdc Output power - 150 W Power gain - 10 dB (min.) Efficiency - 50% (min.) 100% tested for load mismatch at all , 17 pF Simplified AVC, ALC and modulation CASE 375­04, STYLE 2 Typical data for power M/A-COM
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MRF275G uhf 150w mosfet 150W 500MHZ 28V AN211A
Abstract: /A-COM Technology Solutions · North America Tel: 800.366.2266 · Europe Tel: +353.21.244.6400 is , Test Fixture. 2 ADVANCED: Data Sheets contain information regarding a product M/A-COM Technology , Technology Solutions · North America Tel: 800.366.2266 · Europe Tel: +353.21.244.6400 is considering for , : Intermodulation Distortion vs Output Power Graph 4. 4 ADVANCED: Data Sheets contain information regarding a product M/A-COM Technology Solutions · North America Tel: 800.366.2266 · Europe Tel: +353.21.244.6400 is M/A-COM
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fet transistor rf RF FET transistor
Abstract: power = 45 W Power gain = 17 dB (min) Efficiency = 60% (min) Excellent thermal stability, ideally , CASE 211­07, STYLE 2 Typical data for power amplifier applications in industrial, commercial and amateur radio equipment · Typical performance at 30 MHz, 28 Vdc Output power = 30 W (PEP) Power gain = 20 dB (typ.) Efficiency = 50% (typ.) IMD(d3) (30 W PEP) ­32 dB (typ.) 1 ADVANCED: Data Sheets contain information regarding a product M/A-COM Technology Solutions · North America Tel: 800.366.2266 M/A-COM
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MRF171A mrf171 150MH
Abstract: Rev. 05202009 3 ADVANCED: Data Sheets contain information regarding a product M/A-COM Technology , : Broadband RF Power FET 5.0W, to 400MHz, 28V M/A-COM Products Released - Rev. 05202009 4 ADVANCED , Rev. 05202009 6 ADVANCED: Data Sheets contain information regarding a product M/A-COM Technology , : Broadband RF Power FET 5.0W, to 400MHz, 28V M/A-COM Products Released - Rev. 05202009 7 ADVANCED , Rev. 05202009 9 ADVANCED: Data Sheets contain information regarding a product M/A-COM Technology M/A-COM
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MRF134 AN721 AN215A MRF137 RF POWER MOSFET 400MH
Abstract: MRF151A Part Status: Released RF Power Field-Effect Transistor 150W, 50V, 175MHz N-Channel Broadband MOSFET Features · Enhanced thermal performance · Higher power dissipation Guaranteed Performance at 30 MHz, 50 V: · Output Power - 150 W · Gain - 18 dB (22 dB Typ) · Efficiency - 40% Typical Performance at 175 MHz, 50 V: · Output Power - 150 W · Gain - 13 dB · Low Thermal Resistance · Ruggedness Tested at Rated Output Power · Nitride Passivated Die for Enhanced Reliability M M/A-COM
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Abstract: modulation techniques 1 ADVANCED: Data Sheets contain information regarding a product M/A-COM Technology , ADVANCED: Data Sheets contain information regarding a product M/A-COM Technology Solutions · North America , performance Output power = 15 watts Narrowband gain = 16 dB (Typ.) Efficiency = 60% (Typ.) · Small­ and , . Performance is based on target specifications, simulated results, · Europe Tel: 44.1908.574.200 / Fax , Technology Visit www.macomtech.com for additional data sheets and product information. Solutions has under M/A-COM
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MRF136
Abstract: . This is an additional advantage of RF MOS power FETs. 11 ADVANCED: Data Sheets contain information , · · Guaranteed performance at 150 MHz, 28 V: Output power = 80 W Gain = 11 dB (13 dB typ.) Efficiency = 55% min. (60% typ.) Low thermal resistance Ruggedness tested at rated output power Nitride , stability; suited for Class A operation CASE 211­11, STYLE 2 1 ADVANCED: Data Sheets contain information regarding a product M/A-COM Technology Solutions · North America Tel: 800.366.2266 / Fax M/A-COM
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MRF173
Abstract: a positive voltage is applied to the gate. RF power FETs require forward bias for 16 ADVANCED , applications using single ended circuits at frequencies to 500 MHz. The high power, high gain and broadband , · · Guaranteed performance @ 500 MHz, 28 Vdc Output power - 100 W Power gain - 8.8 dB typ. Efficiency - 55% typ. 100% ruggedness tested at rated output power Low thermal resistance Low Crss - 17 pF typ. @ VDS = 28 V CASE 333­04, STYLE 2 1 ADVANCED: Data Sheets contain information M/A-COM
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MRF275L MOSFET TEST SIMPLE Procedures mosfet 100w amplifier Simple test MOSFET Procedures 100w fm transmitter hf amplifier 100w
Abstract: bands. 1 ADVANCED: Data Sheets contain information regarding a product M/A-COM Technology Solutions , MRF151G Part Status: Released RF Power Field-Effect Transistor 300 W, 50 V, 175 MHz N-Channel , at 175 MHz, 50 V: · · · · · · Output Power - 300 W Gain - 14 dB (16 dB Typ) Efficiency - 50% Low Thermal Resistance - 0.35°C/W Ruggedness Tested at Rated Output Power Nitride , and military applications at frequencies to 175 MHz. The high power, high gain and broadband M/A-COM
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mrf151g 300 mosfet m
Abstract: circuit, 30MHz 3 ADVANCED: Data Sheets contain information regarding a product M/A-COM Technology , . MRF150 RF Power FET 150W, to 150MHz, 50V M/A-COM Products Released - Rev. 9 5 ADVANCED: Data , . MRF150 RF Power FET 150W, to 150MHz, 50V M/A-COM Products Released - Rev. 9 8 ADVANCED: Data , MRF150 RF Power FET 150W, to 150MHz, 50V Designed primarily for linear large-signal output , ): ­60dB (Typ.) · Specified 50V, 30MHz characteristics Output power = 150 Watts Power gain = 17 dB (Typ M/A-COM
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mrf-150 rf power FET
Abstract: =300us, Duty=10%. Ordering Information MAGX-003135-120L00 MAGX-003135-SB5PPR 120W GaN Power Transistor Evaluation Fixture 1 ADVANCED: Data Sheets contain information regarding a product M/A-COM Technology , 2.2 pF 2 ADVANCED: Data Sheets contain information regarding a product M/A-COM Technology , MAGX-003135-120L00 GaN HEMT Pulsed Power Transistor 3.1 - 3.5 GHz, 120W Peak, 300us Pulse, 10 , gold metalized matched Gallium Nitride (GaN) on Silicon Carbide RF power transistor optimized for M/A-COM
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EAR99 120L00
Abstract: observed. 1 ADVANCED: Data Sheets contain information regarding a product M/A-COM Technology Solutions , ADVANCED: Data Sheets contain information regarding a product M/A-COM Technology Solutions · North America , Technology Solutions · North America Tel: 800.366.2266 · Europe Tel: +353.21.244.6400 is considering for , ADVANCED: Data Sheets contain information regarding a product M/A-COM Technology Solutions · North America , RATIO VS. OUTPUT POWER 6 ADVANCED: Data Sheets contain information regarding a product M/A-COM M/A-COM
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MAPLST1900-060CF 1890MH
Abstract: -003135-SB5PPR 120W GaN Power Transistor Evaluation Fixture 1 ADVANCED: Data Sheets contain information regarding , , 300us Pulse, 10% Duty Preliminary 28 Sept 11 Peak Output Power vs. Input Power 4 ADVANCED , , 300us Pulse, 10% Duty Preliminary 28 Sept 11 Peak Output Power vs. Input Power 6 ADVANCED , , 300us Pulse, 10% Duty Preliminary 28 Sept 11 Peak Output Power vs. Input Power 8 ADVANCED , MAGX-003135-120L00 GaN HEMT Pulsed Power Transistor 3.1 - 3.5 GHz, 120W Peak, 300us Pulse, 10 M/A-COM
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003135 03135-120L00
Abstract: 4 ADVANCED: Data Sheets contain information regarding a product M/A-COM Technology Solutions · , : ADJACENT CHANNEL POWER RATIO VS. OUTPUT POWER 6 ADVANCED: Data Sheets contain information regarding a , MAPLST2122-030CF LDMOS RF Line Power FET Transistor 30 W , 2110-2170 MHz, 28V M/A-COM Products , frequency band. Suitable for TDMA, CDMA, and multicarrier power amplifier applications. · 30W output power , , -45dBc ACPR @ 4.096MHz) Output power: 4.5W (typ.) Gain: 12dB (typ.) Efficiency: 16% (typ.) 10:1 VSWR M/A-COM
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28VDC 096MH 2110MH
Abstract: 1 ADVANCED: Data Sheets contain information regarding a product M/A-COM Technology Solutions · , . N­Channel enhancement mode · Guaranteed 28 V, 150 MHz performance Output power = 30 W Minimum gain = 13 , based on target specifications, simulated results, · Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300 , Technology Visit www.macomtech.com for additional data sheets and product information. Solutions has under , been fixed. Engineering samples and/or test data may be available. M/A-COM Technology Solutions Inc M/A-COM
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Abstract: 1 ADVANCED: Data Sheets contain information regarding a product M/A-COM Technology Solutions · , . 01302012 10 ADVANCED: Data Sheets contain information regarding a product M/A-COM Technology Solutions , Product Image · Guaranteed 28 V, 150 MHz performance Output power = 30 W Minimum gain = 13 dB , on target specifications, simulated results, · Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300 and , Technology Visit www.macomtech.com for additional data sheets and product information. Solutions has under M/A-COM
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