500 MILLION PARTS FROM 12000 MANUFACTURERS

Datasheet Archive - Datasheet Search Engine

 

"3fv 60"

Catalog Datasheet MFG & Type PDF Document Tags
Abstract: No. Marking - Y KDZ4.3FV 4F 4P 7P KDZ4.7FV 5F 8F YF KDZ5.1FV *KDZ2.7FV CF ZF *KDZ3.0FV VF *KDZ3.3FV Type No. Marking - Y KDZ9.1FV EF , 0.5 0.5 5.0 23 5 120 0.5 0.5 6.0 20 5 120 0.5 0.5 6.5 18 , . 10.21 KDZ2.0FV KDZ2.2FV KDZ2.4FV KDZ2.7FV KDZ3.0FV KDZ3.3FV KDZ3.6FV KDZ3.9FV KDZ4.3FV KDZ4.7FV KDZ5.1FV KDZ5.6FV KDZ6.2FV KDZ6.8FV KDZ7.5FV KDZ8.2FV KDZ9 ... KEC
Original
datasheet

4 pages,
474.27 Kb

marking 3507 diode KDZ10FV Zener Diode LF marking KDZ6.8FV KDZ20FV KDZ30FV KDZ22FV KDZ6.2FV 3FV 60 43 GP 836 DIODE 36FV diode zener 3FV kdz2.0fv KDZ9.1FV mark 2fv diode diode 3FV 60 2FV 60 diode 4FV diode 3fv 60 TEXT
datasheet frame
Abstract: DF3A3.3FV TOSHIBA Diodes for Protecting against ESD DF3A3.3FV Product for Use Only as Protection against Electrostatic Discharge (ESD). 0.22±0.05 0.8±0.05 0.32±0.05 3 0.13±0.05 *This product is for protection against electrostatic discharge (ESD) only and is not intended for any other usage , DF3A3.3FV IZ - VZ 100 Ta=25°C ZENER CURRENT IZ (mA) 10 1 0 0.1 0.01 0 0 0.001 0 1 2 3 4 5 6 7 8 ZENER , REVERSE VOLTAGE VR (V) 2 2007-08-20 DF3A3.3FV RESTRICTIONS ON PRODUCT USE · The information ... Toshiba
Original
datasheet

3 pages,
108.26 Kb

3FV DIODE TEXT
datasheet frame
Abstract: .4FV *KDZ2.7FV *KDZ3.0FV *KDZ3.3FV *KDZ3.6FV *KDZ3.9FV *Under development Marking 1F 7F 8F CF VF WF 2F 3F Y 1P 7P YF ZF YP ZP 2P 3P Type No. KDZ4.3FV KDZ4.7FV KDZ5.1FV KDZ5.6FV KDZ6.2FV KDZ6 , KDZ2.7FV Y KDZ3.0FV Y KDZ3.3FV Y KDZ3.6FV Y KDZ3.9FV Y KDZ4.3FV Y KDZ4.7FV Y KDZ5.1FV Y KDZ5.6FV Y KDZ6 , 7.00 6.93 7.90 5 23 5 120 0.5 0.5 6.0 6.06 6.40 6.33 7.20 5 25 5 150 0.5 0.5 5.0 5.49 5.80 5.73 6.60 5 ... KEC
Original
datasheet

4 pages,
549.59 Kb

DIODE 3FV 60 9p marking 4FV diode 3fv 60 marking 4F TEXT
datasheet frame
Abstract: DF3A3.3FV DF3A3.3FV ESD : mm 0.22±0.05 () P ( 1) 150 Tj 150 Tstg -55~150 °C 0.32±0.05 °C 3 mW 2 (//) (/ ) ( ) ( ) ( 1):FR4 (25.4 mm × 25.4 mm × 1.6 mmt) 0.13±0.05 1 0.5±0.05 0.8±0.05 0.4 , (TOP VIEW) 3.3 ESD ESD IEC61000-4-2 IEC61000-4-2 ( ) ±30kV : 1 2007-11-01 DF3A3.3FV , 3 4 5 VR (V) VZ (V) 2 2007-11-01 DF3A3.3FV · · · ... Original
datasheet

3 pages,
184.26 Kb

DF3A3.3FV TEXT
datasheet frame
Abstract: DF3A3.3FV TOSHIBA Diodes for Protecting against ESD Epitaxial Planar Type DF3A3.3FV Diodes for Protecting against ESD 0.32±0.05 1.2±0.05 0.8±0.05 Rating P* 150 mW Junction temperature Tj 150 °C Tstg -55 ~ 150 °C 3 Unit Power dissipation 2 Storage , Equivalent Circuit (top view) 3.3 1 2004-06-25 DF3A3.3FV CT - VR IZ - VZ 100 1000 TOTAL , 5 REVERSE VOLTAGE VR (V) 2 2004-06-25 DF3A3.3FV RESTRICTIONS ON PRODUCT USE ... Toshiba
Original
datasheet

3 pages,
116.56 Kb

marking 3fv TEXT
datasheet frame
Abstract: DF3A3.3FV TOSHIBA Diodes for Protecting against ESD Epitaxial Planar Type DF3A3.3FV Diodes for Protecting against ESD 0.32±0.05 1.2±0.05 0.8±0.05 Rating P* 150 mW Junction temperature Tj 150 °C Tstg −55 ~ 150 °C 3 Unit Power dissipation 2 , 2004-06-25 DF3A3.3FV CT - VR IZ - VZ 100 1000 TOTAL CAPACITANCE CT (pF) ZENER CURRENT IZ (mA , ) 2 2004-06-25 DF3A3.3FV RESTRICTIONS ON PRODUCT USE 030619EAA 030619EAA • The information ... Toshiba
Original
datasheet

3 pages,
145.34 Kb

TEXT
datasheet frame
Abstract: DF3A3.3FV TOSHIBA Diodes For Protecting Against ESD Epitaxial Planar Type DF3A3.3FV Diodes for Protecting Against ESD Storage temperature range mW 150 °C Tstg −55 ~ 150 0.32±0.05 3 0.13±0.05 150 2 Unit Tj Junction temperature Rating P* Power , destruction Marking Equivalent Circuit (top view) 3.3 1 2004-03-11 DF3A3.3FV CT - VR IZ , (V) 9 10 0 1 2 3 4 5 REVERSE VOLTAGE VR (V) 2 2004-03-11 DF3A3.3FV ... Toshiba
Original
datasheet

3 pages,
146.01 Kb

TEXT
datasheet frame
Abstract: DF3A3.3FV TOSHIBA Diodes for Protecting against ESD DF3A3.3FV Product for Use Only as Protection against Electrostatic Discharge (ESD) Characteristics Symbol Rating 0.22±0.05 Unit Power dissipation P* 150 Tj 150 −55 to 150 °C 0.32±0.05 3 0.13±0.05 , €• 115 ― pF Start of commercial production 2003-06 1 2014-03-01 DF3A3.3FV , 2014-03-01 DF3A3.3FV RESTRICTIONS ON PRODUCT USE • Toshiba Corporation, and its subsidiaries and ... Toshiba
Original
datasheet

3 pages,
130.57 Kb

TEXT
datasheet frame
Abstract: DF3A3.3FV TOSHIBA Diodes for Protecting against ESD Epitaxial Planar Type DF3A3.3FV Product for Use Only as Protection against Electrostatic Discharge (ESD). Characteristics Symbol Rating 0.22±0.05 Unit Power dissipation P* 150 Tj 150 -55 ~ 150 0.32±0.05 3 , Cathode and Anode) CT VR = 0, f = 1MHz 115 pF 1 2007-11-01 DF3A3.3FV , 2007-11-01 DF3A3.3FV RESTRICTIONS ON PRODUCT USE · Toshiba Corporation, and its subsidiaries and ... Toshiba
Original
datasheet

3 pages,
102.21 Kb

TEXT
datasheet frame
Abstract: DF3A3.3FV TOSHIBA Diodes for Protecting against ESD Epitaxial Planar Type DF3A3.3FV Diodes for Protecting against ESD Unit: mm 0.22±0.05 0.8±0.05 0.32±0.05 3 0.13±0.05 · · The mounting of two devices on an ultra-compact package reduces the number of parts and lowers assembly cost. The zener , Equivalent Circuit (top view) 1 2004-06-25 DF3A3.3FV IZ - VZ 100 Ta=25°C ZENER CURRENT IZ (mA) 10 , =1MHz Ta=25°C CT - VR 100 10 0 1 2 3 4 5 REVERSE VOLTAGE VR (V) 2 2004-06-25 DF3A3.3FV ... Toshiba
Original
datasheet

3 pages,
126.36 Kb

TEXT
datasheet frame