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LT3845AMPFE#PBF Linear Technology LT3845A - High Voltage Synchronous Current Mode Step-Down Controller with Adjustable Operating Frequency; Package: TSSOP; Pins: 16; Temperature Range: -55°C to 125°C
LT8705AMPFE#PBF Linear Technology LT8705A - 80V VIN and VOUT Synchronous 4-Switch Buck- Boost DC/DC Controller; Package: TSSOP; Pins: 38; Temperature Range: -55°C to 125°C
LT8705AMPFE#TRPBF Linear Technology LT8705A - 80V VIN and VOUT Synchronous 4-Switch Buck- Boost DC/DC Controller; Package: TSSOP; Pins: 38; Temperature Range: -55°C to 125°C
LT3845AMPFE#TRPBF Linear Technology LT3845A - High Voltage Synchronous Current Mode Step-Down Controller with Adjustable Operating Frequency; Package: TSSOP; Pins: 16; Temperature Range: -55°C to 125°C
TLV2775AMPWREP Texas Instruments QUAD OP-AMP, PDSO16, TSSOP-16

"5 amp" FET

Catalog Datasheet MFG & Type PDF Document Tags
Abstract: CD-ROM X13769XJ2V0CD00 11-14 RF and Microwave Devices Discrete s Dual Gate MES/MOS FET · Dual Gate MES FET Part Number 3SK177 (NE25139) 3SK206 (NE25339) 3SK299 (NE25118) Applications TV/VCR Tuner , · Dual Gate MOS FET Part Number 3SK131 (NE92939) 3SK134B (NE92739) 3SK135A 3SK176A 3SK222 (NE92039 , X13769XJ2V0CD00 11-18 RF and Microwave Devices Discrete s Low Noise GaAs/HJ FET (NE) (1/2) Supply , NE32900 NE34018 NE38018 NE72118 Applications General Purpose GaAs FET General Purpose GaAs FET General NEC
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nf025 NE27283 upc27 NE42484 x-band power transistor 100W nf025db 950MH 500MH PC8119T PC8120T PC8130TA PC8131TA
Abstract: Cathode SFF120G SFF220G SFF320G SFF420G SFF130G SFF230G SFF330G SFF430G SFF9130G SFF9230G N-Channel FET, 100 Volts N-Channel FET, 200 Volts N-Channel FET, 400 Volts N-Channel FET, 500 Volts N-Channel FET, 100 Volts N-Channel FET, 200 Volts N-Channe) FET, 400 Volts N-Channel FET, 500 Volts P-Channel FET, 100 Volts P-Channel FET, 200 Volts UUTRAFAST RECTIFIERS SPD620G SDR625G SDR627G 20R4G I 10 Amp -
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SPD620CTG SFT6191G 10 amp npn darlington power transistors 150 amp transistors NPN 200 VOLTS POWER TRANSISTOR transistor military 10 amp npn power transistors transistor 5 Amp 700 volt 1045G SSR1645G SSR2G40G SSR2045CTG SDR62
Abstract: Cascaded FET, 2-stage limiting amp. 5.0V 2.7mA 22dB 2dBm 40dB Iso. 850MHz x x x x High isolation; DC. 4pin SOP/ SOT-143 Cascaded FET, 2-stage limiting amp. 5.0V , =32.4dBm; POI=23dBm; GLIN=12.3dB. KGF1283 SOT-89 Plastic power driver FET, 26dBm@1GHz 5.8V 70mA 15dB 25dBm 850MHz KGF1284 SOT-89 Plastic power driver FET, 21.5dBm@1.9GHz 3.4V 70mA 10dB 21.5dBm 1.9GHz KGF1305T Cer Pwr FET w/H.S. Ceramic power FET for -
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KGF1155B KGF1156 KGF1165 KGF1175B 38mm2 NF 935 FET 8PIN fet dual gate sot143 GaAs FET sot89 P01 SOT-89 850MH KGF1181B
Abstract: ±18 601 MLF155A FET Input Op Amp 50 pA 2 3 10 pA 50 K 1 5 ± 5 ±22 601 MLF155 FET Input Op Amp 100 p A 5 5 20 pA 50 K 1 5 ± 5 ±22 601 MLF156A FET Input Op Amp 50 pA 2 3 10 pA 50 K 2 15 ± 5 ±22 601 MLF156 FET Input Op Amp 50 p A 5 5 20 pA 50 K 2 15 ± 5 ±22 601 MLF157A Wideband FIET Input 50 pA 2 3 10 pA 50 K 3 75 ± 5 ±22 601 Op Amp MLF157 Wideband FET Input 100 p A 5 5 20 pA 50 K 3 , Purpose Op Amp Unity Gain Op Amp FET Input Op Amp FET Input Op Amp FET Input Op Amp FET Input Op Amp -
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MC1536 MC1556 MC1741 MC1741S MC1741N MC3572 op amp differential MLM107 MC3476 MC1741NC MC1456
Abstract: ±18 601 MLF155A FET Input Op Amp 50 pA 2 3 10 pA 50 K 1 5 ± 5 ±22 601 MLF155 FET Input Op Amp 100 p A 5 5 20 pA 50 K 1 5 ± 5 ±22 601 MLF156A FET Input Op Amp 50 pA 2 3 10 pA 50 K 2 15 ± 5 ±22 601 MLF156 FET Input Op Amp 50 p A 5 5 20 pA 50 K 2 15 ± 5 ±22 601 MLF157A Wideband FIET Input 50 pA 2 3 10 pA 50 K 3 75 ± 5 ±22 601 Op Amp MLF157 Wideband FET Input 100 p A 5 5 20 pA 50 K 3 , Purpose Op Amp Unity Gain Op Amp FET Input Op Amp FET Input Op Amp FET Input Op Amp FET Input Op Amp -
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MLM110 MC1510 733 op amp MC1553 MLF356 MLF357 MC1510/MC1410 MC1552/MC1553 MC1552 MC1733C
Abstract: Super-Mini FET (SOT-23MOD, SOT-143MOD) Electrical Characteristics (Ta=25"C) Type No. 2SK208 2SK209 2SK210 2SK211 2SK302 2SK368 2SK1062 ·2SK1771 2SK1826 2SK182S 2SK2033 2SK2036 2SK2009 2SK711 2SJ106 2SJ168 , - - - - MOS FET MOS FET MOSFET MOS FET MOSFET MOSFET MOS FET MOS FET MOS FET MOSFET F5/F6 Remarks MOS FET MOS FET MOS FET MOS FET MOS FET MOSFET MOS FET MOSFET MOS FET MOS FET MOS FET MOS FET MOS FET MOSFET GaAs MES FET GaAs MES FET *: 4-read (SOT-143 MOD) Cell Pack Icc Type No. TA4000F -
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200 Amp mosfet 2SK241 Equivalent FET k 2545 MOSFET 2SK117 equivalent 3sk fet 2SK192A equivalent 2SJ343 2SJ345 2SJ305 3SK126 3SK127 3SK151
Abstract: mesfet 3SK121 FET "" GaAs 050106DAD1 © TOSHIBA CORPORATION 2005 All Rights Reserved 2005 FET FET ICLSILSIASIC , . 87 3MOS FET. 91 MOS FETAGC , ] . 173 . FET , 1.1 USM UHF MIX/OSC UHF OSC PIF AMP #: GaAs HBT 23 [ 3 ] 2. TV FET Toshiba
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FET K161 Transistor C2216 Transistor k161 k192a k161 jfet Transistor C2668 2SC382TM 2SC2114 2SK2497 2SC384 2SC1923 2SC2115
Abstract: 1.8 3 3 PG (dB) 9 Measuring Condition Idd Circuit Construction f(MHz) 100 - 2000 FET one-stage amp. (with band control pin) 100 -1 5 0 0 FET two-stage amp. (with band control pin) 50 -8 0 0 50 -8 0 0 50 FET one-stage amp. low distortion characteristics (IM2) FET one-stage amp. low distortion characteristics (IM2) FET one-stage amp. Package No. Mini Type (4 pins) SO-IOA Cross Pack Mini Type (4 pins , 12 3 Vds 3 8 8 19 10 10 19 18 18 100 -1 5 0 0 FET two-stage amp. (Bias resistor built-in -
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GN1041 GN1021 gn1015 GN101 GN1010 GN1015 GN1044 GN1022
Abstract: . Tuning AGC Bt-Tr MINI SM I TO-92 j RF Amp. J- FET MINI SM Tuning Varicap MINI 1SV102 1 SV149 FM , DISCRETE DEVICES FOR FM TUNER Dust Gate M O S FET SM Q 3SK126 U SQ Single Gate M O S FET MINI SM 2SK302 SMQ 2SKÎ771 J- F E T MINI USM 2SK881 2SK882 USM Dual Gate M O S FET SM Q 3SK126 3SK151 3SK260 , 2SC4246 2SC3121 2SC4247 2SC3547A 2SC4248 2SC3547B (Wide Band) (Wide Band) Dual Gate FET VHF and Wide , SSM 1*1 SS364 Dual Gate FET VHF SMQ 3SK126 3SK160 3SK153 3SK195 3SK225 3SK226 UHF" " USQ #3SK240 -
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2SC491 4007F SK192A SV153A Sv153 varicap diode 1SV226 Am tuning varicap 2SC2670 2SC2715 2SC2716 1SV128 1SV271 1SV172
Abstract: MITSUBISHI SEMICONDUCTOR APPLICATION NOTE RECOMMENDED LINE-UP (FOR LOW NOISE DEVICES , '" 1.2dB MGF4918E â'¢ NF MITSUBISHI SEMICONDUCTOR APPLICATION NOTE RECOMMENDED LINE-UP (FOR , MGFC36V4450A MGFC42V4450 MITSUBISHI SEMICONDUCTOR APPLICATION NOTE RECOMMENDED LINE-UP (FOR POWER , MGF2407A MGF2430A MGFC36V5964A MGFC42V5964 L>.->->-[> >- - 42dBm MITSUBISHI SEMICONDUCTOR , MITSUBISHI SEMICONDUCTOR APPLICATION NOTE RECOMMENDED LINE-UP (FOR POWER DEVICES) 7.7 ~ 8.5GHz -
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MGF4714AP MGF4914D MGF1923 MGF1402B MGF4919 MGF2430 7.1 power amplifier circuit diagram MGF4919E MGF4914E MGF49T4D
Abstract: : Transistor, LI: Linear, FET: M OSFET, M PR: M icroprocessor Peripherals, T&R: Tape & Reel * See Supplem ent 1 , 142 142 * * * * 147 POWER MOSFETS PART NO. IRF510 IRF511 IRF512 IRF513 DESCRIPTION FET, 100V, 0.54R, 5.6A, 43W, N-CH, T0-220 USE IRF510 USE IRF510 USE IRF510 IRF520 IRF521 IRF522 IRF523 FET , FET, 100V, 0.16R, 14A, 77W, N-CH, TO-220 USE IRF530 USE IRF530 USE IRF530 IRF540 IRF541 IRF542 IRF543 FET, 100V, 0.077R, 28A, 125W, N-CH, T0-220 USE IRF540 USE IRF540 USE IRF540 IRF610 IRF611 -
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IRFZ43 IFRZ44 KA3842D irf510 switch TRANSISTOR MC7805CT LM386DT 2N3904 2N3906 2N4400 2N4401 2N4402 2N4403
Abstract: FIELD EFFECT TRANSISTORS (FET) Polarity and Material Description and Application Case , Gen Purp AF Amp Switch T 0 106 29b 25 6 0 .5 -1 5 221 Dual Gate M O S FET N -C , 15000 400 222 Dual Gate M O S FET N -C H V H F Amp/Mix, N F 6dB Max at 200M H z Gate , Dual Gate M O S FET N -C H UHF/VHF Preamp, NF 4.5dB at 200MHz Gate Protected T072 31 d 25 (DSX) 5 6 -3 0 3.3 Typ 0.03 15000 360 455 Dual Gate M O S FET N -C H -
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T0106 QQ03S4
Abstract: 2005 All Rights Reserved 2005 FET ICLSILSIASIC 2005 1 , 2SC2782A 36 220 20 80 12.5 175 18 175 MHz 2. MOS FET (TC = 25 , 3SK294 VHF (wide band) RF Amp Dual Gate FET SMQ 3SK199 3SK207 3SK232 3SK291 USQ 3SK256 3SK249 3SK293 USQ 3SK260 3SK259 UHF VHF and Wide Band VHF Dual Gate FET S-MINI USC , 0 re rbb' T 1.2 1.3 43 [5] 1.1.3 FET FET 2 FET () MOS Toshiba
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3SK78 S-AV24 TOSHIBA RF Power Module S-AV24 S-AU82VL diode varicap BB 112 2sc5066 2SK2856 2SC385 2SC2349 2SC2328 2SK3276 2SC385A
Abstract: RFA120 Raytheon RFA120 Linear FET Macrocell Array General Features â  â  â  â  â  8 FET macrocells 4 bipolar macrocells Dual-layer metallization for high integration density 32V , FET Macrocell Features â  â  â  â  â  â  4 JFET transistors per FET macrocell 30 pA , configurable to FET input bipolar comparators, op amps, analog switches, multiplexers Bipolar Macrocell , Linear FET Array (RFA120) is a mixed bipolar and FET-based Application Specific Integrated Circuit -
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LP365 LM124 RC4558
Abstract: 93 93 96 96 100 100 98 98 102 102 104 104 TR : Transistor, L I : Linear, FET : MOSFET, MPR , IRF624 IRF625 IRF630 IRF631 IRF632 IRF633 IRF640 IRF641 IRF642 IRF643 DESCRIPTION FET, 60V, 5R, 0.2A, 0.4W, N-CH, TO-92 FET, 100V, 0.54R, 5.6A, 43W, N-CH, TO-220 USE IRF510 USE IRF510 USE IRF510 FET, 100V, 0.27R, 9.2A, 60W, N-CH, TO-220 USE IRF520 USE IRF520 USE IRF520 FET, 100V, 0.15R, 14A, 77W, N-CH, T0-220 USE IRF530 USE IRF530 USE IRF530 FET, 100V, 0.077R, 28A, 125W, N-CH, TO-220 USE IRF540 USE IRF540 USE -
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KSH117-1 IRF9210 darlington NPN 600V 8a transistor transistor IRF9640 fet 10a 600v NPN Transistor 600V darlington NPN 600V 12a transistor 2N5087 2N5088 2N5551 2N6515 KSP06 KSP10
Abstract: 1.24 V ± 1 % 1.5 MHz ( ) 0 uA P MOS FET 24 SSOP (FPT-24P-M03) MB39A104 , -24P-M03) 2 MB39A104 I/O 1 VCCO ( VCC ) 2 VH O FET (VH = VCC - 5 V) 3 OUT1 O P MOS FET 4 VS1 I 5 ILIM1 I (RT = 24 k , OUT2 O P MOS FET 23 GNDO GND 24 CTL I CTL "" IC 3 , IOP 5 % (t = 1/fOSC× ) -450 +450 mA fOSC FET * 100 500 -
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fet toshiba 20SVP10M TPC8102 RB0530L-30 CDRH104R-150 C1608CH1H101J DS04-27231-2Z MB39A104PFV F24018S- F0301
Abstract: FET (2-inputs); low noise, self-b ias small signal m ixer amp KGF1156 Dual-gate FET (2 , /front-end gain block, sm all signal/wide-band amp KGF1175B Dual-gate FET (1-input); self-b ias sm all , FET; sm all signal, low -noise buffer amp for cellular, spread spectrum and personal com m unications system s < 5.0 mA > -4.5 1 .0 - 2 .5 GHz < 1 .3 dB >11 KGF1531 Dual-gate FET (2 , ) 1.0 GHz Noise Figure (Nf) < 2 .5 dB Gain (dB) >20 KGF1254B W ide-gate width FET; self-b -
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S0T143 F1283 F1313 F-1203 kgf1323 S0T143I KGF1145 KGF1146 KGF1322S KGF1313
Abstract: Regulator DC/DC controller: FET direct driver (Pch driver:7ch, Nch driver:1ch) Series Regulator: Variable , FET Driver ON Resistance Current Ability Control STB Threshold Voltage STB Input Current STB5,6 , (CH9) FET Driver Output (CH9) FET Driver Output (CH8) Power supply for the output circuit (CH6,7,8,9) Power Ground for the output circuit (CH6,7,8,9) FET Driver Output (CH7) FET Driver Output (CH6) FET Driver Output (CH5) FET Driver Output (CH4) Power supply for the output circuit (CH2,3,4,5) Power Ground ROHM
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VQFP48C VIN2345 VIN6789 25VCC R1120A
Abstract: 15 15 min TO-3PL T48-2 ECG2900 ECG2901 See FET Selector Guide Page 1 -65 - - â'" â'" â'" ECG2920 thru 2924 See FET Selector Guide Page 1 -65 - - â'" ECG2940 thru 2947 See FET Selector Guide Page 1 -65 - - â'" â'" â'" ECG2980 thru 2981 See FET Selector Guide Page 1 -65 - - â'" â'" â'" â'ž ECG2984 thru 2987 See FET Selector Guide Page 1 -65 â'" - â'" â'" â'ž ECG3300 thru 3304 -
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ECG2582 ECG2583 ECG2584 ECG2585 ECG2586 ECG2588 amp 2100 ECG2594 IGBT Guide FET Transistor Guide ECG2590 T0-220J T41-1 T0-220S
Abstract: ( ) 0 uA N MOS FET TSSOP-8P ( 1.1 mm) 8 TSSOP (FPT-8P-M05) MB39A105 , SCPOD O "High-Z" " " 5 OUT O N FET 6 GND 7 RT , (3) PWM (PWM Comp.) PWM - / DTC (4) (Drive) N MOS FET 10 MB39A105 2. RT 7 , CSCP ( 2) ( 0.8 V) DC/DC 0.9 V CSCP 1.0 V FET 100 % CSCP " " VCC ( 3) 1.1 V ( ) (2) (UVLO) IC FET 100% CSCP 2 "" (3) P MOS FET SCPOD 4 P MOS FET -
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TEPSLA21A475M8R TEPSL SBS004 RR0816P-752-D NEC Tokin 039 MCH3405 DS04-27233-2Z MB39A105PFT F08013S F0306
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