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"5SDD 11D2800" Datasheet

Part Manufacturer Description PDF Type
5SDD 11D2800 ABB Semiconductors Original
5SDD11D2800 ABB Semiconductors Rectifier Diode Original
5SDD11D2800 ABB Semiconductors Rectifier Diode Original

"5SDD 11D2800"

Catalog Datasheet MFG & Type PDF Document Tags
Abstract: VRSM = 3000 V IFAVM = 1070 A IFRMS = 1680 A IFSM = VF0 = 0.80 V rF = Rectifier Diode 5SDD 11D2800 0.300 m 14 kA Target specification Doc. No , Part Number 5SDD 11D2800 5SDD 20F2600 5SDD 20F2200 VRRM 2800 V 2600 V 2200 V , reserves the right to change specifications without notice. Tj = 160°C 5SDD 11D2800 On-state , without notice. Doc. No. 5SYA1166-00 Sep. 01 page 2 of 3 5SDD 11D2800 Fig. 1 Outline drawing ABB Semiconductors
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IGCT IGCT abb CH-5600
Abstract: 5SDD 11D2800 5SDD 11D2800 Old part no. DV 827-1100-28 Rectifier Diode Properties Industry , 5SDD 11D2800 Conditions: 2 800 V Tj = -40 ÷ 160 °C, half sine waveform, f = 50 Hz Mechanical , .: +420 261 306 250, http://www.abb.com/semiconductors 1 of 6 TS - D/060/02c Aug-11 5SDD 11D2800 , time without notice TS - D/060/02c Aug-11 2 of 6 5SDD 11D2800 Thermal Parameters Rthjc , herein at any time without notice TS - D/060/02c Aug-11 3 of 6 5SDD 11D2800 IF ( A ) 9000 T ABB Automation
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D/060/02
Abstract: Rectifier Diode V A A A V m 5SDD 11D2800 Doc. No. 5SYA1166-00 Okt. 03 · Very low on-state , reserves the right to change specifications without notice. max Unit mm mm 5SDD 11D2800 , 2 of 6 5SDD 11D2800 ABB Switzerland Ltd, Semiconductors reserves the right to change , ) IF ( A ) 5SDD 11D2800 20 2 5000 160 °C 15 4000 3000 10 1,5 1 2000 5 , specifications without notice. Doc. No. 5SYA1166-00 Okt. 03 page 4 of 6 5SDD 11D2800 170 TC ( °C ABB Switzerland
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Abstract: Rectifier Diode V A A A V m 5SDD 11D2800 Doc. No. 5SYA1166-00 Okt. 03 · Very low on-state , change specifications without notice. Unit kg 26.5 mm mm mm 5SDD 11D2800 On-state , notice. Doc. No. 5SYA1166-00 Okt. 03 page 2 of 6 5SDD 11D2800 Thermal Maximum rated values , ( kA ) IF ( A ) 5SDD 11D2800 20 2 5000 160 °C 15 4000 3000 10 1,5 1 , change specifications without notice. Doc. No. 5SYA1166-00 Okt. 03 page 4 of 6 5SDD 11D2800 170 ABB Switzerland
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Abstract: Rectifier Diode 5SDD 11D2800 Doc. No. 5SYA1166-00 Jan. 03 · Very low on-state losses · Optimum power , . 5SDD 11D2800 On-state Maximum rated values 1) Parameter Max. average on-state current Max , specifications without notice. Doc. No. 5SYA1166-00 Jan. 03 page 2 of 5 n 5SDD 11D2800 9000 25 °C 160 °C , without notice. Doc. No. 5SYA1166-00 Jan. 03 page 3 of 5 5SDD 11D2800 TC ( °C ) TC ( °C ) 170 160 , . No. 5SYA1166-00 Jan. 03 page 4 of 5 5SDD 11D2800 Fig. 10 Outline drawing. All dimensions are ABB Switzerland
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Abstract: 0.80 V rF = 0.050 m Rectifier Diode 5SDD 60Q2800 Doc. No. 5SYA1161-01 Nov.00 · , Blocking Part Number 5SDD 60Q2800 5SDD 60Q2600 5SDD 60Q2200 Conditions VRRM 2000 V , Semiconductors AG reserves the right to change specifications without notice. VRRM Tj = 160°C 5SDD 60Q2800 , notice. 2 of 4 Doc. No. 5SYA1161-01 Nov.00 Fig 2. On-state characteristics. 5SDD 60Q2800 5SDD 60Q2800 5SDD 60Q2800 Fig. 3 On-state characteristics. Pf (W) Tcase (°C) 165 ABB Semiconductors
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5SDD If 8000 5SDD If 8000 Vrrm 8000 ABB VS 4000
Abstract: = 0.74 V rF = 0.026 m Rectifier Diode 5SDD 71B0200 Doc. No. 5SYA1132-02 Oct , Semiconductors AG reserves the right to change specifications without notice. VR = VRRM 5SDD 71B0200 , 0.00013 5SDD 71B0200 i 6 2 0 10-3 10-2 10-1 t [s] 10 0 FM = 20. 24 kN , of 4 Doc. No. 5SYA1132-02 Oct.00 5SDD 71B0200 On-state characteristics Surge current characteristics IF [A] IFSM [kA] 20000 100 Tj = 170°C 18000 ò i2dt [MA2s] 5SDD 71B0200 22 ABB Semiconductors
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Abstract: 5SDD 70H2000 5SDD 70H2000 Old part no. DV 889-7000-20 Rectifier Diode Properties § § § § , Types VRRM 5SDD 70H2000 5SDD 70H1800 Conditions: 2 000 V 1 800 V Tj = 0 ÷ 190 °C, half sine , -10 1 of 5 5SDD 70H2000 Maximum Ratings VRRM Repetitive peak reverse voltage Tj = 0 ÷ 190 °C Maximum Limits 5SDD 70H2000 5SDD 70H1800 2 000 1 800 7 030 11 042 120 tp = 8.3 ms tp = 10 ms tp = 8.3 ms , Jul-10 2 of 5 5SDD 70H2000 Thermal Parameters Rthjc Thermal resistance junction to case double ABB Automation
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70H20 DV/099/03
Abstract: 5SDD 36K5000 5SDD 36K5000 Old part no. DV 889B-3600-50 Rectifier Diode Properties § § § § § , 0.136 rT V A A V m Types VRRM 5SDD 36K5000 5SDD 36K4800 Conditions: 5 000 V 4 800 V Tj = -40 , TS-DV/211/06 Jul-10 1 of 5 5SDD 36K5000 Maximum Ratings VRRM Repetitive peak reverse voltage Tj = -40 ÷ 160 °C Maximum Limits 5SDD 36K5000 5SDD 36K4800 5 000 4 800 3 638 5 715 110 tp = 8.3 , 5 5SDD 36K5000 Thermal Parameters Rthjc Thermal resistance junction to case double side ABB Automation
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Abstract: 5SDD 14F6000 5SDD 14F6000 Old part no. DV 808-1360-60 High Voltage Diode Properties § § § § , 0.407 rT V A A V m Types VRRM 5SDD 14F6000 5SDD 14F5800 Conditions: 6 000 V 5 800 V Tj = -40 , /semiconductors TS - DV/051/01 Jul-10 1 of 5 5SDD 14F6000 Maximum Ratings VRRM Repetitive peak reverse voltage Tj = -40 ÷ 150 °C Maximum Limits 5SDD 14F6000 5SDD 14F5800 6 000 5 800 1 363 2 142 75 , without notice TS - DV/051/01 Jul-10 2 of 5 5SDD 14F6000 Thermal Parameters Rthjc Thermal ABB Automation
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Abstract: 5SDD 39K4000 5SDD 39K4000 Old part no. DV 889B-3900-40 Rectifier Diode Properties § § § § § , 0.109 rT V A A V m Types VRRM 5SDD 39K4000 5SDD 39K3800 Conditions: 4 000 V 3 800 V Tj = -40 , TS-DV/243/07 Jul-10 1 of 5 5SDD 39K4000 Maximum Ratings VRRM Repetitive peak reverse voltage Tj = -40 ÷ 160 °C Maximum Limits 5SDD 39K4000 5SDD 39K3800 4 000 3 800 3 941 6 190 100 tp = 8.3 , 5 5SDD 39K4000 Thermal Parameters Rthjc Thermal resistance junction to case double side ABB Automation
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5sdd 39K4000
Abstract: 5SDD 20F5000 23500 A VF0 Rectifier Diode 0.282 m Doc. No. 5SYA1162-01 Jan. 01 · Very low on-state losses · Optimum power handling capability Blocking Part Number 5SDD 20F5000 5SDD 20F4800 5SDD 20F4400 Conditions VRRM 5000 V 4800 V 4400 V f = 50 Hz, tp = , change specifications without notice. VRRM Tj = 160°C 5SDD 20F5000 On-state IFAVM Max , notice. Doc. No. 5SYA1162-01 Jan. 01 page 2 of 4 5SDD 20F5000 IF [A] IF [A] 4000 10000 ABB Semiconductors
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Abstract: = 0.74 V rF = 0.026 m Rectifier Diode 5SDD 71X0400 Doc. No. 5SYA1158-01 Oct , reserves the right to change specifications without notice. VR = VRRM 5SDD 71X0400 On-state , 10 R i (1 - e - t / i ) i =1 8 i 5SDD 71X0400 2 10-2 10-1 t [s] 10 , Oct.00 5SDD 71X0400 On-state characteristics Surge current characteristics IF [A] IFSM [kA] 20000 i2 dt [MA 2s] 5SDD 71X0400 100 18000 22 Tj = 170°C Tj = 170°C 90 ABB Semiconductors
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40170 5SDD Vrrm 10000 If 10000
Abstract: = 0.74 V rF = 0.026 m Rectifier Diode 5SDD 71X0400 Doc. No. 5SYA1158-01 July 06 , . 5SDD 71X0400 On-state 7110 A IFAVM Max. average on-state current IFRMS Max. RMS , 0.0034 0.00013 5SDD 71X0400 8 2 0 10-3 10-2 10-1 t [s] 10 FM = 20. 24 kN , specifications without notice. page 2 of 4 Doc. No. 5SYA1158-01 July 06 5SDD 71X0400 On-state characteristics Surge current characteristics IF [A] IFSM [kA] 20000 i2dt [MA2s] 5SDD 71X0400 ABB Switzerland
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Abstract: = 0.74 V rF = 0.026 m Rectifier Diode 5SDD 71X0400 Doc. No. 5SYA1158-01 Oct , Semiconductors AG reserves the right to change specifications without notice. VR = VRRM 5SDD 71X0400 , ) 5.28 3.30 0.87 0.55 4 i (s) 0.07 0.039 0.0034 0.00013 5SDD 71X0400 8 , Oct.00 5SDD 71X0400 On-state characteristics Surge current characteristics IF [A] IFSM [kA] 20000 100 18000 ò i2dt [MA2s] 5SDD 71X0400 22 Tj = 170°C Tj = 170°C 90 ABB Semiconductors
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DIODE ED 16
Abstract: = 0.74 V rF = 0.026 m Rectifier Diode 5SDD 71X0200 Doc. No. 5SYA1156-01 Oct , Semiconductors AG reserves the right to change specifications without notice. VR = VRRM 5SDD 71X0200 , 0.0034 0.00013 5SDD 71X0200 8 2 0 10-3 10-2 10-1 t [s] FM = 20. 24 kN , . page 2 of 4 Doc. No. 5SYA1156-01 Oct.00 5SDD 71X0200 On-state characteristics Surge current characteristics IF [A] IFSM [kA] 20000 100 18000 ò i2dt [MA2s] 5SDD 71X0200 ABB Semiconductors
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Abstract: = 0.74 V rF = 0.026 m Rectifier Diode 5SDD 71B0200 Doc. No. 5SYA1132-02 July 06 , . 5SDD 71B0200 On-state 7110 A IFAVM Max. average on-state current IFRMS Max. RMS , 0.87 0.55 i (s) 0.07 0.039 0.0034 0.00013 5SDD 71B0200 4 2 0 10-3 , July 06 5SDD 71B0200 On-state characteristics Surge current characteristics IF [A] IFSM [kA] 20000 i2dt [MA2s] 5SDD 71B0200 100 22 Tj = 170°C 18000 Tj = 170°C 90 ABB Switzerland
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Abstract: 5SDD 38F2000 5SDD 38F2000 Old part no. DV 818-3800-20 Rectifier Diode Properties § § § § , Types VRRM 5SDD 38F2000 5SDD 38F1800 Conditions: 2 000 V 1 800 V Tj = 0 ÷ 190 °C, half sine , -10 1 of 5 5SDD 38F2000 Maximum Ratings VRRM Repetitive peak reverse voltage Tj = 0 ÷ 190 °C Maximum Limits 5SDD 38F2000 5SDD 38F1800 2 000 1 800 3 730 5 859 60 tp = 8.3 ms tp = 10 ms tp = 8.3 ms tp , change the data contained herein at any time without notice TS - DV/158/05 Jul-10 2 of 5 5SDD ABB Automation
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Abstract: 5SDD 31H6000 5SDD 31H6000 Old part no. DV 889-3300-60 High Voltage Diode Properties Industry , Rectifier bridges Types VRRM 5SDD 31H6000 Conditions: 6 000 V Tj = -40 ÷ 150 °C, half sine waveform , of 5 5SDD 31H6000 Maximum Ratings VRRM IFAVm IFRMS IRRM IFSM I2t Repetitive peak reverse , time without notice TS - DV/259/08b Aug-11 2 of 5 5SDD 31H6000 Thermal Parameters Rthjc Thermal , the data contained herein at any time without notice TS - DV/259/08b Aug-11 3 of 5 5SDD 31H6000 ABB Automation
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DV/259/08
Abstract: 0.082 mi2 Rectifier Diode 5SDD 51L2800 Doc. No. 5SYA 1103-01 Jan.95 Features â'¢ Patented , Blocking Part number 5SDD 51L2800 5SDD 51L2600 5SDD 51L2200 Conditions Vrrm 2000 V 1850 V 1600 V f = , AG Ml»» ABB Semiconductors AG 5SDD 51L2800 On-state 'favm Max. average on-state current 5150 A , . 2 of 4 Doc. No. 5SYA 1103-01 Jan.95 ABB Semiconductors AG 5SDD 51L2800 lF (A) 10000 8000- 7000 , average on-state current. Doc. No. 5SYA 1103-01 Jan.95 3 Of 4 ABB Semiconductors AG 5SDD 51L2800 Fig -
OCR Scan
k 175 parameters 0-106A2 5SYA1103
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