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Part : RSPM20-4T14T1SV9HHS999.9.99 Supplier : Hirschmann Electronics Manufacturer : Newark element14 Stock : - Best Price : $613.2000 Price Each : $663.0300
Part : FH40-60(30)SB-1SV(99) Supplier : Hirose Electric Manufacturer : Heilind Electronics Stock : - Best Price : - Price Each : -
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"1SV 90" Datasheet

Part Manufacturer Description PDF Type
1SV90 N/A Shortform IC and Component Datasheets (Plus Cross Reference Data) Scan
1SV90A N/A Shortform IC and Component Datasheets (Plus Cross Reference Data) Scan
1SV90A N/A Basic Transistor and Cross Reference Specification Scan

"1SV 90"

Catalog Datasheet MFG & Type PDF Document Tags
Abstract: .44 ;e.;t ;0 ;fJ. ;In . . ;out . . VHF Comm;Po 100Wmin,Gp 7.0dBmin,ZIn .90 j1.1,ZcI3.4 j2.9 at 136MHz,28V , 6.0dBmin,Zin 1.5-j.90,Zcl .50-j1.0 at 175MHz,12V;Pd 270W HF Comm;Po 100Wmin,Gp 10dBmin at 30MHz,12.5V;Pd , 0 1 ; ceo ; eo; c m; c m, z min; J UHF Amplifier;Vcbo 1SV;Vceo 10V;Vebo 3V;lc 50mA;Pc 200mW;fT , UHFIVHF Amplifier;Vcbo 20V;Vceo 1SV;Vebo 3V;lc 100mA;Pc 600mW;hFE 200max;f't 4.4GHztyp UHFIVHF Amplifier , 3V;lc 20mA;Pc 1S0mW;fT SSOMHz typ;hFE 200 max VHF Amplifier;Vcbo 1SV;Vceo 12V;Vebo 3V;lc 20mA;Pc Space Power Electronics
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TIS43 Unijunction Transistor acrian RF POWER TRANSISTOR motorola s200 hFE-200 to-92 npn 12v 50w class t amplifier acrian S01080-2 S01115-2 S01127 S01143-1 S01219-5 S01222-6
Abstract: INFORMATION1 T.marc V.JHAX 1Sv> PACXMC OKRATMO TEMPERATURE RANK CSAOP 14-MN LCC »CONTACT PLASTIC 2S , 0.12 - - 0.12 - - 0.12 - pA/y/nT input Manege Range IVB V+-+SV.V-0V Vs-±1SV 0/3.5 -1S/13.5 . _ 0 , ±15V -isvsVcMsmv S3 S3 100 100 â'" «0 SO 86 96 â'" 76 76 90 90 â'" dB Power Supply Rejection Ratio PS RR VS- , (Four Amplifiers) 'er V»-±2.5V,NoLoed Vs-±1SV, No Load _ 140 330 200 390 â'" 170 360 300 460 _ 200 , +-+5V.V-0V. 78 78 73 73 92 92 73 73 88 86 Common-Mod* Ruction Ratio CMW Vs-±1SV, -ISVSVcmS 13.2V 96 - -
OCR Scan
OP-420 OP420BY OP420GP OP420GS rc8u 420-G 420H OP42 OP420CV OP420CRCM3 OP4206Y
Abstract: ; CL = CL1 = CL2 = 33pF 2. V|NH -1SV RISETIME (1.5V to 13.5V) < 20ns FALLTIME (13.5V lo 1.5V) < 20ns , PACKAGE MATERIAL: Ceramic, 90% Alumina PACKAGE SEAL: Material: Glass Frit Temperature: 450°C ± 10 , Specified: v+ = +15V, v- = -isv, ta = +2500 rDSÃON) vs. Vd and temperature V* V- â  *16V â -1SV , *1SV. V-»-1SV 8 V* â  â'¢I-1BV, V- = -1«V C V- - -7-5V 0 Vt = «-5V. V* â  +SV -10 +10 »15 VQ - DRAIN VOLTAGE (VOLTS) OFF ISOLATION vs. FREQUENCY V+-+1SV, V- » -15 V ClOAO"3pF ^S=1VRM8 -
OCR Scan
DG307 106IC VIA VT 2021 HI-307/QQ3 H1-307/883 HI-307/883 HI-307 HI-300
Abstract: Source to GND 1 +25°C - 28 PF Driver Input Capacifance CC1 VA = 0V 1 +25°C - 10 PF Cc2 VA = 1SV 1 , rL2 â  sonn; CL= ClI = C|_a => 33pF 2. V,NH - 15V RISETIME (1.SV lo 13.5V) < 20ns FALLTIME (13.5V tà , LEAD MATERIAL: Type B LEAD FINISH: Type A PACKAGE MATERIAL: Ceramlc, 90% Alumina PACKAGE SEAL: Material , "DS(ON) vs. VD AND TEMPERATURE il gs Vt V- â â™¦1SV -1SV I2HC ' WL Vq - , . FREQUENCY - 1*K 19? IH I-FREQUENCY (Kt) IQ(ON) vs. TEMPERATURE* - V+«1SV - V-"-18V -|vol-N -
OCR Scan
ic 307 ex HT-307 T-51-11 HI-307/
Abstract: '" 5V + 0.»V> / 90% -V K.50% â'" â'¢Â»Â»I* 1â'"tEN«M) UV / 0171-7 Figure 5: ton and toff , »CHANNEL MOSFET IS OFF (a) OVERVOLTAGE WITH MUX POWER OFF -15v +1sv -1sv N-CHANNEL MOSFET IS TURNED ON , Cffi m D â¡ o + 1sv 0171-14 Figure 9: Detailed Channel Switch Schematic Ta â'¢ + 25 , ±WV ±1SV 0171-19 Figure 14: ros -
OCR Scan
IH5208 HI509A IH5208MJE a006 mosfet fully protected p channel mosfet cmos cookbook a006 2000Q IHS043
Abstract: 70MA20 T c = 25 0 c TEST CONDITIONS ic = 1OO mA V c e = 1SV V c b = 1SV V c e = 1SV V cb = 1O V V c e = 1SV V c e = 1SV Ic = 2S mA Ic = 2S mA Ic = 1S mA f = 1.O MHz f = 4.O GHz f = 4.O GHz MINIMUM 3O -
OCR Scan
2N6679 SOT-100 sot100
Abstract: Rejection Ratio V~ + 3V , derated using a thermal resistance of 150'C/W (unction to ambient for the H package, 90'C/W for the N, J , Bias Current 10 -50 = VSȃ1SV - VkjoOV n 0 SO -
OCR Scan
500 va inverter diagrams 4qsc 118/LM6218 LM6118 VH/10254-2 LM6118H LM6218AH
Abstract: 5.50 B 20-23 f ^ ^ C A S E n M\ 1If DIM: 4.5 - 9.0 B 1.25" x 0.80" x 0.52" (31.75 , 9.0 55 62 63 40 50 55 50 50 76 80 80 80 79 79 85 80 81 82 80 80 81 64 71 70 65 66 61 68 67 66 67 59 , 78 82 78 78 75 80 82 84 85 86 80 82 84 80 80 75 80 82 84 85 86 80 82 84 81 81 75 82 83 84 85 90 82 83 , ii \ u i s II l i W M U N M 4.5 - 9.0 D DIM: 1.00''X 2.00" x 0.40" (25.40) x (50.80) x , +15V/+1.0A +S/±I2V # +3.8/±0.31A +5/+1SV (8 +3.«/±0.25A +12/±SV@+1.5/+1.0/-1.0A 18-72 5V/5.0A -
OCR Scan
BRS515 BWS2405 XWD4805-12 frs2405 OWD2412 RWD2412 RWD2405 QED2405 OWD2415 I2V/250 CRS505 CRS512 CRS515 CRD512 CRD515
Abstract: 90 dB CMRR Common-mode rejection ratio Over temp. 70 90 dB 1.4 2.8 1.4 2.8 mA , rejection ration 70 90 dB v|n Input voltage range Over temp. ±12 ±13 V Rin Input resistance 0.3 2.0 , 2s°c 10 100 IK 10K FREQUENCY â'" Hi g 10-21 Vs-±1SV TA-25PC Ul s , Various Bandwidths 1 VS.±1SV I -i- 10-10flkHi 10-1kHz 10-lkH: 1K 10K SOURCE RESISTANCE â , .±1SV - \ T« \ V \ \ 10 100 1K 10K -
OCR Scan
1A741N 1A741CN SA741CN ha741 LA741 na741 a741 dip A741/ C/SA741C 0404B
Abstract: /-1SV + /- 9V 160 mA 15B0909 +/-1SV ± 9V ± 80 mA 15A12 +/-1SV + /- 12V 120 mA 15B1212 +/-15V ± 12V ± 60 mA ISA) 5 +/-1SV + / - 1 SV 100 mA 15B1515 +y-15V ± 15V ± 50 mA 15A24 +/-1SV + /-24V 60 mA -
OCR Scan
15A09 24A05 24A12 24A15 24A24 24A28 ksl microdevices 05B1212 05A24 150MQ500VDC MIL-STD-883B 15B2424
Abstract: 05E12 + /-5V +/-12V 250 mA 05E1212 + /-5V ±I2V ± 125 mA OSE 15 + /-SV +/-1SV 200 mA 05E1515 + /-5V  , /- 5V 600 mA 15E0505 + /-15V ± 5V ± 300 mA 15E09 + I-1SV + /- 9V 300 mA 15E0909 + /- 15V ± 9V ± 150 mA 15E12 +/-ISV + /- 12V 250 mA 1 SEI 212 +/-15V ±12V ± 125 mA 15E15 +/-I5V +/-1SV 200 mA 15E1515 +/-15V ±I5V ±100 mA I5E24 + /-I5V + /-24V 120 mA 15E2424 +/-15V ±24V ± 60 mA 15E28 + /-1SV + , ± 9V ± 150 mA 48EI2 +/-48V + /-12V 250 mA 48E1212 + /-48V ±I2V ± 125 mA 48E15 +/-48V +/-1SV 200 -
OCR Scan
dc-dc -28V 48v to 24V converter 12E0909 05E28 05E0909 05E09 150M0500VDC 1SE05 15E2828
Abstract: ±10V, (Figure 3) Ta = 25°C 90 90 ns tON-tOFF Break-Before-Make y S- -10V, (Figure 3) Ta = 25°C 80 80 , Current All Switches "OFF," Vs= ± 10V Ta = 25°C 4.5 6.0 7.0 9.0 mA 6.3 9.0 9.8 13.5 mA Note 1 , junction temperature and are derated at ±100°C/W. Note 3: Unless otherwise specified, Vcc= +1SV, VEE , 1 1 1 1 ♦Vcc '15V -VtE » -1SV , .0 50 100 TEMPERATURE ("C) 6.0 40 20 0 2.0 4.C ANALOG CURRENT (mA) +Vcc'15V.-VeE=-1SV TIME MEASURED -
OCR Scan
LF11331 LF13331 LF11332 LF13332 LF11333 LF13333 LF13333N LF13331N SG-11b
Abstract: SPECIFICATIONS Input Resistance 250 -9 63 90 - VIN 10Vp-p' ~ 2kl! = Rl Bandwidlh ~V'N , .-. 0.15 TA=+12SDC - OBS CHARACTERISTICS at Vs = :!:1SV. 0° SYMBOL Slew Rate , Drift with Temperature """"""""-"' 18 '-.'. . 35 mV . . 100 - 90 170 p.v;oC 75 - 30 90 nA - VIV - 0.9902 otherwise IIIIN 90 5 - , mm. 2.23 Iq. mm) WAFER TEST LIMITS at Vs= :!:1SV. j= 25°C, unless otherwise noted, T PARAMETER Analog Devices
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BUF03BJ BUF03FJ BUF-03FJ LTPK PMI BUF03 BUFO3AJBUF03EJ BUF-03 SUF-03 2N2222
Abstract: Voltage Swing RL>2kt2 ±10 ±10 V Power Consumption Vg =±1SV Ta = +1250C TA = -550C 90 120 150 200 90 120 150 200 mW MATCHING CHARACTERISTICS (VCC - ±1SV, TA = 250C unless otherwise specified , Rate (unity gain) RL > 2ki2 0.5 0.5 V/jjs Channel Separation {Gain = 100) f = 10kHz Rs = Ikfi 90 90 dB Unity Gain Bandwidth (Gain = 1) 2.5 3.0 2.0 3.0 MHz The following specifications apply , 1.5 2.0 1.0 V/m s Channel Separation -90 -90 -125 dB Noise Voltage VN 10 2.0t 1.4t -
OCR Scan
RC4558T RC4558NB RM4558DE RC4739 f 4558 operational amplifier 4558 schematic diagram 4558 pin function f 4558 RS 4558 4558 CHIP RM4558 RC4558 ITO-99 RM4558T
Abstract: Current ® 90 â'¢lm Clamped Inductive Load Current @ Tj = +125°C © 60 Earv Reverse Voltage , DES71DT â¡â¡â¡â¡flflü 7T0 â  AVP 90 w LU 80 CC Q. 70 S < I- 60 Z UJ 50 cr cc =3 , Output Characteristics (Tj = 25°C) 90 jjâ'"i SE-1 1, 1C & 1 5V fW , , COLLECTOR-TO-EMITTER VOLTAGE (VOLTS) Figure 2, Typical Output Characteristics (Tj = 150°C) 90 VCE, COLLECTOR-TO-EMITTER VOLTAGE (VOLTS) Figure 4, Typical Output Characteristics @ VGE = 1SV 80 10 -
OCR Scan
APT45GF60BN Thyristor BT 102 000D A 03e t71 thyristor
Abstract: + /-5V ± 12V ± 60 mA 05AI5 + /-SV +/-1SV 100 mA 05B1515 + /-5V ± 15V ± 50 mA 05A24 + /-5V +/-24V , /-12V ± 1SV ± 50 mA 12A24 +/-12V + /-24V 60 mA 12B2424 +/-12V ± 24V ± 30 mA 12A28 +/-12V + /-2SV 50 , 15A09 +/-1SV + /- 9V 160 mA 15B0909 +/-15V ± 9V ± 80 mA 15A12 +/-15V + /- 12V 120 mA 15B1212 + /- 15V ± 12V ± 60 mA 15A15 +/-15V + / - 1 SV 100 mA 15B1515 +/-15V ± 1SV ± 50 mA 15A24 +/-15V + /-24V 60 mA 15B2424 +/-15V ± 24V ± 30 mA 15A28 +/-I5V + /-28V 50 mA 15B2828 +/-1SV ± 28 V ± 25 mA 24A05 -
OCR Scan
48A05 48A24 05A09 12A05 05B0909 J-24V 24B0505 24A09
Abstract: handling capability of ± 1SV. These switches also feature high switching speeds and low Ron- The ADG221 , unipolar (0V to 15V), the switches can be operated from a single -I- 1SV supply. 3. Low Leakage: Leakage , Drift Ron Match ±15 ±15 60 90 145 20 0.5 5 ±15 ±15 60 90 145 20 0.5 5 ±15 ±15 60 90 145 20 0.5 5 , \ Voo vm -+1SV -ov A -J \ -20 -IB -10 - s 0 +g +10 +1« +20 VD (Vs) â'" Volt* /?CW , ) Vdd Vss Idd Iss Delay time between the 50% and 90% points of the digital input and switch "ON" -
OCR Scan
DG221 ADG222 ADG221KN ADG221KR N-16 ADG221/ADG222 AOG222
Abstract: voltage range Power consumption Channel separation R s , 800 ± 12 ±10 20 15 ±30 ±30 150 70 5.6 ±12 0.3 170 30 90 2.3 ±13 1 70 120 25 170 5.6 150 Max 6.0 7.5 , Power consumption Channel separation Rs < 1 0 k f i 70 30 90 2.3 ± 12 0.3 ±13 1 70 120 25 Mn , Temperature Vs * 1SV Power Consumption as a Function of Ambient Temperature Output Voltage Swing as a , Gain as a Function of Frequency Open-Loop Phase Response as a Function of Frequency \ 1SV rA » -
OCR Scan
MC1458 SA1458D MC1558 MC1458 pin configuration mc1458 equivalent MC1458N signetics MC1558 signetics MC/SA1458/M MC1458/SA1458/MC1558 MC1458D MC1458N
Abstract: 2.2 - V VQE - 1SV. ic = 6oa - 1.7 - Vqe = 15V, lC = 3fA, Tj - 150°C AVQE(th) Gâte Threshold , Total Gate Charge (turn on) 40 62 90 le = 31A, Vce = 480V Oge Gate-to-Emitter Charge (turn-on) 5 10 15 , «r Rise Time - 90 - nS â'¢d(off) Turn-Off Delay Time - 1246 - tf Fall Time - 556 - eon Turn-On , " ,10" VSE TOP 1SV 10V o.ov 7. 0\ 6.0* S.SV BOtTOH 9.0V , Losses Vs. Collector-to-Emltter Current ©- r-vgo% 110% t_ VC-p- u 90%-'- (EtS = Eon+Eoff) . -
OCR Scan
IRGBC46 RGBC4 VQE 22 vqe 22 d SS452 RGBC46
Abstract: . ELECTRICAL PERFORMANCE CHARACTERISTICS Device Tested at: +VguPPiy = +1SV, -VguPPLY = -15V, GND = OV, Unless , +1SV. -VSUPPLY = -15V, GND = OV, Unless Otherwise Specified PARAMETERS SYMBOL CONDITIONS NOTE , B LEAD FINISH: Type A PACKAGE MATERIAL: Ceramic, 90% Alumina PACKAGE SEAL: Material: Glass Frit , . temperature* 10.0 p - V+-1SV - v-'-1SV - |Vo 1 = |Vsl = -â'" -
OCR Scan
DG384 HI-384/883 H11-3B4/8S3 HI-311 HI-330 HI-390
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