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"A low barrier Schottky metal was used"

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Abstract: Schottky Barrier Diodes Characteristics A Schottky barrier diode contains a metal-semiconductor barrier formed by deposition of a metal layer on a semiconductor. The resulting non-linear , SCHOTTKY BARRIER DIODE SiO2 SCHOTTKY BARRIER METAL SCHOTTKY BARRIER n-TYPE SILICON n-TYPE , Types of Diode Construction There are several assembly geometries used for Schottky barrier diodes , the hole to make the small area Schottky barrier. Then gold is deposited to provide a larger ... Hewlett-Packard
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4 pages,
51.36 Kb

5082-2303 digital metal detector zero bias schottky diode detector gold detectors circuit Hewlett-Packard transistor microwave HSCH-5300 HSMS-280X HSMS-281X HSMS-282X HSMS-285 HSMS-285X HSMS-286X p-n junction diode doppler radar PN Junction Diode oscillator Metal Detector diode ring mixer in5711 equivalent IN5711 gold metal detectors TEXT
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Abstract: C haracteristics o f Schottky Barrier D iodes A Schottky barrier diode contains a metal-semiconductor barrier formed by deposition of a metal layer on a semiconduc tor. The resulting non-linear diode , onstruction There are several assembly geometries used for Schottky barrier diodes. Three types used in this , techniques are used to open a small hole in the oxide. The appropriate metal is deposited in the hole to make the small area Schottky barrier. Then gold is deposited to provide a larger surface for the ... OCR Scan
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4 pages,
244.4 Kb

Silicon Point Contact Mixer Diodes hsch 3486 zero bias schottky diode HSMS0001 TEXT
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Abstract: W O ñ H EW LETT' 1"KM PACKARD Schottky Barrier Diodes C haracteristics A Schottky barrier diode contains a metal-semiconductor barrier formed by deposition of a metal layer on a , applications. Types o f Diode Construction There are several assembly geometries used for Schottky barrier , oxide. The appropriate metal is depos ited in the hole to make the small area Schottky barrier. Then , "barrier height" is related to the voltage required for a given current. Low voltage corresponds to low ... OCR Scan
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4 pages,
213.49 Kb

Silicon Point Contact Mixer Diodes Microwave zero bias detector diodes IN5711 TEXT
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Abstract: /GaAs processes use a Ti/Pt/Au stack for the first metal interconnect which results in a Schottky diode , . Typically, a lower turn-on Schottky diode can be configured as a planar doped barrier diode detector [2]. , semiconductor for reference. With this work we report on a novel Schottky diode with a lowered barrier , Low Turn-On Voltage Schottky Diode in InGaP/GaAs HBT/BiFET Processes Cristian Cismaru and Peter J , diodes are desired for added design flexibility. In this work we report a novel Schottky diode with a ... Skyworks Solutions
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4 pages,
717.58 Kb

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Abstract: and reduced ruggedness. A low barrier Schottky metal was used. A cross section of the fabricated , lead to extremely high leakage due to the low Schottky barrier metal used in this case. Fig. 2 shows , Schottky Rectifier used as OR-ing diode is the low forward Voltage Drop. At the same time a Max Junction , simulations: 1) In order to reduce the Forward Drop and keep a low leakage, a combination of a low Schottky , experienced by the Schottky Diode in "ORing" applications, were the device is used as a protections device ... International Rectifier
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6 pages,
76.55 Kb

"A low barrier Schottky metal was used" wo-02 40L15CT 65PQ015 80CPT015 trench um 66 ic Trench MOS Schottky Rectifier wo02 feature of ic UM 66 TEXT
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Abstract: height as a function of AC frequency used in the C-V measurements. At low frequency the barrier height , protection nitride away to expose the GaAs surface. A Ti/Pt/Au Schottky contact metal is deposited on the , Schottky contact metal deposition. ( ): After HCl dipping. 0.81 0.95 0.9 0.79 Barrier Height , : hong.shen@skyworksinc.com Telephone: (805) 480-4481 Keywords: GaAs, Schottky diode, dry etch, barrier height, plasma , height measured from a large area Schottky diode, the GaAs surface damage can be characterized in terms ... Skyworks Solutions
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4 pages,
133.2 Kb

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Abstract: frequency range 8 GHz to 12 GHz. Hewlett-Packard Schottky barrier diode model 5082-2207 is used. Low , semiconductor and metal is called a Schottky barrier. P-doped Schottky barrier diodes excel at applications , have on Schottky barrier diodes. Performance improves at lower temperatures in a predictable manner , The Schottky diode is a rectifying metal-semiconductor contact formed between a metal and n-doped , Schottky diode is reverse biased, the potential barrier for electrons becomes large; hence there is a ... Hewlett-Packard
Original
datasheet

10 pages,
165.1 Kb

SCHOTTKY DIODES CROSS REFERENCE smd diode B3 SOT23 A7 diode schottky HSMS-286E Rf detector HSMS 8202 hp 5082 2817 HSMS-286C schottky diode cross reference gold detector circuit free diode hp 5082-2751 Waveform Clipping With Schottky rf detector diode low power TAG 9101 HSMS-2862 diode hp 2810 gold metal detectors HSMP-2810 smd schottky diode T4 diode hp 2800 diode hp 2800 SMD TEXT
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Abstract: GHz. Hewlett-Packard Schottky barrier diode model 5082-2207 is used. Low impedance shunt transmis sion , difference in energy levels between semiconductor and metal is called a Schottky barrier. P-doped Schottky , changes have on Schottky barrier diodes. Perfor mance improves at lower tem peratures in a predictable , Schottky diode detector is ideal for RF/ID tag applications where it can be used to fabricate a receiver , characteristics of HP Schottky barrier diodes intended for use in video detector or video receiver circuits, and ... OCR Scan
datasheet

10 pages,
397.15 Kb

zero bias schottky diode detector 5966-0784E diode hp 2800 SMD Diodo b4 HSMS-2813 HSMS-2862 Rf detector HSMS 8202 S280A sot-23 diode common anode t4 5964-3898E TEXT
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Abstract: Schottky barrier, which prevents more electrons from flowing from the n-type material into the metal , Curves for Silicon Schottky Diodes with High, Medium, Low and “ZBD” Barrier Heights Diffusion , offered: high barrier, medium barrier, low barrier and “zero bias detector (ZBD)” barrier. The first , ΦB = barrier height, V Barrier height is a design variable for a Schottky diode, whereas it is , (ZBD)” detector diode, which has the lowest available barrier height for Si Schottky diodes. This ... Skyworks Solutions
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5 pages,
526.6 Kb

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Abstract: monitor was successfully demonstrated by using the first interconnect metal layer as the top electrode [4, 5]. The metal layer, a Ti/Pt/Au stack, was deposited directly on the AlGaAs passivation ledge to form a metal insulator semiconductor (MIS) capacitor between M1 and the HBT p+ base. In-line , use our standard first metal interconnect, a Ti/Pt/Au stack, to form the InGaP Schottky contact , barrier between the InGaP ledge surface and the top metal contact. The technique is suitable for the ... Skyworks Solutions
Original
datasheet

4 pages,
205.85 Kb

AlGaAs resistivity TEXT
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