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"32Mx32" DRAM 72-pin simm

Catalog Datasheet MFG & Type PDF Document Tags
Abstract: DRAM MODULE KM M53232000B K/B KG 4Byte 32Mx32 SIMM (16Mx4 base) Revision 0.0 Sept. 1997 ELECTRONICS DRAM MODULE Revision History Version 0.0 (Sept, 1997) · Removed two AC , .) in A C CHARACTERISTICS. ELECTRONICS DRAM MODULE KMM53232000BK/BKG Fast Page Mode 32M x 32 DRAM SIMM Using 16Mx4, 4K Refresh, 5V GENERAL DESCRIPTION The Samsung KMM53232000B is a 32Mx32bits , Vss i ELECTRONICS DRAM MODULE ABSOLUTE MAXIMUM RATINGS * Item Voltage on any pin relative to -
OCR Scan
KMM53232000BK 53232000BKG KM44C16100BK
Abstract: DRAM MODULE KMM53232000BK/BKG 4Byte 32Mx32 SIMM (16Mx4 base) Revision 0.0 Sept. 1997 DRAM MODULE KMM53232000BK/BKG Revision History Version 0.0 (Sept, 1997) â'¢ Removed two AC , . ELECTRONICS DRAM MODULE KMM53232000BK/BKG KMM53232000BK/BKG Fast Page Mode 32M x 32 DRAM SIMM Using , CMOS sixteen 16Mx4bits DRAMs in SOJ packages mounted on a 72-pin glass-epoxy substrate. A 0.1 , DRAM. The â'¢ Part Identification - KMM53232000BK(4K cycles/64ms Ref, SOJ, Solder) - -
OCR Scan
KMM53232000BKG
Abstract: HANBiT HMD32M32M16EG 128Mbyte (32Mx32) 72-pin EDO Mode 4K Ref. SIMM Design 5V Part No , DQ0 DQ16 5 M DQ8 14 72-pin SIMM SYMBOL 49 4 w Packages PIN DQ22 3 , . The module consists of sixteen CMOS 16M x 4bit DRAMs in 32-pin TSOPII packages mounted on a 72-pin , for each DRAM components. The module is a Single In-line Memory Module with edge connections and is intended for mounting in to 72-pin edge connector sockets. All module components may be powered from a HANBiT Electronics
Original
edo dram 60ns 72-pin simm HMD32M32M16EG-- 128MB HMD32M32M16EG-5 HMD32M32M16EG-6
Abstract: HANBit HMD32M32M16G 128Mbyte (32Mx32) 72-pin Fast Page Mode 4K Ref. SIMM Design 5V Part No , PERFORMANCE RANGE DQ23 28 7 M 27 DQ1 11 72-pin SIMM DQ16 6 w Packages DQ24 , . The module consists of sixteen CMOS 16M x 4bit DRAMs in 32-pin TSOPII packages mounted on a 72-pin , for each DRAM components. The module is a Single In-line Memory Module with edge connections and is intended for mounting in to 72-pin edge connector sockets. All module components may be powered from a HANBiT Electronics
Original
HANBit 72-pin SIMM 1760 HMD32M32M16G-- HMD32M32M16G-5 HMD32M32M16G-6
Abstract: DRAM MODULE KMM53232004BK/BKG 4Byte 32Mx32 SIMM (16Mx4 base) Revision 0.0 Sept. 1997 DRAM MODULE Revision History Version 0.0 (Sept, 1997) KMM53232004BK/BKG · Removed two AC , . ELECTRONICS DRAM MODULE KMM53232004BK/BKG EDO Mode 32M X KMM53232004BK/BKG 32 DRAM SIMM Using , and the data out pin will remain high impedance for the duration of the cycle. ELECTRONICS DRAM , on a 72-pin glass-epoxy substrate. A 0.1 or 0.22uF decoupling capacitor is mounted on the printed -
OCR Scan
64mb 72-pin simm KMM53232004BK KMM53232004BKG KMM53232004B KM44C16104BK
Abstract: DRAM MODULE M53213200CE0/CJ0-C 4Byte 32Mx32 SIMM (16Mx4 base) Revision 0.0 June 1999 DRAM MODULE Revision History Version 0.0 (June 1999) · The 4th. generation of 64Mb DRAM components are applied for this module. M53213200CE0/CJ0-C DRAM MODULE M53213200CE0/CJ0-C M53213200CE0/CJ0-C Fast Page Mode 32M x 32 DRAM SIMM Using 16Mx4, 4K Refresh, 5V GENERAL DESCRIPTION , Samsung M53213200CE0/CJ0-C consists of sixteen CMOS 16Mx4bits DRAMs in SOJ packages mounted on a 72-pin Samsung Electronics
Original
M53213200CE0-C M53213200CJ0-C M53213200CE0/CJ0 K4F640411C
Abstract: DRAM MODULE KMM53232000CV/CVG 4Byte 32Mx32 SIMM (16Mx4 base) Revision 0.0 JUNE 1999 DRAM MODULE Revision History Version 0.0 (JUNE 1999) · The 4th. generation of 64Mb DRAM components are applied for this module. KMM53232000CV/CVG DRAM MODULE KMM53232000CV/CVG Fast Page Mode 32M x 32 DRAM SIMM Using 16Mx4, 4K Refresh, 5V GENERAL DESCRIPTION The Samsung KMM53232000C is a , 16Mx4bits DRAMs in SOJ packages mounted on a 72-pin glass-epoxy substrate. A 0.1 or 0.22uF decoupling Samsung Electronics
Original
KMM53232000CV KMM53232000CVG KM44C16100CK
Abstract: DRAM MODULE KMM53232004CV/CVG 4Byte 32Mx32 SIMM (16Mx4 EDO base) Revision 0.0 June 1999 DRAM MODULE Revision History Version 0.0 (June 1999) · The 4th. generation of 64Mb DRAM components are applied for this module. KMM53232004CV/CVG DRAM MODULE KMM53232004CV/CVG EDO Mode 32M x 32 DRAM SIMM Using 16Mx4, 4K Refresh, 5V GENERAL DESCRIPTION The Samsung KMM53232004C is a 32Mx32bits , in SOJ packages mounted on a 72-pin glass-epoxy substrate. A 0.1 or 0.22uF decoupling capacitor is Samsung Electronics
Original
KMM53232004CV KMM53232004CVG KMM53232004CV/CVG-- KM44C16104CK
Abstract: DRAM MODULE M53213200BE0/BJ0-C 4Byte 32Mx32 SIMM (16Mx4 base) Revision 0.1 June 1998 DRAM MODULE M53213200BE0/BJ0-C Revision History Version 0.0 (Sept. 1997) · Removed two AC , . Version 0.1 (June 1998) · The 3rd. generation of 64M DRAM components are applied for this module. DRAM MODULE M53213200BE0/BJ0-C M53213200BE0/BJ0-C Fast Page Mode 32M x 32 DRAM SIMM Using 16Mx4 , DRAMs in SOJ packages mounted on a 72-pin glass-epoxy substrate. A 0.1 or 0.22uF decoupling capacitor Samsung Electronics
Original
M53213200BJ0-C M53213200B M53213200BE0/BJ0 K4F640411B
Abstract: DRAM MODULE KMM53232000CK/CKG 4Byte 32Mx32 SIMM (16Mx4 base) Revision 0.0 June 1999 DRAM MODULE Revision History Version 0.0 (June 1999) · The 4th. generation of 64Mb DRAM components are applied for this module. KMM53232000CK/CKG DRAM MODULE KMM53232000CK/CKG KMM53232000CK/CKG Fast Page Mode 32M x 32 DRAM SIMM Using 16Mx4, 4K Refresh, 5V GENERAL DESCRIPTION , KMM53232000C consists of sixteen CMOS 16Mx4bits DRAMs in SOJ packages mounted on a 72-pin glass-epoxy Samsung Electronics
Original
KMM53232000CKG KMM53232000CK
Abstract: DRAM MODULE M53233200CE0/CJ0-C 4Byte 32Mx32 SIMM (16Mx4 base) Revision 0.0 June 1999 DRAM MODULE Revision History Version 0.0 (June 1999) · The 4th. generation of 64Mb DRAM components are applied for this module. M53233200CE0/CJ0-C DRAM MODULE M53233200CE0/CJ0-C M53233200CE0/CJ0-C EDO Mode 32M x 32 DRAM SIMM Using 16Mx4, 4K Refresh, 5V GENERAL DESCRIPTION FEATURES , M53233200CE0/CJ0-C consists of sixteen CMOS 16Mx4bits DRAMs in SOJ packages mounted on a 72-pin glass-epoxy Samsung Electronics
Original
M53233200CE0-C M53233200CJ0-C M53233200CE0/CJ0 K4E640411C
Abstract: DRAM MODULE KMM53232004CK/CKG 4Byte 32Mx32 SIMM (16Mx4 base) Revision 0.0 June 1999 DRAM MODULE Revision History Version 0.0 (June 1999) · The 4th. generation of 64Mb DRAM components are applied for this module. KMM53232004CK/CKG DRAM MODULE KMM53232004CK/CKG KMM53232004CK/CKG EDO Mode 32M x 32 DRAM SIMM Using 16Mx4, 4K Refresh, 5V GENERAL DESCRIPTION FEATURES , KMM53232004C consists of sixteen CMOS 16Mx4bits DRAMs in SOJ packages mounted on a 72-pin glass-epoxy Samsung Electronics
Original
KMM53232004CK KMM53232004CKG
Abstract: DRAM MODULE M53233200BE0/BJ0-C 4Byte 32Mx32 SIMM (16Mx4 base) Revision 0.1 June 1998 DRAM MODULE M53233200BE0/BJ0-C Revision History Version 0.0 (Sept. 1997) · Removed two AC , . Version 0.1 (June 1998) · The 3rd. generation of 64M DRAM components are applied for this module. DRAM MODULE M53233200BE0/BJ0-C M53233200BE0/BJ0-C EDO Mode 32M x 32 DRAM SIMM Using 16Mx4, 4K , DRAMs in SOJ packages mounted on a 72-pin glass-epoxy substrate. A 0.1 or 0.22uF decoupling capacitor Samsung Electronics
Original
M53233200BE0-C M53233200BE0/EJ0 K4E640411B
Abstract: DRAM MODULE KM M53232004B K/B KG 4Byte 32Mx32 SIMM (16Mx4 base) Revision 0.0 Sept. 1997 ELECTRONICS DRAM MODULE Revision History Version 0.0 (Sept, 1997) · Removed two AC , - To aN DRAMs ELECTRONICS DRAM MODULE ABSOLUTE MAXIMUM RATINGS * Item Voltage on any pin , .) in A C CHARACTERISTICS. ELECTRONICS DRAM MODULE KM M53232004B K/B KG EDO Mode 32M X 32 DRAM SIMM Using 16Mx4, 4K Refresh, 5V GENERAL DESCRIPTION The Samsung KMM53232004B is a 32Mx32bits RAM -
OCR Scan
CACP
Abstract: Module (RoHS Compliant) Product Category 5: SDRAM/DRAM SIMM/DIMM Module Data Bus Width 32: x32 Module , SB5323285D8F6CG Description 32Mx32 (128MB), DDR, 100-pin DIMM, Unbuffered, Non-ECC, 32Mx8 Based, DDR266A, 30.48mm, 22 DQ termination. 32Mx32 (128MB), DDR, 100-pin DIMM, Unbuffered, Non-ECC, 32Mx8 Based, DDR266A, 30.48mm, 22 DQ termination, Lead-Free Module. 32Mx32 (128MB), DDR, 100-pin DIMM, Unbuffered, Non-ECC, 32Mx8 Based, DDR266A, 30.48mm, 22 DQ termination, Mixed Process Module. 32Mx32 (128MB), DDR, 100-pin Smart Modular Technologies
Original
SU5323285D8F6CU SM5323285D8F6CG DDR266B PC2100 SX5323285D8F6CG SG5323285D8F6CG
Abstract: : 3.3V, Synchronous DRAM Refresh / Power 4 : 4K Ref. / Standard Power Module Configuration F : 100 pin , 32Mx32 (128MB), SDRAM 100-pin DIMM, Unbuffered 16Mx8 Based, PC133, CL3, 29.72mm Revision History · , : +604-3992909 · Fax: +604-3992903 1 SM532328574F03R May 1, 2002 128MByte (32Mx32) Synchronous DRAM Module - 16Mx8 based 100-pin DIMM, Unbuffered Features · · · · · · · Standard Configuration Cycle Time , 2 SM532328574F03R May 1, 2002 Pin Name A0~A11 A0~A9 BA0, BA1 DQ0~DQ31 CLK0, CLK1 RAS# CAS Smart Modular Technologies
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RA-Z 4K/64 AMP-390213-1
Abstract: 4:1 53-577-302 577-302 or 302 DRAM The 7M9510SE comes with one 2Mx32 72 pin DRAM SIMM populated in the SIMM socket at location J5 for a total of 8MB of DRAM. If the DRAM SIMM is not mounted in the socket, please follow the instructions below. DRAM SIMM Notes DRAM SIMM sockets are keyed with , DRAM SIMM has a notch on one end to allow for this keying in the socket. The key/notch corresponds to pin 1 of the socket/SIMM. The SIMM sockets used on the 7M9510 are designed to have the SIMMs rotated Integrated Device Technology
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edo dram 72-pin simms 64mb pLSI 128MB 72-pin SIMM DB25 Breakout Board adapter Rs232 DB9 female schematic circuit for computer ssd disk IDT7M9710 4275/R00 7M9710 IDT7M9510SE 200MH IDT7M9502
Abstract: : DRAM SIMM / DIMM Module Data Bus Width 32 : x32 Module Address Depth 32 : 32M Device Data Width 3 : x16 , 32Mx32 (128MB), SDRAM 100-pin DIMM, Unbuffered 16Mx16 Based, PC133, CL3, 25.40mm Revision History · , : +604-3992909 · Fax: +604-3992903 1 SM532323578F63R April 30, 2002 128MByte (32Mx32) Synchronous DRAM Module - 16Mx16 based 100-pin DIMM, Unbuffered Features · · · · · · · Standard Configuration Cycle Time , SM532323578F63R April 30, 2002 Pin Name A0~A12 A0~A8 BA0, BA1 DQ0~DQ31 CLK0, CLK1 RAS# CAS# CKE0, CKE1 DQMB0 Smart Modular Technologies
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8K/64
Abstract: Module (RoHS Compliant) Product Category 5: SDRAM/DRAM SIMM/DIMM Module Data Bus Width 32: x32 Module , SB5323285D8F6CL Description 32Mx32 (128MB), DDR, 100-pin DIMM, Unbuffered, Non-ECC, 32Mx8 Based, DDR333B, 30.48mm, 22 DQ termination. 32Mx32 (128MB), DDR, 100-pin DIMM, Unbuffered, Non-ECC, 32Mx8 Based, DDR333B, 30.48mm, 22 DQ termination, Lead-Free Module. 32Mx32 (128MB), DDR, 100-pin DIMM, Unbuffered, Non-ECC, 32Mx8 Based, DDR333B, 30.48mm, 22 DQ termination, Mixed Process Module. 32Mx32 (128MB), DDR, 100-pin Smart Modular Technologies
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SU5323285D8F6CL SM5323285D8F6CL PC2700 SX5323285D8F6CL SG5323285D8F6CL
Abstract: SG532323FG8NZDB 32Mx32 (128MB), DDR2, 200-pin SO-DIMM, Unbuffered, Non-ECC, 32Mx16 Based, DDR2 , 32Mx32 (128MB), DDR2, 200-pin SO-DIMM, Unbuffered, Non-ECC, 32Mx16 Based, DDR2-533-444, 30.00mm, 22â , (128MB), DDR2, 200-pin SO-DIMM, Unbuffered, Non-ECC, 32Mx16 Based, DDR2-667-555, 30.00mm, 22â"¦ DQ , Preliminary 128MByte (32Mx32) DDR2 SDRAM Module - 32Mx16 Based 200-pin SO-DIMM, Unbuffered, Non-ECC , No. of sides : Single-sided Mating Connector (Examples) Horizontal : AMP - 1473150-4 200-pin Smart Modular Technologies
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SG532323FG8NZUU DDR2-400-333 PC2-3200 SG532323FG8NZDG PC2-4200 SG532323FG8NZIL
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