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Part Manufacturer Description PDF & SAMPLES
TM124FBK32S-60 Texas Instruments 1MX32 EDO DRAM MODULE, 60ns, SMA72, SIMM-72
TM248GBK32F-70 Texas Instruments 2MX32 EDO DRAM MODULE, 70ns, SMA72, SIMM-72
TM497FBK32S-60 Texas Instruments 4MX32 EDO DRAM MODULE, 60ns, SMA72, SIMM-72
TM893GBK32H-60 Texas Instruments 4MX32 EDO DRAM MODULE, 60ns, QMA72, SIMM-72
TM124FBK32I-50 Texas Instruments 1MX32 EDO DRAM MODULE, 50ns, SMA72, SIMM-72
TM248GBK32H-70 Texas Instruments 2MX32 EDO DRAM MODULE, 70ns, SMA72, SIMM-72

"32mb x 36" simm edo

Catalog Datasheet MFG & Type PDF Document Tags
Abstract: #, ECC-optimized configuration in a 72-pin, single in-line memory module (SIMM) â'¢ 16MB (4 Meg x 36) and 32MB (8 , CONFIGURATION FEATURES MODE MT9D436M-XX X 4 Meg x 36 4 CAS#, ECC EDO MT18D836M-XX X 8 Meg x 36 4 CAS#, ECC EDO SYMBOL A10 DQ5 DQ23 DQ6 DQ24 DQ7 DQ25 DOS DQ26 A7 PIN , OPTIONS 72-Pin SIMM (DD-12) 4 Meg x 36 (shown) (DD-13) 8 Meg x 36 4, 8 MEG X 36 ECC-OPTIMIZED , Data-In H-»L L H X X High-Z CBR REFRESH DRAM SIMM JEDEC-DEFINED -
OCR Scan
MT9D436 MT18D836
Abstract: MEG x 32 DRAM M ODULE HIDDEN REFRESH CYCLE 20'3 4 (WE = HIGH; OE = LOW) DRAM SIMM EDO READ , echanical key 4 MEG, 8 MEG x 32 16, 32 MEGABYTE, 3.3V, OPTIONAL SELF REFRESH, FAST PAGE OR EDO PAGE MODE PIN ASSIGNMENT (Front View) 72-Pin SIMM (DD-16) 4 Meg x 32, (DD-17) 8 Meg x 32 o nn uu V ss , M ODE EDO PAGE MODE MARKING -6 -7 M G Blank S Blank X ' 32M B version only VALID PART , MT8LD432G-XX MT8LD432G-XX S 4 Meg x 32 EDO, SOJ, Gold 4 Meg x 32 EDO, S*, SOJ, Gold 4 Meg x 32 EDO, SOJ -
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marking d432 T8LD432 T16LD832 MT16LD032 MT8LD432 MT16L0832
Abstract: terminates the FAST PAGE MODE operation. DRAM SIMM xl6 CONFIGURATION EDO PAGE MODE For x l6 , 72-pin, single in-line m emory module (SIMM) â'¢ 16MB (4 M eg x 32) and 32M B (8 M eg x 32) â , MODE Blank X â'¢EDO version only PART NUMBERS EDO Operating Mode PART NU M BER , access 60ns access 72-Pin SIMM (DD-3) 4 Meg x 32 (DD-4) 8 Meg x 32 4, 8 MEG X 32 DRAM SIMMs , m em ory organization. EDO PAGE M ODE, designated by the "X " version, is an accelerated FAST -
OCR Scan
MT8D432 MT16D832 T8D432G CYCLE20
Abstract: 5 V, EDO, Unbuffered 4M x 36 (16MB), 8M x 36 (32MB) 72-LEAD LOW HEIGHT SIMM CASE 866-02 FRONT , 5VEDOU36SQ 17 4M, 8M X 36 . 5 V . EDO · U PACKAGE DIMENSIONS 72-LEAD SIMM CASE 866-02 NOTES , Module (SIMM) Single 5 V Power Supply, TTL-Compatible Inputs and Outputs Extended Data Out (EDO) RAS-Only , MOTOROLA DRAM 4M, 8M 16MB BLOCK DIAGRAM X 36 · 5 V · EDO · U VCCC1-C10 VSS0.22 (iF (MIN) DRAW S DRAMs MOTOROLA DRAM 5VEDOU36SQ 3 4M, 8M X 36 . 5 V . EDO · U 32MB BLOCK DIAGRAM -
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8M DRAM 5VEDOU36SQ/D 16MB/32MB MB3640J00TCSN60 MB3640J00TCSG60 MB3640J00MCSN60 MB364OJ0OMCSG6O
Abstract: operating mode MARKING â'¢ Timing 60ns access 70ns access 72-Pin SIMM (DD-3) 4 Meg x 32 (DD , NUMBER MT8D432G- xx X MT8D432M- XX X MT16D832G-XX X MT16D832M-XX X DESCRIPTION 4 Meg x 32, EDO, Gold 4 Meg x 32, EDO, Tin/Lead 8 Meg x 32, EDO, Gold 8 Meg x 32, EDO, Tin/Lead EDO PAGE MODE EDO , DRAM SIMM U1 -U8 = 4 Meg x 4 DRAMs MT8D432(X), MT16DB32(X) DM44.pm5 - Rev. 12/95 r Q C 0 â , AO-A10 DRAM SIMM DQ17 â'¢ itti DQ1 - 4 US CÃ"S RÃ"S X I AO-A10 -DQ16 m i -
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CYCLE22
Abstract: 32 5 V, EDO, Unbuffered DRAM Single-In-Line Memory Module (SIMM) 1M x 32 (4MB), 2M x 32 (8MB , 21 1M, 2M, 4M, 8M x 32 5 V EDO U 72­LEAD SIMM CASE 866H­01 A 0.006 (0.15) M T Y X S , 4M x 32 (16MB), 8M x 32 (32MB) 72­LEAD LOW HEIGHT SIMM CASE 866­02 (SOJ), CASE 866H­01 (TSOP , 1M, 2M, 4M, 8M x 32 5 V EDO U PIN ASSIGNMENTS Pin Name Pin Name Pin Name Pin , PD4 5VEDOU32S 2 Speed 32MB MOTOROLA DRAM 1M, 2M, 4M, 8M x 32 5 V EDO U 4MB BLOCK Motorola
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MB321BJ08TASN60 MB321BJ08TASG60 MB321BT08TASN60 MB321BT08TASG60 MB322BJ08TASN60 MB322BJ08TASG60 MB322BT08TASN60 MB324CT00TBSN60 MB324CJ00TBSN60 MB322BT08TASG60 5VEDOU32S/D
Abstract: /datasheet.html FEATURES PIN ASSIGNMENT (Front View) 72-Pin SIMM 4 Meg x 36 (shown) 8 Meg x 36 · Four-CAS#, ECC-optimized configuration in a 72-pin, single in-line memory module (SIMM) · 16MB (4 Meg x 36) and 32MB (8 Meg x 36) · High-performance CMOS silicon-gate process · Single 5V ±10% power , . OBSOLETE 4, 8 MEG x 36 ECC-OPTIMIZED DRAM SIMMs 72-Pin SIMM (16MB) 4.260 (108.20) 4.240 (107.70 , OBSOLETE 4, 8 MEG x 36 ECC-OPTIMIZED DRAM SIMMs MT9D436 X MT18D836 X DRAM MODULE For Micron Technology
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MT9D436M- MT18D836M-
Abstract: 5VEDOU32S 19 1M, 2M, 4M, 8M X 32 · 5 V · EDO · U PACKAGE DIMENSIONS 72-LEAD SIMM CASE 666A-02 , 1M, 2M, 4M, 8M x 32 « 5 V · EDO » U 72-LEAD SIMM CASE 866-02 NOTES: 1. DIMENSIONING AND , MOTOROLA DRAM 5VEDOU32S 21 1M, 2M, 4M, 8M X 32 · 5 V · EDO · U 72-LEAD SIMM CASE 866H-01 c -· , Cycle Refresh: 16 ms 16MB/32MB: 2048 Cycle Refresh: 32 ms 36 36 37 S V, EDO, Unbuffered 1M x 32 (4MB), 2M x 32 (8MB) 72-LEAD LOW HEIGHT SIMM BACK O' 1 FRONT 1 O PART NUMBERS (See Page 23 -
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V145M B324D B322BT08TASG60 MB324CJ00TBSG60 MB324CT00TBSG60 MB328CJ00TBSN60 MB328CJ00TBSG60 MB328CT00TBSN60
Abstract: memory module (SIMM) · 16MB (4 Meg x 36) and 32MB (8 Meg x 36) · High-performance CMOS silicon-gate , Data-Out (EDO) PAGE MODE access r tM IV I M T18D836 x For the latest data sheet revisions, please , -Pin SIMM 4 Meg x 36 (shown) 8 Meg x 36 OPTIONS · Timing 50ns access 60ns access · Package 72-pin SIMM , MT18D836M-X X x - speed CONFIGURATION 4 Meg x 36 8 Meg x 36 FEATURES 4 CAS#, ECC 4 CAS#, ECC MODE EDO EDO , , INC- 4,8 MEG X 36 ECC-OPTIMIZED DRAM SIMMs 72-Pin SIMM (16MB) 4.260 (10&20) 4240(107.70) .200 -
OCR Scan
Abstract: NOT RECOMMENDED FOR NEW DESIGNS 4, 8 MEG x 36 ECC-OPTIMIZED DRAM SIMMs DRAM MODULE MT9D436 X MT18D836 X For the latest data sheet revisions, please refer to the Micron Web site: www.micron.com/datasheets FEATURES PIN ASSIGNMENT (Front View) 72-Pin SIMM 4 Meg x 36 (shown) 8 Meg x 36 , RECOMMENDED FOR NEW DESIGNS 4, 8 MEG x 36 ECC-OPTIMIZED DRAM SIMMs EDO PAGE MODE (continued) REFRESH , NEW DESIGNS 4, 8 MEG x 36 ECC-OPTIMIZED DRAM SIMMs 72-Pin SIMM (16MB) 4.260 (108.20) 4.240 Micron Technology
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dm65 edo dram 50ns 72-pin simm edo dram 60ns 72-pin simm edo dram 60ns 72-pin simm 32mb
Abstract: LEGEND L0832E3A-2LCHA16C 8x32 60ns 72-pin EDO SIMM Performance Technology L0832E3A , memory module (SIMM) · 32MB (8 Meg x 32) · High-performance CMOS silicon-gate process · , L0832E3A-2LCHA16C 8x32 60ns 72-pin EDO SIMM Performance Technology REFRESH Returning RAS# and CAS , . LEGEND L0832E3A-2LCHA16C 8x32 60ns 72-pin EDO SIMM Performance Technology ICC SPECIFICATIONS , . LEGEND L0832E3A-2LCHA16C 8x32 60ns 72-pin EDO SIMM Performance Technology AC ELECTRICAL Legend
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l0832 simm 72 pin edo simm EDO 72pin A0-A10
Abstract: GMM740101 OCS/SG (1Mx4) X 8 Power Speed Supply (ns) 60/70 Feature FP(1K) EDO(1K) FP (1K) FP(4K) EDO(1K) EDO(4K) FP (1K) FP (1K) Avail. Remark 1Mx32 (1Mx16) X 2 5V (1Mx4) X 8 + (1Mx1) X 4 , (1Mx4) X 16 + (1Mx1) X 8 -
OCR Scan
GMM732201 LG 2MX32 EDO simm module GMM781000CNS-6 GMM791000CNS-6 GMM784000CS-6 GMM794000CS-6 1GMM781OOOCNS-7 1GMM791000CNS-7
Abstract: ADVANCE M 1 ir n n M .â' L:? MTSLD432X(S)r MT16LD832 X(S) 4- MEG, a MEG x 32 DRAM MODULE DRAM â  a ^ i l l 4 MEG, 8 MEG x 32 ^ 16, 32 MEGABYTE, 3.3V, EDO PAGE MODE , ,048-cycle refresh distributed across 32ms or 128ms â'¢ Extended data-out (EDO) PAGE MODE access cycle , 70ns access -6 -7 PIN ASSIGNMENT (Top View) 72-Pin SIMM 0 o 1nrm TTTnTrrrrrrnTri , C 55 T 60 DQ30 DQ14 â'¢ Packages Leadless72-pinSIM M Leadless 72 -pin SIMM (gold) M -
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C1994 MT8LD432X MT8L0432 MT16U5832 U9-U16 T8L0432
Abstract: SIMM 72 -pin SIMM (gold) M G · Operating Modes FAST PAGE MODE EDO PAGE MODE 72-Pin SIMM , . (Reference MT4C4M4E8 DRAM data sheet for additional information on EDO functionality.) The MT8D432(X , VSS PRD3 69 VSS NC PRD4 70 VSS NC *EDO version only 4, 8 Meg x 32 DRAM , , Micron Technology, Inc. 4, 8 MEG x 32 DRAM SIMMs TECHNOLOGY, INC. EDO PAGE MODE AC ELECTRICAL , Technology, Inc. 4, 8 MEG x 32 DRAM SIMMs TECHNOLOGY, INC. READ CYCLE (EDO PAGE MODE Module) tRC Micron Technology
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72-PIN
Abstract: , 8 MEG x 36 16, 32 MEGABYTE, 5V, ECC, EDO PAGE MODE PIN ASSIGNMENT (Front View) 72-Pin SIMM o , MT9D436M-XX X *32MB version only MT18D836M-XX X DESCRIPTION 4 Meg x 36, Tin/Lead, 4 CAS# ECC, EDO 8 Meg x 36, Tin/Lead, 4 CAS# ECC, EDO xx = speed WRITE occurs when WE# goes LOW prior to CAS , ADVANCE M IC R O N 1 - MT9D436 X, MT18D836 X 4 MEG, 8 MEG x 36 DRAM MODULES EDO PAGE MODE , MT9D436 X, MT18D836 X 4 MEG, 8 MEG x 36 DRAM MODULES READ CYCLE (EDO PAGE MODE Module) $ $ UNDEFINED -
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Abstract: -Pin SIMM (DD-3) 4 Meg x 32 (DD-4) 8 Meg x 32 o in n n iìììT n ììT m ìiìT rm im iTM ^ ¡ iiiiv n m m iim , EDO Operating Mode PART NUMBER MT8D432G- xx X M T8D432M - xx X M T 16D832G-XX X M T 16D832M-XX X DESCRIPTION 4 Meg x 32, EDO, Gold 4 Meg x 32, EDO, Tin/Lead 8 Meg x 32, EDO, Gold 8 Meg x 32, EDO, Tin/Lead , /Lead DRAM SIMM MT16D832G-XX MT16D832M-XX xx = speed GENERAL DESCRIPTION T h e M T 8D 432(X , 906 880 906 UNITS mA mA NOTES ICC3 mA 3, 24 (CC4 mA 3, 24 DRAM SIMM ICC5 (X -
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MT16DB3E
Abstract: or Extended Data-Out (EDO) PAGE MODE access OPTIONS PIN ASSIGNMENT (Front View) 72-Pin SIMM , -pin SIMM 72 -pin SIMM (Gold) M G · Operating Modes FAST PAGE MODE EDO PAGE MODE PIN , *32MB version only None X *EDO version only PART NUMBERS EDO Operating Mode PART NUMBER , only. KEY TIMING PARAMETERS x = speed EDO Operating Mode FPM Operating Mode PART NUMBER , 70 VSS NC *EDO version only 4, 8 Meg x 32 DRAM SIMMs DM44.p65 ­ Rev. 9/98 2 Micron Micron Technology
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Abstract: (SIMM) · 16MB (4 Meg x 32) and 32MB (8 Meg x 32) · High-performance CMOS silicon-gate process · , ) 72-Pin SIMM 4 Meg x 32 8 Meg x 32 MARKING · Timing 50ns access 60ns access PIN SYMBOL , PAGE MODE EDO PAGE MODE None X *EDO version only PART NUMBERS EDO Operating Mode PART , Gold Tin/Lead KEY TIMING PARAMETERS EDO Operating Mode x = speed SPEED -5 -6 FPM , , designated by the "X" version, is an accelerated FAST-PAGE-MODE cycle. The primary advantage of EDO is the Micron Technology
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Abstract: in a 72-pin, single in-line memory module (SIMM) · 16MB (4 Meg x 32) and 32MB (8 Meg x 32) · , -Pin SIMM 4 Meg x 32 8 Meg x 32 MARKING · Timing 50ns access 60ns access PIN SYMBOL PIN SYMBOL , EDO PAGE MODE None X *EDO version only PART NUMBERS EDO Operating Mode PART NUMBER , Tin/Lead KEY TIMING PARAMETERS EDO Operating Mode x = speed SPEED -5 -6 FPM Operating , to the MT4C4M4E8 DRAM data sheet for additional information on EDO functionality.) The MT8D432(X Micron Technology
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DM44 25AP-P edo dram 72-pin simm 4 m
Abstract: ) X 9 5V ± 10% 60/70 F P (1K/16ms) NOW Parity · 4M Byte DRAM Module (72 pin SIMM , F P (1K) EDO(1K) F P (1K) FP(4K) EDO(1K) EDO(4K) F P (1K) F P (1K) Avail. Remark X 2 5V , /60 F P (4K) EDO (2K) ED O (4K) Non-Parity (4Mx4) X 16 + (4Mx1) X 8 5V 60/70 F P (2K , ) Avail. Remark X 3.3V X 8 F P (2K) ED O (2K) F P (1K) 5V (1Mx16) X 8 EDO (1K) F P (4K , ) F P (2K) EDO (2K) FP (2K) EDO (2K) F P (2K) ED O (2K) NOW Non-Parity 3 3V 5V (2Mx8) X 8 3 -
OCR Scan
GMM732411 GMM7362000 OMM781000CNS-6 GMM781OOOCNS-7 GMM79I GMM784000CS-7 GMM794000CS-7 1MX32
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