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P51-100-A-M-P-4.5OVP-000-000 SSI Technologies Inc Controls Technologies Division SENSOR 100PSI M10-1.0 6G .5-4.5V
P51-100-A-M-P-5V-000-000 SSI Technologies Inc Controls Technologies Division SENSOR 100PSI M10-1.0 6G 1-5V
P51-100-A-M-P-4.5V-000-000 SSI Technologies Inc Controls Technologies Division SENSOR 100PSI M10-1.0 6G .5-4.5V
P51-100-A-M-P-20MA-000-000 SSI Technologies Inc Controls Technologies Division SENSOR 100PSI M10-1.0 6G 20MA
SRF4427G Microsemi Corporation Transistor
BYI-1T Microsemi Corporation Transistor

"100 amp" transistors

Catalog Datasheet MFG & Type PDF Document Tags
Abstract: 20 20 10 10 Pc (W) @Ta=25°C Pc(w) @Tc=25°C Pc (W) @mounted on an FR4 PCB, Transistors for Pwer Amp NPN LSTM Transistors for Pwer Amp PNP LSTM 2SC1627 Transistors for Pwer Amp NPN LSTM 2SA965 Transistors for Pwer Amp PNP LSTM 2SC2235 Transistors for Pwer Amp NPN MSTM 2SA1425 Transistors for Pwer Amp PNP MSTM 2SC3665 Transistors for Pwer Amp NPN TPL 2SA1932 Transistors for Pwer Amp PNP TPL 2SC5174 Transistors for Pwer Amp NPN TO-126(IS) Transistors for Pwer -
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2SA1943 2SC4793 2sa1837 2sC5200, 2SA1943 2sC5200, 2SA1943, 2sc5198 2SC4684 datasheets 2sc5200 2sa1930 transistor equivalent 2SC1627A 2SA817A 2SC3423 2SA1360 2SC3421 2SA1358
Abstract: RF/Microwave Devices RF Wideband Transistors RF Wideband Transistors for Pagers (see Fig. SOT323 , RF input circuit RF amp UBBSÎ3 RF Wideband Transistors RF Wideband Transistors for Cellular , Tel. (401) 762-3800 81 RF/Microwave Devices RF Wideband Transistors RF Wideband Transistors , circuit -
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BFR92A BFR520 BFR93AW BFQ67 BFR93A BFG541 BFG520 Philips RF PREAMP cordless phone circuit BFG591 blt81 BFR92AW BFS25A BFS505 BFS520 BFT25A
Abstract: Bipolar Power Transistors In Brief . . . Motorola's broad line of Bipolar Power Transistors includes discrete and Darlington transistors in a variety of packages from the popular surface mount DPAK , Bipolar Power Transistors in the industry and the Motorola commitment to quality and total customer satisfaction to go with them. Motorola Master Selection Guide Page Bipolar Power Transistors . . . . . . , 5.5­16 5.5­1 Bipolar Power Transistors Bipolar Power Transistors Selection by Package Package Motorola
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power transistors cross reference motorola AN485 transistor master replacement guide buv18a mj150* darlington electronic ballast with MJE13003 MJW16212 220AB 225AA 204AA 204AE BUL44F
Abstract: Transistors and MOSFETs Allied Represents the Full Line of NTE Products, Most Available for Next , MEASUREMENT Silicon Bipolar Transistors Stock No. 70214749 70215771 70214920 70214930 70214676 70214911 , Transistors Stock No. 70215715 70214643 70215725 70215737 70215977 70215738 70215952 70215983 70215741 , Mfr.'s Type NTE2013 NTE2014 NTE2018 No. of Transistors 7 7 8 Polarity Collector to Emitter Voltage VCE , Effect Transistors (JFET) Stock No. 70215783 70215785 70214771 70214696 Mfr.'s Type NTE133 NTE312 NTE326 Allied Electronics Catalog
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NTE382 NTE290A NTE159 NTE128 NTE123AP NTE2387 IC 741 amp 10 amp npn darlington power transistors NTE2395 NTE289A NTE385 NTE184 NTE196 NTE181 NTE175
Abstract: Fairchild Semiconductors Semiconductors Silicon Power Transistors NPN Power Transistors Metal Can (T05) REFERENCE TABLE See small signal general purpose amplifier and high voltage sections , NPN Power Transistors Metal Can (TO , 35380X 91 SE9052 325 50 10 20 100 1.0 5.0 5.0 20 35381H 91 NPN Power Transistors Metal Can (T03 , 721 Solidev Semiconductors Silicon Power Transistors Silicon NPN/PNP Power Transistorsâ'"10 Amp -
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BFX34 2N3440 SE9331 2N3054 2N6233 2N4915 10 amp npn power transistors 2N3715 FAIRCHILD 2n3714 fairchild 2n3055 tos 35373H 35374F 35375D
Abstract: Transistors nmm â  7656^ D007733 5Ã"4 â  RHM [6 pin type including independent 2 circuits) Two transistors are contained in 2125 and 2916 type packages. The two circuits are independent of each other. Lower element mounting areas can be made use of separately on external circuits , 1 49 E3 Transistors (Surface Mounted Types) â  7626^=] â¡â¡â¡7734 MIO â RHU (6â'"Pin Type with , . 50 Transistors nnNm I TfiSflW D0D773S 3S7 â RHM â'¢Packing Package Packaging -
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marking code vl marking code wt5 marking t109 wT5 marking WT5 marking code 2SA1037KX2 2SA1037K 2SA1514KX2 2SC2412KX2 2SC3906KX2 2SC3837KX2
Abstract: Super-gain bipolar transistors with on-wafer trimming are used providing low offset voltage and drift The , 05 mV pA pA mV C fA C pA C junction FETs At first glance field effect transistors seem to , Technical Paper 15 December 1980 Reducing DC Errors in Op Amps MOS FETs Field effect transistors , nanoampere current source With bipolar transistors there is a tradeoff between current gain and breakdown voltage Super-gain transistors are devices that have been diffused for maximum current gain at the National Semiconductor
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LM108 LM108A LM11 LM11 national LM11 op amp transistor 8722 Widlar FETs Field Effect Transistors TP-15
Abstract: Transistors ROHM CO LTD SbE D â  TflSÃ"'m 000b,ì7tì SS3 «RHII [6 pin type including independent 2 circuits] Two transistors are contained in 2125 and 2916 type packages. \ _ 1.1 "2.1 The two circuits are independent of each other. Lower element mounting areas can be made , 2SA1037K -25 -100 390~ -6 -1 2SD2226K 50 100 820~2700 5 1 81 Q Transistors (Surface Mounted Tv ROHM , Transistors M ROHM CO LTD â'¢Packing SbE D 7020^ DODbTfil 101 IRHH Package Packaging -
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Marking Code ss3 TWO 2SA1037K marking code va transistors pre amp Transistors mark UMx1 2SC3838KX2 2SC2059K 2SC2412K
Abstract: Fairchild Semiconductors Semiconductors Silicon Power Transistors NPN Power Transistors , NPN Power Transistors Metal Can (TO , 35380X 91 SE9052 325 50 10 20 100 1.0 5.0 5.0 20 35381H 91 NPN Power Transistors Metal Can (T03 , 721 SGS-ATES Semiconductors Transistors - NPN NPN Medium Power Transistors REFERENCE TABLE Max , 66 2N3108 â'" 60 â'" 40-120 150 60 19162H 66 *At Tcaseâ'"25*C NPN High Voltage Transistors -
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SE9051 2N4914 BFR97 BFR98 150 amp transistors fairchild semiconductors SGS-ATES 2n3055 sgs general purpose 2n3055 transistors 35376B 35377X 35378R 2N6235 35379G
Abstract: Fairchild Semiconductors Semiconductors Silicon Power Transistors PNP Power Transistors Metal Can (T03) REFERENCE TABLE (In ascending collector current order) MAX RATINGS CHARACTERISTICS @ 25' , 2N3716 3538SB 94 353S9C 94 3539QF 94 NPN Plastic Power Transistors T0220 Plastic REFERENCE TABLE (In , 7.0 50 20 100 2.5 2.0 7.0 2.5 2N6134 35399X 88 PNP Plastic Power Transistors T0220 Plastic -
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2N4905 2N4906 2N3792 BD221 BD224 2N6121 BD223 BD222 BD225 2N6133 35391D
Abstract: Fairchild Semiconductors Semiconductors Silicon Power Transistors NPN Power Transistors Metal Can (T05) REFERENCE TABLE See small signal general purpose amplifier and high voltage sections MAX ra|ings CHARACTERISTICS @25'C i V CE(sat) VCEO PfoT le h FE @ fr Outline Volts , NPN Power Transistors Metal Can (TO , 35380X 91 SE9052 325 50 10 20 100 1.0 5.0 5.0 20 35381H 91 NPN Power Transistors Metal Can (T03 -
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2N3792 fairchild 2n3055 35382D 35383D 35384B 2N3055 35385X 35386R
Abstract: SEMICONDUCTOR COMPLEMENT MANUAL TABLE OF CONTENTS Transistors â'" Home Equipment Page S Transistors â'" Auto Radios Page 28 Semiconductor Diodes â'" Home Equipment , . TRANSISTORS â'" HOME EQUIPMENT Trade Name Admiral â'˜ Replacement Model No. Manufacturer Type , (2) RF Amp. Oscillator Mixer 1st IF Amp. 2nd IF Amp. Driver P.P. Output TRANSISTORS , . Channel 1 Pre Amp. Channel 2 Pre Amp. Channel 2 Pre Amp. 4 TRANSISTORS HOME EQUIPMENT -
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2n468 2T203 Bendix Transistors diodes 1N34A color sp215 WESTINGHOUSE ELECTRIC oscillator 2N252 2N309 2N140 521-6T2 528-6T2 2N139
Abstract: , comparators, resistors, capacitors, transmission gates, and transistors with area P Well isolation rings. The , , band-gap voltage reference and mirrored transistors. For details on cell implementation or standard options , Equivalents Mirror Transistors 64 I/O Pads Available Standard Evaluation Masked Chips Available Chip , Dimensions (All Dimensions in Microns) AREA Refi» to Diagram ANALOG COMPONENTS N-FET Array Transistors N-FET Array Transistors N-FET Array Transistors N-FET Array Transistors N-FET Array Transistors N-FET -
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NFET DIE CHIP OP02 poly silicon resistor HI-5300 200-35P
Abstract: THOMSON/ DISTRIBUTOR SflE D â  TaSbfl73 0004035 Ofl? â  TCSK BIPOLAR TRANSISTORS com. Maximum Ratings Device Polarity & Material Device Power Dissipata Collector Current Continuous , Preamp Input Circuits 0.625 0.5 60 Min Vces = 60 10 'SK9443 40 TRANSISTORS THOHSON/ DISTRIBUTOR SflE D ^0^073 0D04fl3b T13 â  TCSK â'ž BIPOLAR TRANSISTORS com. Bj Operating Characteristics , T-021 SK9442 TRANSISTORS 41 -
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SK9412 SK9413 SK9415 SK9417 SK9421 SK9422 t056 SK9431 sk9436 SK9440 SK9418
Abstract: 102bfl73 0004Ã33 P04 â  TCSK BIPOLAR TRANSISTORS com. Maximum Ratings Device Polarity & Material Device Power Dissipato. Collector Current Continuous Breakdown Voltages TCE Type Application Base Current Collector-to-Base Collector-to-Emitter Emitter-to-Base ('complementary device type , TRANSISTORS THOMSON/ DISTRIBUTOR SflE D â  GQQ4fl34 140 â  TCSK BIPOLAR TRANSISTORS cour. Operating , .T-017 SK9407 TRANSISTORS 39 -
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SK9295 SK9351 SK3232 SK9352 SK9362A SK9363 SK9411 sk9391 SK9390 SK9370 SK9366
Abstract: THOHSON/ DISTRIBUTOR 5flE D â  TD3bfl73 D0D4fl27 TDD â  TCSK ESQ BIPOLAR TRANSISTORS coni. Maximum Ratings Device Polarity S Material Device Power Dissipalo. Collector Current Continuous , High-Speed Switching 175 20 10 500 6 32 TRANSISTORS THOriSON/ DISTRIBUTOR 5Ã"E D â  TD2bô73 0Q04ÃPfl ^47 â  TCSK BIPOLAR TRANSISTORS cont. Operating Characteristics Switching Characteristics lit , -043 SK9034 T-005 SK9038 T-043 SK9039 TRANSISTORS 33 -
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SK3949 SK3948 SK3958 SK3959 SK3960 SK3961 T-047 SK4909 SK9032 SK3996 T047
Abstract: 2. List of Principal Characteristics of Transistors 2. List of Principal Characteristics of Transistors 2.1 Small Super Mini Type (SSM) < T ra n s is to r for G eneral Purpose, Low Frequency E q u ip , KP High Speed SW High Speed SW 25 2. List of Principal Characteristics of Transistors , Characteristics of Transistors R-DS ION ) Type No. (V) (mA) Pd (W) (V) 2SK 1827 2SK 1829 2SK , Transistors 2.3 Super Mini Type {S-MINI) C T ran sisto r for G eneral Purpose, Low Frequency E q u ip m -
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TRANSISTOR MARKING YB 1L 2SK 2SA 2SC equivalent transistor 2sc 1586 transistor 2sk power amp transistor bc 2sk i203 transistor 2SC4841 L0000
Abstract: Fairchild Semiconductors Semiconductors Silicon Power Transistors NPN Power Transistors Metal Can (T05) REFERENCE TABLE See small signal general purpose amplifier and high voltage sections , NPN Power Transistors Metal Can (TO , 35380X 91 SE9052 325 50 10 20 100 1.0 5.0 5.0 20 35381H 91 NPN Power Transistors Metal Can (T03 , 721 Solidev Semiconductors Silicon Power Transistors Silicon NPN/PNP Power Transistorsâ'"Up to 7 -
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Solidev 2N30S3 35059F 2N4911 35091F 2N4912 35092D
Abstract: NXP high voltage power bipolar transistors BUJ & PHx series High voltage power bipolar transistors for lighting Our high voltage power bipolar transistors are part of our industry-leading , series of high voltage power bipolar transistors use planar technology that delivers industry-leading , achieved by choosing the optimum base drive for the high voltage transistors. Figure 2 shows power loss , best-in-class efficiency and low-power discrete solutions. In addition to the high voltage transistors, we NXP Semiconductors
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BUJ303B BUJ403A cfl low loss drive phe13009 transistor BUJ100 BUJ100 PHE13007 DIMMER BUJD103AD PHE13003C
Abstract: output voltage or current with remote sensing. It provides drive for external transistors to boost , °C, and 2N2222, 2N2907 external transistors, unless otherwise noted. ALD1000U PARAMETER CONDITIONS , Transistors 5mA Load 10 XTR OUTPUT Positive Overvoltage Sense Negative Overvoltage Sense Positive Overcurrent Sense Negative Overcurrent Sense Internal Drive Transistors TYP MAX UNITS ­10 50 , Linear Range Max 0.1% of FS Output Current Min Internal Drive Transistors Output Current Max Burr-Brown
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ALD1000 TRANSISTOR 2n2222 p1 IC 520 instrumentation amplifier 2N2222 curve small signal instrumentation amplifier 2N2222 npn small signal current gain 2N2907 NPN Transistor
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