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IXFH12N80P IXYS Corporation Power Field-Effect Transistor, 12A I(D), 800V, 0.85ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AD, PLASTIC, TO-247, 3 PIN
IXFQ12N80P IXYS Corporation Power Field-Effect Transistor, 12A I(D), 800V, 0.85ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, PLASTIC, TO-3P, 3 PIN
RG2012N-8061-B-T5 Susumu Co Ltd RES,SMT,THIN FILM,8.06K OHMS,100WV,.1% +/-TOL,-10,10PPM TC,0805 CASE
RG2012N-80R6-W-T1 Susumu Co Ltd Res,SMT,Metal Film,80.6 Ohms,100WV,.05% +/-Tol,-10,10ppm TC,0805 Case
RG2012N-8061-D-T5 Susumu Co Ltd RES,SMT,THIN FILM,8.06K OHMS,100WV,.5% +/-TOL,-10,10PPM TC,0805 CASE
RG2012N-8062-B-T5 Susumu Co Ltd RES,SMT,THIN FILM,80.6K OHMS,100WV,.1% +/-TOL,-10,10PPM TC,0805 CASE

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