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Part Manufacturer Description PDF & SAMPLES
POWEREST Texas Instruments Power Estimation Tool (PET)
CS35L32-CWZR Cirrus Logic Audio Amplifier
CS3002-ISZR Cirrus Logic Operational Amplifier, 2 Func, 10uV Offset-Max, PDSO8, 0.150 INCH, LEAD FREE, MS-012, SOIC-8
CS3002-ISZ Cirrus Logic Operational Amplifier, 2 Func, 10uV Offset-Max, PDSO8, 0.150 INCH, LEAD FREE, MS-012, SOIC-8

"15 GHz" power amplifier 41dBm

Catalog Datasheet MFG & Type PDF Document Tags
Abstract: Description The NPA1006 is a wideband GaN power amplifier optimized for 20-1000 MHz operation. This device has been designed for saturated and linear operation with output power levels to 15W (41.8 dBm) in an , ) Figure 6: Performance vs. Frequency (POUT = 41dBm) 90 Power Added Efficiency (%) 16 15 Gain , NPA1006 Gallium Nitride 28V, 15W, 20-1000 MHz Amplifier Built using the SIGANTIC® process - A , Small-signal Gain - 14.8 - dB PSAT Saturated Output Power - 42 - dBm SAT Nitronex
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500MH 150MH NDS-039
Abstract: High Power Amplifier Module 10 â'" 3000MHz, 22dB, 10 Watts AM003040SF-2H January 2011 REV 4 DESCRIPTION AM003040SF-2H is an ultra-broadband High Power Amplifier designed for instrumentation , design from 10 to 3000MHz â'¢ Instrumentation â'¢ High Gain and High Power, Psat = 41dBm , watts (40dBm) CW output power and 22dB small signal gain. The module has a built-in DC voltage regulator and a negative voltage generator. It can be biased from a 24V to 28V single supply. The amplifier AMCOM Communications
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3000MH 3500MH
Abstract: MAGX-011087 GaN Wideband Power Amplifier, 28 V, 15 W 20 - 1000 MHz Features ï'· ï'· ï'· ï , RFOUT / VD Input Match RFIN Description The MAGX-011087 is a wideband GaN power amplifier , ://www.macomtech.com/content/customersupport MAGX-011087 GaN Wideband Power Amplifier, 28 V, 15 W 20 - 1000 MHz , -011087 GaN Wideband Power Amplifier, 28 V, 15 W 20 - 1000 MHz Preliminary - Rev. V1P Absolute Maximum , ://www.macomtech.com/content/customersupport MAGX-011087 GaN Wideband Power Amplifier, 28 V, 15 W 20 - 1000 MHz M/A-COM
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MAAP-011068
Abstract: Gallium Nitride MMIC 12W 2.0 â'" 6.0 GHz Power Amplifier AM206541TM-SN May 2014 Rev 1 DESCRIPTION AMCOMâ'™s AM206541TM-SN-R is a broadband GaN MMIC power amplifier. It has 26dB gain, and 41 dBm output power over the 2.0 to 6.5GHz band. The AM206541TM-SN-R is in a ceramic package with a flange and straight RF and DC leads for drop-in assembly. Because of high DC power dissipation, good heat sinking is , '· Broadband from 2.0 to 6.5GHz ï'· Instrumentation ï'· Saturated output power Psat is 41dBm ï AMCOM Communications
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Abstract: 9001:2008 Certified Section 7 - Module Summary Tables 1) Universal Power Amplifier Modules ï'· ï , , MD 20879 AMCOM Communications, Inc. ISO 9001:2008 Certified 3) Connectorized Power Amplifier , categorized below: â'¢ Technology base: 1) GaN HEMT/SiC (for high output power); 2) GaAs PHEMT (for good , to 40W 2) MMIC power amplifiers (based on GaN/SiC HEMT, GaAs FET, GaAs PHEMT): wideband 10KHz-17GHz , shifters, attenuators, and bias tees 5) Custom design: MMIC power amplifiers, module power amplifiers, and AMCOM Communications
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DC-18GH
Abstract: RFHA5966A RFHA5966AX Band 10W High Power Amplifier GaAs MMIC X BAND 10W HIGH POWER AMPLIFIER GaAs MMIC Die Size: 4500m x 4000m VD1 VD2 Features      20dB Gain +41dBm Saturated Output Power 40% Power Added Efficiency 100% On Wafer DC and RF Testing 100% Output Power Testing RF Input RF Output VG1 VG2 Applications  ESCAN Radar , performance X-Band Gallium Arsenide Monolithic Amplifier. It has a 41dBm PSAT at 9.5GHz and is well suited RF Micro Devices
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MMIC X-band amplifier RFHA5966AS2 DS111023 1N4148
Abstract: RFHA5966AX Band 10W High Power Amplifier GaAs MMIC RFHA5966A X BAND 10W HIGH POWER AMPLIFIER GaAs MMIC Die Size: 4500m x 4000m VD1 VD2 Features 20dB Gain +41dBm Saturated Output Power 40% Power Added Efficiency 100% On Wafer DC and RF Testing 100% Output Power Testing ESCAN , stage, high efficiency, high performance X-Band Gallium Arsenide Monolithic Amplifier. It has a 41dBm , RFHA5966AS2 X Band 10W High Power Amplifier GaAs MMIC 2-Piece Sample Bag Optimum Technology Matching RF Micro Devices
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RF Power Amplifier 125KHz 1n4148 die 4500m GAAS FET AMPLIFIER x-band 10w 95GHZ 10Ghz RF Power 10w amplifier
Abstract: The TriQuint TGA4530 is a High Power Amplifier MMIC for 17 ­ 21GHz applications. The part is designed using using TriQuint's proven standard 0.25 um power pHEMT production process The TGA4530 nominally provides 29 dBm saturated output power at the 1 dB compression point and 41dBm OTOI for bias of , TGA4530-SM 17 - 21 GHz High Output TOI Packaged Amplifier Key Features · · · · · · · · Frequency Range: 17 - 21 GHz 41dBm Nominal Output TOI 21 dB Nominal Gain 29 dBm Nominal P1dB 12 dB TriQuint Semiconductor
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52E5 RO4003 TriQuint
Abstract: Sat-Com Product Description The TriQuint TGA4530 is a High Power Amplifier MMIC for 17 ­ 21GHz applications. The part is designed using using TriQuint's proven standard 0.25 um power pHEMT production , Advanced Product Information September 14, 2006 17-21 GHz High Output TOI Packaged Amplifier , TOI (dBm) Frequency Range: 17 - 21 GHz 41dBm Nominal Output TOI 21 dB Nominal Gain 29 dBm , 4.0 x 4.0 x 1.2 mm The TGA4530 nominally provides 29 dBm saturated output power at the 1 dB TriQuint Semiconductor
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41dBm
Abstract: (dB) Gain IRL ORL · Product Description The TriQuint TGA4530 is a High Power Amplifier MMIC for 17 ­ 21GHz applications. The part is designed using using TriQuint's proven standard 0.25 um power , power at the 1 dB compression point and 41dBm OTOI for bias of 6V, 825mA. The typical gain is 22dB. The , Advanced Product Information September 5, 2006 17-21 GHz High Output TOI Packaged Amplifier Key Features · · · · · · · · TGA4530-SM Frequency Range: 17 - 21 GHz 41dBm Nominal Output TOI TriQuint Semiconductor
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Abstract: Description The TriQuint TGA4530 is a High Power Amplifier MMIC for 17 â'" 21GHz applications. The part is designed using using TriQuintâ'™s proven standard 0.25 um power pHEMT production process 17 17.5 , TGA4530 nominally provides 29 dBm saturated output power at the 1 dB compression point and 41dBm OTOI , 17-21 GHz High Output TOI Packaged Amplifier TGA4530-SM Key Features â'¢ â'¢ â'¢ â'¢ â , ) Frequency Range: 17 - 21 GHz 41dBm Nominal Output TOI 21 dB Nominal Gain 29 dBm Nominal P1dB 12 dB TriQuint Semiconductor
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Abstract: Power Amplifier Module 300 â'" 2600MHz, 35dB, 20 Watts AM042644SF-3H April 2010 Rev 3 DESCRIPTION AM042644SF-3H is an ultra-broadband High Power Amplifier designed for instrumentation, communication and broadband power applications. It operates from 400MHz to 2600MHz and typically delivers more than 20 watts (43dBm) CW output power and 35dB small signal gain. The module has a built-in DC voltage regulator and a negative voltage generator. It can be biased from +24V to +32V single supply. The amplifier AMCOM Communications
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2600MH 400MH 2500MH
Abstract: reduce the number of devices per amplifier and reduce their power supply and heat sink size, a new GaAs , bandwidth only. Amplifier Configuration and Technology measured at a time. Zin and Zout (Zout|power , optimized for output power, Pout. The impedance parame- Amplifier Configuration Choice The FLL810 , power from the device. Complete Amplifier Check Input Matching Circuit Design Two sides of the , each amplifier. Figure 13 shows Pout and add performance versus Input Power, Pin, at 2.6 GHz Fujitsu
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FLL810IQ-3C Fujitsu GaAs FET application note atc100a Hp 2564 RFP 1026 resistor IMT-2000 fujitsu x band amplifiers
Abstract: CHA5296 27-30GHz High Power Amplifier GaAs Monolithic Microwave IC Description The CHA5296 is a high gain three-stage monolithic high power amplifier. It is designed for a wide range of , 36 27-30GHz High Power Amplifier CHA5296 Electrical Characteristics Tamb = +25°C, Vd = 6V Id , 27-30GHz High Power Amplifier CHA5296 Typical on Jig Measurements Bias conditions: Vd=6V, Vg tuned , Specifications subject to change without notice 27-30GHz High Power Amplifier CHA5296 42 38 34 30 26 United Monolithic Semiconductors
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27-30GH DSCHA52962147 CHA5296-99F/00
Abstract: AM07511542WM-00 AM07511542WM-SN-R GaAs MMIC Power Amplifier June 2014 Rev2 DESCRIPTION AMCOMâ'™s AM07511542WM is a broadband GaAs MMIC power amplifier. It has 25dB small signal gain, and 42dBm output power over the 8 to 11GHz band at 8V bias and a 5% pulsed operation. Because of high DC power dissipation, we strongly recommend to mount the bare die chip devices with eutectic bonding , output pulsed power ï'· High gain, 25dB ï'· Fixed microwave backhaul ï'· Input /Output AMCOM Communications
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Abstract: Advance Information: AI1013 QFN Packaged 13-15.5GHz High Power Amplifier D1 GND D2 , has developed a packaged 13-15.5GHz High Power Amplifier. This 4-stage amplifier exhibits up to 2W of , - Fax : +33 (0)1 69 33 03 09 AI1013 13-15.5GHz High Power Amplifier September 2011 , Power Amplifier September 2011 Typical Board Measurements Tamb.= +25°C, Vd = +7.0V, Idq = 1.1A , to change without notice AI1013 13-15.5GHz High Power Amplifier September 2011 Typical United Monolithic Semiconductors
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AN0017 MO-220 AI10131270 AN0019 AN0020 ES-CHA6252-QFG
Abstract: WJ-A34-1 / SMA34-1 1.5 to 2.3 GHz TO-8 CASCADABLE AMPLIFIER AVAILABLE IN SURFACE MOUNT HIGH , Flatness (Max.) Noise Figure (Max.) Power Output at 1 dB Compression (Min.) VSW R (Max.) Input/Output DC , . +41dBm (Typ.) Third Order Two Tone Intercept Point , .+10 dBm Maximum Short Term RF Input Power Output* Linear S-Parameters Frequency MHz 100.0 200.0 300.0 400.0 -
OCR Scan
WJ-CA34-1 WJ-A34 WJA34 WJA34-1 A34-1 GQQ70M0
Abstract: Base-Station Power Amplifier. · WLL Communication Systems. ABSOLUTE MAXIMUM RATINGS (Ambient Temperature Ta , POWER vs. FREQUENCY 52 51 49 47 45 43 41 31dBm VDS = 12V IDS = 5A Pin=42dBm 41dBm 39dBm Output , amplifier designs. 3 FLL1200IU-3 L-Band High Power GaAs FET Case Style "IU" 23.9±0.25 (0.941) 2.0 , FLL1200IU-3 L-Band High Power GaAs FET FEATURES · · · · · Push-Pull Configuration High Power , offers ease of matching, greater consistency and a broader bandwidth for high power L-band amplifiers Eudyna Devices
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2500 watt amplifier 12-R0
Abstract: MECX10W-2 X-Band GaAs pHEMT High Power Amplifier Main Features VG VD 0.25Âum GaAs pHEMT , 3.3 x 0.07 mm Product Description MECX10W-2 is a 0.25Âum GaAs pHEMT based High Power Amplifier , -2 X-Band GaAs pHEMT High Power Amplifier Main Characteristics Test Conditions: Tbase_plate = 20°C , Vd = , www.mec-mmic.com MECX10W-2 X-Band GaAs pHEMT High Power Amplifier Absolute Maximum Rating* Parameter , www.mec-mmic.com MECX10W-2 X-Band GaAs pHEMT High Power Amplifier Measured Performances Vs. Pin @ Frequency [9 Microwave Electronics for Communications
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Abstract: MECX10W-3 X-Band GaAs pHEMT High Power Amplifier Main Features VG VD 0.25Âum GaAs pHEMT , Description Chip Size: 5 x 3.3 x 0.07 mm MECX10W-3 is a 0.25Âum GaAs pHEMT based High Power Amplifier , thermo-compression bonding process. Measured Data MECX10W-3 X-Band GaAs pHEMT High Power Amplifier Main , Electronics for Communications www.mec-mmic.com MECX10W-3 X-Band GaAs pHEMT High Power Amplifier Small , www.mec-mmic.com MECX10W-3 X-Band GaAs pHEMT High Power Amplifier Measured Performances Vs. Pin @ Frequency [9 Microwave Electronics for Communications
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