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SN74S1052NSR Texas Instruments 16-Bit Schottky Barrier Diode Bus-Termination Array 20-SO 0 to 70
SN74S1053N Texas Instruments 16-Bit Schottky Barrier Diode Bus-Termination Array 20-PDIP 0 to 70
SN74S1056D Texas Instruments 8-bit Schottky Barrier Diode Bus-Termination Array 16-SOIC 0 to 70
SN74S1053PW Texas Instruments 16-Bit Schottky Barrier Diode Bus-Termination Array 20-TSSOP 0 to 70
SN74S1051N Texas Instruments 12-Bit Schottky Barrier Diode Bus-Termination Array 16-PDIP 0 to 70
SN74S1052NSRE4 Texas Instruments 16-Bit Schottky Barrier Diode Bus-Termination Array 20-SO 0 to 70

"A low barrier Schottky metal was used"

Catalog Datasheet MFG & Type PDF Document Tags
Abstract: Schottky Barrier Diodes Characteristics A Schottky barrier diode contains a metal-semiconductor barrier formed by deposition of a metal layer on a semiconductor. The resulting non-linear , SCHOTTKY BARRIER DIODE SiO2 SCHOTTKY BARRIER METAL SCHOTTKY BARRIER n-TYPE SILICON n-TYPE , Types of Diode Construction There are several assembly geometries used for Schottky barrier diodes , the hole to make the small area Schottky barrier. Then gold is deposited to provide a larger Hewlett-Packard
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HSMS-282X HSMS-286X gold metal detectors IN5711 in5711 equivalent diode ring mixer Metal Detector PN Junction Diode oscillator AN988 26/IB
Abstract: C haracteristics o f Schottky Barrier D iodes A Schottky barrier diode contains a metal-semiconductor barrier formed by deposition of a metal layer on a semiconduc tor. The resulting non-linear diode , onstruction There are several assembly geometries used for Schottky barrier diodes. Three types used in this , techniques are used to open a small hole in the oxide. The appropriate metal is deposited in the hole to make the small area Schottky barrier. Then gold is deposited to provide a larger surface for the -
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HSMS0001 hsch 3486 zero bias schottky diode Silicon Point Contact Mixer Diodes
Abstract: W O ñ H EW LETT' 1"KM PACKARD Schottky Barrier Diodes C haracteristics A Schottky barrier diode contains a metal-semiconductor barrier formed by deposition of a metal layer on a , applications. Types o f Diode Construction There are several assembly geometries used for Schottky barrier , oxide. The appropriate metal is depos ited in the hole to make the small area Schottky barrier. Then , "barrier height" is related to the voltage required for a given current. Low voltage corresponds to low -
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Microwave zero bias detector diodes
Abstract: /GaAs processes use a Ti/Pt/Au stack for the first metal interconnect which results in a Schottky diode , . Typically, a lower turn-on Schottky diode can be configured as a planar doped barrier diode detector [2]. , semiconductor for reference. With this work we report on a novel Schottky diode with a lowered barrier , Low Turn-On Voltage Schottky Diode in InGaP/GaAs HBT/BiFET Processes Cristian Cismaru and Peter J , diodes are desired for added design flexibility. In this work we report a novel Schottky diode with a Skyworks Solutions
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Abstract: and reduced ruggedness. A low barrier Schottky metal was used. A cross section of the fabricated , lead to extremely high leakage due to the low Schottky barrier metal used in this case. Fig. 2 shows , Schottky Rectifier used as OR-ing diode is the low forward Voltage Drop. At the same time a Max Junction , simulations: 1) In order to reduce the Forward Drop and keep a low leakage, a combination of a low Schottky , experienced by the Schottky Diode in "ORing" applications, were the device is used as a protections device International Rectifier
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feature of ic UM 66 wo02 Trench MOS Schottky Rectifier um 66 ic trench 80CPT015 WO02/19433
Abstract: height as a function of AC frequency used in the C-V measurements. At low frequency the barrier height , protection nitride away to expose the GaAs surface. A Ti/Pt/Au Schottky contact metal is deposited on the , Schottky contact metal deposition. ( ): After HCl dipping. 0.81 0.95 0.9 0.79 Barrier Height , : hong.shen@skyworksinc.com Telephone: (805) 480-4481 Keywords: GaAs, Schottky diode, dry etch, barrier height, plasma , height measured from a large area Schottky diode, the GaAs surface damage can be characterized in terms Skyworks Solutions
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Abstract: frequency range 8 GHz to 12 GHz. Hewlett-Packard Schottky barrier diode model 5082-2207 is used. Low , semiconductor and metal is called a Schottky barrier. P-doped Schottky barrier diodes excel at applications , have on Schottky barrier diodes. Performance improves at lower temperatures in a predictable manner , The Schottky diode is a rectifying metal-semiconductor contact formed between a metal and n-doped , Schottky diode is reverse biased, the potential barrier for electrons becomes large; hence there is a Hewlett-Packard
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HSMS-286C HSMS-286E HSMP-2810 HSMS-2862 diode hp 2800 SMD diode hp 2800 smd schottky diode T4 diode hp 2810 HSMS-2810 HSMP-281B HSMS-281C HSMS-281E HSMS-281F HSMS-2820
Abstract: GHz. Hewlett-Packard Schottky barrier diode model 5082-2207 is used. Low impedance shunt transmis sion , difference in energy levels between semiconductor and metal is called a Schottky barrier. P-doped Schottky , changes have on Schottky barrier diodes. Perfor mance improves at lower tem peratures in a predictable , Schottky diode detector is ideal for RF/ID tag applications where it can be used to fabricate a receiver , characteristics of HP Schottky barrier diodes intended for use in video detector or video receiver circuits, and -
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HSMS-2813 5964-3898E sot-23 diode common anode t4 S280A Rf detector HSMS 8202 Diodo b4 HSMS-282F HSMS-286F HSMS-280B HSMS-282B HSMS-285B HSMS-286B
Abstract: Schottky barrier, which prevents more electrons from flowing from the n-type material into the metal , Curves for Silicon Schottky Diodes with High, Medium, Low and â'ZBDâ' Barrier Heights Diffusion , offered: high barrier, medium barrier, low barrier and â'zero bias detector (ZBD)âbarrier. The first , ΦB = barrier height, V Barrier height is a design variable for a Schottky diode, whereas it is , (ZBD)â' detector diode, which has the lowest available barrier height for Si Schottky diodes. This Skyworks Solutions
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DMK2790000 DMK2308-000 APN1014
Abstract: monitor was successfully demonstrated by using the first interconnect metal layer as the top electrode [4, 5]. The metal layer, a Ti/Pt/Au stack, was deposited directly on the AlGaAs passivation ledge to form a metal insulator semiconductor (MIS) capacitor between M1 and the HBT p+ base. In-line , use our standard first metal interconnect, a Ti/Pt/Au stack, to form the InGaP Schottky contact , barrier between the InGaP ledge surface and the top metal contact. The technique is suitable for the Skyworks Solutions
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AlGaAs resistivity
Abstract: the metal and the electron affinity of the semiconductor ier height Schottky (MBR2535CTL) and a high barrier determines the barrier height. Since the work function of height Schottky (MBR2045CT). the metal , AR340 THE LOW FORWARD VOLTAGE SCHOTTKY Prepared by Sam Anderson Motorola, Inc. Phoenix, Arizona , . MOTOROLA Semiconductor Products Inc. The low forward voltage Schottky Sam Anderson Design & , . Schottky Technology Ratings Traditionally the anode to cathode reverse voltage that a semiconductor -
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26129C-2
Abstract: . Schottky Barrier Diode Characteristics Stripped of its package, a Schottky barrier diode chip consists of a metal-semiconductor barrier formed by deposition of a metal layer on a semiconductor. The , equivalent circuit. , METAL PASSIVATION N-TYPE OR P-TYPE EPI IS is a function of diode barrier , diodes. The Height of the Schottky Barrier The current-voltage characteristic of a Schottky barrier , a packaged Schottky diode (see Figure 10) is a complex task. Various techniques are used for each Hewlett-Packard
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HSMS-285A HSMS-286A HSMS-2860 equivalent Hewlett-Packard microwave pin diode zero bias schottky diode detector HSMS285B SC-70 HSMS-285A-TR1 HSMS-285A-BLK HSMS-286A-TR1
Abstract: sensitive detector. This barrier height is lower than that of a low barrier Schottky diode and is , a new family of 0201 silicon flip chip Schottky diodes: the low barrier height SMS7621-096 and , this miniaturization trend: SMS7621-096 Low Barrier Schottky Diode and SMS7630-093 Zero Bias , . The Schottky diode junction is formed by plating a very pure metal onto a wafer that has been doped , -093 (Figures 9 and 10) is a flip chip Schottky diode fabricated with p-type silicon. The type of metal that Skyworks Solutions
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Abstract: layer is added to the bottom of the chip to increase luminous intensity. Outside the reflector metal, a die attach metal layer is added. This die attach layer is composed of metals which act as a barrier , previously, the backside metal layers act as a barrier to prevent tin from migrating into the reflector and , forming a Schottky contact to the n-substrate of the device. During chip fabrication, an 80% Au / 20% Sn , if a "no-clean" flux is used. A 15-minute ultrasonic isopropyl alcohol clean is recommended. In Cree
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flux-eutectic Alpha Metals silicon carbide LED UP78 CPR3AN01
Abstract: levels keep Rv low). M easuring D iod e Param eters Stripped of its package, a Schottky barrier diode chip consists of a metal-semiconductor barrier formed by deposition of a metal layer on a semiconductor , available, Schottky diode detector circuits can be used to create low cost RF and microwave receivers with a , packaged Schottky diode (see Figure 10) is a complex task. Various techniques are used for each element , of a Schottky barrier diode at room temperature is described by the following equation: 0.026 On a -
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100A101MCA50 44M7S 5965-4704E 5965-8838E
Abstract: . A low forward drop Schottky rectifier is therefore used to limit the turn-on of the body diode in the synchronous MOSFET Q2. Low forward drop Vf Schottky diodes use lower barrier heights that result , , Schottky barrier rectifiers, and power ICs is reviewed. The optimization of a new power trench MOSFET , additional module [20,21]. A standard Trench MOSFET core process was used and the additional process module , approach th results in reduced conduction loss and a lower total power loss. III. SCHOTTKY BARRIER -
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DC TO AC CONVERTER trench power wfet Si9174 pwm schematic buck converter power UMOSFET QGD FOM power UMOSFET FOM
Abstract: is presenting a low barrier Schottky diode BAT24-02LS from Infineon Technologies where the Si-die is , Barrier RF Schottky Diode BAT24-02LS If the diode is used in a circuit simulator, the diode is , ) Application Note AN190, V1.0 3 / 15 15-02-2010 Low Barrier RF Schottky Diode BAT24-02LS Mixer for , .6 Low Barrier RF Schottky Diode BAT24 , .9 Circuit for frequency down conversion from 24GHz to 200kHz achieved by the low barrier Schottky Infineon Technologies
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FMCW Radar 77GHz Radar infineon FMCW sensor radar 24ghz diagram radar circuit FMCW circuit
Abstract: layer is added to the bottom of the chip to increase luminous intensity. Outside the reflector metal a die attach metal layer is added. This die attach layer is composed of metals which act as a barrier , previously, the backside metal layers act as a barrier to prevent tin from migrating into the reflector and , user with a basic understanding of Cree's new low temperature attach version XThinTM chips , structured LED chips are approximately 115 microns in height and require a low forward voltage Cree
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CPR3-AN03 pressure low die attach silicon carbide LED cree 0.5um AuSn eutectic bonding wire cree XT290-S CPR3-AN02
Abstract: Schottky Barrier Rectifiers ^ multfcomp Using the schottky barrier principle with a refractory metal capable of high temperature operation metal. The proprietary barrier technology allows for , Full Plastic Dual Schottky Barrier Power Rectifiers I tr Features: Low forward voltage. Low , ://www.newark.com http://www.cpc.co.uk Page < 1 > ^ multfcomp 27/12/10 V1.1 Schottky Barrier Rectifiers ^ 0 ^ , > ^ multîcomp 27/12/10 V1.1 Schottky Barrier Rectifiers ^ 0 ^ muracomp 25 50 75 100 125 Case -
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MBRF20100CT b 1335 mbrf20100 ITQ-220AB MBRF20100C
Abstract: barrier height, even small areas with low Schottky barrier heights will contribute a significant portion , low barrier height metal is not as severe because the Schottky contact is in the blocking mode , to choose a large Schottky barrier height metal like platinum and gold because of such limitations , 0.64 cm2 single chip SiC Schottky diode, a current of 130 A was demonstrated [4] using micropipe-free regions of a wafer. Junction barrier Schottky diodes with commercially attractive current capabilities GeneSiC Semiconductor
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