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"3fv 60"

Catalog Datasheet MFG & Type PDF Document Tags
Abstract: No. Marking - Y KDZ4.3FV 4F 4P 7P KDZ4.7FV 5F 8F YF KDZ5.1FV *KDZ2.7FV CF ZF *KDZ3.0FV VF *KDZ3.3FV Type No. Marking - Y KDZ9.1FV EF , 0.5 0.5 5.0 23 5 120 0.5 0.5 6.0 20 5 120 0.5 0.5 6.5 18 , . 10.21 KDZ2.0FV KDZ2.2FV KDZ2.4FV KDZ2.7FV KDZ3.0FV KDZ3.3FV KDZ3.6FV KDZ3.9FV KDZ4.3FV KDZ4.7FV KDZ5.1FV KDZ5.6FV KDZ6.2FV KDZ6.8FV KDZ7.5FV KDZ8.2FV KDZ9 KEC
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KDZ10FV KDZ20FV KDZ22FV KDZ30FV 3fv 60 4FV diode 2FV 60 diode diode 3FV 60 mark 2fv diode KDZ9.1FV KDZ11FV KDZ24FV KDZ12FV
Abstract: DF3A3.3FV TOSHIBA Diodes for Protecting against ESD DF3A3.3FV Product for Use Only as Protection against Electrostatic Discharge (ESD). 0.22±0.05 0.8±0.05 0.32±0.05 3 0.13±0.05 *This product is for protection against electrostatic discharge (ESD) only and is not intended for any other usage , DF3A3.3FV IZ - VZ 100 Ta=25°C ZENER CURRENT IZ (mA) 10 1 0 0.1 0.01 0 0 0.001 0 1 2 3 4 5 6 7 8 ZENER , REVERSE VOLTAGE VR (V) 2 2007-08-20 DF3A3.3FV RESTRICTIONS ON PRODUCT USE · The information Toshiba
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3FV DIODE IEC61000-4-2
Abstract: .4FV *KDZ2.7FV *KDZ3.0FV *KDZ3.3FV *KDZ3.6FV *KDZ3.9FV *Under development Marking 1F 7F 8F CF VF WF 2F 3F Y 1P 7P YF ZF YP ZP 2P 3P Type No. KDZ4.3FV KDZ4.7FV KDZ5.1FV KDZ5.6FV KDZ6.2FV KDZ6 , KDZ2.7FV Y KDZ3.0FV Y KDZ3.3FV Y KDZ3.6FV Y KDZ3.9FV Y KDZ4.3FV Y KDZ4.7FV Y KDZ5.1FV Y KDZ5.6FV Y KDZ6 , 7.00 6.93 7.90 5 23 5 120 0.5 0.5 6.0 6.06 6.40 6.33 7.20 5 25 5 150 0.5 0.5 5.0 5.49 5.80 5.73 6.60 5 KEC
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marking 4F 9p marking jf 1040 KDZ13FV KDZ15FV KDZ16FV KDZ18FV KDZ27FV KDZ33FV
Abstract: DF3A3.3FV DF3A3.3FV ESD : mm 0.22±0.05 () P ( 1) 150 Tj 150 Tstg -55~150 °C 0.32±0.05 °C 3 mW 2 (//) (/ ) ( ) ( ) ( 1):FR4 (25.4 mm × 25.4 mm × 1.6 mmt) 0.13±0.05 1 0.5±0.05 0.8±0.05 0.4 , (TOP VIEW) 3.3 ESD ESD IEC61000-4-2 ( ) ±30kV : 1 2007-11-01 DF3A3.3FV , 3 4 5 VR (V) VZ (V) 2 2007-11-01 DF3A3.3FV · · · -
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DF3A3.3FV
Abstract: DF3A3.3FV TOSHIBA Diodes for Protecting against ESD Epitaxial Planar Type DF3A3.3FV Diodes for Protecting against ESD 0.32±0.05 1.2±0.05 0.8±0.05 Rating P* 150 mW Junction temperature Tj 150 °C Tstg -55 ~ 150 °C 3 Unit Power dissipation 2 Storage , Equivalent Circuit (top view) 3.3 1 2004-06-25 DF3A3.3FV CT - VR IZ - VZ 100 1000 TOTAL , 5 REVERSE VOLTAGE VR (V) 2 2004-06-25 DF3A3.3FV RESTRICTIONS ON PRODUCT USE Toshiba
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marking 3fv
Abstract: DF3A3.3FV TOSHIBA Diodes for Protecting against ESD Epitaxial Planar Type DF3A3.3FV Diodes for Protecting against ESD 0.32±0.05 1.2±0.05 0.8±0.05 Rating P* 150 mW Junction temperature Tj 150 °C Tstg â'55 ~ 150 °C 3 Unit Power dissipation 2 , 2004-06-25 DF3A3.3FV CT - VR IZ - VZ 100 1000 TOTAL CAPACITANCE CT (pF) ZENER CURRENT IZ (mA , ) 2 2004-06-25 DF3A3.3FV RESTRICTIONS ON PRODUCT USE 030619EAA â'¢ The information Toshiba
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Abstract: DF3A3.3FV TOSHIBA Diodes For Protecting Against ESD Epitaxial Planar Type DF3A3.3FV Diodes for Protecting Against ESD Storage temperature range mW 150 °C Tstg â'55 ~ 150 0.32±0.05 3 0.13±0.05 150 2 Unit Tj Junction temperature Rating P* Power , destruction Marking Equivalent Circuit (top view) 3.3 1 2004-03-11 DF3A3.3FV CT - VR IZ , (V) 9 10 0 1 2 3 4 5 REVERSE VOLTAGE VR (V) 2 2004-03-11 DF3A3.3FV Toshiba
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Abstract: DF3A3.3FV TOSHIBA Diodes for Protecting against ESD DF3A3.3FV Product for Use Only as Protection against Electrostatic Discharge (ESD) Characteristics Symbol Rating 0.22±0.05 Unit Power dissipation P* 150 Tj 150 â'55 to 150 °C 0.32±0.05 3 0.13±0.05 , '• 115 â'• pF Start of commercial production 2003-06 1 2014-03-01 DF3A3.3FV , 2014-03-01 DF3A3.3FV RESTRICTIONS ON PRODUCT USE â'¢ Toshiba Corporation, and its subsidiaries and Toshiba
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Abstract: DF3A3.3FV TOSHIBA Diodes for Protecting against ESD Epitaxial Planar Type DF3A3.3FV Product for Use Only as Protection against Electrostatic Discharge (ESD). Characteristics Symbol Rating 0.22±0.05 Unit Power dissipation P* 150 Tj 150 -55 ~ 150 0.32±0.05 3 , Cathode and Anode) CT VR = 0, f = 1MHz 115 pF 1 2007-11-01 DF3A3.3FV , 2007-11-01 DF3A3.3FV RESTRICTIONS ON PRODUCT USE · Toshiba Corporation, and its subsidiaries and Toshiba
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Abstract: DF3A3.3FV TOSHIBA Diodes for Protecting against ESD Epitaxial Planar Type DF3A3.3FV Diodes for Protecting against ESD Unit: mm 0.22±0.05 0.8±0.05 0.32±0.05 3 0.13±0.05 · · The mounting of two devices on an ultra-compact package reduces the number of parts and lowers assembly cost. The zener , Equivalent Circuit (top view) 1 2004-06-25 DF3A3.3FV IZ - VZ 100 Ta=25°C ZENER CURRENT IZ (mA) 10 , =1MHz Ta=25°C CT - VR 100 10 0 1 2 3 4 5 REVERSE VOLTAGE VR (V) 2 2004-06-25 DF3A3.3FV Toshiba
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Abstract: DF3A3.3FV TOSHIBA Diodes for Protecting against ESD Epitaxial Planar Type DF3A3.3FV Product for Use Only as Protection against Electrostatic Discharge (ESD). 0.22±0.05 1.2±0.05 0.8±0.05 0.32±0.05 3 0.13±0.05 Unit: mm 1.2±0.05 0.8±0.05 0.4 0.4 0.5±0.05 * This product is for , DF3A3.3FV Guaranteed Level of ESD Immunity Test Condition IEC61000-4-2 (Contact discharge) ESD , 4 5 REVERSE VOLTAGE VR (V) 2 2007-11-01 DF3A3.3FV RESTRICTIONS ON PRODUCT USE · The Toshiba
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diode zener 3FV
Abstract: .6FV * KDZ3.9FV KDZ4.3FV KDZ4.7FV KDZ5.1FV KDZ5.6FV KDZ6.2FV KDZ6.8FV KDZ7.5FV 2F 3F 4F 5F 6F 8 9F BF PF Y , .9FV Y KDZ4.3FV Y KDZ4.7FV Y KDZ5.1FV Y KDZ5.6FV Y KDZ6.2FV Y KDZ6.8FV Y KDZ7.5FV Y KDZ8.2FV Y KDZ9.1FV Y , 23 5 120 0.5 0.5 6.0 6.06 6.40 6.33 7.20 5 25 5 150 0.5 0.5 5.0 5.49 5.80 5.73 6.60 5 30 5 500 0.5 1 KEC
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KDZ36FV GP 836 DIODE HP 3379 gp 728 diode marking 3507 diode DIODE y 12 AP 370 6p KDV36VV
Abstract: .6FV * KDZ3.9FV KDZ4.3FV KDZ4.7FV KDZ5.1FV KDZ5.6FV KDZ6.2FV KDZ6.8FV KDZ7.5FV * * Under development. 2F 3F 4F , KDZ4.3FV Y KDZ4.7FV Y KDZ5.1FV Y KDZ5.6FV Y KDZ6.2FV Y KDZ6.8FV Y KDZ7.5FV Y KDZ8.2FV Y KDZ9.1FV Y , 0.5 1.5 m 40 900 0.5 2.5 5.30 5.49 5.80 ,0 6 6.40 6.65 7.00 7.28 7.70 " S 6.93 if ,.60 , 10.60 120 0.5 0.5 6.0 8.02 8.50 8.85 9.40 9.77 10.40 10.76 1.40 1.74 12.40 12.91 13.80 -
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bo 8p 4f z12v 6FV-KDZ36FV Z22VV Z24VV DZ27VV Z12VV KDZ36
Abstract: . * KDZ3.6FV * KDZ3.9FV KDZ4.3FV KDZ4.7FV KDZ5.1FV KDZ5.6FV KDZ6.2FV KDZ6.8FV KDZ7.5FV * * Under , Vz (V) TYPE No. Grade Min. KDZ3.6FV Y KDZ3.9FV Y KDZ4.3FV Y KDZ4.7FV Y KDZ5.1FV Y KDZ5.6FV Y KDZ6 , 6.65 7.00 6.93 7.90 5 6.06 6.40 6.33 7.20 5 150 0.5 0.5 5.0 5.49 5.80 4.98 5.30 i ».60 30 5 500 0.5 1 , 0.5 6.0 120 0.5 0.5 6.5 % 0.5 ( _ 0.5 7.0 2007. 12.4 Revision No : 5 -
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diode yz 040 Diode LT 443 DZ24VV KDZ27VV DZ10VV VKDZ11VV
Abstract: .6FV 2F 2P * KDZ3.9FV 3F KDZ4.3FV Marking Type No. - Y Grade - Y Grade , 23 5 120 0.5 0.5 6.0 20 5 120 0.5 0.5 6.5 18 5 120 0.5 , Min. 18.35 KDZ3.6FV KDZ3.9FV KDZ4.3FV KDZ4.7FV KDZ5.1FV KDZ5.6FV KDZ6 KEC
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KDZ16VV ZENER QF KDZ3.6FV zener diode 4F KDZ10VV KDZ11VV KDZ12VV KDZ13VV KDZ15VV
Abstract: Rectifier Diode Surface Mounting Device Single Diode OUTLINE D3F60 Unit : mm Weight : 0.16g typ. Package2F 600V 3A · SMD · · IFSM 3FV 60 82 Cathode mark Type No. Feature 4 - Date code Class · Small SMD · High-Reliability · Large IFSM 7.6 2.8 Web RATINGS Item Storage Temperature Operation Junction Temperature Maximum Reverse Voltage Average Rectified Forward Current Peak Surge Forward Shindengen Electric
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Diode smd code 202 smd diode 600v
Abstract: -4 56 DN6847//SE/yTE/S la!Kirfi*LTi-5. «SS« X-i â'ž ^ic ¿'CiEffl-CS 2>- Vcc 18V Icc 8mA O ®jfF*®*ffi«SB -4.5V~16V loUT 20mA 0 Pd 150mW 0 EKMfKlHllfSrtÃ" 'Popi -40~ + 100"C 0 tBWiTTL^MOS ICS-Ã"SSESöoItg PslH -55~ + 125"C O typ) o /Kv>r-V 3fV i'SIL^ .y ir-J; 9 3 4KTV -7SO/1-V ir - v> (DN6847S) 7'P â'¢â / ^El/äämiäSE â'¢DN6847/SE/TE uuu nuu '¡r'r-yitìt-ii DN6847 , ft= DN6847, 'SE. TE/S * e »fFiKSffiS Vcc=12V M â â  //i â'" 175 -60 Gauss _L Bz^H f. 60 -
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DN6847//SE/ N6847S
Abstract: Rectifier Diode Surface Mounting Device Single Diode OUTLINE D3F60 Unit : mm Weight : 0.16g typ. Package2F 600V 3A · SMD · · IFSM 3FV 60 82 Cathode mark Type No. Feature 4 - Date code Class · Small SMD · High-Reliability · Large IFSM 7.6 2.8 Web For details of outline dimensions, refer to our web site or the Semiconductor Short Form Catalog. As for the marking, refer to the specification "Marking Shindengen Electric
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diode marking code 3FV diode smd marking code 76 smd code marking JL smd marking 76 SMD MARKING CODE 3A diode smd marking BUF J534-1
Abstract: 3DUW1XPEHU .0': PP/('&/867(5 www.SunLED.com )HDWXUHV z122)%8,/7,1PP/('/$0365('3&6 z:$7(53522)3$&.$*(:,7+22'68,7$%/( )25287'225$1',1'225,1)250$7,21%2$5'6 z&$1352'8&($1 SunLED USA
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7580
Abstract: Rectifier Diode Surface Mounting Device Single Diode OUTLINE DIMENSIONS Package2F D3F60 600V 3A Unit : mm Weight0.16g typ. - Cathode mark 7.0±0.3 3FV 60 64 IFSM Type No. Class 7.6 0.1 -0.3 2.5 6.1 Date code Standard soldering pad C0.8 2.8±0.2 Feature HighReliability Large IFSM for AutoMount 0.2 1.5 RATINGS Absolute Maximum Ratings Tl = 25unless otherwise specif ied Item Storage Temperature Operation Junction Shindengen Electric
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3FV 60 61 mark 703
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