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"2-30 mhz"

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Abstract: , Easy & Sensible! TRA9023 = PhantomTMAntenna Model, White, 902-928 MHz, 3 dB-MEG. TRA Blank 902 , Range Radome Height Gain Vending Data UHF 3 dB-MEG MODELS TRA4303 TRA4503 TRA4703 430-450 MHz 450-470 MHz 470-490 MHz 3.30" 3.30" 3.30" 3 dB-MEG* 3 dB-MEG* 3 dB-MEG* 800/900 MHz 3 dB-MEG MODELS TRA8063 TRA8213 TRA8903 TRA9023 TRA18503 TRA21303 TRA24003 806-866 MHz 821-896 MHz 890-960 MHz 902-928 MHz 1850-1970 MHz 2130-2200 MHz 2400-2500 MHz 2.30" 2.30" 2.30" 2.30" 2.30" 2.30" 2.30" 3 dB-MEG* 3 dB-MEG* 3 Antenex
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TRAB9023NP TRAB24003NP TRAB1500 TRA8903P TRAB1440 TRAB24003P TRAB1560 TRAB18503NP TRAB21303NP TRAB2200
Abstract: 43 dB Gain, 25 Watt Psat, 0.15 MHz to 230 MHz, High Power High Gain Amplifier, 48 dBm IP3, SMA , the 0.15 to 230 MHz frequency range. The amplifier offers 25 Watts typical saturated power and 43 dB , temperature range of 0°C and +50°C. Features â'¢ â'¢ â'¢ â'¢ 0.15 MHz to 230 MHz Frequency , Units 0.15 230 43 MHz dB Gain Flatness ±1.5 dB Input Power , MHz to 230 MHz, High Power High Gain Amplifier, 48 dBm IP3, SMA PE15A5028 PE15A5028 REV 1.0 1 Pasternack Enterprises
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Abstract: M H / 450-470 MHz 470-490 MHz i 30" 3.30" 3.30" 3 dB-MEG* 3 dB-MEG* 38.00 18.24 17.48 16.72 38.00 , -856 MH:' xr J3 -MEG TRA8213 TRA8903 TRA9023 TRA18503 TRA21303 TRA24003 821-896 MHz 890-960 MHz 902-928 MHz 1850-1970 MHz 2130-2200 MHz 2400-2500 MHz 2.30" 2.30" 2.30" 2.30" 2.30" 2.30" 3 dB-MEG* 3 dB-MEG , TRA21303N TRA24003N 902-928 MHz 1850-1970 MHz 2130-2200 MHz 2400-2500 MHz 3.30" 3.30" 3.30" 3.30" 3 dB-MEG , TRA4703P 430-450 MHz 450-470 MHz 470-490 MHz 3.30" 3.30" 3.30" 3 dB-MEG' 3 dB-MEG* 3 dB-MEG* 48.00 23.04 -
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1850-1970MHZ TRAB4503
Abstract: 43 dB Gain, 25 Watt Psat, 0.15 MHz to 230 MHz, High Power High Gain Amplifier, 48 dBm IP3, SMA , the 0.15 to 230 MHz frequency range. The amplifier offers 25 Watts typ of saturated power and a high , '¢ â'¢ 0.15 MHz to 230 MHz Frequency Range Psat 25 Watts typ Small Signal Gain: 43 dB min Gain , Compression Point 230 43 ±1.5 MHz dB dB +44 dBm +41.8 dBm Output , dB Gain, 25 Watt Psat, 0.15 MHz to 230 MHz, High Power High Gain Amplifier, 48 dBm IP3, SMA Pasternack Enterprises
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PE15A5028F
Abstract: UM10607 BGA7350 performance at IF=230 MHz Rev. 1 â'" 14 November 2012 User manual Document information Info Content Keywords Dual VGA. 28 dB attenuator range IF=230 MHz NXP Abstract This , , tuned for a IF of 230 MHz UM10607 NXP Semiconductors BGA7350 performance at IF=230 MHz , . 2 of 40 UM10607 NXP Semiconductors BGA7350 performance at IF=230 MHz 1. Introduction , . The single ended 230 MHz evaluation board (EVB) is designed for optimal performance in the 230 MHz NXP Semiconductors
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Abstract: 600 MHz. Typical Performance: VDD = 50 Vdc Frequency (MHz) Signal Type Pout (W) Gps (dB) 1.8â'"600 MHz, 300 W CW, 50 V WIDEBAND RF POWER LDMOS TRANSISTOR D (%) 87.5-108 (1,3 , (100 sec, 20% Duty Cycle) 300 Peak 27.0 71.0 Load Mismatch/Ruggedness Frequency (MHz , Result No Device Degradation 1.16 Peak (3 dB Overdrive) 1. Measured in 87.5â'"108 MHz broadband reference circuit. 2. Measured in 230 MHz narrowband test circuit. 3. The values shown are the minimum Freescale Semiconductor
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MMRF1316N MMRF1316NR1
Abstract: APPLICATION NOTE A wide-band class-A linear power amplifier (174 - 230 MHz) with two , 230 MHz) with two transistors BLV33 CONTENTS 1 ABSTRACT 2 INTRODUCTION 3 DESIGN OF , Note ECO7904 Philips Semiconductors A wide-band class-A linear power amplifier (174 - 230 MHz , final stages of TV-transposers in band III (174 - 230 MHz) a linear wideband power amplifier has been , : Table 1 FREQ. (MHz) GAIN (dB) INPUT IMPEDANCE () LOAD IMPEDANCE () 174 11.3 0.68 Philips Semiconductors
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hp778d pm5171 RESISTOR CR25 MGP990 2222-121 RESISTOR CR25 philips SCA57
Abstract: allowing wide frequency utilization from 1.8 to 600 MHz. ï'· Typical Performance: VDD = 50 Vdc, IDQ = 100 mA Pout (W) f (MHz) Gps (dB) D (%) Pulse (100 sec, 20% Duty Cycle) 1250 Peak 230 24.0 1250 CW 230 22.9 1.8â'"600 MHz, 1250 W CW, 50 V WIDEBAND RF POWER , Circuits (1) â'" Typical Performance Frequency (MHz) Signal Type Pout (W) Gps (dB) D (% , Mismatch/Ruggedness Frequency (MHz) 230 Gate A Signal Type VSWR Pulse (100 sec, 20 Freescale Semiconductor
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MMRF1306H MMRF1306HR5 MMRF1306HSR5 NI-1230H-4S NI-1230S-4S
Abstract: 90º HYBRID SURFACE MOUNT MODEL: SMQ-C11 100 - 230 MHz octave bandwidth FEATURES: Excellent , ) Frequency Package # 100 - 230 MHz Insertion Loss (dB) * Amplitude Unbalance Phase Unbalance , 90º HYBRID SURFACE MOUNT MODEL: SMQ-C11 100 - 230 MHz octave bandwidth Data @ 25ºC Coupling , 165 178 191 204 217 230 Frequency (MHz) S21 S31 0 S41 5 Isolation (dB) 10 15 20 25 30 100 113 126 139 152 165 178 Frequency (MHz Synergy Microwave
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Abstract: allowing wide frequency utilization from 1.8 to 600 MHz. ï'· Typical Performance: VDD = 50 Vdc, IDQ = 100 mA Pout (W) f (MHz) Gps (dB) D (%) Pulse (100 sec, 20% Duty Cycle) 1250 Peak 230 24.0 1250 CW 230 22.9 230 MHz, 1250 W CW, 50 V RF POWER LDMOS TRANSISTORS , (MHz) 230 Signal Type Pulse (100 sec, 20% Duty Cycle) >65:1 at all Phase Angles Pout , CW: Case Temperature 63ï'°C, 1250 W CW, IDQ = 100 mA, 230 MHz RJC 0.15 ï'°C/W Thermal Freescale Semiconductor
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Abstract: 600 MHz. 1.8â'"600 MHz, 150 W CW, 50 V WIDEBAND RF POWER LDMOS TRANSISTORS Typical Performance: VDD = 50 Vdc Frequency (MHz) Signal Type Pout (W) Gps (dB) D (%) 87.5â'"108 (1 , Mismatch/Ruggedness Frequency (MHz) Signal Type VSWR Pin (W) Test Voltage 98 (1) CW , (3 dB Overdrive) 1. Measured in 87.5â'"108 MHz broadband reference circuit. 2. Measured in 230 MHz narrowband test circuit. 3. The values shown are the minimum measured performance numbers across Freescale Semiconductor
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MRFE6VP5150N MRFE6VP5150NR1 MRFE6VP5150GNR1
Abstract: APPLICATION NOTE A wide-band class-A linear power amplifier (174 - 230 MHz) with 2 , 230 MHz) with 2 transistors BLV33F CONTENTS 1 ABSTRACT 2 INTRODUCTION 3 DESIGN OF THE , Philips Semiconductors A wide-band class-A linear power amplifier (174 - 230 MHz) with 2 transistors , TV-transposers in Band III (174-230 MHz) a linear wideband power amplifier has been designed with 2 transistors , corresponding typical gain, input and load impedance are given in Table 1: Table 1 FREQ. (MHz) GAIN (dB Philips Semiconductors
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philips resistor CR25 cr25 philips BZY 56 2222-809-05002 pm5171 philips tv schematic diagram PHILIPS ECO8005
Abstract: 1.8 and 600 MHz. 1.8â'"600 MHz, 300 W CW, 50 V WIDEBAND RF POWER LDMOS TRANSISTORS Typical Performance: VDD = 50 Vdc Signal Type Frequency (MHz) 87.5-108 Pout (W) Gps (dB) D (% , Load Mismatch/Ruggedness Frequency (MHz) Signal Type VSWR Pin (W) Test Voltage 98 (1 , % Duty Cycle) No Device Degradation 1.16 Peak (3 dB Overdrive) 1. Measured in 87.5â'"108 MHz broadband reference circuit. 2. Measured in 230 MHz narrowband test circuit. 3. The values shown are the Freescale Semiconductor
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MRFE6VP5300N MRFE6VP5300NR1 MRFE6VP5300GNR1
Abstract: . This value is defined as the insertion loss ae. The nominal frequency fN is fixed at 230,0 MHz without , Pass band ripple fN ± 1,950 MHz Relative attenuation arel ae = amin typ. Value 12,3 dB max. Limit 14,5 dB fN BW 4,3 MHz min. 230,0 MHz 3,9 MHz 0,8 dB max. 1,5 dB fN ± 3,0 MHz . fN ± 5,0 MHz 30 dB min. 18 dB fN ± 5,0 MHz . fN ± 10,0 MHz 47 dB min. 45 dB fN ± 10,0 MHz . fN ± 100,0 MHz 57 dB min. 50 dB VI TELEFILTER
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Abstract: 1000 Frequency MHz 10000 10 100 56N 1000 10000 18N InductancenH 100 0.1 Frequency MHz , 500MHz (*300MHz) Q Min. 500 MHz 7.0 7.0 7.0 7.0 9.0 9.0 9.0 9.0 10.0 10.0 10.0 10.0 10.0 10.0 10.0 10.0 , ;±0.2nH, Q Typical 100 300 500 800 1000 1800 2400 MHz MHz MHz MHz MHz MHz MHz 4.0 9.0 11.0 15.0 18.0 25.0 , 8.0 11.0 13.0 13.0 12.0 - - S;±0.3nH, T;±3%, J;±5% S.R.F. (MHz) Min. 13000 13000 13000 13000 13000 TOKO
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LLS0603-FH HE-24 HE-12 500MH 300MH 013GH
Abstract: 100 1000 10000 0 10 100 1000 Frequency MHz 10000 Frequency MHz continued on next page , Tolerance 500MHz (*300MHz) Q Q Typical Min. 500 100 300 500 800 1000 MHz MHz MHz MHz MHz MHz 7.0 4.0 9.0 , ;±0.2nH, S;±0.3nH, T;±3%, J;±5% 1800 MHz 25.0 25.0 25.0 25.0 31.0 31.0 31.0 31.0 31.0 31.0 31.0 31.0 31.0 , 2400 MHz 34.0 34.0 34.0 34.0 37.0 38.0 38.0 38.0 38.0 38.0 38.0 38.0 38.0 38.0 37.0 37.0 37.0 37.0 37.0 , 36.0 35.0 34.0 34.0 33.0 32.0 30.0 27.0 27.0 25.0 18.0 13.0 - - - - S.R.F. (MHz) Min. 13000 13000 13000 TOKO
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LLS0603-FH2N5C LLS0603-FH2N6C LLS0603-FH2N7C LLS0603-FH2N8C LLS0603-FH2N9C LLS0603-FH3N0C
Abstract: MHz 1.0 / B, C, S 1.1 / B, C, S 10.0 10.0 1.2 / B, C, S 1.3 / B, C, S 10.0 10.0 Q Typical 100 MHz 6.0 S.R.F. (MHz) Min. RDC () Max. RDC () Typ. IDC (mA) Max. 13000 13000 0.14 0.14 0.08 0.10 0.10 300 300 300 MHz 500 MHz 800 1000 1800 2400 MHz MHz MHz MHz 6.0 6.0 11.0 11.0 11.0 14.0 14.0 14.0 19.0 19.0 19.0 22.0 22.0 TOKO
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LLS0603-FH1N3C LLS0603-FH1N5C LLS0603-FH22NJ LLS0603-FH1N8C LLS0603-FH1N6C LLS0603-FH1N2C H27NJ LLS0603-FH33NJ LLS0603-FH39NJ LLS0603-FH47NJ LLS0603-FH56NJ LLS0603-FH68NJ
Abstract: 1.8 and 600 MHz. 1.8â'"600 MHz, 300 W CW, 50 V WIDEBAND RF POWER LDMOS TRANSISTORS Typical Performance: VDD = 50 Vdc Signal Type Frequency (MHz) 87.5-108 Pout (W) Gps (dB) D (% , Load Mismatch/Ruggedness Frequency (MHz) Signal Type VSWR Pin (W) Test Voltage 98 (1 , % Duty Cycle) No Device Degradation 1.16 Peak (3 dB Overdrive) 1. Measured in 87.5â'"108 MHz broadband reference circuit. 2. Measured in 230 MHz narrowband test circuit. 3. The values shown are the Freescale Semiconductor
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Abstract: Frequency 45 40 1N5 35 30 Q 25 20 15 10 5 0 10 100 1000 Frequency MHz 10000 InductancenH 100 18N 56N 10 100 1000 10000 0.1 Frequency MHz continued on next page Multilayer Chip , / T, J 22nH / T, J 27nH / T, J * 33nH / J * 39nH / J * 47nH / J Q Min. 500 MHz 10.0 10.0 10.0 10.0 , 12.0 11.0 11.0 11.0 11.0 11.0 9.0 9.0 9.0 Q Typical 100 MHz 6.0 6.0 6.0 6.0 6.0 6.0 6.0 6.0 6.0 7.0 7.0 7.0 7.0 7.0 7.0 7.0 7.0 7.0 7.0 7.0 7.0 8.0 8.0 8.0 8.0 8.0 8.0 8.0 8.0 8.0 8.0 8.0 8.0 300 MHz 11.0 TOKO
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16196C 2400MH E4991A 8719D 8720D
Abstract: 600 MHz. 1.8â'"600 MHz, 150 W CW, 50 V WIDEBAND RF POWER LDMOS TRANSISTORS Typical Performance: VDD = 50 Vdc Frequency (MHz) Signal Type Pout (W) Gps (dB) D (%) 87.5â'"108 (1 , Mismatch/Ruggedness Frequency (MHz) Signal Type VSWR Pin (W) Test Voltage 98 (1) CW , (3 dB Overdrive) 1. Measured in 87.5â'"108 MHz broadband reference circuit. 2. Measured in 230 MHz narrowband test circuit. 3. The values shown are the minimum measured performance numbers across Freescale Semiconductor
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5/2014S
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