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QMS-026-01-SL-D-RA-MG Samtec Inc Board Connector, 52 Contact(s), 2 Row(s), Male, Right Angle, 0.025 inch Pitch, Solder Terminal, Guide Pin, Black Insulator, Receptacle, ROHS COMPLIANT
QSS-025-01-L-D-RA-MTI Samtec Inc Board Connector
QMS-026-02-S-D-RA-MG Samtec Inc Board Connector, 52 Contact(s), 2 Row(s), Female, Right Angle, 0.025 inch Pitch, Solder Terminal, Guide Pin, Black Insulator
QMS-078-01-SL-D-RA-MG Samtec Inc Board Connector, 156 Contact(s), 2 Row(s), Male, Right Angle, 0.025 inch Pitch, Solder Terminal, Guide Pin, Black Insulator, ROHS COMPLIANT
QMS-052-01-SL-D-RA-MG-K Samtec Inc Board Connector, 104 Contact(s), 2 Row(s), Male, Right Angle, Surface Mount Terminal, Plug, ROHS COMPLIANT
QSS-025-02-L-D-RA-MTI Samtec Inc Board Connector

"256k x 4" dram refresh

Catalog Datasheet MFG & Type PDF Document Tags
Abstract: .4 3. DRAM DATA SHEETS 256K-bits DRAM HY53C256. .256K HY53C464 64K lM -bits DRAM X X 1-b it. 4-bit. I HY531000. . 1M HY531000A. . 1M HY534256. .256K HY534256A 256K 4M-bits DRAM X X X X 1-bit. IFast 1 , . .256K HY51V4460B. .256K X X X X X X X X X X X X X X X X X X X X X X x x x X x 1 , . 523 DB101 -20-MA Y94 1 · HY U NDA I 16M-bits DRAM TABLE OF CONTENTS HY511610 0 -
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HY5118160 256K 4bit DRAM HY51426 HY514260 4K x 1 DRAM HY51V16100 256K- HY514100 HY514100A HY514100B HY51V4100B HY514400
Abstract: highlights Package outline dimension Packing 6.95 TlqwflS (Jet SIEMENS 256k X 16 DRAM ihig information , version runs In production. 2 SIEMENS 256k X 16 DRAM The SIEMENS parlnumber (or this version is HYB , production 1o the version with symmetrical addressing, 3 SIEMENS 256k X 16 DRAM LOW-POWER, EXTENDED & , lime the DRAM internal timer starts and a new row is refreshed. When the refresh pulse is generated by , been terminated, the user can access ihe DRAM normally. 4 SIEMENS 256k X 16 DRAM PACKAGE OUTLINE -
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HYB51471B Hall Siemens MARKING AOH 514171BJ/BJL 4171BJ/BJL CDAC19400-H/A
Abstract: / Access Time IBM0116405PT1D-60 EDO DRAM 16Mb 4M x 4 IBM0116405PT1D-70 EDO DRAM 16Mb , NOW NOW NOW NOW NOW NOW NOW N/A N/A N/A N/A N/A N/A N/A EDO DRAM 16Mb 2M x 8 , /A N/A IBM116165PT3D-70 EDO DRAM 16Mb 1M x 16 70ns 33 75 3.3V NOW N/A IBM118165PT3D-60 EDO DRAM 16Mb 1M x 16 60ns 40 205 3.3V NOW N/A IBM118165PT3D-70 EDO DRAM 16Mb 1M x 16 70ns 33 180 3.3V NOW N/A IBM116165T3D -
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TC59R1809 IBM025161LG5D60 gm72v16821 MD908 KM48S2020 GM72V1682 MB81141621 MB81141622 MB81G8322 MB81116421 16MEG MB81116422
Abstract: /-85 256k x 16 DRAM CAS/-Before-RAS Refresh Counter Test Cycle 023SbG5 00S5b43 311 â  24 SIEMENS HYB , SIEMENS HYB 514171B J/BJ L-60/-70/-80/-85 256k x 16 DRAM Ordering Information Type Ordering Code Package Description HYB 514171BJ-60 Q67100-Q727 P-SOJ-40/40 60 ns 256k x 16 DRAM HYB 514171BJ-70 Q67100-Q728 P-SOJ-40/40 70 ns 256k x 16 DRAM HYB 514171BJ-80 Q67100-Q729 P-SOJ-40/40 80 ns 256k x 16 DRAM HYB 514171BJ-85 Q67100-Q809 P-SOJ-40/40 85 ns 256k x 16 DRAM Truth Table RAS LCAS UCAS WE OE 1/01-1/08 1/01-1/016 Operation H -
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514171BJ-60/-70/-80/-85 514171BJL-60/-70/-80/-85 23SL0S
Abstract: SIEMENS H YB514171B J/B J L-50/-60/-70 256K x 16-DRAM WE UCAS LCAS AO AI A2 A3 A4 A5 A6 A7 A8 RAS Refresh , J L-50/-60/-70 256K x 16-DRAM i/o (Inputs) fos Data In I/O (Outputs) CAS/-Before-RAS Refresh , SIEMENS 256K x 16-Bit Dynamic RAM Low Power 256K x 16-Bit Dynamic RAM with Self Refresh Advanced , L-50/-60/-70 256K x 16-DRAM Ordering Information Type Ordering Code Package Description HYB ,   Electronic-Library Service CopyRight 2003 SIEMENS H YB514171B J/B J L-50/-60/-70 256K x 16-DRAM Pin Configuration -
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514171BJ-50/-60/-70 514171BJL-50/-60/-70 P-SOJ-40-1 16-DRAM E35L05 HYB514171B
Abstract: Cycle Semiconductor Group 17 HYB514171BJ/BJL-50/-60/-70 256K x 16-DRAM RAS-Only Refresh , Refresh Cycle Semiconductor Group 19 HYB514171BJ/BJL-50/-60/-70 256K x 16-DRAM CAS before RAS Self Refresh Cycle Semiconductor Group 20 HYB514171BJ/BJL-50/-60/-70 256K x 16-DRAM Hidden Refresh Cycle (Read) Semiconductor Group 21 HYB514171BJ/BJL-50/-60/-70 256K x 16-DRAM Hidden Refresh Cycle (Early Write) Semiconductor Group 22 HYB514171BJ/BJL-50/-60/-70 256K x 16-DRAM Siemens
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GPJ09018
Abstract: . TECHNOLOGY, INC. 256K, 512K x 32 DRAM SIMMs RAS#-ONLY REFRESH CYCLE 25 tRC tRAS tRP RAS# CAS , . TECHNOLOGY, INC. 256K, 512K x 32 DRAM SIMMs HIDDEN REFRESH CYCLE 18, 25 (WE# = HIGH) tRAS tRP tRAS , TECHNOLOGY, INC. 256K, 512K x 32 DRAM SIMMs MT2D25632(X) MT4D51232(X) DRAM MODULE FEATURES , 110ns 60ns 35ns 30ns 15ns 40ns xx = speed 256K, 512K x 32 DRAM SIMMs DM29.pm5 ­ Rev , without notice. ©1997, Micron Technology, Inc. TECHNOLOGY, INC. 256K, 512K x 32 DRAM SIMMs Micron Technology
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MT4D51232M-XX MT2D25632G- MT2D25632M- MT4D51232G- MT4D51232M- 72-PIN
Abstract:   blllSMI OOOSQ7S 012 H H R N MT12D88C25636 256K x 36, 512K x 18 IC DRAM CARD HIDDEN REFRESH CYCLE2 1 , 256K x 36, 512K x 18 IC DRAM CARD - " T IC DRAM CARD q 1 MEGABYTE 256K x 36, 512K x 18 NW E FEATURES PIN , megabyte, IC DRAM card organized as a 256K x 36 bit memory array. It may also be configured as a 512K x , low power opera­ tion using 256K x 4 low power, extended refresh DRAMs. These devices support -
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Abstract: refresh standard: 512 cycles every 64ms 1 MEGABYTE 256K x 36, 512Kx 18 N E W I I C DRAM CARD PIN , I^ IIC R D N M T12D 88C 25636 256K x 36, 512K x 18 IC DR AM CA R D IC DRAM CARD FEATURES · , GENERAL DESCRIPTION The MT12D88C25636 is a 1 megabyte, IC DRAM card organized as a 256K x 36 bit memory , retention mode. Standard component DRAM refresh m odes are supported as well. Multiple RAS inputs conserve , E W I C DRAM CARD NOTE: 1. D = 74AC11244 line drivers. 2. B1 through B4 = 256K x 9 memory blocks -
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jeida dram 88 pin C1992
Abstract: /-60 256K x 16-DRAM RAS-Only Refresh Cycle Semiconductor Group 18 HYB 514175BJ/BJL-50/-55/-60 256K x 16-DRAM CAS-Before-RAS Refresh Cycle Semiconductor Group 19 HYB 514175BJ/BJL-50/-55/-60 256K x 16-DRAM CAS before RAS Self Refresh Cycle (L-version only) Semiconductor Group 20 HYB 514175BJ/BJL-50/-55/-60 256K x 16-DRAM Hidden Refresh Cycle (Read) Semiconductor Group 21 HYB 514175BJ/BJL-50/-55/-60 256K x 16-DRAM Hidden Refresh Cycle (Early Write Siemens
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514175BJ 514175BJL-50/-55/-60 514175BJ/BJL
Abstract: i c n o N MT4LC16257(S) 256K X 16 DRAM RAS-ONLY REFRESH CYCLE (OE and WE = DON'T CARE , ADVANCE I^ IIC R O N MT4LC16257(S) 256K X 16 DRAM SELF REFRESH CYCLE (Addresses and OE = DON'T , ADVANCE |V |IC =RO N M T4LC16257(S) 256K X 16 DRAM DRAM FEATURES · In d u stry -stan d ard x l 6 pinouts, tim ing, functions and p ack ages 256K x 16 DRAM 3.3V, FAST PAGE MODE, OPTIONAL , > 1995, Micron Technology, Inc. ADVANCE |w iic = R a r s i MT4LC16257(S) 256K x 16 DRAM -
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T4LC16257S 40/44-P MT4LC16257IS CYCLE24
Abstract: M E N S HYB514171BJ/BJ L-50/-60/-70 256K X 16-DRAM Hidden Refresh C ycle (Early W rite) â , Low Power 256K x 16-Bit Dynamic RAM with Self Refresh Advanced Information Low Power dissipation , 0235b05 DDflfc.4fiS L7Q 5.96 SIE M E N S HYB514171BJ/BJ L-50/-60/-70 256K X 16-DRAM , P-SOJ-40-1 50ns 256 K x 16 DRAM HYB 514171BJ-60 Q67100-Q727 P-SOJ-40-1 60 n s256 K x 16 DRAM HYB 514171BJ-70 Q67100-Q728 P-SOJ-40-1 70 n s256 K x 16 DRAM HYB 514171BJL-50 on -
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235L05 256KX
Abstract: Technology, Inc. 256K, 512K x 32 DRAM SIMMs l ^ i c n o N RAS#-ONLY REFRESH CYCLE2 5 CBR , 256K, 512K x 32 DRAM SIMMs MICRON â  IbCHNULUÃY. INC MT2D25632(X) MT4D51232(X , , 512K x 32 DRAM SIMMs I^IICRON GENERAL DESCRIPTION The MT2D25632(X) and MT4D51232(X) are randomly , notice. ©1997, Micron Technology, Inc. 256K, 512K x 32 DRAM SIMMs MICRON I TECHNOLOGY. IN C , ». U1-U2 blllS41 256K, 512K x 32 DRAM SIMMs DM29.pm5 - Rev, 3/97 FAST PAGE MODE U1-U2 = MT4C1627DJ -
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Abstract: ) 256K x 16 DRAM The SELF REFRESH m ode is term inated by driving RAS HIGH for a m inimum time of *RPS , SELF REFRESH (MT4C16256/7 S only) NOTE: M T4LC16256/7(S) 256K X 16 DRAM N E W DRAM RAS H L L , ADVANCE m M T4LC16256/7(S) 256K x 16 DRAM RAS ONLY REFRESH CYCLE (ADDR = A0-A8; OE, WEL, WEH or , | UNDEFINED 1-254 ADVANCE MT4LC1 6256/7(S) 256K x 16 DRAM N E W DRAM SELF REFRESH CYCLE , ADVANCE M IC R O N MT4LC16256/7(S) 256K X 16 DRAM NE DRAM FEATURES · -
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C16256/7
Abstract: Page 99 IBM015160 IBM015161 256K X 16 DRAM Truth Table Address Function Standby Row Refresh , X 16 DRAM Refresh Cycle -40 Symbol Parameter Min. *CHR -50 Max. Min. 14 5 32 32 0 Max. Min , o Û o Ci Page 116 IBM015160 IBM015161 256K X 16 DRAM RE Only Refresh (ROR , Page 117 IBM015160 IBM015161 256K X 16 DRAM CE Before RE Refresh (CBR-With Mode Reset) Page , IBM015160 IBM015161 256K X 16 DRAM Features · 256K x 16 DRAM · Performance: Parameter Ir p -
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SOJ-40
Abstract: HYB 514171BJ-50/-60 256k X 16 DRAM SIEM ENS CA S -Before-RAS Seif Refresh Cycle Sem , n i 3 1 1998-10-01 TÃ0 HYB 514171BJ-50/-60 256k X 16 DRAM SIEM ENS Ordering Inform , -40-1 400 mil 50 ns 256k X 16 DRAM HYB 514171BJ-60 Q67100-Q 727 P-SOJ-40-1 400 mil 60 ns 256k X 16 DRAM Truth Table RAS LCAS UCAS We OE 1/01 -1 /0 8 1 /0 9 -1 /0 1 6 , 514171BJ-50/-60 256k x 16 DRAM SIEM ENS P-SOJ-40-1 ^ccC 1/01 c 1/02 C I/03C I/0 4 I 40 39 -
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514171BJ SPT03Q55
Abstract: # hold time (CBR REFRESH) WE# setup time (CBR REFRESH) 256K x 16 FPM DRAM W03.pm5 ­ Rev.3/97 -6 , DRAMs which require WE# HIGH at RAS# time during a CBR REFRESH. 256K x 16 FPM DRAM W03.pm5 ­ Rev , notice. ©1997, Micron Technology, Inc. 256K x 16 FPM DRAM TECHNOLOGY, INC. HIDDEN REFRESH , 256K x 16 FPM DRAM TECHNOLOGY, INC. MT4C16257 DRAM FEATURES · Industry-standard x16 , products or specifications without notice. ©1997, Micron Technology, Inc. 256K x 16 FPM DRAM Micron Technology
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MT4C16257DJ-6 MT4C16257DJ-6 pin out mt4c16257dj 40-PIN
Abstract: select for the 512K x 16/18 memory organization. DRAM OPERATION DRAM REFRESH Memory cell data is , , 512K x 20 IC DRAM CARD MICRON I » Tt-CHNfiL04iV.ini; RÃ"5-ONLY REFRESH CYCLE (ADDR = , S 1 3 3 544 * M R N MT12D88C25640 256K x 40, 512K x 20 IC DRAM CARD HIDDEN REFRESH CYCLE2 1 , R N MT12D88C25640 256K x 40, 512K x 20 ÌC DRAM CARD IC DRAM CARD 1 MEGABYTE 256K x 40 , DÛ27 21 The MT12D88C25640 is a 1 megabyte, IC DRAM card organized primarily as a 256K x 40 -
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X32/36/40
Abstract: PERSISTENT MASKED WRITE access cycle (M T 4C 16258/9 S only) 256K X 16 DRAM FAST-PAGE-MODE SELF REFRESH , . PRELIMINARY MICRON CBR REFRESH CYCLE (A0-A8; OE = DON'T CARE) M T 4C 16256/7/8/9 S 256K X 16 W IDE DRAM , W IDE DRAM |U |IC R O N M T 4C 16256/7/8/9 S 256K X 16 WIDE DRAM HIDDEN REFRESH CYCLE2 4 , PRELIMINARY ICRON M T 4C 16256/7/8/9 S 256K X 16 W IDE DRAM WIDE DRAM FEATURES · SELF REFRESH, or "Sleep M ode" · Industry-standard x l6 pinouts, timing, functions and packages · High-perform -
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3DDQ16 XDDQ13
Abstract: Group 209 SIEMENS HYB514171BJ/BJL-5Q/-60/-70 256K X 16-DRAM Hidden Refresh Cycle (Read , SIEMENS 256K X 16-Bit Dynamic RAM Low Power 256K x 16-Bit Dynamic RAM with Self Refresh HYB , P-SOJ-40-1 P-SOJ-40-1 P-SOJ-40-1 P-SOJ-40-1 P-SOJ-40-1 P-SOJ-40-1 Description 50ns 256 K x 16 DRAM 60 ns 256 K x 16 DRAM 70 ns 256 K x 16 DRAM 50 ns256 K x 16 DRAM 60 ns256 K x 16 DRAM 70 ns 256 K x 16 DRAM , Group 193 SIEMENS Absolute Maximum Ratings HYB514171BJ/BJ L-50/-60/-70 256K X 16-DRAM -
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siemens hyb514171BJ
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