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WM8325GEFL/V Cirrus Logic Power Management Circuit, CMOS
WM8321GEFL/V Cirrus Logic Power Management Circuit, CMOS
WM8321GEFL/RV Cirrus Logic Power Management Circuit, CMOS
WM8325GEFL/RV Cirrus Logic Power Management Circuit, CMOS
WM8326GEFL/RV Cirrus Logic Power Supply Management Circuit, CMOS
WM8326GEFL/V Cirrus Logic Power Supply Management Circuit, CMOS

"3Y Power Technology"

Catalog Datasheet MFG & Type PDF Document Tags
Abstract: LITE-ON TECHNOLOGY CORPORATION. Property of Lite-On Only Features * Lead (Pb) free product â , . Part No. : LTL-14CM1H183 BNS-OD-C131/A4 Page : 1 of 10 LITE-ON TECHNOLOGY CORPORATION , Current 30 20 mA Derating Linear From 50â"ƒ 0.4 0.25 mA/â"ƒ Power Dissipation , -14CM1H183 BNS-OD-C131/A4 260â"ƒ for 5 Seconds Max. Page : 2 of 10 LITE-ON TECHNOLOGY CORPORATION , -14CM1H183 BNS-OD-C131/A Page : 3 of 10 LITE-ON TECHNOLOGY CORPORATION. Property of Lite-On Only Lite-On Technology
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46L183 LTL-4231N LTL-14CDJ 1000HRS MIL-STD-750D MIL-STD-883D
Abstract: Technology High-speed, low-power CMOS replacement for ABT functions Typical tSK(o) (Output Skew) < 250ps Low input and output leakage 1uA (max.) VCC = 5V ±10% High drive outputs (­32mA IOH, 64mA IOL) Power off , built using advanced dual metal CMOS technology. These high-speed, low-power devices offer bus/backplane , are designed with power off disable capability to allow "live insertion" of boards when used as , 2 3Y 1 3Y 2 3A 3 3A 4 3Y 3 3Y 4 2OE 2A 1 2A 2 2A 3 2A 4 2Y 1 2Y 2 2Y 3 2Y 4 4OE 4A 1 4A Integrated Device Technology
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IDT74FCT16240AT/CT/ET 16-BIT FCT16240T 240AT 240CT 240ET
Abstract: 16-bit buffer/line driver is built using advanced dual metal CMOS technology. These high-speed , backplanes. The output buffers are designed with power off disable capability to allow "live insertion" of boards when used as backplane drivers. · · · · · · · · 0.5 MICRON CMOS Technology , output leakage 1uA (max.) VCC = 5V ±10% High drive outputs (­32mA IOH, 64mA IOL) Power off disable , 2 1A 3 1A 4 3A 1 3Y 1 3A 2 3Y 2 1Y 3 3A 3 3Y 3 1Y 4 3A 4 3Y 4 Integrated Device Technology
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Abstract: The FCT162240T 16-bit buffer/line driver is built using advanced dual metal CMOS technology. These , Technology High-speed, low-power CMOS replacement for ABT functions Typical tSK(o) (Output Skew) < 250ps , 3Y 1 3A 2 3Y 2 1Y 3 3A 3 3Y 3 1Y 4 3A 4 3Y 4 2 OE 2A 1 4 OE 2Y 1 2A 2 2A 4 The IDT logo is a registered trademark of Integrated Device Technology, Inc , 4A 1 4Y 4 APRIL 2002 1 © 2002 Integrated Device Technology, Inc. DSC-5464/6 Integrated Device Technology
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IDT74FCT162240AT/CT 74ABT16240 MIL-STD-883
Abstract: Technology High-speed, low-power CMOS replacement for ABT functions Typical tSK(o) (Output Skew) < 250ps Low , Typical VOLP (Output Ground Bounce) < 0.25V at VCC = 5V, TA = 25°C · Power off disable outputs permit , is for bus interface or signal buffering applications requiring high speed and low power dissipation , higher speed, lower noise or lower power dissipation levels are desired. The FCT166244T is suited for , DIAGRAM 1 OE 1Y 1 3 OE 1A 1 1A 2 3A 1 3A 2 3Y 1 3Y 2 1Y 2 1A 3 1A 4 1Y 3 3A 3 3Y Integrated Device Technology
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IDT74FCT166244AT/CT ABT16244 244AT 244CT
Abstract: Technology High-speed, low-power CMOS replacement for ABT functions Typical tSK(o) (Output Skew) < 250ps Low , Typical VOLP (Output Ground Bounce) < 0.25V at VCC = 5V, TA = 25°C · Power off disable outputs permit , /Line Driver is for bus interface or signal buffering applications requiring high speed and low power , higher speed, lower noise or lower power dissipation levels are desired. The FCT166244T is suited for , DIAGRAM 1 OE 1Y 1 3 OE 1A 1 1A 2 3A 1 3A 2 3Y 1 3Y 2 1Y 2 1A 3 1A 4 1Y 3 3A 3 3Y Integrated Device Technology
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74fct166244at
Abstract: Integrated Device Technology, Inc. INDUSTRIAL TEMPERATURE RANGE 1 © 1999 Integrated Device Technology, Inc. R FO E C R O N N M OT EW M EN D ES DE IG D N S 5 · 0.5 MICRON CMOS Technology · Typical , ± 0.2V · CMOS power levels (0.4u W typ. static) · Rail-to-Rail output swing for increased noise , metal CMOS technology. This device is ideal for use in applications in which a single address bus is , designated threshold levels. OE 2 21 1Y 1 CLK 19 4 CLK 2Y 1 2 A1 8 3Y 1 Integrated Device Technology
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IDT74ALVC162831 ALVC162831
Abstract: FEATURES: DESCRIPTION: ­ ­ ­ 0.5 MICRON CMOS Technology Typical tSK(0) (Output Skew) < 250ps , VCC = 2.7V to 3.6V, Extended Range ­ VCC = 2.5V ±0.2V ­ CMOS power levels (0.4u W typ. static) ­ , dual metal CMOS technology. This device is ideal for use in applications in which a single address , 2 A1 8 D Q 2Y 1 3Y 1 1 0 SEL 1Y 1 1 4Y 1 22 TO EIGHT OTHER , Technology, Inc. DSC-4495/- IDT74ALVCH16831 3.3V CMOS 1-BIT TO 4-BIT ADDRESS REGISTER/DRIVER Integrated Device Technology
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ALVCH16831 SO80-1
Abstract: CMOS technology. This device is ideal for use in applications in which a single address bus is driving , the logic level of the select (SEL) input. ­ ­ ­ 0.5 MICRON CMOS Technology Typical tSK(0 , ±0.3V, Normal Range ­ VCC = 2.7V to 3.6V, Extended Range ­ VCC = 2.5V ±0.2V ­ CMOS power levels (0.4u , 8 D Q 2Y 1 3Y 1 1 0 SEL 1Y 1 1 4Y 1 22 TO 8 OTHER CHANNELS EXTENDED COMMERCIAL TEMPERATURE RANGE MARCH 1999 1 c 1999 Integrated Device Technology, Inc Integrated Device Technology
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IDT74ALVCH162831 ALVCH162831
Abstract: FEATURES: ­ ­ ­ ­ ­ ­ ­ ­ ­ ­ DESCRIPTION: 0.5 MICRON CMOS Technology Typical tSK(0 , , Normal Range VCC = 2.7V to 3.6V, Extended Range VCC = 2.5V ±0.2V CMOS power levels (0.4u W typ. static , using advanced dual metal CMOS technology. This device is ideal for use in applications in which a , 21 19 4 CLK 2 A1 8 D Q 2Y 1 3Y 1 1 0 SEL 1Y 1 1 4Y 1 , Integrated Device Technology, Inc. DSC-4495/- IDT74ALVCH16831 3.3V CMOS 1-BIT TO 4-BIT ADDRESS Integrated Device Technology
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SO-801
Abstract: : IDT74ALVC16831 DESCRIPTION: ­ ­ ­ 0.5 MICRON CMOS Technology Typical tSK(0) (Output Skew) < 250ps , , Normal Range ­ VCC = 2.7V to 3.6V, Extended Range ­ VCC = 2.5V ±0.2V ­ CMOS power levels (0.4u W typ , using advanced dual metal CMOS technology. This device is ideal for use in applications in which a , 3Y 1 1 Q 0 SEL 1Y 1 1 4Y 1 22 TO EIGHT OTHER CHANNELS EXTENDED COMMERCIAL TEMPERATURE RANGE OCTOBER 1999 1 c 1999 Integrated Device Technology, Inc. DSC-4916/- Integrated Device Technology
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ALVC16831 SO-80
Abstract: ADVANCE INFORMATION DESCRIPTION: FEATURES: ­ ­ ­ 0.5 MICRON CMOS Technology Typical tSK(0 , ±0.3V, Normal Range ­ VCC = 2.7V to 3.6V, Extended Range ­ VCC = 2.5V ±0.2V ­ CMOS power levels (0.4u , /driver is built using advanced dual metal CMOS technology. This device is ideal for use in applications , 8 D 2Y 1 3Y 1 1 Q 0 SEL 1Y 1 1 4Y 1 22 TO EIGHT OTHER CHANNELS EXTENDED COMMERCIAL TEMPERATURE RANGE MARCH 1999 1 c 1999 Integrated Device Technology, Inc Integrated Device Technology
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Abstract: CMOS technology. This device is ideal for use in applications in which a single address bus is driving , the logic level of the select (SEL) input. ­ ­ ­ 0.5 MICRON CMOS Technology Typical tSK(0 , ±0.3V, Normal Range ­ VCC = 2.7V to 3.6V, Extended Range ­ VCC = 2.5V ±0.2V ­ CMOS power levels (0.4u , 3Y 1 1 0 SEL 1Y 1 1 4Y 1 22 TO 8 OTHER CHANNELS EXTENDED COMMERCIAL TEMPERATURE RANGE OCTOBER 1999 1 c 1999 Integrated Device Technology, Inc. DSC-4537/- Integrated Device Technology
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Abstract: CMOS power levels (0.4u W typ. static) Rail-to-Rail output swing for increased noise margin This 32-bit buffer/driver is built using advanced dual metal CMOS technology. This high-speed, low power device , Technology Typical tSK(o) (Output Skew) < 250ps ESD > 2000V per MIL-STD-883, Method 3015; > 200V using , E6 E1 F2 3A 3 3A 4 4A 1 4A 2 F6 F1 3Y 1 5A 1 J5 J2 5Y 1 3Y 2 5A 2 J6 J1 5Y 2 K5 K2 3Y 3 5A 3 3Y 4 5A 4 H3 6 OE G5 G2 G6 Integrated Device Technology
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IDT74ALVCH32244 6A4 DIODE 6a3 diode 6Y 7A1 bf 244 32-BIT ALVCH32244 BF96-1
Abstract: - - - - IDT54/74FCT16240AT/CT/ET 0.5 MICRON CMOS Technology High-speed, low-power CMOS , commercial range of -40°C to +85°C VCC = 5V ±10% High drive outputs (-32mA IOH, 64mA IOL) Power off , °C The FCT16240T/AT/CT/ET 16-bit buffer/line driver is built using advanced dual metal CMOS technology , high capacitance loads and low-impedance backplanes. The output buffers are designed with power off , BLOCK DIAGRAM 1 OE 3 OE 1A 1 1Y 1 1A 2 1Y 2 1A 3 1A 4 3A 1 3Y 1 3A 2 Integrated Device Technology
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SO48-1 SO48-2 SO48-3 E48-1
Abstract: are built using advanced dual metal CMOS technology. These high-speed, low power devices offer bus , 3.3V CMOS 16-BIT BUFFER/LINE DRIVER Integrated Device Technology, Inc. IDT74ALVCH16244 , features: ­ 0.5 MICRON CMOS Technology ­ Typical tSK(o) (Output Skew) < 250ps ­ ESD > 2000V per MIL-STD , , Normal Range ­ VCC = 2.7V to 3.6V, Extended Range ­ VCC = 2.5V ±0.2V ­ CMOS power levels (0.4uW typ , BLOCK DIAGRAM 1OE 3 OE 1A 1 1Y 1 3A 1 3Y 1 1A 2 1Y 2 3A 2 3Y 2 1A 3 1Y Integrated Device Technology
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IDT74ALVCH162244 IDT74ALVC16244 IDT74ALVC162244 ALVCH16244 ALVC16244 ALVCH162244 ALVC162244
Abstract: IDT74ALVC162831 FEATURES: ­ ­ ­ 0.5 MICRON CMOS Technology Typical tSK(0) (Output Skew) < 250ps ESD , 3.6V, Extended Range ­ VCC = 2.5V ±0.2V ­ CMOS power levels (0.4u W typ. static) ­ Rail-to-Rail , CMOS technology. This device is ideal for use in applications in FUNCTIONAL BLOCK DIAGRAM OE1 20 , 1999 Integrated Device Technology, Inc. DSC-4706/- IDT74ALVC162831 3.3V CMOS 1-BIT TO 4 , RATING Symbol VTERM(2) (1) 4Y 1 1 80 3Y 1 2 79 2Y 2 GND 3 78 GND Integrated Device Technology
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ua 4706
Abstract: -bit buffer/line drivers are built using advanced dual metal CMOS technology. These high-speed, low power , 3.3V CMOS 16-BIT BUFFER/LINE DRIVER WITH 5 VOLT TOLERANT I/O Integrated Device Technology, Inc , , Normal Range ­ VCC = 2.7V to 3.6V, Extended Range ­ VCC = 2.5V ±0.2V ­ CMOS power levels (0.4uW typ , 1OE 3OE 1A 1 1Y 1 3A 1 3Y 1 1A 2 1Y 2 3A 2 3Y 2 1A 3 1Y 3 3A 3 3Y 3 1A 4 1Y 4 3A 4 3Y 4 2OE 4OE 2A 1 2Y 1 4A 1 4Y 1 2A 2 2Y 2 Integrated Device Technology
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IDT74LVCH16244A IDT74LVCH162244A IDT74LVC16244A IDT74LVC162244A LVCH16244A LVC16244A lvc1622 LVCH162244A lvc16244
Abstract: CMOS 16-BIT BUFFER/LINE DRIVER DESCRIPTION: FEATURES: - - - 0.5 MICRON CMOS Technology , Range CMOS power levels (0.4u W typ. static) Rail-to-Rail output swing for increased noise margin Low , dual metal CMOS technology. These high-speed, low-power devices offer bus/backplane interface , 1Y 1 44 5 43 6 1Y 4 16 17 3Y 2 3Y 3 3Y 4 3A 4 24 48 2 OE 4 OE , 3Y 1 33 3 1A 2 13 3A 1 2Y 4 4A 4 COMMERCIAL TEMPERATURE RANGE 4Y 1 4Y 2 Integrated Device Technology
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TOP 244 GN IDT74FCT163244 IDT74FCT163244/A/C FCT163244/A/C
Abstract: : IDT74ALVCH162244 DESCRIPTION: ­ ­ ­ 0.5 MICRON CMOS Technology Typical tSK(0) (Output Skew) < 250ps , 0.2V ­ CMOS power levels (0.4u W typ. static) ­ Rail-to-Rail output swing for increased noise margin , -bit buffer/driver is built using advanced dual metal CMOS technology. The ALVCH162244 is designed , 3Y 2 33 16 3Y 3 32 17 3Y 4 3Y 1 24 30 19 29 20 4Y 2 27 22 4Y 3 26 23 4Y 1 4Y 4 MARCH 1999 1 c 1999 Integrated Device Technology Integrated Device Technology
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