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"15 GHz" power amplifier 41dBm

Catalog Datasheet MFG & Type PDF Document Tags
Abstract: Description The NPA1006 NPA1006 is a wideband GaN power amplifier optimized for 20-1000 MHz operation. This device has been designed for saturated and linear operation with output power levels to 15W (41.8 dBm) in an , ) Figure 6: Performance vs. Frequency (POUT = 41dBm) 90 Power Added Efficiency (%) 16 15 Gain , NPA1006 NPA1006 Gallium Nitride 28V, 15W, 20-1000 MHz Amplifier Built using the SIGANTIC® process - A , Small-signal Gain - 14.8 - dB PSAT Saturated Output Power - 42 - dBm SAT ... Nitronex
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9 pages,
1504.64 Kb

NPA1006 TEXT
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Abstract: High Power Amplifier Module 10 – 3000MHz, 22dB, 10 Watts AM003040SF-2H AM003040SF-2H January 2011 REV 4 DESCRIPTION AM003040SF-2H AM003040SF-2H is an ultra-broadband High Power Amplifier designed for instrumentation , design from 10 to 3000MHz • Instrumentation • High Gain and High Power, Psat = 41dBm , watts (40dBm) CW output power and 22dB small signal gain. The module has a built-in DC voltage regulator and a negative voltage generator. It can be biased from a 24V to 28V single supply. The amplifier ... AMCOM Communications
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4 pages,
96.57 Kb

AM003040SF-2H TEXT
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Abstract: MAGX-011087 MAGX-011087 GaN Wideband Power Amplifier, 28 V, 15 W 20 - 1000 MHz Features    ï , RFOUT / VD Input Match RFIN Description The MAGX-011087 MAGX-011087 is a wideband GaN power amplifier , ://www.macomtech.com/content/customersupport MAGX-011087 MAGX-011087 GaN Wideband Power Amplifier, 28 V, 15 W 20 - 1000 MHz , -011087 GaN Wideband Power Amplifier, 28 V, 15 W 20 - 1000 MHz Preliminary - Rev. V1P Absolute Maximum , ://www.macomtech.com/content/customersupport MAGX-011087 MAGX-011087 GaN Wideband Power Amplifier, 28 V, 15 W 20 - 1000 MHz ... M/A-COM
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9 pages,
1469.19 Kb

MAGX-011087 TEXT
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Abstract: Gallium Nitride MMIC 12W 2.0 – 6.0 GHz Power Amplifier AM206541TM-SN AM206541TM-SN May 2014 Rev 1 DESCRIPTION AMCOM’s AM206541TM-SN-R AM206541TM-SN-R is a broadband GaN MMIC power amplifier. It has 26dB gain, and 41 dBm output power over the 2.0 to 6.5GHz band. The AM206541TM-SN-R AM206541TM-SN-R is in a ceramic package with a flange and straight RF and DC leads for drop-in assembly. Because of high DC power dissipation, good heat sinking is , ‚· Broadband from 2.0 to 6.5GHz  Instrumentation  Saturated output power Psat is 41dBm ï ... AMCOM Communications
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5 pages,
309.45 Kb

AM206541TM-SN TEXT
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Abstract: 9001:2008 Certified Section 7 - Module Summary Tables 1) Universal Power Amplifier Modules  ï , , MD 20879 AMCOM Communications, Inc. ISO 9001:2008 Certified 3) Connectorized Power Amplifier , categorized below: • Technology base: 1) GaN HEMT/SiC (for high output power); 2) GaAs PHEMT (for good , to 40W 2) MMIC power amplifiers (based on GaN/SiC HEMT, GaAs FET, GaAs PHEMT): wideband 10KHz-17GHz , shifters, attenuators, and bias tees 5) Custom design: MMIC power amplifiers, module power amplifiers, and ... AMCOM Communications
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18 pages,
1025.05 Kb

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Abstract: RFHA5966A RFHA5966A RFHA5966AX RFHA5966AX Band 10W High Power Amplifier GaAs MMIC X BAND 10W HIGH POWER AMPLIFIER GaAs MMIC Die Size: 4500m x 4000m VD1 VD2 Features      20dB Gain +41dBm Saturated Output Power 40% Power Added Efficiency 100% On Wafer DC and RF Testing 100% Output Power Testing RF Input RF Output VG1 VG2 Applications  ESCAN Radar , performance X-Band Gallium Arsenide Monolithic Amplifier. It has a 41dBm PSAT at 9.5GHz and is well suited ... RF Micro Devices
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8 pages,
1396.07 Kb

MMIC X-band amplifier RFHA5966A RFHA5966AX TEXT
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Abstract: RFHA5966AX RFHA5966AX Band 10W High Power Amplifier GaAs MMIC RFHA5966A RFHA5966A X BAND 10W HIGH POWER AMPLIFIER GaAs MMIC Die Size: 4500m x 4000m VD1 VD2 Features 20dB Gain +41dBm Saturated Output Power 40% Power Added Efficiency 100% On Wafer DC and RF Testing 100% Output Power Testing ESCAN , stage, high efficiency, high performance X-Band Gallium Arsenide Monolithic Amplifier. It has a 41dBm , RFHA5966AS2 RFHA5966AS2 X Band 10W High Power Amplifier GaAs MMIC 2-Piece Sample Bag Optimum Technology Matching ... RF Micro Devices
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8 pages,
717.97 Kb

x-Band Hemt Amplifier 10Ghz RF Power 10w amplifier 95GHZ "15 GHz" power amplifier 41dBm MMIC X-band amplifier RFHA5966A GAAS FET AMPLIFIER x-band 10w 4500m 1n4148 die RFHA5966AX RF Power Amplifier 125KHz TEXT
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Abstract: The TriQuint TGA4530 TGA4530 is a High Power Amplifier MMIC for 17 ­ 21GHz applications. The part is designed using using TriQuint's proven standard 0.25 um power pHEMT production process The TGA4530 TGA4530 nominally provides 29 dBm saturated output power at the 1 dB compression point and 41dBm OTOI for bias of , TGA4530-SM TGA4530-SM 17 - 21 GHz High Output TOI Packaged Amplifier Key Features · · · · · · · · Frequency Range: 17 - 21 GHz 41dBm Nominal Output TOI 21 dB Nominal Gain 29 dBm Nominal P1dB 12 dB ... TriQuint Semiconductor
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16 pages,
765.22 Kb

TriQuint TGA4530 RO4003 "15 GHz" power amplifier 41dBm 52E5 TGA4530-SM TEXT
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Abstract: Sat-Com Product Description The TriQuint TGA4530 TGA4530 is a High Power Amplifier MMIC for 17 ­ 21GHz applications. The part is designed using using TriQuint's proven standard 0.25 um power pHEMT production , Advanced Product Information September 14, 2006 17-21 GHz High Output TOI Packaged Amplifier , TOI (dBm) Frequency Range: 17 - 21 GHz 41dBm Nominal Output TOI 21 dB Nominal Gain 29 dBm , 4.0 x 4.0 x 1.2 mm The TGA4530 TGA4530 nominally provides 29 dBm saturated output power at the 1 dB ... TriQuint Semiconductor
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16 pages,
659.43 Kb

TGA4530 RO4003 41dBm "15 GHz" power amplifier 41dBm TGA4530-SM TEXT
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Abstract: (dB) Gain IRL ORL · Product Description The TriQuint TGA4530 TGA4530 is a High Power Amplifier MMIC for 17 ­ 21GHz applications. The part is designed using using TriQuint's proven standard 0.25 um power , power at the 1 dB compression point and 41dBm OTOI for bias of 6V, 825mA. The typical gain is 22dB. The , Advanced Product Information September 5, 2006 17-21 GHz High Output TOI Packaged Amplifier Key Features · · · · · · · · TGA4530-SM TGA4530-SM Frequency Range: 17 - 21 GHz 41dBm Nominal Output TOI ... TriQuint Semiconductor
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16 pages,
657.04 Kb

TEXT
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Archived Files

Abstract Saved from Date Saved File Size Type Download
duplexer. A typical Power amplifier has an output thermal noise power spectral density in the when the envelope modulation of transmited power leaks from the power amplifier to the LNA is assumed that the power amplifier output power is +28dBm and the RX to TX duplexer to establish a practical specification for a low noise amplifier and down converter. In the received forward CDMA channel power, , at which the frame error of the receiver does not exceed
/datasheets/files/maxim/0003/jlq03.htm
Maxim 04/04/2001 78.66 Kb HTM jlq03.htm